Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)

Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in reactive atmospheres of O₂ and Ar, at working pressure of 8 × 10⁻² Pa. Film stoichiometry was determined in the range from Fe_2.95O₄ to Fe_2.97O₄. Randomly oriented polycrystalline thin films were grown on GaAs(1 0 0) while for the Al₂O₃(0 0 0 1) substrates the films developed a (1 1 1) preferred orientation. Interfacial Fe³⁺ diffusion was found for both substrates affecting the magnetic behaviour. The temperature dependence of the resistance and magnetoresistance of the films were measured for fields up to 6 T. Negative magnetoresistance values of ∼5% at room temperature and ∼10% at 90 K were obtained for the as-deposited magnetite films either on GaAs(1 0 0) or Al₂O₃(0 0 0 1).     

YBa2Cu3O7-δ薄膜热激发磁通蠕动研究

本文选择两块零电阻温度分别为82K和71K超导性能不同的薄膜样品,同步进行了电阻在外磁场中展宽的测量,并用Palstra所提出的Arrhenius定律研究两样品热激活能的差别。实验发现样品热激活能随磁场增加线性下降。由测量结果推出的不可逆线仍有B^*-(1-T^*/T_c)^3/2形式。 关键词：     

On the preparation and the characterization of superconducting thin films of YBa2Cu3O7−x

The results of our initial efforts to deposit thin films of YBa₂Cu₃O_7−x system on sapphire substrate are described. The deposited films are shiny black in appearance and are of quite uniform chemical composition. The annealed films exhibit zero resistance superconducting transition temperatureT _c(R=0) ranging between 23 K and 30 K.     

c-Axis orientation control of YBa2Cu3O7−x films grown on inclined-substrate-deposited MgO-buffered metallic substrates

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on non-textured metal substrates with inclined-substrate-deposited (ISD) MgO as template. The biaxial texture feature of the films was examined by X-ray pole-figure analysis, φ-scan, and 2θ-scan. A tilt angle of 32° of the MgO[001] with respect to the substrate normal was observed. Epitaxial growth of YBCO films with c-axis tilt angle of 32° with respect to the substrate normal was obtained on these substrates with SrTiO₃(STO) as buffer layer. Whereas, by choosing yttria-stabilized ZrO₂ and CeO₂ instead of STO as buffer layer, a c-axis untilted YBCO film was obtained. Higher values of T_c=91 K and J_c=5.5×10⁵ A/cm² were obtained on the c-axis untilted YBCO films with 0.46 μm thickness at 77 K in zero field. Comparative studies revealed a unique role of CeO₂ in controlling the orientation of the YBCO films grown on ISD-MgO buffered metal substrates.     

200 MeV Ag ion irradiation created columnar defects and enhanced critical current density of La-2125 type superconducting thin films

We have deposited c-axis oriented thin films of La_1.5Dy_0.5CaBa₂Cu₅O_z (La-2125) tetragonal superconductor on LaAlO₃(001) substrates by pulsed laser deposition. These films were irradiated with 200 MeV Ag⁺¹⁵ ions. Atomic force microscopy and elastic recoil detection analysis indicate that the irradiation has created columnar defects through the entire thickness (2000 Å) of these films. With ion irradiation up to 1×10¹¹ ions/cm², the critical current density (J_c(H)) enhances by fivefold, which is attributed to the augmented flux pinning by the columnar defects. A further increase in irradiation to 1×10¹² ions/cm² causes reduction in J_c(H) due to distorted morphology of the film. Our work shows that the enhancement in J_c(H) of the irradiated La-2125 film is comparable to that in irradiated RE-123 (RE = rare earth ion). Also, as the La-2125 type films have greater chemical stability than RE-123, La-2125 type superconductors are potential candidates for applications. It is interesting to note that there are partial flux jumps observed to occur symmetrically in the magnetic hysteresis of irradiated La-2125 thin films with enhanced J_c(H).     

Relationship between crystallization process and superconducting properties of YBCO films by TFA–MOD method using starting solution with various compositions

We have investigated the influence of partial pressure of water vapor [P(H₂O)] in the crystallization process on the superconducting properties of YBa₂Cu₃O_7−y (YBCO) films fabricated by a trifluoroacetate–metal organic deposition (TFA–MOD) method. The starting solution with different compositions of Y: Ba:Cu = 1.0:2.0:3.0 and 1.0:1.5:2.0 were studied. The critical current density (J_c) values of YBCO films fabricated from Y:Ba:Cu = 1.0:2.0:3.0 starting solution significantly increase (1.71 → 2.55 MA/cm²) with increasing P(H₂O) from 12.3 to 47.4 kPa. In the YBCO films fabricated from Y:Ba:Cu = 1.0:1.5:2.0 starting solution, high J_c values of over 2.5 MA/cm² were recognized in a wide range of P(H₂O) (12.3–47.4 kPa). One of the reason for J_c improvement is the suppression of coarsening of the secondary phases grains such as Y₂Cu₂O₅ and CuO due to increase in growth rate of YBCO layer in the crystallization process. The J_c values of all YBCO films decreased as P(H₂O) increased up to 70.1 kPa. This degradation of J_c values may be caused by difference of crystal growth mechanism in high growth rate.     

Preparation of high J c YBa2Cu3O7−δ superconducting thin films by ion beam sputtering deposition

Preparation of high T _c and high J _c YBa₂Cu₃O_7– superconducting thin films by ion beam sputtering deposition is reported. The main factors affecting the composition of the films and the orientation of the crystal grains have been examined. Experimental results show that the Y, Ba and Cu composition of as-deposited films can be conveniently and accurately adjusted by a combined sputtering target which consists of a large sintered target of YBa₂Cu₃O_7– and a small one that is Ba and Cu rich (YBa_2.5Cu_3.3O_x). Fabrication conditions of highly oriented superconducting thin films are described. YBa₂Cu₃O_7– superconducting films with zero resistance at 88–90.5K and critical current density J _c (at 77K) of 1.5×10⁵ A/cm² are obtained.     

High-Jc GdBa2Cu3O7−δ films fabricated by the metal–organic deposition process

We report a successful fabrication of high-J_c GdBa₂Cu₃O_7−δ (GdBCO) films by the metal–organic deposition process on the LaAlO₃ (LAO) (0 0 1) substrates. The coating solution was prepared by mixing Gd, Cu fluorine-free sources with Ba trifluoroacetate. Samples were dip-coated, pyrolized within 3 h at the temperature up to 400 °C in a humid oxygen atmosphere, and finally fired at various high temperatures in 100 ppm Ar/O₂ atmosphere. The GdBCO films fired at 775 and 800 °C exhibited J_c values of ∼2.1 MA/cm² at 77 K in a self-field, which are attributable to both high T_c,zero values of ∼89 K and high in-plane textures of 1.3–1.4°. Above 800 °C, however, the superconducting properties of GdBCO films are degraded due to the thermal decomposition of GdBCO film in 100 ppm Ar/O₂ atmosphere.     

A study on the microwave responses of YBCO and TBCCO thin films by coplanar resonator technique

YBa₂Cu₃O₇(YBCO) thin films have been prepared by thermal coevaporation on LaAlO₃(LAO) substrates, and Tl₂Ba₂CaCu₂O₈(TBCCO) thin films are synthesized by magnetron sputtering method on LAO substrates. The transition temperature T_c is 90\,K for YBCO/LAO and 104\,K for TBCCO/LAO. Microwave responses of the films are studied systematically by coplanar resonator technique. Energy gaps of the films obtained are {\it\Delta}₀=1.04k_BT_c for YBCO films and ${\it\Delta}_0=0.84k_BT_c for TBCCO films by analysing the temperature dependence of resonant frequencies of coplanar resonator. Penetration depth at 0\,K \lambda ₀=198nm for YBCO films and \lambda₀ =200nm for TBCCO films could also be obtained by using the weak coupling theory and two fluid theory. Results of penetration depth and energy gap confirm the weak coupling properties of the films. In addition, microwave surface resistances R_s of YBCO/LAO and TBCCO/LAO are also investigated by analysing the quality factor and insert loss of the coplanar resonator. Surface resistance of TBCCO/LAO is less than that of YBCO/LAO, so that TBCCO/LAO films may have more potential applications.     

