第一性原理研究Mg2 Si同质异相体的结构、电子结构和弹性性质

在第一性原理框架下,采用赝势平面波方法研究了三种Mg₂Si同质异相体的晶胞结构、电子结构和弹性性质随压强的变化关系.研究发现,反萤石结构Mg₂Si、反氯铅矿结构Mg₂Si和Ni₂In型Mg₂Si分别在压强为0-7 GPa,7.5-20.2 GPa和21.9-40 GPa范围内能够保持结构稳定.计算获得了不同压强下Mg₂Si的弹性常数、体模量、剪切模量、杨氏模量、泊松比和各向异 关键词： 态密度 电子结构 弹性常数 第一性原理     

Pressure-induced phase transition in silicon nitride material

The equilibrium crystal structures,lattice parameters,elastic constants,and elastic moduli of the polymorphs α-,β-,and γ-Si3N4,have been calculated by first-principles method.β-Si3N4 is ductile in nature and has an ionic bonding.γSi3N4 is found to be a brittle material and has covalent chemical bonds,especially at high pressures.The phase boundary of the β→γ transition is obtained and a positive slope is found.This indicates that at higher temperatures it requires higher pressures to synthesize γ-Si3N4.On the other hand,the α→γ phase boundary can be described as P = 14.37198+ 3.27 × 10?3T-7.83911 × 10?7T2-3.13552 × 10?10T3.The phase transition from α-to γ-Si3N4 occurs at 16.1 GPa and 1700 K.Then,the dependencies of bulk modulus,heat capacity,and thermal expansion on the pressure P are obtained in the ranges of 0 GPa-30 GPa and 0 K-2000 K.Significant features in these properties are observed at high temperatures.It turns out that the thermal expansion of γ-Si3N4 is larger than that of α-Si3N4 over wide pressure and temperature ranges.The evolutions of the heat capacity with temperature for the Si3N4 polymorphs are close to each other,which are important for possible applications of Si3N4.     

Thermal conductivity of nitrogen in the temperature range 350–2500 K

The thermal conductivity of nitrogen is determined in a conductivity column instrument in the temperature range of 338 to 2518 K with an estimated uncertainty of about ± 1·5 per cent. The experimental data points are correlated by a cubic polynomial in temperature, viz. k(T)/(mW m^-1 K^-1) = 12·18 + 0·05224(T/K) - 0·6482 × 10^-6(T/K)² - 0·2765 × 10^-9(T/K)³. These conductivity values determined from heat transfer data taken in the continuum regime are found to be in fair agreement with the values obtained from similar data referring to low pressure range.

The present results are compared with the conductivity determinations of other workers and with the predictions of various theories developed for polyatomic gases. It is pointed out that a reliable calculation of thermal conductivity over an extended temperature range is impossible at the present time due to the absence of a large variety of experimental molecular data needed for such an effort. Average values of the vibrational energy diffusion coefficient, D _vib, are computed from the present k(T) data.     

Periodic DFT calculation of the pressure-induced phase transition and thermodynamical properties of magnesium silicide polymorphs

The plane-wave pseudo-potential method within the framework of first-principles is used to investigate the structural and elastic properties of Mg₂Si in its low pressure phase (Fm-3m) and intermediate pressure phase (Pnma). The high-pressure lattice constants, the elastic constants, the elastic moduli and the anisotropy factors of the anti-cotunnite Mg₂Si are presented and discussed. The results show that our system is mechanically stable. The reversible phase transition from anti-fluorite to anti-cotunnite structure is successfully reproduced through the quasi-harmonic Debye model. The phase boundary can be described as P=4.06826−6.95×10⁻³T+5.08838×10⁻⁵T²−4.24073×10⁻⁸T³. To complete the fundamental characteristics of these compounds we have analysed the thermodynamic properties such as thermal expansion, bulk modulus, isochoric heat capacity and Debye temperature in a pressure range 0-21 GPa and a temperature range 0-1200 K. The obtained results tend to support the experimental data when available. Therefore, the present results indicate that the combination of first-principles and quasi-harmonic approximations is an efficient scheme to simulate the high-temperature behaviours of semiconductors like Mg₂Si.     

