AgGa_(1-x)In_xSe_2晶体的定向加工

报道了一种AgGa1-xInxSe2晶体定向加工的新方法,即根据AgGa1-xInxSe2晶体自身解理面,结合晶体标准极图和X射线衍射仪,快速寻找AgGa1-xInxSe2晶体通光面并进行回摆精修的器件加工新方法。运用该方法,针对改进垂直Bridgman法自发成核生长的AgGa1-xInxSe2(x=0.2)晶体,经定向切割、研磨和抛光,初步加工出AgGa1-xInxSe2(x=0.2)晶体光参量振荡(OPO)器件,其相位匹配角θm=54.71°、方位角φ=45°,元件尺寸达8mm×8mm×18mm。新方法不仅定向准确、操作简便,而且可以应用于不同In含量的系列AgGa1-xInxSe2晶体定向加工。     

AgGa1-xInxSe2单晶的生长研究

采用高纯(99.9999;)Ag、Ga、In和Se单质为原料,按化学计量比富Se0.3～0.5;配料,通过机械振荡和温度振荡相结合的方法合成出单相高致密AgGa1-xInxSe2多晶材料.以此为原料采用布里奇曼法生长出外观完整的尺寸为φ15mm×25mm的AgGa1-xInxSe2单晶锭(x=0.2).沿自然显露面对晶体进行了解理和X射线衍射分析,发现该面是(101)面.同时进行了红外透过率测试,其红外透过率为41;.     

红外非线性晶体材料AgGa1-xInxSe2的生长和性能表征

AgGa1-xInxSe2是近几年来研制的新型红外非线性光学晶体材料,其主要特点是借着Ga和In含量,即x值的变化,改变材料的折射率、双折射,实现三波共线非线性作用的非临界(90°)相位匹配.我们用垂直布里奇曼法生长单晶,获得了φ35mm×50mm的AgGa1-xInxSe2单晶棒.对生长出晶体棒In的浓度分布进行了测试.晶体元件用红外观察镜和分光光度计分别进行了观察和测试,晶体透光率良好.用一台TEA CO2激光泵浦一块5×6×16mm3的AgGa1-xInxSe2(x=0.3234)晶体元件,成功地实现了10.6μm非临界相位匹配倍频,输出5.3μm的中红外激光.     

中远红外非线性光学晶体AgGaS2、AgGaSe2和AgGa1-xInxSe2研究进展

综合报道了本实验室关于黄铜矿类I-III-VI2型系列晶体的研究进展。采用两温区气相输运温度振荡法合成出高纯、单相、致密的多晶材料,在三温区立式炉中用坩埚旋转下降法生长出AgGaS2、AgGaSe2和AgGa1-xInxSe2等系列单晶体,X射线单晶衍射谱和回摆谱表明晶体的结晶性好,结构完整;红外透过率接近理论值,吸收系数低于0.017 cm-1,表明生长的晶体光学质量高。研究出一种新的能对AgGa1-xInxSe2晶体(112)晶面进行择优腐蚀的腐蚀剂:(30 g CrO3+10 mL H2O)∶H4PO4(85%)∶HNO3(65～68%)∶HF(40%)=10∶10∶10∶2(体积比),在60℃下腐蚀40 min,能够清晰地显示出AgGa1-xInxSe2晶体(112)面取向一致的三角形腐蚀坑,边界清晰,蚀坑密度大约为105/cm2数量级。采用自行研制的晶体定向切割新方法,加工出AgGa1-xInxSe2-OPO器件,获得了3～5μm的激光输出,光-光转换效率达21%。     

AgGa1-xInxSe2晶体热处理研究

结合差示扫描量热曲线(DSC)和相图确定出热处理的温度范围.分别在真空和AgGa1-xInxSe2(x=0.2,0.6,0.8)多晶粉末包埋下,对ASGa0.4In0.6Se2晶体进行了热处理实验,分析了热处理对晶体性能的影响.结果表明:用x=0.6和0.8的多晶粉末包埋,在680℃下保温120 h后再淬火处理的晶片,其红外透过率在550～5500 cm-1波数范围内整体提高到65;以上,光学质量显著提高;EDX和XRD分析表明,采用AgGa0.2In0.8Se2多晶粉末包埋,能够补充晶片中的In缺失,成分更接近AgGa0.4In0.6Se2化学计量比,同时晶片结晶质量也得到明显改善.     