Superconducting screen printed thick films of YBa2Cu3O7 and Bi1.6Pb0.4Sr1.6Ca2.4Cu3O10 on polycrystalline substrates

Thick films of YBa₂Cu₃O₇ and Bi_1.6Pb_0.4Sr_1.6Ca_2.4Cu₂O₁₀ have been prepared using a screen printing method on polycrystalline substrates. The films have been characterized by X-ray diffraction, electrical measurements and SEM observations. YBa₂Cu₃O₇ films exhibited T_c ranging from 80 to 87 K on Y₂BaCuO₅ substrates while Bi_1.6Pb_0.5Sr_1.6Ca_2.4Cu₃O₁₀ films on polycrystalline MgO reached the zero resistance state at 104 K with critical current densities of up to 10 A/cm² at 77 K.     

Critical current densities of high pressure oxygen sputtered thin films of YBa2Cu3O7−x by non-resonant rf absorption method

The critical current densities (J _c) have been measured at 77K in high pressure oxygen sputtered thin films of YBa₂Cu₃O_7−x superconductor using the non-resonant rf absorption technique. High values ofJ _c (∼ 10⁵ A/cm²) are observed in these relatively large area (∼ 1·2 cm²) films.     

Growth of thin, crystalline oxide, nitride, and oxynitride films on NiAl and CoGa surfaces

At 300 K, an amorphous Al-oxide film is formed on NiAl(001) upon oxygen adsorption. Annealing of the oxygen-saturated NiAl(001) surface to 1200 K leads to the formation of thin well-ordered θ-Al₂O₃ films. At 300 K, and low-exposure oxygen atoms are chemisorbed on CoGa(001) on defects and on step edges of the terraces. For higher exposure up to saturation, the adsorption of oxygen leads to the formation of an amorphous Ga-oxide film. The EEL spectrum of the amorphous film exhibits two losses at ≈400 and 690 cm^-1. After annealing the amorphous Ga-oxide films to 550 K thin, well-ordered β-Ga₂O₃ films are formed on top of the CoGa(001) surface. The EEL spectrum of the β-Ga₂O₃ films show strong Fuchs-Kliewer (FK) modes at 305, 455, 645, and 785 cm^-1. The β-Ga₂O₃ films are well ordered and show (2×1) LEED pattern with two domains, oriented perpendicular to each other. The STM study confirms the two domains structure and allows the determination of the two-dimensional lattice parameters of β-Ga₂O₃. The vibrational properties and the structure of β-Ga₂O₃ on CoGa(001) and θ-Al₂O₃ on NiAl(001) are very similar. Ammonia adsorption at 80 K on NiAl(111) and NiAl(001) and subsequent thermal decomposition at elevated temperatures leads to the formation of AlN. Well-ordered and homogeneous AlN thin films can be prepared by several cycles of ammonia adsorption and annealing to 1250 K. The films render a distinct LEED pattern with hexagonal [AlN/NiAl(111)] or pseudo-twelve-fold [AlN/NiAl(001)] symmetry. The lattice constant of the grown AlN film is determined to be a_AlN= 3.11 Å. EEL spectra of AlN films show a FK phonon at 865 cm^-1. The electronic gap is determined to be E_g= 6.1±0.2 eV. GaN films are prepared by using the same procedure on the (001) and (111) surfaces of CoGa. The films are characterized by a FK phonon at 695 cm^-1 and an electronic band gap E_g= 3.5±0.2 eV. NO adsorption at 75 K on NiAl(001) and subsequent annealing to 1200 K leads to the formation of aluminium oxynitride (AlON). An oxygen to nitrogen atomic ratio of ≈2:1 was estimated from the analysis of AES spectra. The AlON films shows a distinct (2×1) LEED pattern and the EEL spectrum exhibits characteristic Fuchs-Kliewer modes. The energy gap is determined to be E_g= 6.6±0.2 eV. The structure of the AlON film is derived from that of θ-Al₂O₃ formed on NiAl(001). Received: 21 March 1997/Accepted: 12 August 1997     

High performance GdBa2Cu3O7−z film preparation by non-fluorine chemical solution deposition approach

Biaxially textured GdBa₂Cu₃O_7?z (GdBCO) films with T_c above 93 K have been prepared on (0 0 l) LaAlO₃ substrate by self-developed non-fluorine polymer-assisted chemical solution deposition (PA-CSD) approach. The GdBCO films show smooth and crack-free morphology. Many nanoscale particles with homogeneous distribution are observed in the GdBCO films, which have not been observed yet in the YBa₂Cu₃O_7?z (YBCO) films prepared by the same processing technique. Besides a high J_c (77 K, 0 T) of 2.28 MA/cm², the optimized GdBCO films show a better J_c–B behavior and an improved high-field J_c, compared to the YBCO films.     

