Studies on the Reactivities of Undecatungstogallates K＿n［GaW＿（11）O＿（39）M（H＿2O）］·xH＿2O（M＝Mn，Co，Ni，Cu，Cr，FeorZn）

ＳｔｕｄｉｅｓｏｎｔｈｅＲｅａｃｔｉｖｉｔｉｅｓｏｆＵｎｄｅｃａｔｕｎｇｓｔｏｇａｌｌａｔｅｓＫ＿ｎ［ＧａＷ＿（１１）Ｏ＿（３９）Ｍ（Ｈ＿２Ｏ）］·ｘＨ＿２Ｏ（Ｍ＝Ｍｎ，Ｃｏ，Ｎｉ，Ｃｕ，Ｃｒ，ＦｅｏｒＺｎ）ＬＩＵＪｉｎｇ－ｆｕ，ＺＨＡＮＸｉａｏ－ｐ...     

SnO2超微粒LB膜初探

用胶体化学法制备了ＳｎＯ＿２超微粒（ｕｌｔｒａｆｉｎｅｐａｒｔｉｃｌｅ，ＵＦＰ）水溶胶和有机溶胶，研究了ＳｎＯ＿２ＵＦＰ在十二烷基苯磺酸钠和硬脂酸作用下的ＬＢ膜成膜性，并对ＳｎＯ＿２和ｓｎＯ＿２ＵＦＰ的气敏特性做了初步的探讨．     

Ag/La0.6Sr0.4MnO3基催化剂上CH3OH和CO的完全氧化

合成了Ａｇ／Ｌａ０．６Ｓｒ０．４ＭｎＯ３、Ａｇ／Ｌａ０．６Ｓｒ０．４ＭｎＯ３／γ－ＡＩ２Ｏ３两毓催化剂,发现钙钛矿型Ｌａ０．６Ｓｒ０．４ＭｎＯ３对低浓度ＣＨ３ＯＨ或ＣＯ的完全氧化显示出相当高的催化活性,适量Ａｇ对钙钛矿型Ｌａ０．６Ｓ５０．４ＭｎＯ３基质的修使其对ＣＨ３ＯＨ或ＣＯ完全氧化催化活性获明显提高;在６％Ａｇ／２０％Ｌａ０．６Ｓｒ０．４ＭｎＯ３／γ－ＡＩ２Ｏ３催化剂 ,ＣＨ３ＯＨ完全氧化的Ｔ     

INSITUFTIR SPECTRAL STUDY OF THE OXYGEN ADSPECIES ON SrF_2／La_2O_3 CATALYST DURING THE OXIDATIVE COUPLING OF METHANE

ＩＮＳＩＴＵＦＴＩＲＳＰＥＣＴＲＡＬＳＴＵＤＹＯＦＴＨＥＯＸＹＧＥＮＡＤＳＰＥＣＩＥＳＯＮＳｒＦ＿２／Ｌａ＿２Ｏ＿３ＣＡＴＡＬＹＳＴＤＵＲＩＮＧＴＨＥＯＸＩＤＡＴＩＶＥＣＯＵＰＬＩＮＧＯＦＭＥＴＨＡＮＥ￥ＲｕｉＱｉａｎｇＬＯＮＧ；ＳｈｕｉＱｉｎＺＨＯ...     

Synthesis and Crystal Structural Characterization of （NH＿4）＿5H＿3Mn＿3V＿（12）O＿（40）·15H＿2O

ＳｙｎｔｈｅｓｉｓａｎｄＣｒｙｓｔａｌＳｔｒｕｃｔｕｒａｌＣｈａｒａｃｔｅｒｉｚａｔｉｏｎｏｆ（ＮＨ＿４）＿５Ｈ＿３Ｍｎ＿３Ｖ＿（１２）Ｏ＿（４０）·１５Ｈ＿２ＯＷＡＮＧＺｕｏ－Ｐｉｎｇ;ＬＩＵＪｉｎｇ－ｆｕａｎｄＷＡＮＧＥｎ－ｂｏ（Ｄｅｐａｔｍｅｎ...     

