梯度掺杂与均匀掺杂GaN光电阴极的对比研究

为了提高负电子亲和势(NEA)GaN光电阴极的量子效率,利用金属有机化合物化学气相淀积(MOCVD)外延生长了梯度掺杂反射式GaN光电阴极,其掺杂浓度由体内到表面依次为1×10¹⁸ cm^-3,4×10¹⁷ cm^-3,2×10¹⁷ cm^-3和6×10¹⁶ cm^-3,每个掺杂浓度区域的厚度约为45 nm,总的厚度为180 nm.在超高真 关键词： NEA GaN光电阴极 梯度掺杂 量子效率 能带结构     

均匀掺杂GaAs材料光电子的输运性能研究

通过建立原子结构的理论模型和电离杂质散射理论公式,研究了光电子在透射式均匀掺杂GaAs光电阴极体内的输运过程,分析了光电阴极的掺杂浓度、发射层厚度、电子扩散长度等相关因素对阴极出射面的弥散圆斑以及到达阴极出射面的光电子数与激发光电子总数之比的影响.计算结果表明,当透射式均匀掺杂GaAs光电阴极发射层厚度为2 μm、电子扩散长度为3.6 μm、掺杂浓度为1×10¹⁹ cm^-3时,其极限线分辨率为769 mm^-1.此GaAs材料光电子的输运性能 关键词： GaAs 光电阴极 光电子输运 弥散圆斑 分辨率     

a-Si:H/a-SiNx:H超晶格的掺杂效应

采用带有可转动掩板的沉积系统,合成出一类新的a-Si:H/掺杂a-SiN_x:H超晶格。样品中各子层厚度及a-SiN_x:H子层中N/Si比固定,仅改变掺杂浓度。结果发现:此类超晶格中的费密能级可以通过a-SiN_x:H层中的掺杂来控制,即a-Si:H/a-SiN_x:H超晶格可以从n型转变为p型,依赖于a-SiN_x:H子层中B的掺杂比。然而,a-SiN_x:H子层中P的掺杂对a-Si:H/a-SiN_x:H超晶格传输特性影响并不大。 关键词：     

核壳纳米结构壳中Yb离子对稀土上转换发光温度特性的影响

采用油酸盐法分别制备出均匀的上转换发光裸核纳米粒子及其包覆具有不同Yb³⁺浓度掺杂的NaYF₄:Yb³⁺,Er³⁺核壳纳米结构的上转换纳米粒子。在不同温度下(90~450 K),研究分析了在壳中掺杂不同浓度Yb³⁺的NaYF₄:Yb³⁺,Er³⁺@NaYF₄:x%Yb³⁺核壳纳米体系的上转换发光特性。结果表明:在NaYF₄:Yb³⁺,Er³⁺上转换体系中,惰性壳中的525 nm(²H_11/2 →⁴I_15/2)发射峰呈现出与活性壳中不一样的趋势。壳层中掺杂的Yb³⁺通过声子对纳米粒子内部发光与表面及外界之间的相互作用起到了重要的"桥"连作用。     

ZBLAN玻璃中Pr3+掺杂离子3P0和1D2能级的发光特性和寿命

对ZBLAN氟锆酸盐玻璃中Pr³⁺掺杂离子³P₀和¹D₂能级的寿命和发光特性进行了较详细的光谱学研究。首先测量了两种掺杂浓度(质量分数分别为1×10^-3,5×10^-3)的Pr³⁺:ZBLAN玻璃的吸收光谱,然后运用时间分辨激光光谱技术测量了³P₀和¹D₂能级在激光单光子共振激发下的荧光发射谱和能级寿命。将不同荧光发射谱带的强度和文献报道的Judd Ofelt理论计算辐射跃迁几率数值做了比较分析,证明了文献中理论计算结果的可靠性。由于浓度猝灭效应,在相同的激发条件下,掺杂浓度为1×10^-3样品的荧光发射强度明显大于5×10^-3样品的荧光发射强度。但是从我们的测量结果看,掺杂浓度对³P₀和¹D₂ 的能级寿命值无显著影响。掺杂浓度为1×10^-3时,Pr³⁺离子³P₀和¹D₂能级的寿命值分别为46,322μ_s。     