α-, β-和γ-Si3N4 高压下的电子结构和相变: 第一性原理研究

本文采用第一性原理框架下的赝势平面波方法结合振动类德拜模型研究了α,β和γ-Si₃N₄在高温下的点阵常数,弹性常数和弹性模量.研究发现三种同质异相体的体模量都很高.β-Si₃N₄在低温下表现出脆性,在高温下则表现出延展性.γ-Si₃N₄在低温和高温下都是脆性的共价化合物.β → γ 相变的相界斜率为正值,说明在较高温度时合成γ-Si₃N₄所需的压强也较高.α → γ 相变的相界可以表示成 P=16.29- 1.835-10^-2 T+9.33945-10^-5T²-2.16759-10^-7T³+2.91795-10^-10T⁴.本文还分析了Si₃N₄同质异相体在高压下的态密度和能带.在α-Si₃N₄中主要是Si-s, p和N-s,p的轨道杂化对晶体的稳定性起作用.α和β-Si₃N₄都具有Γ_V-Γ_C类型的间接带隙(分别是4.9~eV和4.4~eV)而γ-Si₃N₄具有直接带隙(3.9~eV). 研究还发现α-Si₃N₄和β-Si₃N₄的价带顶分别沿着Γ-M和Γ-A方向.本文的计算结果和已有的实验数据是一致的.     

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance--voltage measurement. Using capacitance--frequency measurement, it finds one type of trap in conventional DHEMTs with τ_T=(0.5-6) ms and D_T= (1 - 5) × 10¹³ cm^-2·eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ_T(f)=(0.2-2) μs and slow with τ_T(s)=(0.5-6) ms. The density of trap states evaluated on the EHEMTs is D_T(f)=(1 - 3) × 10¹² cm^-2·eV^-1 and D_T(s)=(2 - 6) × 10¹² cm^-2·eV^-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.     

Ni-15%Mo合金熔体热物理性质的Monte Carlo模拟

采用EAM势对6×6×6的Ni-15%Mo合金熔体进行Monte Carlo模拟,通过对不同温度下获得的NVT系统的平衡态统计分析得出Ni-15%Mo合金熔体在过冷态和过热态时的热物理性质.通过构造系统生成新表面,表面张力做功使系统能量发生改变,从而得到液态表面张力的模拟结果.Ni-15%Mo合金熔体的表面张力在1500—2000 K的温度范围内,随温度的变化规律为σ=1.918-1.130×10^-3（T-T_m） N/m 关键词： Monte Carlo模拟 表面张力 比热 Ni-15%Mo合金     

Ab initio study of Yb on the Ge(111)–(3 × 2) and Si(111)–(3 × 2) surfaces

The surface reconstruction, 3 × 2, induced by Yb adsorption on a Ge (Si)(111) surface has been studied using first principles density-functional calculation within the generalized gradient approximation. The two different possible adsorption sites have been considered: (i) H₃ (this site is directly above a fourth-layer Ge (Si) atom) and (ii) T₄ (directly above a second-layer Ge (Si) atom). We have found that the total energies corresponding to these binding sites are nearly the same, indeed for the Yb/Ge (Si)(111)–(3 × 2) structure the T₄ model is slightly energetic by about 0.01 (0.08) eV/unitcell compared with the H₃ model. In particular for the Ge sublayer, the energy difference is small, and therefore it is possible that the T₄, H₃, or T₄H₃ (half of the adatoms occupy the T₄ adsorption site and the rest of the adatoms are located at the H₃ site) binding sites can coexist with REM/Ge(111)–(3 × 2). In contrast to the proposed model, we have not determined any buckling in the Ge = Ge double bond. The electronic band structures of the surfaces and the corresponding natures of their orbitals have also been calculated. Our results for both substrates are seen to be in agreement with the recent experimental data, especially that of the Yb/Si(111)–(3 × 2) surface.     