新型AgGa1-xInxSe2晶体用于CO2激光倍频研究

本实验室用布里奇曼方法成功生长出有应用前景的新型四元非线性AgGa1-xInxSe2晶体,对晶体光学透过,红外低倍显微成像,反射损耗和吸收系数进行了研究和计算.基于纯AgGaSe2和AgInSe2的Sellmeier方程,用线性内插方法计算了不同In含量的AgGa1-xInxSe2在0.9～19μm的Sellmeier色散系数并建立了Sellmeier方程.计算和描绘了Ⅰ型相位匹配CO2激光二次谐波产生的调谐曲线,并标出我们的倍频实验数据.在近似非临界相位匹配条件下,进行了TEA CO2激光10.6μm在AgGa1-xInxSe2中的倍频实验研究,并与AgGaSe2进行了比较,测量的1#AgGa1-xInxSe2相位匹配角θ及相位匹配接收外角△θext·L分别为88.2°和7.7°·cm,AgGa1-xInxSe2的倍频效率比AgGaSe2高出近3倍.     

超快闪烁晶体碘化亚铜的生长研究

在氮气保护的条件下,采用恒温蒸发法,在乙腈溶液中生长超快闪烁晶体碘化亚铜,获得了尺寸为3 mm×2 mm×2 mm的单晶体.测定了CuI在乙腈中的溶解度曲线和结晶度曲线.利用紫外-可见光谱对CuI的乙腈溶液中的碘离子存在形式作了判断和分析,对溶液中的黑色沉淀物氧化铜进行了IR和XRD表征.通过结晶实验,研究了温度、氧气和还原剂对晶体结晶形态的影响.实验表明:晶体生长温度应在45 ℃以上,铜粉具有很好的还原性能.     

AgGa1-xInxSe2晶体退火改性研究

采用改进布里奇曼法生长出外观完整的AgGa1-xInxSe2(x=0.2)单晶锭,晶体的红外透过率低,不能直接用于红外非线性光学器件制备.采用TA公司生产的SDTQ-600热分析仪进行DSC-TGA测试,发现其熔点为826.69℃,结晶点为750.86℃,总失重约为3.9217;.采用同成份粉末源包裹晶体,在抽空封结后进行退火处理.退火处理后晶体的红外透过率有明显改善.在4000cm-1～7000cm-1范围内红外透过率由原先低于25;改进到高于40;;在750cm-1～4000cm-1范围的红外透过率由原先低于45;改善到超过50;,在2000cm-1 ～750cm-1区域甚至高达60;.结果表明:采用同成分粉末源包裹,在抽空封结后退火处理能有效提高AgGa1-xInxSe2晶体的红外透过率,改善晶体的光学均匀性,退火后的晶体适合红外非线性光学器件制备.     

AgGaS2晶体生长裂纹研究

从理论和实验上对AgGaS2晶体生长中易产生裂纹甚至开裂的现象与其热应力、晶体尺寸以及温度梯度、生长速率等生长参数之间的关系进行了研究.结果表明:晶体产生裂纹甚至开裂与生长速率、坩埚旋转速率、冷却速率所造成的热应力和热应变有关.采用改进的Bridgman法成功地生长出尺寸为φ12mm×30mm无裂纹的AgGaS2单晶体,给出了制备无裂纹、大尺寸AgGaS2晶体的较佳生长工艺参数.     

改进布里奇曼法生长HgCdTe晶体的生长速度对固液界面形态的影响

为选择合理的晶体生长速度,在用改进Bridgman法生长直径为φ19mm的HgCdTe(x=0.21)晶体过程中,对正在生长的单晶体及熔体进行淬火,以观察其固液界面形态.初步的实验结果表明:在2mm/d及9mm/d的两种生长速度条件下,石英安瓶中的固液界面形态均为凹形抛物面,但其凹陷深度分别为10mm和14mm.较低的晶体生长速度条件下,凹陷深度较小,固液界面形态较平.由实验和讨论得知,宜选择较低的晶体生长速度用改进Bridgman法生长HgCdTe晶体.     

Crystallization rate control for alkali halide crystal growth by the VGF technique with a skull layer

This study describes the ability to use the melt‐level control for stabilization of the crystallization rate during NaI crystal growth by the VGF technique with a skull layer. It is shown that a conventional linear decrease of the heater temperature leads to a nonuniform crystallization rate and deterioration of crystal quality. A method and algorithm of temperature control for the stabilization of the crystallization rate during crystal growth is proposed. The series of growth experiments with NaI(Tl) crystals proved the efficiency of this approach and ability to obtain scintillators with high registration efficiency, about 6.3% energy resolution for a ¹³⁷Cs (662 keV) source.     

