钛酸镧薄膜在1064nm/532nm波长激光辐照下的光学特性

采用热蒸发沉积技术制备了钛酸镧(H4)薄膜,研究了1 064nm和532nm波长激光诱导辐照处理后的薄膜折射率、消光系数、激光损伤阈值和损伤过程变迁.结果表明:采用不同波长的激光辐照H4薄膜后,会使其折射率升高,但升高的幅度不大.用1 064nm的激光辐照处理,可将H4膜的激光损伤阈值从10.2J/cm~2提高到15.7J/cm~2(5脉冲辐照),而532nm激光辐照对样品损伤阈值的提高效果不明显.同一样片,1 064nm激光的损伤阈值远远高于532nm的激光损伤阈值.1064nm激光辐照下,H4薄膜经历了轻微损伤、轻度损伤、重度损伤和极度损伤四个缓慢演变的阶段.而532nm激光辐照下,H4薄膜从未损伤到损伤是一个突变的过程,经历了重度损伤和极度损伤的演变阶段.     

1 064 nm高反射薄膜激光损伤阈值测量方法

 参照国际上对激光损伤阈值不同测量技术建立起来的相应检测规范和标准,分别采用1-on-1,S-on-1,R-on-1和光栅扫描共4种测量方式,在1 064 nm波长下对HfO₂/SiO₂周期性高反射薄膜进行了激光损伤阈值的测量研究。根据测量结果,比较并分析了这4种测量方式之间的差异,重点研究了R-on-1和光栅扫描测量方式中存在的激光预处理效应对薄膜损伤阈值的影响,以及辐照激光光斑尺寸与损伤阈值之间的联系,并讨论了光栅扫描方式中预处理效应与扫描间距和扫描能量密度梯度的关系。研究表明：R-on-1方式下测得的损伤阈值最高,光栅扫描和1-on-1次之,S-on-1最小;1 000个脉冲激光辐照下的累积效应不显著,并且在激光光斑尺寸的差异较小时,阈值与光斑尺寸的对应关系并不明显;光斑尺寸相同时,扫描光斑的间距越小,激光预处理效果越好。     

激光辐照VO2薄膜温度场分布及透射特性研究

为了探究VO₂薄膜受激光辐照的温度场分布,以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值,并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真,然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO₂薄膜利用分子束外延法在Al₂O₃基底上制备得到。仿真结果表明,激光功率密度为25 W·mm^-2时,50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO₂薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 W·mm^-2和5.39 W·mm^-2。30 nm厚VO₂薄膜对1 064 nmn激光的透过率调制深度约为13%,对3 459 nm激光透过率调制深度约62%,说明VO₂薄膜对近红外透过率调制特性不明显。     

硅酸铅玻璃光敏性研究

采用四倍频的Nd∶YAG脉冲激光 (波长 2 6 6nm ,脉宽 10ns)对氧化铅摩尔分数在 0 3至 0 5的硅酸铅玻璃体样品进行照射 ,并对照射前后样品的折射率及紫外可见吸收光谱进行了测量。研究发现不同能量密度的2 6 6nm激光照射硅酸铅玻璃体样品 ,会使样品的紫外可见吸收光谱产生不同的变化 :当 2 6 6nm激光能量密度较高时 (15 0mJ/cm2 ) ,样品在可见区域的吸收系数明显增大 ,样品表面会产生褐色斑点 ;而当 2 6 6nm激光能量密度较低时 (5 0mJ/cm2 ) ,尽管累计剂量较大 ,样品表面无斑点产生 ,吸收系数稍有增加 ,而折射率下降明显 ,最大Δn =- 0 .2 5± 0 .0 4。对氧化铅摩尔分数为 0 4 3的硅酸铅玻璃用不同能量密度的 2 6 6nm激光进行照射 ,发现当激光能量密度大于某一阈值时 ,样品在可见区域的吸收系数突然增大 ,这可能是由于硅酸铅玻璃吸收 2 6 6nm激光能量导致局部温度升高而引起玻璃结构改变所致。     

纳秒激光脉冲诱导硅表面微结构

利用Nd:YAG纳秒激光脉冲,在能量密度为1～10 J/cm2范围内辐照单晶硅,形成了表面锥形微结构,在SF6气氛和空气环境下均形成了锥形尖峰表面微结构。SF6气氛下产生的锥形尖峰顶端都有小球,部分锥形上还有二次尖峰形成,空气中纳秒激光诱导的锥形尖峰微结构顶端和边缘有由液滴固化形成的粒状物质,不同于利用准分子纳秒激光诱导的细长须状结构和飞秒激光辐照下产生的具有表面枝蔓状纳米结构的锥形微结构。实验结果表明,这种尖峰微结构的形成与辐照激光的波长和脉冲持续时间有关。对空气中微构造硅的辐射反射的初步研究表明,在500～2 400 nm范围内的光辐射反射率不高于20%。     

