NiFe/Pt薄膜中角度相关的逆自旋霍尔效应

NiFe/Pt双层薄膜样品在铁磁共振时, NiFe磁矩进动所产生的自旋流注入到Pt层中, 由于逆自旋霍尔效应产生直流电压V_ISHE, 此电压会叠加到NiFe薄膜由于自旋整流效应而产生的电压V_SRE 上, 实验测量所得电压为V_ISHE和V_SRE的叠加. 为了区分这两种不同机理对电压的贡献, 本文采取旋转外加静磁场的方法, 通过分析所测电压随磁场角度的变化从而分离出V_ISHE 的大小. 研究结果表明, 相比于单层NiFe(20 nm)薄膜样品, NiFe(20 nm)/Pt(10 nm)双层膜样品中由于NiFe自旋注入到Pt 中导致铁磁共振线宽增加. 与逆自旋霍尔效应产生的电压相比, 自旋整流效应的贡献较小, 但不可忽略. 本文工作有助于认清铁磁/非磁性金属材料中的自旋相关效应, 并提供了一种准确的分析逆自旋霍尔效应的方法.     

Temperature dependence of spin pumping in YIG/NiOx/W multilayer

We report the temperature dependence of the spin pumping effect for Y₃Fe₅O₁₂ (YIG, 0.9 μm)/NiO (t_NiO)/W (6 nm) (t_NiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal I_c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I_c with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (t_NiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I_c of YIG/NiO/W exhibits a maximum near the T_N of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.     

Abnormal spin-pumping effect at Pt/NiFe interface by an oxidation of ferromagnet

The Inverse Spin Hall Effect (ISHE) voltage induced by spin-pumping was measured in Pt/[nonoxidized or oxidized NiFe] samples. The spectrum shape of the DC voltage signal was well-reproduced by simple Lorentzian functions, which were consistent with the prediction of ISHE in Pt/nonoxidized NiFe sample. On the other hand, the voltage signal from the Pt/oxidized NiFe was significantly decreased in accordance with abnormal ferromagnetic resonance (FMR) behavior. The origin of the ISHE voltage degradation was investigated by the FMR spectrum and X-ray photoelectron spectroscopy (XPS) analyses. The spin-pumping was suppressed by the oxidation of NiFe layer and deficient Pt/NiFe interface. The well-defined ferromagnet and clear interface with a normal spin mixing conductance were experimentally demonstrated to be reasonable spin-pumping.     

Control of spin waves in a thin film ferromagnetic insulator through interfacial spin scattering

Control of spin waves in a ferrite thin film via interfacial spin scattering was demonstrated. The experiments used a 4.6 μm-thick yttrium iron garnet (YIG) film strip with a 20-nm thick Pt capping layer. A dc current pulse was applied to the Pt layer and produced a spin current across the Pt thickness. As the spin current scatters off the YIG surface, it can either amplify or attenuate spin-wave pulses that travel in the YIG strip, depending on the current or field configuration. The spin scattering also affects the saturation behavior of high-power spin waves.     

自旋霍尔纳米振荡器的非线性动力学及其应用

自旋霍尔纳米振荡器利用电流产生的自旋轨道力矩驱动磁性薄膜中磁矩进行高频进动，能在微纳尺度下实现全电学调控的相干自旋波和微波信号，是一类新型的纳米自旋电子学器件，在信息存储、处理和通信方面具有广泛的应用前景。基于强自旋轨道矩效应，人们近期在各类铁 磁/非磁重金属构成的双层薄膜结构中，已实现了多种不同自旋波模式的电学激发和调控，并对 其复杂的非线性动力学特性进行了深入的探究。基于这些前期的研究结果与最新的进展，我们在 本综述中对“对三角”结构的纳米间隙型、“蝴蝶结”型、纳米线型、垂直纳米点接触型以及阵 列等具有各类器件结构的自旋霍尔纳米振荡器所体现出来的丰富非线性动力学特性进行了详细讨 论与归纳，并对其在新型低能耗量子磁振子自旋器件和非冯诺依曼架构的自旋型人工神经网络计 算方面的潜在应用也进行了探讨。     

Electric manipulation of spin relaxation using the spin Hall effect

Using the spin Hall effect, magnetization relaxation in a Ni_{81}Fe_{19}/Pt film is manipulated electrically. An electric current applied to the Pt layer exerts spin torque on the entire magnetization of the Ni81Fe19 layer via the macroscopic spin transfer induced by the spin Hall effect and modulates the magnetization relaxation in the Ni81Fe19 layer. This method allows us to tune the magnetization dynamics regardless of the film size without applying electric currents directly to the magnetic layer.     

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

自旋轨道矩调控的垂直磁各向异性四态存储器结构

利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响,构想并验证了一种四态存储器单元.存储器器件包含两个区域,其中一区域的钴铂多层膜[Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)]直接生长在热氧化硅衬底上,另一个区域在磁性膜和衬底之间沉积了一层氧化钽作为缓冲层[TaO x(0.3 nm)/Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)],缓冲层导致两个区域的垂直磁各向异性不同.在固定的水平磁场下对器件施加与磁场同向的电流,由于电流引起的自旋轨道耦合力矩,两个区域的磁化取向均会发生翻转,且拥有不同的临界翻转电流.改变通过器件导电通道的电流脉冲形式,器件的磁化状态可以在4个态之间切换.本文器件的结构为设计自旋轨道矩存储器件提供了新的思路.     

The observation of inherent spin Seebeck effect in Rh/YIG hybrid structure

Rhodium (Rh) is a 4d metal possessing a large spin orbit coupling strength and spin-Hall conductivity with a very small magnetic susceptibility, implying an insignificant magnetic proximity effect (MPE). We report here the observation of longitudinal spin Seebeck effect (LSSE) using Rh as a normal metal. A Rh film was sputtered on nanometer thick YIG films of highly crystalline nature and extremely low magnetic damping to obtain Rh/YIG hybrid structure. A clear thermal voltage V_th (SSE voltage) was obtained when a temperature gradient was applied on the Rh/YIG hybrid. The Rh film showed a very weak anomalous Hall resistance and the magneto-resistive testing clearly ruled out the magnetization of the Rh films via MPE. The anisotropic magnetoresistance (AMR) revealed a clear spin hall magnetoresistance (SMR) signal in Rh film implying a purely intrinsic spin current generation, free from any parasitic magnetic effects. The work can open a new window in the study of pure and uncontaminated spin current, generated in ferromagnetic insulators, using Rh as spin current detector.     

RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers

We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films.The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness.According to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of PMA.The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be modified.Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.     

Study on the Gilbert damping of polycrystalline YIG films with different capping layers

This paper describes the effect of 5-nm thick platinum (Pt), aluminum (Al) and silicon oxide (SiO_x) capping layers on the static and dynamic magnetic properties of 400-nm thick polycrystalline YIG films deposited on a Pt buffer layer. Both static and dynamic magnetic properties of Pt capped YIG film are totally different among all YIG films. Namely, the squareness of the magnetization curve for Pt capped YIG film increases, indicating that Pt capped YIG film is magnetically softer than other YIG films. Interestingly, the effective Gilbert damping parameter of Pt capped YIG films is about four times as large as those of other YIG films, and its value is approximately 9.52 × 10⁻⁴. However, the value of Gilbert damping is 2.55 × 10⁻⁴, 3.46 × 10⁻⁴ and 3.85 × 10⁻⁴ respectively for no capping, SiOx capping and Al capping samples respectively. This huge change in Gilbert damping parameter is mainly originating from the spin pumping effect, which arises at the interface of a material having strong spin orbit interaction such as Pt. Moreover, the enourmous increase in the value of effective anisotropic field and decrese in effective saturation magnetization indicates interface anisotropy is induced in Pt capped sample. These results suggest that the static and dynamic magnetic properties of YIG film can be controlled by selecting an appropriate capping layer.     

铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.     

Influence of thickness on current-induced magnetization switching in L1_0-FePt single layer

The thickness dependent spin–orbit torque(SOT) in an L1_0-Fe Pt single layer is investigated in this work. As the thickness increases from 8 nm to 16 nm, the magnetization switching ratio in the L1_0-Fe Pt film with higher chemical ordering becomes smaller. It is noted that compared with 3-nm-thick L1_0-Fe Pt film, 8-nm-thick L1_0-Fe Pt film can switch much magnetization with the increase of chemical ordering. When the Fe Pt film is thick enough, the SOT in Fe Pt is closely related to the L1_0-ordered structure, which indicates a bulk nature. Therefore, the disordering plays an important role in the magnetization switching only for the ultra-thin Fe Pt films, while the structural gradient may play an important role for thicker films. However, both of the two mechanisms cannot fully explain the process of magnetization switching and the spin current generation. Although many factors influence SOT, here in this work we emphasize only the bulk nature of strong SOC in L1_0-Fe Pt through density functional theory calculations, which should generate large spin current due to spin Hall effect.     

垂直各向异性Ho3Fe5O12薄膜的外延生长与其异质结构的自旋输运

垂直磁各向异性稀土-铁-石榴石纳米薄膜在自旋电子学中具有重要应用前景.本文使用溅射方法在(111)取向掺杂钇钪的钆镓石榴石(Gd_0.63Y_2.37Sc₂Ga₃O₁₂,GYSGG)单晶衬底上外延生长了2—100 nm厚的钬铁石榴石(Ho₃Fe₅O₁₂,HoIG)薄膜,并进一步在HoIG上沉积了3 nm Pt薄膜.测量了室温下HoIG的磁各向异性和HoIG/Pt异质结构的自旋相关输运性质.结果显示,厚度薄至2 nm的HoIG薄膜(小于2个单胞层)在室温仍具有铁磁性,且由于外延应变,2—60 nm厚HoIG薄膜都具有很强的垂直磁各向异性,有效垂直各向异性场最大达350 mT;异质结构样品表现出非常可观的反常霍尔效应和“自旋霍尔/各向异性”磁电阻效应,前者在HoIG厚度小于4 nm时开始缓慢下降,而后者当HoIG厚度小于7 nm时急剧减小,说明相较于反常霍尔效应,磁电阻效应对HoIG的体磁性相对更加敏感;此外,自旋相关热电压随HoIG厚度减薄在整个厚度范围以指数方式下降,说明遵从热激化磁振子运动规律的自旋塞贝克效应是其主要贡献者.本文结果表明HoIG纳米薄膜具有可调控的垂直磁各向异性,厚度大于4 nm的HoIG/Pt异质结构具有高效的自旋界面交换作用,是自旋电子学应用发展的一个重要候选材料.     

铁磁/重金属双层薄膜结构中磁性状态的稳定性分析

本文在理论上研究了铁磁/重金属双层薄膜结构中自旋霍尔效应自旋矩驱动的磁动力学. 通过线性稳定性分析, 获得了以电流和磁场为控制参数的磁性状态相图. 发现通过调节电流密度和外磁场, 可以获得不同的磁性状态, 例如: 平面内的进动态、平面内的稳定态以及双稳态. 当外磁场的方向在一定的范围时, 通过调节电流密度可以实现磁矩的翻转和进动. 同时, 通过数值求解微分方程, 给出了这些磁性状态磁矩的演化轨迹.     

The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy

Yttrium iron garnet (YIG) films possessing both perpendicular magnetic anisotropy (PMA) and low damping would serve as ideal candidates for high-speed energy-efficient spintronic and magnonic devices. However, it is still challenging to achieve PMA in YIG films thicker than 20 nm, which is a major bottleneck for their development. In this work, we demonstrate that this problem can be solved by using substrates with moderate lattice mismatch with YIG so as to suppress the excessive strain-induced stress release as increasing the YIG thickness. After carefully optimizing the growth and annealing conditions, we have achieved out-of-plane spontaneous magnetization in YIG films grown on sGGG substrates, even when they are as thick as 50 nm. Furthermore, ferromagnetic resonance and spin pumping induced inverse spin Hall effect measurements further verify the good spin transparency at the surface of our YIG films.     

电流调控磁涡旋的极性和旋性

提出了一种特殊自旋阀结构, 其极化层(钉扎层)磁矩沿面内方向, 自由层磁矩成磁涡旋结构. 自由层在形状上设计成左右两边厚度不同的阶梯形圆盘. 微磁学模拟研究发现, 通过调控所施加的高斯型脉冲电流的大小、方向和脉冲宽度, 可以实现磁涡旋的不同旋性、不同极性的组态控制. 分析了该结构中电流调控磁涡旋旋性和极性的物理原因和微观机理.     

基于IrMn/Fe/Pt交换偏置结构的无场自旋太赫兹源

与目前商用的太赫兹源相比,自旋太赫兹源具有超宽频谱、固态稳定以及成本低廉等优点,这使其成为下一代太赫兹源的主要研究焦点.但使用自旋太赫兹源时,通常需要外加磁场使铁磁层的磁化强度饱和,才能产生太赫兹波,这制约了其应用前景.基于此,本文制备了一种基于Ir Mn/Fe/Pt交换偏置结构的自旋太赫兹波发生器,通过Ir Mn/Fe中的交换偏置场和Fe/Pt中的超快自旋流注入与逆自旋霍尔效应相结合,在无外加磁场下产生了强度可观的太赫兹波.在Ir Mn和Fe的界面中插入超薄的Cu,可以使Fe在厚度很薄时零场下实现饱和磁化,并且其正向饱和场最高可达–10 m T,从而进一步提升无场下的太赫兹发射效率.零场下出射的太赫兹波的动态范围超过60 d B,达到可实用化的水平.通过旋转样品,发现产生的太赫兹波的偏振方向也会随之旋转,并且始终沿着面内垂直于交换偏置场的方向.此外,在此交换偏置结构的基础上,引入了一层自由的铁磁金属层Fe,设计了一种以Ir Mn/Fe/Pt/Fe为核心结构的自旋阀太赫兹源,发现产生的太赫兹强度在两层铁磁层反平行排列时比平行排列以及不引入自由铁磁金属层时均大约提升了40%.结果表明,基...     

Direct detection of nonlinear ferromagnetic resonance in thin films by the magneto-optical Kerr effect

The longitudinal magneto-optical Kerr effect is used to obtain a calibrated measure of the dynamic magnetization response over the ferromagnetic resonance (FMR) profile for in-plane magnetized Permalloy films excited with high power in-plane transverse microwave fields at 1.25 to 3.75 GHz and in-plane precession angles up to about 20 degrees. The data provide a profound demonstration of the Suhl threshold effect for parametric spin wave generation for angles above about 14 degrees, the magnetization precession lock-up just above threshold, and the complicated response over the full FMR profile at very high powers.