Y1Ba2Cu3O7-δ thin films from KrF laser ablation with substrate heating and in situ patterning by CO2 laser radiation

Y₁Ba₂Cu₃O_7– thin films were deposited by KrF laser ablation while replacing conventional contact heating by cw CO₂ laser irradiation of the substrate front surface. The HTSC films obtained on (100)ZrO₂ showed T _c(R=0)=90 K, T(90–10%)=0.5 K, j _c=2.5 × 10⁶ A/cm², a sharp transition in the ac susceptibility X(T), and pure c-axis orientation. Micrographs of thin films (< 0.5 m) showed a smooth morphology while thick films (>1 m) contained many crystallites sticking in the bulk material. Furthermore, in situ patterning was achieved during deposition by local laser heating of a selected substrate surface area. The resulting planar films contained amorphous, semiconducting parts only 1 mm or less apart from crystalline material showing the above HTSC quality.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

High quality epitaxial YBa₂Cu₃O_7-x thin films have been succcessfully prepared by dc magnetron sputtering deposition, on (100) and (110) aligned SrTiO₃, LaAlO₃ and yttria-stabilized zirconia (YSZ) substrates. The films showed zero resistance around 90 K and had a J_c (at 77 K, H=0) over 10⁶A/cm². It was found that superconducting properties and structures of the films were strongly dependent on oxygen pressure and substrate temperature. The epitaxial structure of the films have been studied by X-ray diffraction. Rutherford backscattering and channeling spectroscopy, X-ray double-crystal diffraction and transmission election microscopy. The experimental results demonstrated that the epitaxial YBa₂Cu₃O_7-x films had excellent superconducting properties and quite perfect structure.     

120 K superconductivity and the zero-field absorption in the BiCaSrCu2Ox system

Onset transition temperature (123±1) K was observed in the BiCaSrCu₂O_x bulk materials prepared by means of conventional ceramic technique. The resistance and AC susceptibility measurements show that there are two highT _c phases. EPR measurement shows that belowT _c (R=0), an intense line at zero field was observed. It is either associated with the glass feature or the spin triplet transition of Cu²⁺–Cu²⁺ pair via exchange interaction.The Project Supported by National Natural Science Foundation of China     

蓝宝石基片上制备大面积Tl2Ba2CaCu2O8超导薄膜

在2英寸双面蓝宝石基片上采用CeO₂作为缓冲层制备了高质量Tl₂Ba₂CaCu₂O₈(Tl-2212)超导薄膜.以金属铈作为溅射靶材,采用射频磁控反应溅射法生长了c轴织构的CeO₂缓冲薄膜,并研究了不同生长条件对于CeO₂缓冲层的晶体结构及表面形貌的影响.超导薄膜采用直流磁控溅射和后热处理的方法制备.扫描电子显微镜(SEM)图像显示,超     

Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3

We report fabrication of nanostructured La_0.67Ca_0.33MnO₃ (NS-LCMO) by pulsed-laser deposition on the surface of porous Al₂O₃. The resistance peak temperature (T_p) of the NS-LCMO increases with increasing average thickness of the films, while their Curie temperatures (T_c) remain unchanged. The coercive field of the samples increases with decreasing film thickness and its temperature dependence can be well described by H_c(T)=H_c(0)[1-(T/T_B)^1/2]. A large magnetoresistance and strong memory effect were observed for the NS-LCMO. The results are discussed in terms of the size effect, Coulomb blockade and magnetic tunneling effect. This work also demonstrates a new way to get nanostructured manganites. PACS 75.70.Ak; 75.75.+a; 72.80.Ga     

Superconductivity of thin films of lead,indium, and tin prepared in the presence of oxygen

We have studied the influence of oxygen on the superconducting properties of thin films of lead, indium and tin deposited on glass or sapphire substrates. In addition, the morphological microstructure was investigated by scanning electron microscopy. The film thickness was 1.0 μm, and the partial pressure of O₂ during the film deposition was raised up to 1×10⁻⁴ Torr. In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O₂-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofT _c due to the oxygen. The strongest increase ofT _c (up to 8%) was observed in the O₂-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityj _c we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofj _c due to the O₂-treatment which must be interpreted in terms of bulk pinning.     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.