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为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi2/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi2 /Si(100)纳米岛的电子和几何特性. 结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM 图像由三聚物形成的单胞构成,并在低偏压下STM 图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异.
关键词:
2纳米岛')" href="#">TiSi2纳米岛
Sr/Si(100)表面
扫描隧道显微镜 相似文献
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《物理学报》2021,(10)
MgO基磁性隧道结是自旋电子器件研究的热点问题,其温度特性和偏压特性在实际应用中极其重要.因此,亟需在理论上计算得到MgO基磁性隧道结的温度-偏压相图.本文构建了适用于单晶势垒层磁性隧道结的理论.该理论将单晶势垒层视作周期性光栅,利用光学衍射理论处理势垒层对隧穿电子的衍射,因此可以很好地计入隧穿电子波的相干性.根据此理论,同时计入温度和偏压的影响计算了MgO基磁性隧道结的温度-偏压相图.理论结果表明,通过调节MgO基磁性隧道结的铁磁电极半交换劈裂能D、化学势μ以及势垒层周期势v(Kh)可以优化其温度特性和偏压特性.该结果为MgO基磁性隧道结的应用提供了坚实的理论基础. 相似文献
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从能量和结构两个角度分析了BN四种相的转变过程,以及杂质和缺陷对立方氮化硼(c-BN)薄膜制备的影响.研究了从六角氮化硼(h-BN)到c-BN转变的一个可能的过程,即h-BN→菱形氮化硼(r-BN)→c-BN过程.对纯的h-BN到r-BN的转变需要克服一个很高的能量势垒,在实验室条件下很难能够提供能量来越过这个势垒.而从r-BN到c-BN的转变只需要克服一个很低的能量势垒.这个能量势垒要低于从h-BN到纤锌矿氮化硼(w-BN)转变所需要克服的能量势垒.c-BN薄膜的制备过程中,薄膜在高能粒子轰击下,会产生大量的缺陷,这些缺陷对立方相的形成起到了重要的作用,缺陷和杂质的存在大大降低了从h-BN到r-BN转变的能量势垒.根据这个理论模型,在两步法制备c-BN薄膜的基础上,调整实验参数,形成三步法制备高质量c-BN薄膜.主要研究了三步法中第一步的时间和衬底负偏压对c-BN薄膜制备的影响,找到合适的沉积时间和衬底负偏压分别为5min和-180V.采用三步法制备薄膜,可以重复得到高立方相体积分数(立方相体积分数超过80%)的BN薄膜,并且实验重复性达到70%以上.
关键词:
立方氮化硼
能量势垒
缺陷
衬底偏压 相似文献
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利用磁控溅射方法沉积双势垒磁性隧道结多层膜, 其中Al-O势垒层由等离子体氧化1 nm厚的 金属铝膜方式制备,然后采用深紫外光曝光和Ar离子刻蚀技术、微加工制备出长短轴分别为 6和3 μm大小的椭圆形双势垒磁性隧道结(DBMTJ),并在室温和低温下对其自旋电子输运 特性进行了研究. DBMTJ的隧穿磁电阻(TMR)比值在室温和42 K分别达到27%和423%, 结电阻分别为136 kΩ·μm2和175 kΩ·μm2,并在实验中观 察到平行状 态下存在低电阻态及共振隧穿效应,反平行态下呈现高电阻态以及TMR随外加偏压或直流电 流的增加而发生振荡现象. 由此,设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶 体管.