Spectroscopic parameters and molecular constants of HI(X~1Σ~+),DI(X~1Σ~+) and TI(X~1Σ~+) isotope molecules

The potential energy curve (PEC) of HI(X¹Σ⁺) molecule is studied using the complete active space self-consistent field method followed by the highly accurate valence internally contracted multireference configuration interaction approach at the correlation-consistent basis sets, aug-cc-pV6Z for H and aug-cc-pV5Z-pp for I atom. Using the PEC of HI(X¹Σ⁺), the spectroscopic parameters of three isotopes, HI(X¹Σ⁺), DI(X¹Σ⁺) and TI(X¹Σ⁺), are determined in the present work. For the HI(X¹Σ⁺), the values of D₀, D_e, R_e, ω_e, ω_eχ_e, α_e and B_e are 3.1551 eV, 3.2958 eV, 0.16183 nm, 2290.60 cm^-1, 40.0703 cm^-1, 0.1699 cm^-1 and 6.4373 cm^-1, respectively; for the DI (X¹Σ⁺), the values of D₀, D_e, R_e, ω_e, ω_eχ_e, α_e and B_e are 3.1965 eV, 3.2967 eV, 0.16183 nm, 1626.8 cm^-1, 20.8581 cm^-1, 0.0611 cm^-1 and 3.2468 cm^-1, respectively; for the TI (X¹Σ⁺), the values of D₀, D_e, R_e, ω_e, ω_eχ_e, α_e and B_e are of 3.2144 eV, 3.2967 eV, 0.16183 nm, 1334.43 cm^-1, 14.0765 cm^-1, 0.0338 cm^-1 and 2.1850 cm^-1, respectively. These results accord well with the available experimental results. With the PEC of HI(X¹Σ⁺) molecule obtained at present, a total of 19 vibrational states are predicted for the HI, 26 for the DI, and 32 for the TI, when the rotational quantum number J is equal to zero (J = 0). For each vibrational state, vibrational level G(?), inertial rotation constant B_? and centrifugal distortion constant D_? are determined when J = 0 for the first time, which are in excellent agreement with the experimental results.     

试验优化设计Er3+/Yb3+共掺BaGd2ZnO5荧光粉及其上转换发光性质

为得到绿光和红光最大发光强度的Er³⁺/Yb³⁺共掺BaGd₂ZnO₅上转换材料荧光粉, 首先采用试验优化设计中的均匀设计初步寻找Er³⁺/Yb³⁺合理的掺杂浓度; 其次通过二次通用旋转组合设计进一步优化实验, 建立起Er³⁺/Yb³⁺掺杂浓度与绿光和红光发光强度的回归方程; 最后通过遗传算法计算出方程的最优解, 即绿光和红光最大发光强度时对应的Er³⁺/Yb³⁺掺杂浓度. 利用传统的高温固相法分别制备出最优样品. 采用X 射线衍射对得到荧光粉的晶体结构进行了分析, 证明了所有产物均为纯相BaGd₂ZnO₅. 采用980 nm抽运激光作为激发源, 在同样的条件下测量了样品的上转换荧光发射光谱, 从中可见样品有较强的红光发射和绿光发射, 发光中心位于662, 551和527 nm, 分别对应于⁴F_9/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2 及²H_11/2→⁴I_15/2能级跃迁. 研究了绿光和红光最优样品的上转换发光强度与激光器工作电流之间的关系, 通过分析发现红色和绿色上转换发光均为双光子过程. 由归一化的绿色上转换发射光谱可以看出, 激光器工作电流导致的样品温度变化可以忽略不计. 由于能级²H_11/2和⁴S_3/2之间存在热平衡, 并满足玻尔兹曼分布, 由此探讨了绿光最优样品上转换发射光谱中的绿色发射与温度的关系, 计算出²H_11/2和⁴S_3/2之间的能级差为ΔE=926.11 cm^-1. 研究了绿光最优样品的温度效应, 随着温度的升高, 发射强度逐渐变小, 出现了温度猝灭现象. 并计算了样品的激活能, 分别为总体激活能ΔE_总=0.45 eV, 绿光激活能ΔE_绿=0.45 eV, 红光激活能ΔE_红=0.46 eV.     