Mixed conductivity,stability and thermomechanical properties of Ni-doped La(Ga,Mg)O3−δ

Perovskite-type LaGa_0.65Mg_0.15Ni_0.20O_3−δ exhibiting oxygen transport comparable to that in K₂NiF₄-type nickelates was characterized as a model material for ceramic membrane reactors, employing mechanical tests, dilatometry, oxygen permeability and faradaic efficiency measurements, thermogravimetry (TG), and determination of the total conductivity and Seebeck coefficient in the oxygen partial pressure range from 10^− 15 Pa to 40 kPa. Within the phase stability domain which is similar to La₂NiO_4+δ, the defect chemistry of LaGa_0.65Mg_0.15Ni_0.20O_3−δ can be adequately described by the ideal solution model with oxygen vacancies and electron holes to be the only mobile defects, assuming that Ni²⁺ may provide two energetically equivalent sites for hole location. This assumption is in agreement with the density of states, estimated from thermopower, and the coulometric titration and TG data suggesting Ni⁴⁺ formation in air at T < 1150 K. The hole conductivity prevailing under oxidizing conditions occurs via small-polaron mechanism as indicated by relatively low, temperature-activated mobility. The ionic transport increases with vacancy concentration on reducing p(O₂) and becomes dominant at oxygen pressures below 10^− 7–10^− 5 Pa. The average thermal expansion coefficients in air are 11.9 × 10^− 6 and 18.4 × 10^− 6 K^− 1 at 370–850 and 850–1270 K, respectively. The chemical strain of LaGa_0.65Mg_0.15Ni_0.20O_3−δ ceramics at 1073–1123 K, induced by the oxygen partial pressure variations, is substantially lower compared to perovskite ferrites. The flexural strength determined by 3-point and 4-point bending tests is 167–189 MPa at room temperature and 85–97 MPa at 773–1173 K. The mechanical properties are almost independent of temperature and oxygen pressure at p(O₂) = 1–2.1 × 10⁴ Pa and 773–1173 K.     

100 MeV Si8+ ion induced luminescence and thermoluminescence of nanocrystalline Mg2SiO4:Eu3+

Nanoparticles of Mg₂SiO₄:Eu³⁺ have been prepared by the solution combustion technique and the grain size estimated by PXRD is found to be in the range 40–50 nm. Ionoluminescence (IL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ ions with fluences in the range 1.124–22.48×10¹² ions cm^?2 are carried out at IUAC, New Delhi, India. Five prominent IL bands with peaks at 580 nm, 590 nm, 612 nm, 655 nm and 705 nm are recorded. These characteristic emissions are attributed to the luminescence centers activated by Eu³⁺ cations. It is found that IL intensity decreases rapidly in the beginning. Later on, the intensity decreases slowly with further increase of ion fluence. The reduction in the ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O (ν₃) and Si–O (2ν₃) bonds present on the surface of the sample. The red emission with peak at 612 nm is due to characteristic emission of ⁵D₀→⁷F₂ of the Eu³⁺ cations. Thermoluminescence (TL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ cations with fluences in the range 5×10¹¹ ions cm^?2 to 5×10¹³ ions cm^?2 are made at RT. Two prominent and well resolved TL glows with peaks at ～220 °C and ～370 °C are observed. It is observed that TL intensity increases with increase of ion fluence. This might be due to creation of new traps during swift heavy ion irradiation.     

Knight shifts for short-lived β emitters in Pt

The Knight shifts K for short-lived β emitters ¹²N and ²⁷Si implanted in Pt have been measured by means of β-NMR technique. The results were K(¹²N in Pt)= +(5.8 ± 2.1)× 10^-4 and K(²⁷Si in Pt)= +(1.4 ± 0.8)× 10^-3. The spin–lattice relaxation time T₁ was measured for ¹²N in Pt. The result was T₁(¹²N in Pt, T=300 K)= 66 ± 8 ms, thus, T₁T= 20 ± 2 Ks. The present Knight shifts are in good agreement with the KKR band structure calculation with local lattice relaxation determined theoretically. This revised version was published online in August 2006 with corrections to the Cover Date.     