谷氨酸钠溶液514nm激光拉曼光谱受环境光影响的研究

探讨了环境光的存在对谷氨酸钠溶液的514 nm绿色激光激发的拉曼光谱的影响.研究表明不同的环境光、自然光和室内荧光灯光均会对514 nm激光拉曼光谱产生干扰,存在着特征干扰峰.自然阳光干扰较小;而荧光灯光表现为1127、2107 cm-1和2170 cm-1等3个明显尖锐的脉冲峰,不能忽略.建议在进行谷氨酸钠溶液514 nm绿色激光拉曼光谱检测时,须在暗室或暗罩中进行,以完全隔离环境光的影响.     

脉冲激光对绝缘体上硅材料的损伤机理研究

绝缘体上硅(SOI)材料的激光损伤特性研究对基于该材料的光学器件在激光环境中的应用具有重要价值。本文使用1064 nm脉冲激光对SOI材料进行了辐照实验,在脉冲宽度分别为190 ps和280μs的条件下,测得的损伤阈值能量密度分别为2.5 J/cm2和19.8 J/cm2,SOI材料表面的激光损伤模式也存在明显差别。根据实验结果,利用ANSYS软件的热分析模块,采用有限元方法数值模拟了激光辐照结束后SOI材料内部的温度场分布,并结合损伤形貌的观测对SOI材料的激光损伤机制进行了讨论。     

1 064 nm与532 nm激光对电子束蒸发制备的HfO2/SiO2高反膜损伤比较

 研究了电子束蒸发制备的HfO₂/SiO₂高反膜在1 064 nm与532 nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑,当能量密度较大时出现分层剥落;二倍频激光损伤主要是由电子缺陷引起的平底坑,辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑,但电子缺陷的损伤阈值更低;随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为,辐照激光波长的变化,引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。     

He-Ne激光和增强UV-B辐射对小麦TaRAN1蛋白的影响

采用He-Ne激光(5 mW· mm 2)和增强UV-B(10.08 kJ·m-2·d-1)辐照‘ML7113’小麦幼苗,6天后提取各处理组小麦幼苗的总蛋白和TaRAN1蛋白,用SDS-PAGE对其进行初步检测及Western Blot对目的蛋白进行鉴定,并采用考马斯亮蓝法测量不同处理组的TaRAN1蛋白的含量以做进一步的比较分析.结果表明:增强UV-B辐射使小麦TaRAN1蛋白电泳条带加宽颜色加深且含量显著增加;单独He-Ne激光处理,蛋白电泳条带较窄颜色较淡且所测的蛋白含量明显减少,表现出了抑制作用;经He-Ne激光辐照和UV-B辐射复合处理后,蛋白的含量明显低于B组而与对照组相差不明显.说明增强UV-B辐射后,小麦TaRAN1蛋白可能参与了植物的抗逆境反应.     

激光烧蚀掺杂金属聚合物羽流屏蔽特性数值研究

激光烧蚀推进中,烧蚀羽流对入射激光的屏蔽效应是影响推进性能的重要因素;当采用掺杂金属聚合物作为工质时,易电离金属掺杂物的引入,使屏蔽效应更加明显.本文建立了激光烧蚀掺杂金属聚合物羽流飞散及电离、屏蔽模型,计算了3—40 J/cm~2激光烧蚀掺杂微米铝颗粒聚甲醛工质的比冲,与实验数据对比表明模型能够有效模拟掺杂聚合物羽流的屏蔽特性.获得了不同激光能量密度下的电子数密度、吸收系数分布及屏蔽系数时间变化曲线.结果表明:低激光能量密度(5 J/cm~2)时,羽流屏蔽效应以未完全分解聚合物短链对入射激光能量的吸收为主;高激光能量密度(20 J/cm~2)下,羽流电子数密度逐步增大至1020m~(-3),形成明显的等离子体吸收,屏蔽系数的时间变化特征复杂.本文对掺杂金属聚合物烧蚀羽流的屏蔽特性进行了定量研究,可为激光烧蚀推进性能优化提供参考.     

Laser emission of (Nd,Y)-pentaphosphate at 1.32 μm

The room-temperature cw lasing of (Nd, Y)-pentaphosphate crystals at an optical wavelength of 1.32 μm is reported. The absorbed pump power at threshold was 12 mW using the 514 nm line of an argon laser as pump source. The cross section for stimulated emission at 1.32 μm was 0.2 x 10^-19 cm² as compared with 1.43 x 10^-19 cm² for emission at 1.052 μm.     

Displacement sensor based on polarization mixture of orthogonal polarized He-Ne laser at 1.15μm

Displacement sensor based on the polarization mixture and the cavity tuning of the orthogonal polarized He-Ne laser 1.15μm is presented.The power tuning curves of He-Ne laser are irregular,and it is difficult to measure the change in cavity length.The distortion of the curves is caused by the higher relative excitation compared with the He-Ne laser at 633 nm.In view of its potential for the wider displacement measuring range,a new method of displacement sensing is developed.Experiments show that displacement measuring stability based on the method of the polarization mixture is better than that of the power tuning curves. The displacement sensor achieves the measuring range of 100 mm,resolution of 144 nm,and linearity of 7×10-6 .     

Position-controlled synthesis of single-walled carbon nanotubes on a transparent substrate by laser-induced chemical vapor deposition

The synthesis of single-walled carbon nanotubes (SWCNTs) on a transparent substrate with multiple-catalyst layer (Fe/Al/Cr: 0.5/15/500 nm) using laser-induced chemical vapor deposition is reported. Ethylene (C₂H₄) mixed with hydrogen (H₂) and a continuous wave Nd:YVO₄ laser (532 nm) were used as the precursor gas and the irradiation source, respectively. It was found that the density and quality of the SWCNT dots varied sensitively to laser irradiance and chamber pressure. From subsequent micro-Raman analyses at different excitation sources (488, 514, 633, and 785 nm), the diameters of the SWCNTs were estimated to be within the range of 0.8-2 nm and that the SWCNT dots were composed of both semiconducting and metallic SWCNTs. It is demonstrated that an array of SWCNT dots can be fabricated at precisely controlled positions of a transparent substrate at room temperature with no need of catalysis patterning.     

The amounts of hydroxyl radicals generated by titanium dioxide and 3.5% hydrogen peroxide under 405-nm diode laser irradiation

A new bleaching agent consisting of a titanium dioxide photocatalyst and 3.5% hydrogen peroxide has recently been developed for in-office bleaching and has proven to react well with irradiated light around a wavelength of 400 nm. This study was conducted to evaluate the efficacy of dental bleaching with a 405-nm diode laser irradiation on titanium dioxide and 3.5% hydrogen peroxide by measuring the generation of hydroxyl radicals. The amount of hydroxyl radicals generated from a titanium dioxide and 3.5% hydrogen peroxide irradiated by a 405-nm diode laser were measured using electron spin resonance spin-trapping techniques. The irradiation conditions of the laser were a spot size of 1 mm, output powers of 100, 200, 400 mW, and 600 mW, and irradiation times of 10, 20, 30, and 60 s. Nonirradiated samples were used as controls. DMPO-OH adduct spectra and DMPO-O ₂ ^? adduct spectra were observed when the bleaching agent was irradiated by laser light. The amount of hydroxyl radicals generated changed in accordance with adjustments in the irradiation power and irradiation time. In the nonirradiated controls, hydroxyl radicals were generated in far smaller amounts. The 405-nm diode laser is effective in inducing the generation of hydroxyl radicals and shows promise as a bleaching light source for use in combination with bleaching agents composed of titanium dioxide and low concentrations of hydrogen peroxide.     

Multiexcitation Raman Spectroscopy in Identification of Chinese Jade

The high-fluorescence background of jade creates a great impact on the Raman spectra measurements that impedes their application in jade analysis and treatment, particularly with ancient jade. The five most important materials of Chinese ancient jade are amphibole, serpentine, turquoise, agate/chalcedony, and anorthite-zoisite (Dushan jade). This study comparatively analyzed the Raman spectra of different wavelengths' excitation light sources (514.5 nm, 632.8 nm, 785 nm) in identifying these Chinese jades, and this article discusses the most applicable ones to the analysis of different jade materials. The results show that although 632.8 nm He-Ne laser is appropriate for turquoise jades, generally speaking, Raman spectra produced by the 785 nm semiconductor laser and the 632.8 nm He-Ne laser are better for most kinds of jades than the spectra produced by the 514.5 nm argon ion laser, and both of them can be effectively used jointly in research by nondestructive phase analysis of Chinese ancient jade.     

Electronic mechanism for refractive-index changes in intensively pumped Yb:YAG laser crystals

Refractive-index changes accompanying changes in population of electronic levels of Yb3+ ions in a Yb:YAG laser disk under intense diode and laser pumping have been studied by use of both a highly sensitive polarization interferometer and transient grating testing at 633 nm. The electronic change of the index that is due to excitation of the Yb3+ ions (which have different polarizability of ground state 2F7/2 and excited level 2F5/2) is strongly predominant over the thermal component. The polarizability differences are deltap (1.9 +/- 0.8) x 10(-26) and (1.95 +/- 0.25) x 10(-26) cm3 as measured at 633 nm in interferometric and transient grating experiments, respectively.     

Accuracy comparison of absolute optical frequency measurement between harmonic-generation synthesis and a frequency-division femtosecond comb

Using an iodine-stabilized He-Ne laser as a transfer oscillator, we compare absolute measurements of the optical frequency from a traditional frequency synthesis chain based on harmonic generation and from the frequency division technique of an ultrawide bandwidth femtosecond frequency comb. The agreement between these two measurements, both linked to the Cs standard, is 220+/-770 Hz, yielding a measurement accuracy of 1.6x10(-12). We report 473 612 353 604.8+/-1.2 kHz as a preliminary updated value of the absolute frequency of the " f" component for the He-Ne laser international standard at 633 nm.     

IRRADIATION OF HUMAN LYMPHOCYTES WITH He-Ne LASER INCREASES THE BLAST Ⅰ TRANSFORMATION CAUSED BY PHYTOHEMAGGLUTSNIN

The irradiation of human lymphocytes with a He-Ne laser(632.8nm,56J/m~2) elevated the DNA synthesis levol in phytohemagglutinin-treated cells,but didnot itself cause the blasttransformation.The boosting effect of irradition was especiallypronounced in case of suboptimal PHA concentrations(0.5and 1μg/ml).     

Ge2 Sb2 Te5相变薄膜光学及擦除性能研究

利用蓝绿激光对非晶态Ge2Sb2Te5 相变薄膜进行擦除性能的研究,分别用1000 ns,500 ns,100 ns,60 ns脉宽的蓝绿激光进行实验.结果表明,一定脉宽下,反射率对比度随擦除功率的增加而增大.并且,在1000 ns,500 ns,100 ns,60 ns的激光作用时间范围内,非晶态薄膜均可转变成晶态.对于脉宽为60 ns的蓝绿激光,擦除功率大于4.49 mW以后,薄膜的反射率对比度高于15％,这表明Ge2Sb2Te5相变薄膜在短脉宽、低擦除功率条件下,可具有较高的晶化速度.同时,分析了非晶态和晶态Ge2Sb2Te5相变薄膜的光谱特性,对比研究了780 nm,650 nm,514 nm和405 nm波长处的反射率和反射率对比度,提出了Ge2Sb2Te5相变薄膜用于蓝光光盘的改进方法.     

He-Ne激光对增强UV-B辐射拟南芥抗氧化系统的损伤修复

以培养6周左右的拟南芥为材料,采用UV-B辐射（剂量1 KJ/m2/d）和He-Ne激光器（波长632.8 nm,输出功率5 mW·mm2,辐照时间60 s）对材料进行处理,分成CK（没有经过UV-B或激光辐照）组、B(UV-B辐射)组、BL（UV-B和激光复合处理）组和L（激光辐照）组4个不同处理组.结果表明:增强的UV-B辐射拟南芥幼苗导致MDA(Malondialdehyde)、超氧阴离子含量升高,GSH(Glutathione)含量降低,PAL(phenylalanine ammomia-lyase)、CAT(catalase)和APX(ascorbate peroxidase)活性升高,SOD(supemxide dismutas)活性降低.单独He-Ne激光处理使MDA、超氧阴离子含量降低,GSH的含量升高,SOD、APX、CAT的活性升高,PAL的活性降低.UV-B辐射后再用He-Ne激光进行后处理,发现与单独UV-B辐照处理相比,MDA、超氧阴离子含量降低,GSH含量升高,SOD、APX、CAT的活性升高了,PAL的活性降低了.因此激光在一定程度上提高了拟南芥叶片抗氧化能力,在此基础上讨论了其可能的形成机理.