稀土掺杂的NaGdF4上转换发光材料的合成与发光特性研究

采用水热法制备了一系列不同掺杂浓度的NaGdF₄:Re(Re=Tm³⁺,Er³⁺,Yb³⁺)上转换发光粉。通过X射线衍射(XRD)、电子扫描电镜(SEM)和上转换发射光谱对样品进行了表征。XRD研究结果表明:合成的样品均为六方结构NaGdF₄。估算的平均晶粒尺寸为41~43 nm。在980 nm红外光激发下,Er³⁺和Yb³⁺共掺杂的NaGdF₄发光粉发出分别来自于Er³⁺离子²H_{11/ 2},⁴S_3/2→⁴I_15/2跃迁的绿光和⁴F_9/2→⁴I_15/2跃迁的红光发射,Tm³⁺和Yb³⁺共掺杂的NaGdF₄发光粉发出分别来自Tm³⁺离子的¹G₄→³H₆跃迁的蓝光、¹G₄→³F₄和³F_2,3→³H₆跃迁的红光和³H₄→³H₆跃迁的近红外光发射。Er³⁺,Tm³⁺和Yb³⁺共掺杂的NaGdF₄发光粉的发光强度及红、绿、蓝光发射的相对强度受Yb³⁺离子掺杂浓度的影响。对样品中可能的上转换发光机制进行了讨论。计算的色坐标显示:可通过改变掺杂离子浓度对上转换发光的颜色进行调控。     

约化场强对氮-氧混合气放电等离子体演化特性的影响

采用零维等离子体动力学模型,计算了不同约化场强条件下N₂/O₂放电等离子体的演化特性.结果表明,平均电子能量与约化场强有着近似的线性关系,在约化场强为100 Td时,平均电子能量约为2.6 eV、最大电子能量达35 eV;约化场强是影响电子能量函数分布的主要因素.气体放电过程结束后,振动激发态氮分子的粒子数浓度不再变化,电子激发态的氮分子、原子和氧原子的粒子数浓度达到一峰值后开始降低;放电结束后的氧原子通过复合反应生成臭氧.约化场强升高,由于低能电子减少的影响,振动激发态氮分子的粒子数浓度降低,当约化场强由50 Td增加75 Td,100 Td时,粒子数浓度由3.83×10¹¹ cm^-3降至1.98×10¹¹ cm^-3和1.77×10¹¹ cm^-3,其他粒子浓度则相应增大. 关键词： 等离子体 约化场强 粒子演化 数值模拟     

Pr3+,Yb3+共掺YPO4下转换材料的制备及其转光效率

采用固相反应法制备了Pr³⁺,Yb³⁺共掺杂的YPO₄下转换发光粉体,并在450 nm光激发条件下,研究了Yb³⁺不同摩尔分数(0%,1%,2%,4%,20%,30%)对转光效率的影响。结果表明:不同Yb³⁺浓度的样品,其荧光峰强度不同,这可能是由于Pr³⁺-Yb³⁺之间Yb³⁺浓度不同存在能量传递效率差异的原因。研究也发现了样品的下转换发光,其能量传递过程为:Pr³⁺:³P₀→Yb³⁺:²F_5/2+²F_5/2。荧光光谱测试结果表明,Yb³⁺的最佳掺杂摩尔分数为2%。Pr³⁺,Yb³⁺共掺杂的YPO₄材料在提高太阳能电池光电转换效率方面具有潜在的应用。     

