Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique |
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| Institution: | 1. Department of Chemistry, University of Bath, Bath BA2 7AY, UK;2. Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU, UK |
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| Abstract: | CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH3COO)2 and Na2S2O3, and pH is controlled in an acidic region by adding H2SO4. The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1×1011, 1×1012, 1×1013 and 1×1014 ions/cm2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences. |
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