关键词:
双势垒磁性隧道结
隧穿磁电阻
共振隧穿效应
自旋晶体管 相似文献
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基于安德森紧束缚模型,本文研究了无序双层六角氮化硼量子薄膜的电子性质. 数值计算结果表明在双层都无序掺杂的情况下,六角氮化硼量子薄膜的电子是局域的, 其表现为绝缘体性质;而对于单层掺杂(无论是氮原子还是硼原子)的双层六角氮化硼量子薄膜, 在能谱的带尾出现了持续的迁移率边.这就说明在单层掺杂的双层六角氮化硼量子薄膜中产生了 金属绝缘体转变.这一结果证实了有序-无序分区掺杂的理论模型,为理解及调控双层六角氮化硼量子薄膜 的电子性质提供了有益的理论指导. 相似文献
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《原子与分子物理学报》2015,(5)
利用基于密度泛函理论和非平衡态格林函数的第一性原理计算研究了CoFe/MgO/CoFe磁性隧道结的隧穿磁电阻效应.给出了该隧道结隧穿磁电阻与偏压的依赖关系,并计算了平行结构与反平行结构相应的I-V特性曲线和传输谱.通过在一侧电极与势垒层之间插入反铁磁金属Cr层,观察到了隧穿磁电阻、电导随插入层Cr层数增加发生衰减和2个原子层周期的振荡现象,这主要是由于Cr拥有反铁磁结构,在Cr/MgO界面形成了与Cr磁矩取向相关的界面散射. 相似文献
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Motivated by the recent success of local electron tunneling into heavy-fermion materials, we study the local electronic structure around a single Kondo hole in an Anderson lattice model and the Fano interference pattern relevant to STM experiments. Within the Gutzwiller method, we find that an intragap bound state exists in the heavy Fermi liquid regime. The energy position of the intragap bound state is dependent on the on-site potential scattering strength in the conduction and f-orbital channels. Within the same method, we derive a new dI/dV formulation, which includes explicitly the renormalization effect due to the f-electron correlation. It is found that the Fano interference gives asymmetric coherent peaks separated by the hybridization gap. The intragap peak structure has a lorenzian shape, and the corresponding dI/dV intensity depends on the energy location of the bound state. 相似文献
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Using a low temperature, ultrahigh vacuum scanning tunneling microscope (STM), dI/dV differential conductance maps were recorded at the tunneling resonance energies for a single Cu phthalocyanine molecule adsorbed on an Au(111) surface. We demonstrated that, contrary to the common assumption, such maps are not representative of the molecular orbital spatial expansion, but rather result from their complex superposition captured by the STM tip apex with a superposition weight which generally does not correspond to the native weight used in the standard Slater determinant basis set. Changes in the molecule conformation on the Au(111) surface further obscure the identification between dI/dV conductance maps and the native molecular orbital electronic probability distribution in space. 相似文献
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Yamada TK Bischoff MM Heijnen GM Mizoguchi T Van Kempen H 《Physical review letters》2003,90(5):056803
We report the observation of a magnetic contrast of up to 20% in the scanning tunneling spectroscopy dI/dV maps obtained with Fe-coated tips on Mn(001) layers grown on an Fe(001) whisker at 370 K. These nanometer resolution microscopy results show that the layers couple antiferromagnetically. By normalizing the dI/dV curves by tunneling probability functions, we found a spin-dependent peak on the body-centered-tetragonal (bct) Mn(001) surface at +0.8 V, whose high spin polarization gives rise to the dI/dV map contrast. Band structure calculations allow one to identify the +0.8 V peak as due to two spin-polarized d(z(2)) surface states. 相似文献
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Kim S Ye M Kuroda K Yamada Y Krasovskii EE Chulkov EV Miyamoto K Nakatake M Okuda T Ueda Y Shimada K Namatame H Taniguchi M Kimura A 《Physical review letters》2011,107(5):056803
We have performed scanning tunneling microscopy and differential tunneling conductance (dI/dV) mapping for the surface of the three-dimensional topological insulator Bi(2)Se(3). The fast Fourier transformation applied to the dI/dV image shows an electron interference pattern near Dirac node despite the general belief that the backscattering is well suppressed in the bulk energy gap region. The comparison of the present experimental result with theoretical surface and bulk band structures shows that the electron interference occurs through the scattering between the surface states near the Dirac node and the bulk continuum states. 相似文献
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扫描隧道显微镜(STM)提供给我们一种表征单分子的局域物理和化学特性的特殊方法,甚至还能帮助我们操纵单分子以构造分子尺度的新型器件。本文中我们采用了两种新型STM技术分别来表征封装在富勒烯笼里面的金属原子和构造一种具有较强Kondo效应的分子器件。空间dI/dV映像谱被用来探索单个Dy@C82分子中能量分辨的金属-笼杂化态,揭示了有关Dy原子在碳笼中的空间位置和Dy-碳笼之间相互作用的重要信息。我们也通过控制STM针尖诱导的高电压脉冲来诱导CoPc分子的边缘脱氢化,从而改变了这个分子在Au(111)表面的吸附构型,导致吸附在Au表面的完整CoPc分子所不具备的Kondo效应产生。 相似文献
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Linear Au chains two to 20 atoms long were constructed on a NiAl(110) surface via the manipulation of single atoms with a scanning tunneling microscope. Differential conductance (dI/dV) images of these chains reveal one-dimensional electronic density oscillations at energies 1.0 to 2.5 eV above the Fermi energy. The origin of this delocalized electronic structure is traced to the existence of an electronic resonance measured on single, isolated Au atoms. Variations in the wavelength in dI/dV images of an eleven-atom chain taken at different energies revealed an effective electronic mass of 0.4+/-0.1 times the mass of a free-electron. 相似文献
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B. V. Andryusheckin V. V. Cherkez V. M. Shevlyuga K. N. Eltsov 《Physics of Wave Phenomena》2010,18(3):172-184
Interaction of molecular iodine with the Cu(110) surface is investigated by the methods of ultrahigh vacuum scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). It is found that at the coverage θ =0.5 monolayer (ML) iodine forms a simple commensurate c(2×2) lattice. Further exposure of iodine leads to uniaxial compression of the c(2×2) lattice along the 〈110〉 direction of the substrate. The STM data indicate that compression of the iodine layer proceeds through formation of striped domain walls. As the coverage is saturated at θ = 0.63 ML, iodine forms a uniformly compressed quasi-hexagonal structure. Further exposure of iodine on the Cu(110) surface results in growth of a copper iodide film. STM images of thin (7 to 20 Å) CuI films reveal, in addition to atomic modulation, a superstructure with a period of 90 to 100 Å consisting of double stripes. A structure model of the copper iodide surface allowing for CuI lattice contraction and formation of double stripe domain walls is proposed. 相似文献
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石墨烯-六方氮化硼面内异质结构因可调控石墨烯的能带结构而受到广泛关注. 本文介绍了在超高真空体系内, 利用两步生长法在两类对石墨烯分别有强和弱电子掺杂的基底, 即Rh(111)和Ir(111)上制备石墨烯-六方氮化硼单原子层异质结构. 通过扫描隧道显微镜及扫描隧道谱对这两种材料的形貌和电子结构进行研究发现: 石墨烯和六方氮化硼倾向于拼接生长形成单层的异质结构, 而非形成各自分立的畴区; 在拼接边界处, 石墨烯和六方氮化硼原子结构连续无缺陷; 拼接边界多为锯齿形型, 该实验结果与密度泛函理论计算结果相符合; 拼接界面处的石墨烯和六方氮化硼分别具有各自本征的电子结构, 六方氮化硼对石墨烯未产生电子掺杂效应. 相似文献
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Combining low-temperature scanning tunneling microscopy and spectroscopy with high-resolution ultraviolet photoemission, we have revealed a confined Shockley surface state on the (111) facets of gold clusters with about N=10(4) atoms grown in nanopits on highly oriented graphite. With tunneling spectroscopy, we observed energy dependent nodal patterns in the dI/dV maps, which are in quantitative agreement with the two-dimensional confinement of the surface state within the hexagonal facet area. The results indicate that the lattice of the ionic cores influences the electronic properties of the clusters significantly. 相似文献