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

In this study,we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene)(P3HT) and a methanofuUerene derivative(PCBM).Organic semiconductors are also known to be not pure and they have defects and impurities,some of them are being charged and act as p-type or n-type dopants.Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings(N_d) that consist of 5 × 10~(17) cm~(-3),10~(18) cm~(-3),and 5 × 10~(18) cm~(-3).We perform the analysis of the doping concentration through the drift-diffusion model,and calculate the current and voltage doping dependency.We find that at three different n-dopant levels,optimum p-type doping is about N_p = 6 × 10~(18) cm~(-3).Simulation results have shown that by increasing doping level,V_(oc) monotonically increases by doping.Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p = 3 × 10~(18) cm~(-3).Moreover,this paper demonstrates that the optimum value for the p-doping is about N_p = 6 × 10~(18) cm~(-3) and optimum value for n-dopant is N_d = 10~(18) cm~(-3),respectively.The simulated results confirm that doping considerably affects the performance of organic solar cells.     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

YAG粉末材料中Cr3+敏化的Yb3+近红外发光性质

采用高温固相反应法合成了YAG: 0.02Cr³⁺,yYb³⁺系列粉末材料,研究了该系列材料在近红外区域的发光特性,主要包括Cr³⁺,Yb³⁺的发光性质、Cr³⁺: ⁴T₂和Yb³⁺: ²F_5/2能级辐射跃迁寿命以及其布居时间的比较,给出了Yb³⁺最佳掺杂量为10%。实验表明:通过Cr³⁺→Yb³⁺能量传递,实现了Yb³⁺在1 000 nm附近近红外发光的增强,这对进一步提高c-Si太阳能电池转换效率打下了坚实基础。     

硅异质结太阳电池的物理机制和优化设计

硅异质结太阳电池是一种由非晶硅薄膜层沉积于晶硅吸收层构成的高效低成本的光伏器件,是一种具有大面积规模化生产潜力的光伏产品.异质结界面钝化品质、发射极的掺杂浓度和厚度以及透明导电层的功函数是影响硅异质结太阳电池性能的主要因素.针对这些影响因素已经有大量的研究工作在全世界范围内展开,并且有诸多研究小组提出了器件效率限制因素背后的物理机制.洞悉物理机制可为今后优化设计高性能的器件提供准则.因此及时总结硅异质结太阳电池的物理机制和优化设计非常必要.本文主要讨论了晶硅表面钝化、发射极掺杂层和透明导电层之间的功函数失配以及由此形成的肖特基势垒;讨论了屏蔽由功函数失配引起的能带弯曲所需的特征长度,即屏蔽长度;介绍了硅异质结太阳电池优化设计的数值模拟和实践;总结了硅异质结太阳电池的研究现状和发展前景.     

胆甾液晶掺杂活性层对有机太阳能电池性能的影响

以poly(3-hexylthiophene)(P3HT)为电子给体,indene-C60bisadduct(ICBA)为电子受体,通过掺杂不同浓度胆甾液晶氯化胆甾醇制备了有机体异质结太阳能电池.结果表明,适当浓度掺杂使器件的开路电压提高到了0.78 V,但短路电流密度却有所降低,填充因子几乎不变,能量转换效率提高了10%.利用X射线、光致发光、原子力显微镜及紫外-可见吸收光谱进行表征,发现液晶掺杂对活性层的结晶度、分子内部排列情况、薄膜表面形貌和光吸收特性等都有明显影响.     

超薄高速率单结微晶硅薄膜电池及其叠层电池

采用甚高频等离子体增强化学气相沉积技术, 基于优化表面形貌及光电特性的溅射后腐蚀ZnO:Al衬底, 将通过调控工艺参数获得的器件质量级高速微晶硅(μupc-Si:H )材料(沉积速率达10.57 Å/s)应用到微晶硅单结电池中, 获得了初始效率达7.49%的高速率超薄微晶硅单结太阳电池(本征层厚度为1.1 μm). 并提出插入n型微晶硅和p型微晶硅的隧穿复合结, 实现了非晶硅顶电池和微晶硅底电池之间的低损电连接, 由此获得了初始效率高达12.03% (V_oc=1.48 eV, J_sc=11.67 mA/cm², FF=69.59%)的非晶硅/微晶硅超薄双结叠层电池(总厚度为1.48 μm), 为实现低成本生产太阳电池奠定了基础.     

