氮化物抛物量子阱中磁极化子的能量

利用改进的Lee-Low-Pines(LLP)方法和变分法研究了在外磁场作用下氮化物无限抛物量子阱中自由极化子的能级,得到了极化子基态能量随量子阱阱宽和外磁场变化的规律,对GaN/Al_0.3Ga_0.7N抛物量子阱进行了数值计算.结果表明:外磁场对极化子的能量有明显的影响,极化子基态能量随阱宽的增强而减小,随磁场的增强而增大,并且电子-声子相互作用对氮化物量子阱中极化子能量的贡献是很大的.     

SO和LO声子对GaAs-Ga1-xAlxAs量子阱中激子束缚能的影响

本文考虑了电—声子耦合作用,应用么正变换方法计算了GaAs-Ga1-xAlxAs量子阱中的激子束缚能;得到了激子束缚能随阱宽变化的曲线。当考虑激子声子相互作用后,激子相对于电子极化子和空穴极化子的第一子带底的束缚能小于相应的裸激子的束缚能量。     

ZnSe/ZnS抛物量子阱中激子的极化子效应(英文)

采用推广的LLP方法研究了ZnSe/ZnS抛物量子阱中激子的极化子效应。考虑电子和空穴与LO声子的相互作用,得到了激子基态能量和结合能随阱宽的变化关系。结果表明,阱宽较小时,能量随着阱宽的增大而急剧减小;阱宽较大时,能量减小的比较缓慢。和我们以前的工作对比,我们发现ZnSe/ZnS抛物量子阱对激子的束缚强于GaAs/Ga1-xAlxAs抛物量子阱。     

温度和极化子效应对准二维强耦合激子基态的影响

采用Huybrechts线性组合算符和Lee-Low-Pines变换法研究了温度和极化子效应对量子阱中激子与界面光学声子强耦合又与体纵光学声子弱耦合体系基态的影响,推导出激子基态的诱生势和基态能量的移动的表达式. 以AgCl/AgBr量子阱为例进行了数值计算,结果表明,由激子-界面光学声子强耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而增大,而由激子-体纵光学声子弱耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而减小. 关键词： 量子阱 强耦合激子 极化子效应 温度依赖性     

晶格振动对激子运动的影响

在本文中用Haga研究极化子时提出的微扰法讨论晶格振动对激子运动的影响。把作者过去的工作推广到电子和空穴质量不相等的普遍情形。在忽略反冲效应中不同波矢的声子之间的相互作用时,导出了激子的基态能量、有效质量、约化质量和内部势能。指出:激子的有效质量和电子、空穴与声子的相互作用有关;激子的约化质量不仅和电子、空穴与声子的相互作用有关,而且还和电子空穴质量比有关;激子形成自陷态的条件并非由电子、空穴与声子相互作用的大小,而是由电子、空穴质量比决定。形成激子自陷的条件是电子、空穴质量比0.261<μ_e/μ_h<3.83。在μ_e/μ_h<0.261或μ_e/μ_h>3.83的情形,激子极化晶体中并不形成自陷态。 关键词：     

磁场对聚合物光电池中电流的影响

制备了结构为 ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al的聚合物光电池器件,并在不同偏压下,分别测量了器件的光电流和暗电流随外加磁场的变化. 发现随外加磁场增加,光电流增强,暗电流减弱. 从聚合物光电池中光电流和暗电流的产生机制出发,对该现象进行了解释,认为外加磁场可以有效改变单重态极化子对和三重态极化子对之间的相对比例,进而使自由载流子浓度增加. 光生自由载流子浓度增加是光生电流增强的原因,而自由载流子与三重态激子的相互作用导致了暗电流减弱. 开路电压附近,光电流随磁场增加而增强可以近似 关键词： 聚合物光电池 磁场效应 光生电流 极化子对     

极性晶体中慢激子极化势的性质

本文讨论极性晶体中慢激子极化势的性质,把作者过去的工作推广到电子和空穴质量不相等的情形。采用微扰法,在忽略反冲效应中不同波矢的声子之间的相互作用后,计算了二级近似的波函数。由此进一步计算了慢激子的极化电势,发现:激子的极化电势受到纵光学声子的屏蔽,其屏蔽长度与纵光学声子的频率、激子的质量的平方根成反比;极化电势和电子、空穴质量有关,在电子、空穴质量比等于1时最小。 关键词：     

GaAs抛物量子线中弱耦合极化子的磁场效应

应用变分法和改进的线性组合算符法,研究了磁场对抛物量子线中弱耦合极化子振动频率和相互作用能的影响.给出了GaAs抛物量子线中弱耦合极化子的振动频率和相互作用能与磁场和约束强度的依赖关系.对GaAs晶体作了数值计算,结果显示:极化子振动频率和相互作用能都随约束强度和外磁场的增加而增大.     

温度和极化子效应对准二维强耦合激子基态的影响

采用Huybrechts线性组合算符和Lee-Low-Pines变换法研究了温度和极化子效应对量子阱中激子与界面光学声子强耦合又与体纵光学声子弱耦合体系基态的影响，推导出激子基态的诱生势和基态能量的移动的表达式. 以AgCl/AgBr量子阱为例进行了数值计算，结果表明，由激子-界面光学声子强耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而增大，而由激子-体纵光学声子弱耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而减小.     

Rashba效应影响下量子点中弱耦合束缚极化子的性质

采用改进的线性组合算符和幺正变换的方法研究了Rashba效应影响下量子点中弱耦合束缚极化子的性质,导出了Rashba效应影响下量子点中弱耦合束缚极化子的振动频率、有效质量、基态分裂能和相互作用能。数值计算结果表明随Rashba自旋-轨道耦合常数的增加,由于声子作用产生的附加能量能对零磁场时自旋分裂能的影响占有绝对优势。库仑势对束缚极化子的基态能量的影响同时也占有绝对优势。所以,研究Rashba自旋轨道相互作时声子的影响不可忽略。     

Bound polaron in quantum dot quantum well structures

The problem of bound polarons in quantum dot quantum well (QDQW) structures is studied theoretically. The eigenfrequencies of bulk longitudinal optical (LO) and surface optical (SO) modes are derived in the framework of the dielectric continuum approximation. The electron--phonon interaction Hamiltonian for QDQW structures is obtained and the exchange interaction between impurity and LO-phonons is discussed. The binding energy and the trapping energy of the bound polaron in CdS/HgS QDQW structures are calculated. The numerical results reveal that there exist three branches of eigenfrequencies of surface optical vibration in the CdS/HgS QDQW structure. It is also shown that the binding energy and the trapping energy increase as the inner radius of the QDQW structure decreases, with the outer radius fixed, and the trapping energy takes a major part of the binding energy when the inner radius is very small.     

Stark Effect of Polarons in Parabolic Quantum Wells

We report the study of Stark effect of polarons in infinite parabolic quantum wells under an electric field, taking into account the effects of interaction with bulk LO-phonons. The electron-phonon interaction and the.effective mass in the plane perpendicular to the growth direction for excited states of free polarons have been calculated as functions of the degree of confinement. The general behavior of the excited states is found to be in agreement with previous works on the ground state. It is shown that in the limit of strong confinement the differences in electron-phonon interaction and effective mass between the ground state and excited states vanish. Although the applied electric field has no effect on the electronphonon interaction or the effective mass of a free polaron system, our numerical results for an AlGaAs parabolic quantum well have demonstrated its significance in determining the coupling of electrons with bulk LO-phonons of bound polaron systems.     