Self-assembly of apoferritin molecules into crystals: thermodynamics and kinetics of molecular level processes

Aside from the biological, biomedical and materials importance of ferritin and apoferritin, the self-assembly of these molecules into crystals is of interest because it is a suitable model for protein crystallization and aggregation that impact many fundamental and applied fields. We use the atomic force microscope in-situ, during the crystallization of apoferritin to visualize and quantify at the molecular level the processes responsible for crystal growth. We image the configuration of the incorporation sites, “kinks”, on the surface of a growing crystal. We show that the kinks are due to thermal fluctuations of the molecules at the crystal-solution interface. This allows evaluation of the free energy of the intermolecular bond φ = 3.0 k_BT = 7.3 kJ/mol. The crystallization free energy, extracted from the protein solubility, is − 42 kJ/mol. Thermodynamics analyses based on these two values suggest that the main component in the crystallization driving force is the entropy gain of the waters bound to the protein molecules in solution and released upon crystallization. Furthermore, we determine the characteristic frequency of attachment of individual molecules into the kinks at one set of conditions. We show that the macroscopic step growth velocity, scaled by the molecular size, equals the product of independently determined kink density and attachment frequency, i.e., these are the molecular-level parameters for crystallization. Finally, we show that although new crystal layers are generated by intrinsically stochastic surface nucleation, for crystals > 200 μm layer generation predominantly occurs at the crystal edges. Numerical simulations of the concentration fields in the solution allow us to assign this localization to higher interfacial concentration at the edges. As the steps propagate to cover the crystal face, step density waves, or bunches, develop and may lead to non-uniformity and lower quality and utility of the growing crystal.     

定位硅酸锌结晶釉析晶动力学研究

本文利用定位结晶法研究了氧化锌和硅酸锌两种晶种对硅酸锌结晶釉釉面晶花的影响,根据结晶动力学理论,对结晶釉中硅酸锌晶体的生长规律和结晶机理进行了探讨,并比较了不同晶种对硅酸锌晶体生长规律的影响.实验结果表明:采用氧化锌和硅酸锌作定位晶种的釉面晶花外观效果基本相同;釉熔体中硅酸锌晶体生长半径与保温时间成线性关系;不同的定位晶种对硅酸锌晶体的生长基本没有影响;结晶常数随着析晶保温温度的提高而增加,当析晶保温温度分别为1150 ℃,1100 ℃和1050 ℃时,所对应的结晶常数依次为1.0911,0.9996和0.7177;即使在同一析晶保温温度下,不同的保温时间段其结晶常数也不同.     

Study on crystallization kinetics and the crystal internal defects of HMX

In this paper, the solubility data of HMX (1,3,5,7‐tetranitro‐1,3,5,7‐tetrazocane) in acetone from 323.15 K to 293.15 K were accurately measured by use of the laser‐monitoring observation technique. Intermittent dynamic method was utilized to study crystallization kinetics of HMX in acetone. The data of crystallization kinetics were obtained by moment analysis, and the parameters of the growth rate and nucleation rate equations were derived by using multiple linear least squares method. Subsequently, growth rate and nucleation rate at different conditions were calculated according to these equations. In addition, Optical Microscopy Images (qualitative) and Particle Apparent Density (quantitative) experiments were applied to study the crystal internal defects of HMX under different crystallization conditions. It can be found that the crystal apparent density of HMX is in the range of 1.8993 g·cm⁻³ to 1.9017 g·cm⁻³, very close to the theory density of HMX; the internal defects and the crystal size do not increase after 25 °C, from which we predict that the HMX crystal growth reaches the steady growth segment. These results suggest that the nucleation rate is a significant factor influencing the crystal internal defects, and larger nucleation kinetics can reduce crystal internal defects.     

In situ study of the growth and degradation processes in tetragonal lysozyme crystals on a silicon substrate by high-resolution X-ray diffractometry

The results of an in situ study of the growth of tetragonal lysozyme crystals by high-resolution X-ray diffractometry are considered. The crystals are grown by the sitting-drop method on crystalline silicon substrates of different types: both on smooth substrates and substrates with artificial surface-relief structures using graphoepitaxy. The crystals are grown in a special hermetically closed crystallization cell, which enables one to obtain images with an optical microscope and perform in situ X-ray diffraction studies in the course of crystal growth. Measurements for lysozyme crystals were carried out in different stages of the crystallization process, including crystal nucleation and growth, developed crystals, the degradation of the crystal structure, and complete destruction.     

Surface crystallization of rare-earth aluminosilicate glasses

Surface crystallization in a rare-earth aluminosilicate glass (Nd₂O₃–Al₂O₃–SiO₂–TiO₂) was studied using an isothermal method and the crystal growth rate of the glasses was evaluated as a function of the composition. For measuring the surface crystal growth rate, two different methods: measurement of the crystal layer in the longitudinal and lateral growth direction. It was found that crystallization proceeded by surface crystallization only and TiO₂ did not act as a nucleating agent. The growth rate was strongly dependent on the viscosity of glass and agreed with prediction from the Preston model using the known viscosity and melting temperature. As the Si/Nd and Si/Al ratios decreased, the crystal growth rate increased. TiO₂ and Nd₂O₃ played the role of network modifier, which decreased the viscosity of the glass, facilitating crystallization of the rare-earth aluminosilicate glass.     

微波辅助水热合成条件对直接合成纳米HZSM-5晶体性质的影响

利用微波辅助水热合成法直接制备了纳米HZSM-5晶体.采用XRD、FT-IR、SEM、BET和NH3-TPD等手段对合成样品进行了分析表征,研究了晶化温度和时间对合成产物晶体性质的影响.结果表明,晶化温度和时间对微波辅助水热直接合成产物微观形貌、晶粒尺寸和分散度影响明显.较低的晶化温度和较短的晶化时间均难以形成形貌规则的HZSM-5晶体.随着晶化温度的升高,合成样品逐渐变为球形晶粒、晶粒尺寸逐渐增大、分散度逐渐提高,继续提高晶化温度达180 ℃时,晶粒长大使比表面积稍有降低;随着晶化时间的延长,样品的微孔和介孔增多,比表面积和孔容逐渐增大,继续延长晶化时间,晶体内微孔可能的收缩和晶粒的长大使得样品孔容和比表面积减小.160 ℃和1.5 h条件下制备的HZSM-5分子筛晶体形貌呈球形,晶粒尺寸约为60 nm,分散程度较好;其比表面积、孔容和平均孔径分别为398.45 m2·g-1、0.63 cm3·g-1和6.27 nm;晶体表面具有弱酸特征.     

Water concentration profile in silica glasses during surface crystallization

Water concentration profiles in silica glasses during surface crystallization at 1400°C in air were determined by IR spectroscopy with a microscope attachment. Three types of silica glasses with different water contents were examined. Some glass samples initially experienced hydration or dehydration depending upon the original water content. During crystallization, water concentration was highest at the crystal–glass interface and decreased with depth from the interface. Furthermore, water concentration at the interface increased with increasing heat-treatment time for crystallization. The observed water concentration profiles were consistent with the theoretical prediction by Smoluchowski based upon water diffusion modified by water expulsion from the crystal phase. A time-dependent crystal growth rate was also observed for some samples and this behavior appears related to the variation of water content in glasses.     

Crystallization kinetics of electro-deposited amorphous CoP alloys

The crystallization characteristics of amorphous Co-15.2 at.% P and Co-18.4 at.% P alloys were studied by means of a differential scanning calorimeter (DSC) and a transmission electron microscope (TEM). The analysis of DSC data obtained in the isothermal operation was performed by means of the Johnson-Mehl-Avrami (J-M-A) rate equation. The values of the J-M-A time index, n, for the crystallization of Co-15.2 at.% P and Co-18.4 at.% P alloys were 3.3 ± 0.1 and 2.2±0.1, respectively. It has been revealed through these experimental results and TEM observation during the crystallization process of the amorphous alloys that the crystallization of the former alloy results in interface-controlled three-dimensional spherical growth (n = 3) of Co₂P crystal, whereas the crystallization of the latter alloy results in two-dimensional growth (n = 2) of Co₂P disks having constant thickness. It has also been found that the apparent activation energy for the crystallization is 195 kJ/mol. and 190 kJ/mol. for Co-15.2 at.% P and Co-18.4 at.% P alloys, respectively.     

Growth and characterization of KY(WO4)2 crystals

Single-crystal growth of KY(WO₄)₂ (KYW) by top-seeded solution growth technique has been investigated. The effects of seed orientation, temperature gradient experienced by the growing crystal and rate of crystallization on crystal quality are reported. The best results are obtained when the growth is seeded along the 0 1 0 direction. Minute deviations from this growth direction are found to be detrimental to crystal perfection. The differential thermal analysis shows that the amount of super-cooling required for dissolution and crystallization of KYW in the flux is only 5° and this promotes an easy formation of tiny crystallites in the solution. Consequently, the crystal rotation and the solution cooling rates are found to have pronounced effects on the growth of KYW crystal.