A cold thermionically emitting dusty air plasma formed by radiativeheating of graphite particulates

Formation of an atmospheric pressure dusty air plasma is explored experimentally in this paper. The plasma is created by seeding an air flow with graphite particles and irradiating the particulates with a focused CO₂ laser beam. The graphite particles are, thus, heated to thermionically emitting temperatures, and average particle temperatures and average particle number densities are measured. The presence of charges is inferred both from these measured quantities using a simple theoretical transient model, and experimentally by applying a dc bias across the irradiated region. It is found that an electron density of ~6.7 × 10⁵ cm^-3 (6.7 × 10¹¹ m^-3) can be produced at steady state in the presence of O₂. This value can be increased to 3.6 × 10⁷ cm^-3 (3.6 × 10¹³ m ^-1) in the ideal case where an electron attachment to O₂ is suppressed and where a lower work function particulate is used     

基于旋涂法和电子束蒸发法制备的V2O5/Ag/V2O5叠层透明导电薄膜

利用溶胶-凝胶技术与电子束蒸镀相结合的方法在常温下制备了叠层V₂O₅/Ag/V₂O₅（VAV）透明导电薄膜,研究了各层薄膜厚度对叠层结构光电特性的影响。用原子力显微镜、紫外-可见光分光光度计、四探针电阻仪及开尔文探针对样品的表面形貌、光电性能及功函数等性质进行了表征。实验结果表明,该薄膜具有良好的光学和电学性质,可见光（380~780 nm）平均透过率达75%,迁移率为16.89 cm²/（V·s）,载流子浓度为－1.043×10²² cm^-3,方块电阻值为15.1 Ω/□,功函数为5.17 eV。该制备方法降低了V₂O₅薄膜的工艺制备难度,为该材料在太阳能电池中的应用创造了良好的前期基础。     

Device simulation of lead-free CH_3NH_3SnI_3 perovskite solar cells with high efficiency

The lead-free perovskite solar cells(PSCs) have drawn a great deal of research interest due to the Pb toxicity of the lead halide perovskite.CH_3NH_3SnI_3 is a viable alternative to CH_3NH_3PbX_3,because it has a narrower band gap of 1.3 eV and a wider visible absorption spectrum than the lead halide perovskite.The progress of fabricating tin iodide PSCs with good stability has stimulated the studies of these CH_3NH_3SnI_3 based cells greatly.In the paper,we study the influences of various parameters on the solar cell performance through theoretical analysis and device simulation.It is found in the simulation that the solar cell performance can be improved to some extent by adjusting the doping concentration of the perovskite absorption layer and the electron affinity of the buffer and HTM,while the reduction of the defect density of the perovskite absorption layer significantly improves the cell performance.By further optimizing the parameters of the doping concentration(1.3 × 10~(16) cm~3) and the defect density(1 × 10~(15) cm~3) of perovskite absorption layer,and the electron affinity of buffer(4.0 eV) and HTM(2.6 eV),we finally obtain some encouraging results of the J_(sc) of 31.59 mA/cm~2,V_(oc) of 0.92 V,FF of 79.99%,and PCE of 23.36%.The results show that the lead-free CH_3NH_3SnI_3 PSC is a potential environmentally friendly solar cell with high efficiency.Improving the Sn~(2+) stability and reducing the defect density of CH_3NH_3SnI_3 are key issues for the future research,which can be solved by improving the fabrication and encapsulation process of the cell.     

Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications

A GaN-based high electron mobility transistor (HEMT) with p-GaN islands buried layer (PIBL) for terahertz applications is proposed. The introduction of a p-GaN island redistributes the electric field in the gate-drain channel region, thereby promoting the formation of electronic domains in the two-dimensional electron gas (2DEG) channel. The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software. Simulation results show that the 0.2 μ m gate HEMT with a PIBL structure having a p-GaN island doping concentration (N_p) of 2.5×10¹⁸ cm^-3-3×10¹⁸ cm^-3 can generate stable oscillations up to 344 GHz-400 GHz under the gate-source voltage (V_gs) of 0.6 V. As the distance (D_p) between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm, the fundamental frequency decreases from 377 GHz to 344 GHz, as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_f1/I_avg ranging from 2.4% to 3.84%.