Optical and electronic properties of quantum dots with magnetic impurities

The article discusses some of the recent results on semiconductor quantum dots with magnetic impurities. A single Mn impurity incorporated in a quantum dot strongly changes the optical response of a quantum-dot system. A character of Mn-carrier interaction is very different for II-VI and III-V quantum dots (QDs). In the II-VI QDs, a Mn impurity influences mostly the spin-structure of an exciton. In the III-V dots, a spatial localization of hole by a Mn impurity can be very important, and ultimately yields a totally different spin structure. A Mn-doped QD with a variable number of mobile carriers represents an artificial magnetic atom. Due to the Mn-carrier interaction, the order of filling of electronic shells in the magnetic QDs can be very different to the case of the real atoms. The “periodic” table of the artificial magnetic atoms can be realized in voltage-tunable transistor structures. For the electron numbers corresponding to the regime of Hund's rule, the magnetic Mn-carrier coupling is especially strong and the magnetic-polaron states are very robust. Magnetic QD molecules are also very different to the real molecules. QD molecules can demonstrate spontaneous breaking of symmetry and phase transitions. Single QDs and QD molecules can be viewed as voltage-tunable nanoscale memory cells where information is stored in the form of robust magnetic-polaron states. To cite this article: A.O. Govorov, C. R. Physique 9 (2008).     

Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures

Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantum dot (QD) structures are investigated by optical orientation spectroscopy. An increase in the optical and spin polarization of the QDs is observed with increasing magnetic field in the range 0-2?T, and is attributed to suppression of exciton spin depolarization within the QDs that is promoted by the hyperfine interaction and anisotropic electron-hole exchange interaction. This leads to a corresponding enhancement in spin detection efficiency of the QDs by a factor of up to 2.5. At higher magnetic fields, when these spin depolarization processes are quenched, the electron spin polarization in anisotropic QD structures (such as double QDs that are preferably aligned along a specific crystallographic axis) still exhibits a rather strong field dependence under non-resonant excitation. In contrast, such a field dependence is practically absent in more 'isotropic' QD structures (e.g.?single QDs). We attribute the observed effect to stronger electron spin relaxation in the spin injectors (i.e.?wetting layer and GaAs barriers) of the lower-symmetry QD structures, which also explains the lower spin injection efficiency observed in these structures.     

极化子效应对ZnS/CdSe核壳量子点光吸收系数的影响

在有效质量近似下,利用量子力学密度矩阵理论,从理论上研究了考虑极化子效应后核壳量子点中线性、三阶非线性以及总的光吸收系数在不同条件下随入射光能量变化的关系。通过数值计算,分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe柱型核壳结构量子点光吸收系数的影响。结果表明,极化子效应对光吸收系数有很大影响,不同声子模式对光吸收系数影响大小不同。考虑电子-LO声子后,光吸收系数被大大提高。另外,入射光强和弛豫时间对系统的吸收系数也有很大影响。     

Microstructural and optical properties of multiple closely stacked InAs/GaAs self-assembled quantum dot arrays

The microstructural and the optical properties of multiple closely stacked InAs/GaAs quantum dot (QD) arrays were investigated by using atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The AFM and the TEM images showed that high-quality vertically stacked InAs QD self-assembled arrays were embedded in the GaAs barriers. The PL peak position corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E₁-HH₁) of the InAs/GaAs QDs shifted to higher energy with increasing GaAs spacer thickness. The activation energy of the electrons confined in the InAs QDs increased with decreasing with GaAs spacer thickness due to the coupling effect. The present results can help to improve the understanding of the microstructural and the optical in multiple closely stafcked InAs/GaAs QD arrays.     

Photoexcited electron and hole dynamics in semiconductor quantum dots: phonon-induced relaxation, dephasing, multiple exciton generation and recombination

Photoexcited dynamics of electrons and holes in semiconductor quantum dots (QD), including phonon-induced relaxation, multiple exciton generation, fission and recombination (MEG, MEF and MER), were simulated by combining ab?initio time-dependent density functional theory and non-adiabatic molecular dynamics. These nonequilibrium phenomena govern the optical properties and photoexcited dynamics of QDs, determining the branching between electronic processes and thermal energy losses. Our approach accounts for QD size and shape as well as defects, core-shell distribution, surface ligands and charge trapping, which significantly influence the properties of photoexcited QDs. The method creates an explicit time-domain representation of photoinduced processes and describes various kinetic regimes owing to the non-perturbative treatment of quantum dynamics. QDs of different sizes and materials, with and without ligands, are considered. The simulations provide direct evidence that the high-frequency ligand modes on the QD surface play a pivotal role in the electron-phonon relaxation, MEG, MEF and MER. The insights reported here suggest novel routes for controlling the photoinduced processes in semiconductor QDs and lead to new design principles for increasing the efficiencies of photovoltaic devices.     

Study of the Optical Properties of CdZnSe/ZnS-Quantum Dot–Au-Nanoparticle Complexes

The interaction of gold nanoparticles (NPs) and semiconductor alloyed CdZnSe/ZnS quantum dots (QDs) in colloidal solutions is studied. It is shown that the photoluminescence intensity of QDs in a mixture decreases compared to that in the initial QD solution, which is caused by resonance nonradiative energy transfer from QDs to Au NPs in spontaneously formed aggregates. To control the formation of pairs of interacting QDs and Au NPs, we proposed have a method for creating QD–Au NP complexes bound by special molecules—ligands. It is shown that the morphology and optical properties of the samples obtained depend on the method of their preparation, in particular, on the chemical environment of QDs. It is found that the complexes form in the case of addition of hydrophilic Au NPs to hydrophobic QDs and that this almost does not change the optical properties of the latter compared to those of quasi-isolated QDs in colloidal solution.     

Manufacturing of Volumetric Glass–Based Composites with Single‐ and Double‐QD Doping

Quantum dot (QD)‐based light‐emitting materials are gaining increased attention because of their easily tunable optical properties desired for various applications in biology, optoelectronics, and photonics. However, few methods can be used to manufacture volumetric materials doped with more than one type of QD other than QD‐polymer hybrids, and they often require complicated preparation processes and are prone to luminescence quenching by QD aggregation and separation from the matrix. Here, simultaneous doping of a volumetric glass‐based nanocomposite with two types of QDs is demonstrated for the first time in a single‐step process using the nanoparticle direct doping method. Glass rods doped with CdTe, CdSe/ZnS, or co‐doped with both QDs, are obtained. Photoluminescence and lifetime experiments confirm temperature‐dependent double emission with maxima at 596 and 720 nm with mean lifetimes up to 16 ns, as well as radiative energy transfer from the short wavelength–emitting QDs to the long wavelength–emitting QDs. This approach may enable the simple and cost‐efficient manufacturing of bulk materials that produce multicolor luminescence with cascade excitation pumping. Applications that could benefit from this include broadband optical fiber amplifiers, backlight systems in LCD screens, high‐power LEDs, or down‐converting solar concentrators used to increase the efficiency of solar panels.     

Numerical simulation of a coupling effect on electronic states in quantum dots

Lasers operating at 1.3 μm have attracted considerable attention owing to their potential to provide efficient light sources for next-generation high-speed communication systems. InAs/GaAs quantum dots (QDs) were pointed out as a reliable low-cost way to attain this goal. However, due to the lattice mismatch, the accumulation of strain by stacking the QDs can cause dislocations that significantly degrade the performance of the lasers. In order to reduce this strain, a promising method is the use of InAs QDs embedded in InGaAs layers. The capping of the QD layer with InGaAs is able to tune the emission toward longer and controllable wave-lengths between 1.1 and 1.5 μm. In this work, using the effective-mass envelope-function theory, we investigated theoretically the optical properties of coupled InAs/GaAs strained QDs based structures emitting around 1.33 μm. The calculation was performed by the resolution of the 3D Schrödinger equation. The energy levels of confined carriers and the optical transition energy have been investigated. The oscillator strengths of this transition have been studied with and without taking into account the strain effect in the calculations. The information derived from the present study shows that the InGaAs capping layer may have profound consequences as regards the performance of an InAs/GaAs QD based laser. Based on the present results, we hope that the present work make a contribution to experimental studies of InAs/GaAs QD based structures, namely the optoelectronic applications concerning infrared and mid-infrared spectral regions as well as the solar cells.