Mn—Ag／r—Al2O3催化剂中氧的性能

本文运用ＴＰＲ、ＴＰＤ－ＭＳ、ＸＲＤ等技术研究了Ｍｎ－Ａｇ／ｒ－Ａｌ２Ｏ３催化剂的还原性能和再氧化能力。结果表明，Ｍｎ－Ａｇ／ｒ－Ａｌ２Ｏ３中银物相由Ａｇ＾０和Ａｇ２Ｏ组成，锰物相由β－ＭｎＯ２和Ｍｎ２Ｏ３组成。Ｍｎ／ｒ－Ａｌ２Ｏ３催化剂的ＴＰＲ有二个还原峰，分别是ＭｎＯ２和Ｍｎ２Ｏ３的还原。Ａｇ促使ＭｎＯ２和Ｍｎ２Ｏ３的朱明显向低温方向移动，而且ＭｎＯ２和Ｍｎ２Ｏ３的还原峰融合成一个还原峰。Ｍｎ     

三环己基锡O，O＇－二（4－氯苯基）二硫代磷酸酯和二丁基锡双［O，O＇－二（4－甲基苯基）二硫代磷酸酯］的分子和晶体结构

三环己基锡Ｏ，Ｏ＇－二（４－氯苯基）二硫代磷酸酯（Ⅰ），Ｃ＿（３０）Ｈ＿（４１）Ｃｌ＿２Ｏ＿２ＰＳ＿２Ｓｎ，Ｍ＿ｒ＝７１８．３６，单斜晶系，Ｐ２＿１／ｎ，ａ＝１６．１５１（２），ｂ＝９．４１５（１），ｃ＝２２．９８７（３），β＝１０５．６９（１）°，Ｚ＝４，Ｄｃ＝１．４１８ｇ·ｃｍ￣（－３），Ｒ＝０．０６３；二丁基锡双［Ｏ，Ｏ＇－二（４－甲基苯基）二硫代磷酸酯］（Ⅱ），Ｃ＿（３６）Ｈ＿（４６）Ｏ＿４Ｐ＿２Ｓ＿４Ｓｎ，Ｍ＿ｒ＝８５１．６６，单斜晶系，Ｐ２＿１／ｃ，ａ＝１２．２８４（４），ｂ＝９．８０７（１），ｃ＝３４．４７１（８），β＝９９．０２（２）°，Ｚ＝４，Ｄ＿ｃ＝１．３７９ｇ·ｃｍ（－３），Ｒ＝０．０４２。化合物Ⅰ具有单分子的四配位变形四面体结构。其Ｓｎ－Ｓ（１）键长为２．５０１（２）；而Ｓｎ与Ｓ（２）的原子间距则为３．５９７；化合物Ⅱ具有单分子的六配位变形八面体结构，其Ｓｎ－Ｓ（１），Ｓｎ－Ｓ（２），Ｓｎ－Ｓ（３）和Ｓｎ－Ｓ（４）的键长分别为２．４９５（３），２．４９３（２），３．２４４（４）和３．２２８（３）。     

微乳液的增敏作用研究──Ni（Ⅱ）－5－Br－PADAP的分光光度法测定

以含水量８０％的阴离子型ＳＤＳ／ｎ－Ｃ＿（５）Ｈ＿（１１）ＯＨ／ｎ－Ｃ＿（７）Ｈ＿１６／Ｈ＿（２）Ｏ微乳液为介质，进行了Ｎｉ（Ⅱ）－５－Ｂｒ－ＰＡＤＡＰ的分光光度研究，其表观摩尔吸光系数为１．１３×１０￣５Ｌ·ｍｏｌ￣（－１）·ｃｍ￣（－１），与相应含水量的ＳＤＳ胶束介质比较，测定的灵敏度显著提高（后者为７．５×１０￣４Ｌ·ｍｏｌ￣（－１）·ｃｍ￣（－１）），样品分析结果令人满意。     

低浓度甲烷甲醇深度氧化Ag/La0.6Sr0.4MnO3催化剂

用柠檬酸溶胶－凝胶法制备钙钛矿型Ｌａ０．６Ｓｒ０．４ＭｎＯ３氧化物,并用Ａｇ对其进行修饰,制得Ａｇ／Ｌａ０．６Ｓｒ０．４ＭｎＯ３系列催化剂。结果表明,６％Ａｇ／Ｌａ０．６Ｓｒ０．４ＭｎＯ３催化剂上甲烷或甲醇氧化转化９５％时的反应温度Ｔ９５可低至７３５Ｋ（对ＣＨ４）或４２１Ｋ（对ＣＨ３ＯＨ）;适量Ａｇ的负载修饰并不改变催化剂基质氧化物Ｌａ０．６Ｓｒ０．４ＭｎＯ３的纳米级钙钛矿型结构;Ａｇ的掺杂诱使催     

EXPERIMENTAL STUDIES ON A NEW CHEMICAL OSCILLATING REACTION SYSTEM OF PYRUVIC ACID－BrO_3~－－H_2SO_4－［CuL］~（2＋）

ＥＸＰＥＲＩＭＥＮＴＡＬＳＴＵＤＩＥＳＯＮＡＮＥＷＣＨＥＭＩＣＡＬＯＳＣＩＬＬＡＴＩＮＧＲＥＡＣＴＩＯＮＳＹＳＴＥＭＯＦＰＹＲＵＶＩＣＡＣＩＤ－ＢｒＯ＿３￣－－Ｈ＿２ＳＯ＿４－［ＣｕＬ］￣（２＋）￥ＬｉａｎｇＺＨＡＯ；ＣｈａｎｇＣｈｕｎＷＵ；Ｃｈｕａ...     

射频溅射制备的多晶ZnO膜表面氧的吸附和脱附

多晶的六角密排的ｃ轴平行于衬底的ＺｎＯ膜已用射频溅射的方法制备出来，一电场感应的氧吸附在这些膜上被观察到由紫外光照射或与Ａｒ离子反应所产生的氧的脱附可使膜的电导率增加６－７个数量级，并且一个积累层在膜的表面显现出来。     

磁控溅射制备择优取向氮化铝薄膜

AlN薄膜;磁控反应溅射;磁控溅射制备择优取向氮化铝薄膜;晶面取向;X射线衍射     

In‐situ stress suppression of hydrogenated a‐CNx film prepared via Ar gas introduction

Evolution of hydrogenated amorphous carbon nitride films was investigated with an introduction of Ar gas in the deposition. The results showed that compressive stress of the films decreased versus an increase of Ar flow rate. Especially, at an Ar flow rate of 5 sccm the film exhibited lower compressive stress, higher hardness and lower root‐mean‐square (rms) roughness than the films deposited without Ar gas introduction. Structural analysis showed that the films with higher hardness, low compressive stress and lower rms roughness had relatively high sp² and nitrogen content. It was attributed to the assistance of Ar plasma, which can cause N atom to enter graphite ring easily and form curved graphite microstructure. Copyright © 2016 John Wiley & Sons, Ltd.     

Optical CO gas sensor using a cobalt oxide thin film prepared by pulsed laser deposition under various argon pressures

An optical CO gas sensor was investigated using cobalt oxide thin films prepared by pulsed laser deposition. The cobalt oxide films were deposited on quartz glass and silicon wafer substrates in Ar at 0.07-133 Pa. The morphology and crystal phase of the films were changed by Ar pressure. Sensitivity was estimated as the transmittance change of the film in dry air and at 200 ppm of CO gas ambient at 350 degrees C. The morphology of the films greatly affected the sensing properties. The optimum Ar pressure for cobalt oxide film preparation for CO gas sensing was suggested to be 13.3 Pa, based on the relationship between the morphology and the optical sensor properties of the films.     

Plasma-induced deposition of thin films of aluminum oxide

Plasma-induced deposition of wear-protecting A1₂O₃ films has been investigated for two different gas mixtures, one of which is ususally used in thermal CVD. It is shown that, contrary to thermal CVO, the properties of thin films deposited from an AlCl₃/O₂/Ar mixture are superior to those prepared from AICl₃/CO₂/H₂. High Vickers hardness of 1800-2500 and a low chlorine content of 0.7 at. % have been obtained in films deposited from an AICl₃/O₂/Ar mixture at a substrate temperature of 500°C.     

Retracted: Mass analysis by Ar‐GCIB‐dynamic SIMS for organic materials

Generally, dynamic secondary ion mass spectrometry (SIMS) has been mainly used as one of the most powerful tools for inorganic mass analysis. On the other hand, an Ar gas cluster ion beam (GCIB) has been developed and spread as a processing tool for surface flattening and also a projectile for time‐of‐flight (ToF) SIMS. In this study, we newly introduced an Ar‐GCIB as a primary ion source to a commercially available dynamic SIMS apparatus, and investigated mass spectra of amino acid films (such as Arginine and Glycine) and polymer films (Polyethylene: PE and Polypropylene: PP) as organic model samples. As a result, each characteristic fragment peak indicating the original molecular organic structure was observed in the acquired mass spectra. In addition, their own molecular ions of the amino acids were also clearly observed. Mass spectra of PE/PP blended‐polymer films acquired using Ar‐GCIB‐dynamic SIMS could be identified between pure PE and PE:PP = 1:3 mixture by applying principal component analysis (PCA).     

Structural properties of lithium thio-germanate thin film electrolytes grown by radio frequency sputtering

In this study, lithium thio-germanate thin film electrolytes have been successfully prepared by radio frequency (RF) magnetron sputtering deposition in Ar gas atmospheres. The targets for RF sputtering were prepared by milling and pressing appropriate amounts of the melt-quenched starting materials in the nLi(2)S + GeS(2) (n = 1, 2, and 3) binary system. Approximately 1 μm thin films were grown on Ni coated Si (Ni/Si) substrates and pressed CsI pellets using 50 W power and 25 mtorr (～3.3 Pa) Ar gas pressures to prepare samples for Raman and Infrared (IR) spectroscopy, respectively. To improve the adhesion between the silicon substrate and the thin film electrolyte, a sputtered Ni layer (～120 nm) was used. The surface morphologies and thickness of the thin films were determined by field emission scanning electron microscopy (FE-SEM). The structural properties of the starting materials, target materials, and the grown thin films were examined by X-ray diffraction (XRD), Raman, and IR spectroscopy.     

支化侧链偶氮聚电解质的光致二向色性和表面起伏光栅

通过后重氮偶合的方法合成了两种含支化侧链偶氮苯生色团的聚电解质PBANT AC和PBACT AC .用红外光谱、氢核磁共振谱、紫外 可见光光谱、热分析和元素分析等手段对聚合物的结构和性能进行了表征 .在 4 88nm的偏振Ar+ 激光的照射下 ,聚合物薄膜中的偶氮苯生色团可发生光致取向 ,取向有序度分别为 0 12和 0 0 9.在干涉偏振激光束的照射下 ,两种聚合物旋涂膜表面均形成了规则的正弦表面起伏光栅 ,其起伏深度分别为 4 0nm和 80nm左右 .用氦氖激光实时检测 ,测定了两种旋涂膜表面起伏光栅的一级衍射效率随光照时间的变化关系 .     

Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams

We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time‐of‐flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar₇₀₀ and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials. Copyright © 2009 John Wiley & Sons, Ltd.     

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma

A steady-state and high-flux helicon-wave excited N₂ plasma was used to oxynitride Si substrates for the synthesis of silicon oxynitride (SiON) films. X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) have been extensively used to characterize surface quality of the SiON films, and it is found that a large amount of nitrogen (N) can be incorporated into the films. The result of XPS depth profiles shows that the N concentration is high near the surface and the oxide/Si interface. In the UPS spectra, absence of the reappearance of surface states suggests a resistance to clustering of the oxynitride layer. The N₂ flux and Ar mixture quantity can facilitate tuning of the dissociation characteristics in N₂ discharge. By modulating the N₂ fractions, the N⁺ density reaches maximum at a N₂/(N₂ + Ar) flow-rate ratio of 0.5, resulting in incorporation of more N atoms into the SiON films. Considering the easy control of N₂ plasma, our work opens up a new avenue for achieving high-yield SiON films at low temperature.