Mg2Si的电子结构和热电输运性质的理论研究

利用全势线性缀加平面波法,对Mg₂Si的几何结构和电子结构进行了计算,得到了稳定的晶格参数以及能带和电子态密度.能带结构表明,Mg₂Si为间接带隙半导体,禁带宽度为020 eV.在此基础上利用玻尔兹曼输运理论和刚性带近似计算了材料的电导率、Seebeck系数和功率因子.结果表明,在温度为700 K时p型和n型掺杂的Mg₂Si功率因子达到最大时的最佳载流子浓度分别为7749×10¹⁹ cm^-3和 关键词： 2Si')" href="#">Mg₂Si 全势线性缀加平面波法 热电输运性质     

Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor

AlGaN/GaN depletion-mode high-electron-mobility transistor(D-HEMT) and fluorine(F) plasma treated enhancement-mode high-electron-mobility transistor(E-HEMT) are exposed to 60Co gamma radiation with a dose of 1.6 Mrad(Si).No degradation is observed in the performance of D-HEMT.However,the maximum transconductance of E-HEMT is increased after radiation.The 2DEG density and the mobility are calculated from the results of capacitance-voltage measurement.The electron mobility decreases after fluorine plasma treatment and recovers after radiation.Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices.A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT,but the density of the trap decreases by radiation.Fitting of G p /ω data yields the trap densities D T =(1-3) × 10 12 cm-2 · eV-1 and D T =(0.2 0.8) × 10 12 cm-2 ·eV-1 before and after radiation,respectively.The time constant is 0.5 ms-6 ms.With F plasma treatment,the trap is introduced by etch damage and degrades the electronic mobility.After 60Co gamma radiation,the etch damage decreases and the electron mobility is improved.The gamma radiation can recover the etch damage caused by F plasma treatment.     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation

Photoluminescence (PL) properties of Er-doped β-FeSi₂ (β-FeSi₂:Er) and Er-doped Si (Si:Er) grown by ion implantation were investigated. In PL measurements at 4.2 K, the β-FeSi₂:Er showed the 1.54 μm PL due to the intra-4f shell transition of ⁴I_13/2→⁴I_15/2 in Er³⁺ ions without a defect-related PL observed in Si:Er. In the dependence of the PL intensity on excitation photon flux density, the obtained optical excitation cross-section σ in β-FeSi₂:Er (σ=7×10⁻¹⁷ cm²) is smaller than that in Si:Er (σ=1×10^-15 cm²). In the time-resolved PL and the temperature dependence of the PL intensity, the 1.54 μm PL in β-FeSi₂:Er showed a longer lifetime and larger activation energies for non-radiative recombination (NR) processes than Si:Er. These results revealed that NR centers induced by ion implantation damage were suppressed in β-FeSi₂:Er, but the energy back transfer from Er³⁺ to β-FeSi₂ was larger than Si:Er.     

Picosecond excite-and-probe absorption measurement of nonradiative transition dynamics in emerald

The nonradiative transition dynamics between the excited ⁴T₂ state and the metastable ²E storage state of the trivalent chromium ion in emerald is investigated using the picosecond excite-and-probe absorption technique. An intra-⁴T₂ state vibrational relaxation time of 23 ps, and a ⁴T₂→²E electronic relaxation time of 20 ps are obtained. The thermal repopulation rate of the ⁴T₂ state from the metastable ²E level is ~9.0×10⁹ s^-1.     

多晶Li3+xV1-xTxO4(T=Ge,Si)离子导电性能的改善

本文用阻抗谱方法研究了Li_3+xV_1-xT_xO₄(T=Si,Ge)多晶的离子导电性,发现一些工艺条件如成型压强、烧结时间和烧结程序对电导率有很大影响。注意分析了这些影响的物理起因。最佳工艺条件是:在大约8t/cm²压强下成型样品。在1000℃连续烧结5至6天,烧结过程中,应尽量避免温度波动。在此条件下制备的Li_3.5V_0.5Ge_0.5关键词：     

Lattice thermal expansion of cesium plumbo chloride

The temperature variation of the lattice parameter of CsPbCl₃ in the cubic phase has been studied by x-ray method, from a determination of the precision lattice parameter at various temperatures, ranging from 50°C to 400°C. The coefficient of thermal expansion of CsPbCl₃ can be expressed by the quadratic equation,α _T = 21.6 × 10⁻⁶ + 2.44 × 10⁻⁹ T + 5.90 × 10⁻¹¹ T ².     

Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH₃COO)₂ and Na₂S₂O₃, and pH is controlled in an acidic region by adding H₂SO₄. The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1×10¹¹, 1×10¹², 1×10¹³ and 1×10¹⁴ ions/cm² using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences.