Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots

Inelastic scattering processes of two-dimensional electron gas (2DEG) have been investigated in a inverted GaAs/n-AlGaAs heterojunction with self-organized InGaAs quantum dots (QDs) embedded near the 2DEG channel where the electron population in the QDs is controllable by the gate voltage V_g. By analyzing magnetoresistance, the inelastic scattering time τ_ε have been evaluated as functions of V_g at 0.6, 0.8, 1.2, and 1.7 K. It is found that τ_ε increases with V_g below 0.8 K and decreases above 1.2 K, which suggests that the dominant scattering mechanisms below 0.8 K and above 1.2 K are different. To interpret this behavior, we have calculated the inelastic scattering time theoretically. It is found that the experimental data are well explained by a theoretical model where a 2D electron is considered to be inelastically scattered both by the other 2D electrons and by the trapped electrons in QDs. It is also found that the 2DEG–2DEG scattering is dominant at low temperature, while the 2DEG-QDs scattering becomes important as the temperature increases.     

Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

The hot-carrier degradation for 90~nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate voltage (LGV) (at V_g=V_th, where V_th is the threshold voltage) stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV (V_g=V_th stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage (GIDL) current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at V_g=V_th with various drain biases. Experimental results show that the degradation slopes (n) range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET (0.5-0.6) and also that of the long gate length LDD MOSFET (\sim0.8).     

Transport and dielectric properties of V2O5-MnO-TeO2 glasses

The frequency (1-10 kHz) and temperature (80-350 K) dependences of the ac conductivity and dielectric constant of the V₂O₅-MnO-TeO₂ system, containing two transition-metal ions, have been measured. The dc conductivity _dc measured in the high-temperature range (200-450 K) decreases with addition of the oxide MnO. This is considered to be due to the formation of bonds such as V--O--Mn and Mn--O--Mn in the glass. The conductivity arises mainly from polaron hopping between V^4+M and V⁵⁺ ions. It is found that a mechanism of adiabatic small-polaron hopping is the most appropriate conduction model for these glasses. This is in sharp contrast with the behaviour of the Mn-free V₂O₅-TeO₂ glass, in which non-adiabatic hopping takes place. High-temperature conductivity data satisfy Mott's small-polaron hopping model and also a model proposed by Schnakenberg in 1968. A power-law behaviour ( _ac = Aω^s , with s < 1) is well exhibited by the ac conductivity σ_ac data of these glasses. Analysis of dielectric data indicates a Debye-type relaxation behaviour with a distribution of relaxation times. The MnO-concentration-dependent σ_ac data follow an overlapping large-polaron tunnelling model over the entire range of temperatures studied. The estimated model parameters are reasonable and consistent with changes in composition.     

On the Electrical and Optical Properties of Some Poly(Azomethine Sulfone)s in Thin Films

Poly(azomethine sulfone)s were synthesized by reacting 4,4′-sulfonyl bis(4-chlorophenyl) with 2,2-bis(4-hydroxyphenyl)propane and azomethine bisphenol in different molar ratios. Thin films were deposited from solution onto glass substrates. Study of the temperature dependences of the electrical conductivity, σ, and Seebeck coefficient, S, were performed in the temperature range 300 K–500 K. Thermal activation energies of electrical conduction, E_a , calculated from these dependences, ranged between 1.50 eV and 1.85 eV. The values of E_a were smaller for polymers with extended conjugation systems. The possibility to use the polymers in thermistor technology is discussed. The aspect of the temperature dependences of σ and S shows that a model based on the energy band-gap representation can be successfully used for explaining the electronic transport mechanism in the higher temperature range. In the lower temperature range, the mechanism of the electrical conduction is discussed in terms of the Mott variable range hopping conduction. The values of some optical parameters (absorption coefficient, optical band gap, etc.) were determined from transmission spectra.     

Effect of Zn–Ti double substitution on the electrical properties of Bi4V2O11

New samples of the Bi₂Zn_0.1–xTi_xV_0.9O_5.35+x; 0.02 ≤ x ≤ 0.08 system have been synthesized through a standard solid-state reaction route. XRD analysis and differential thermal analysis have been used to characterize the phase structure of samples. The γ′ phase is stabilized to room temperature in all investigated samples. The electrical properties of the BIZNTIVOX system have been studied by using AC impedance spectroscopy. An AC impedance response as a function of frequency (20 Hz–1 MHz) has been used to investigate the electrical conductivity and the dielectric permittivity in the temperature range of 150 °C–700 °C. In this temperature range, the phase transition γ′ to γ has been observed in all the compositions studied. AC impedance spectroscopy indicates that the resistance of samples decreases with increase of temperature. The ionic conductivity of samples appeared as a two-line region in Arrhenius dependence. At 300 °C, the highest ionic conductivity is shown by the composition x = 0.05 (σ₃₀₀ = 1.35 × 10^?4 S cm^?1).     

Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of silicon

The amplitude of the quantum oscillations in the magnetoconductance of a silicon inversion layer has been studied as a function of gate voltage V_g, for different values of the temperature T, applied magnetic field strength H and substrate bias V_s. By analyzing the amplitude of the oscillations at fixed V_g and V_g as a function of T and H, the dependence of the cyclotron effective mass m¹ and the Dingle temperature T_D on V_g and V_s can be obtained. The dependence of m¹ on V_g for different values of V_s is compared with the prediction of theory.     

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal——oxide——semiconductor field-effect transistors (PMOSFETs)

Hot carrier injection (HCI) at high temperatures and different values of gate bias V_g has been performed in order to study the actions of negative bias temperature instability (NBTI) and hot carriers. Hot-carrier-stress-induced damage at V_g=V_d, where V_d is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different: the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs). We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.     

Influence of lithium phosphate concentration and temperature on the electrical conduction of (76V2O5-24P2O5)1−X (Li3PO4)X glasses

Characterization of the (76V₂O₅-24P₂O₅)_1−X (Li₃PO₅)_X, where X=0.0,0.01,0.02,0.10 and 0.15, glass has been done using X-ray diffraction and differential thermal analysis (DTA). The dc conductivity of the glass samples was studied over a temperature range from 300 to 593 K. The temperature dependence of dc conductivity shows two regions. One at relatively high temperature range, above θ_D/2, and the other at relatively low temperature range, below θ_D/2. The I-V characteristics of the glasses have been studied as a function of both temperature and Li₃PO₄ content. The I-V characteristics exhibits threshold switching with differential negative resistance. It's found that both the threshold voltage (V_th) and threshold current (I_th) are dependent on the temperature and lithium phosphate concentration.     

Electrical and thermal properties of Ge40S60 films

Films of the composition Ge₄₀S₆₀ have been studied in the temperature range of 313–423 K for electrical conductivity, and 293–373 K for thermal conductivity. The dc conductivity results indicate a single value activation energy of 0.863 eV for the conductivity in the applied temperature range. The thermal conductivity coefficient increases linearly with temperature at a thickness of d=0.311 cm. It was found that the investigated samples show a memory effect. The threshold switching voltage was found to increase linearly with film thickness. Moreover, the threshold voltage decreases exponentially with temperature. The data are analysed using a thermal model for the switching process.     

Features of the conductivity of the quasi-one-dimensional compound TiS3

The structure and transport properties of single crystal whiskers of the TiS₃ quasi-one-dimensional semiconductor have been investigated. The anisotropy of the conductivity in the plane of layers (ab) has been measured as a function of the temperature. The anisotropy at 300 K is 5 and increases with a decrease in the temperature. Features on the temperature dependences of the conductivity along and across the chains are observed at 59 and 17 K. Near the same temperatures the form of the current-voltage characteristics measured along the chains is qualitatively changed. The current-voltage characteristics below 60 K exhibit nonlinearity and have a threshold form below 10 K. The results indicate possible phase transitions and the collective conduction mechanism at low temperatures.     

Anomalous increase of the thermopower and thermoelectric figure of merit in Ga-doped <Emphasis Type="Italic">p</Emphasis>-(Bi<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> single crystals

The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric figure of merit Z of p-(Bi_0.5Sb_0.5)₂Te₃ single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate a noticeable variation in the density of states due to the Ga doping.     

High-temperature phase transitions in the improper ferroelectric KIO3

The ac conductivity (σ_ac) and dielectric permittivity (?) are determined in the temperature range 300?K?T3 compound. The results indicated that the compound behaves as an improper ferroelectric and undergoes a ferroelectric phase transition from a high temperature rhombohedral phase I to a low temperature monoclinic phase II at T _c?=?(486?±?1)?K. A second structural phase transition was observed around 345?K. The conductivity varies with temperature range and for T?>?428?K intrinsic conduction prevails. Different activation energies in the different temperature regions were calculated. The frequency dependence of σ(ω) was found to follow the universal dynamic response [σ(ω)∝(ω) ^s(T)]. The thermal behaviour of the frequency exponent s(T) suggests the hopping over the barrier model rather than the quantum mechanical tunneling model for the conduction mechanism.     

微晶硅薄膜晶体管稳定性研究

对有源区处于结构过渡区的微晶硅底栅薄膜晶体管，测试其偏压衰退特性时，观察到一种“自恢复”的衰退现象.当栅和源漏同时施加10 V的偏压时，测试其源-漏电流随时间的变化，发现源-漏电流先衰减、而后又开始恢复上升的反常现象.而当采用栅压为10 V、源-漏之间施加零偏压的模式时，源-漏电流随时间呈先是几乎指数式下降、随之是衰退速度减缓的正常衰退趋势.就此现象进行了初步探讨. 关键词： 过渡区硅材料 微晶硅薄膜晶体管 稳定性 自恢复衰退     

Analytical representation of the density derivative of the Percus–Yevick hard-sphere radial distribution function

ABSTRACT

Explicit analytical expressions are presented for the density derivative, ?g_HS(R; ρ)/?ρ, of the Percus–Yevick approximation to the hard-sphere radial distribution function for R ≤ 6σ, where σ is the hard-sphere diameter and ρ = (N/V)σ³ is the reduced density, where N is the number of particles and V is the volume. A FORTRAN program is provided for the implementation of these for R ≤ 6σ, which includes code for the calculation of g_HS(R; ρ) itself over this range. We also present and incorporate within the program code convenient analytical expressions for the numerical extrapolation of both quantities past R = 6σ. Our expressions are numerically tested against exact results.     

Electrical and magnetic properties of manganites La1 ? xAgxMnO3 (x = 0.05, 0.1, and 0.2) at 77 K < T < 300 K

The electrical conductivity, magnetization, and magnetoresistance of manganites La_{1 − x} Ag _x MnO₃ have been investigated in the temperature range 78–300 K. The samples have been synthesized by the sol-gel method. At room temperature, the magnetic field of 0.6 T has no effect on the electrical conductivity. As the temperature decreases, an abrupt jump is observed in the magnetization curve due to the semiconductor-metal phase transition. This transition hardly affects the temperature dependence of the resistance.     

Lithium ions conduction in Li2xMn1-xPS3 films

Li_2xMn_1-xPS₃ films have been synthesized by exfoliating MnPS₃ through the successive intercalations of K⁺ and Li⁺ ions. Their dielectric response has been measured from 80 to 350 K in the frequency range of (10²–10⁶) Hz. The obtained data have been analyzed in terms of both complex permittivity ε* and the ac conductivity σ_ac. The frequency dependence of σ_ac has been interpreted in terms of the Jonscher’s law, whose exponent n decreases by increasing temperature. The n values lie between 0.479 and 0.501 and are typical of materials in which the ac conductivity is due to multiple hops of carriers. By analyzing the σ_dc temperature dependence, the observed dielectric response has been attributed to the intercalated lithium ions, and the Li_2xMn_1-xPS₃ films have been classified as hopping charge carrier systems.     

Electrical conduction and dielectric properties of vanadium phosphate glasses doped with lithium

AC conductivity and dielectric studies on vanadium phosphate glasses doped with lithium have been carried out in the frequency range 0.2-100 kHz and temperature range 290-493 K. The frequency dependence of the conductivity at higher frequencies in glasses obeys a power relationship, σ_ac=Aω^s. The obtained values of the power s lie in the range 0.5≤s≤1 for both undoped and doped with low lithium content which confirms the electron hopping between V⁴⁺ and V⁵⁺ ions. For doped glasses with high lithium content, the values of s≤0.5 which confirm the domination of ionic conductivity. The study of frequency dependence of both dielectric constant and dielectric loss showed a decrease with increasing frequency while they increase with increasing temperature. The results have been explained on the basis of frequency assistance of electron hopping besides the ionic polarization of the glasses. The bulk conductivity increases with increasing temperature whereas decreases with increasing lithium content which means a reduction of the V⁵⁺.     

Synthesis,crystal structure and electrical properties of (C5H13NCl)2 SnCl6

In this work, a novel compound Bis(2-chloropropyl-N,N-dimethyl-1-ammonium) hexachloridostannate(IV) was synthesized and characterized by; single X-ray diffraction, Hirshfeld surface analysis, differential scanning calorimetric and dielectric measurement. The crystal structure refinement at room temperature reveled that this later belongs to the monoclinic compound with P2₁/n space group with the following unit cell parameters a = 7.2894(7) Å, b = 12.9351(12) Å, c = 12.2302(13) Å and β = 93.423 (6) °. The structure consists of isolated (SnCl₆)^2? octahedral anions connected together into layers via hydrogen bonds N–H….Cl between the chlorine atoms of the anions and the hydrogen atoms of the NH groups of the [C₅H₁₃NCl]⁺ cations. Hirschfeld surface analysis has been performed to gain insight into the behavior of these interactions. The differential scanning calorimetry spectrum discloses phase transitions at 367 and 376.7 K. The electrical properties of this compound have been measured in the temperature range 300–420 K and the frequency range 209 Hz–5 MHz. The Cole–Cole (Z′ versus Z″) plots are well fitted to an equivalent circuit model. The transition phase observed in the calorimetric study is confirmed by the change as function of temperature of electrical parameter such as the conductivity of grain (σ_g) and the σ_dc.     

Temperature dependence of the MnPS3 crystal fluorescence

Summary The fluorescence spectra of MnPS₃ single crystals have been investigated at various temperatures beginning from 300K down to 10K in the 1.5 eV to 3.0 eV range. Four structures are observed in all spectra. The strong similarity between these results and previous data concerning the MnPS₃ room temperature fluorescence suggests an intra-Mn nature for the transitions responsible for the above features. All the subband gap structures exhibit a temperature shift which can be satisfactorily interpreted by means of the crystal field theory and the so-called ?transition metal weakly interacting? model. The fine splitting in the originally degenerate {⁴ E _g,⁴ A _1g} levels is enhanced as temperature decreases. These results confirm the Mn²⁺ 3ϕ excited-state energy distribution deduced from the transition metal weakly interacting model. The authors of this paper have agreed to not receive the proofs for correction.     

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I_Dsat, maximal transconductance g_m, and the positive shift of threshold voltage V_TH at high drain-source voltage V_DS. The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V_DS=20 V and V_GS=0 V applied to the device for 10⁴ sec, the SiN passivation decreases the stress-induced degradation of I_Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I_Dsat, which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted.