交流发光二极管热特性的模拟分析

由于交流发光二极管(AC-LED)在实际应用中无需交流/直流整流变压器,它的发展越来越被关注。随着器件功率的增大,芯片结温升高,对器件的光通量、光功率及寿命等产生负面影响,所以精确掌握AC-LED的温升规律就成为芯片设计的关键。运用FloEFD有限元软件进行模拟仿真1 W白光AC-LED分别在直流和交变功率驱动下的瞬态热特性,结果表明在加载交变信号情况下,器件结温会以直流信号的结温为中心周期振荡,振荡的频率与输入功率频率相同,但有明显的相位移动。同时,AC-LED在不同的输入功率和频率下的结温变化显示稳态时的平均结温和结温振荡幅度都随功率的增大而线性上升,但随着频率的增大而降低。     

高热流密度均温板的传热特性实验研究

针对目前严峻的电子组件散热形势,制造了高热流密度传热组件-均温板,并对其传热特性进行了研究.实验表明该均温板可承受非常高的热流密度.当加热功率达到170W时,热流密度超过了40W/cm2,均温板的上底面最高温度不超过85℃,从而表现出良好的均温和散热特性.热阻随加热功率的增大而减小,并逐渐趋于平缓.     

功率效应对功率LED热阻的影响

分析比较了在不同输入功率条件下1 W GaN基LED样品的热学特性,得出了有效热阻随加载功率的变化规律。基于瞬态热测试方法,讨论了结-环境热阻与输入功率之间的关系。加载电流为100~500 mA的区域随着电功率增加,有效热阻明显降低;当电流增至500 mA以上时,有效热阻减小幅度越来越小;而当加载电流为900~1 650 mA时,结-环境的热阻随着电功率的增加而缓慢升高。随着注入电功率的增加,在不同电流区域同一个样品的热阻变化趋势却是相反的,这个现象归因于串联电阻热耦合随输入功率的变化。该结果对分析功率型LED热特性具有一定参考价值。     

808 nm InGaAsP-InP单量子阱激光器热特性研究

从InGaAsP-InP单量子阱激光器结构分析入手,采用自行设计的热封闭系统对808 nm InGaAsP-InP单量子阱激光器热特性进行了研究.实验表明,在23-70℃的温度范围内,器件的功率由1.74 W降到0.51 W,斜率效率由1.08 W/A降到0.51 W/A.实验测得其特征温度T0为325 K.激射波长随温度的漂移dλ/dT为 0.44 nm/℃.其芯片的热阻为3.33℃/W.     

温度对InP激光器波长蓝移影响的分析

对AlGaInAs多量子阱FP TO-56半导体激光器在不同环境温度、相同发热量下测量出光波长的变化来分析器件波长温度变化系数;并对器件在室温、不同发热功率下的出光波长变化进行测量,分析计算得到器件热阻为183K/W.接着对器件进行不同高温应力试验,结果显示:环境温度从120℃增加至220℃时,器件峰值波长发生缓慢蓝移;当环境温度达到225℃时,器件波长发生明显蓝移,从试验前1 297nm蓝移至1 265nm;温度继续增加至235℃,波长蓝移至1 258nm,同时光谱模式间隔从试验前0.92nm降低至0.84nm,即模式有效折射率从3.66增加至3.77;温度继续增加至240℃,器件失效无光.其主要原因可能为:高温应力下,激光器外延材料中波导层、量子阱量子垒中的Al、Ga、In金属元素往有源区方向迁移使得量子阱有效禁带宽度以及有源区波导折射率增大.该试验结果为进一步分析器件高温下器件的失效机理以及改善器件高温性能提供试验基础.     

大功率LED纳米银烧结界面热阻和发光性能

利用纳米银烧结工艺制备大功率LED,重点探究了纳米银键合层的界面热阻及器件发光性能。通过将纳米银膏在不同温度下烧结,系统地研究了烧结温度对纳米银烧结后电阻率及接头剪切强度的影响,并分析了烧结后银膏的晶体结构及接头断口微观形貌。结果表明,接头键合强度和银膜导电率均随纳米银烧结温度的升高而增大。实验中还对比分析了纳米银烧结LED和传统锡银铜（SAC305）焊膏封装LED的界面热阻、结温以及发光性能。与纳米银烧结LED样品相比,传统焊膏封装LED的界面热阻和结温分别提高了8.9%和29.6%,说明纳米银键合层拥有更好的导热性并可及时为芯片散热降温。此外,通过高温老化实验,深入探讨了不同焊膏烧结LED的界面热阻及发光效率变化。实验表明,经过100℃下点亮500 h,纳米银和传统焊膏烧结LED样品的总热阻分别增大了0.03 K/W和4.28 K/W,但纳米银键合层界面热阻比老化前有所降低,同时纳米银烧结LED样品在不同电流下的发光效率始终高于传统焊膏封装LED样品。     

高效平板式两相回路热管的实验研究

本文讨论了平板式回路热管在三种不同情况下启动的温度分布,发现回路热管在平放且内部的汽液分布与正常运行时相同的情况最容易启动.讨论了不同功率下回路热管正常运行后的震荡性,发现回路热管随加热功率的增大出现了三次温度相对稳定与振荡的交替.在最大功率下的震荡可能是由于蒸发器底部到补偿室的热泄漏增大而导致.讨论了回路热管在相对稳定运行时的传热特性,发现当倾斜角为90°时,180 W的加热功率对应的蒸发器底部为79℃,此时回路的热阻为0.26K/W.     

C-mount封装激光器热特性分析与热沉结构优化研究

为了降低单管半导体激光器的结温、提高器件的散热效果,基于C-mount热沉的热特性分析提出了一种优化的台阶热沉结构,研究了单管激光器结温和腔面侧向温度分布曲线的影响。在热沉温度298 K和连续输出功率10 W的条件下,腔长为1.5 mm的典型C-mount封装结构激光器的结温为343.6 K,热阻为4.6 K/W。通过在典型C-mount热沉中引入台阶结构,使封装激光器的结温降低为333.8 K,热阻减小到3.5 K/W。计算表明,其输出功率可提高近20%。     

槽道尺寸对平板式环路热管性能的影响

设计开发了一套平板式环路热管,比较了2 mm×1.5 mm和1 mm×1 mm(高×宽)两种蒸气槽道环路热管在不同倾角和充液率下的性能。结果发现,两种蒸气槽道在相同条件下最低启动功率相同,但前者启动时间和过渡时间较后者短。稳定运行时,除充液率为55%且功率小于150 W外,其他情况下前者运行温度比后者低。变工况运行时,随功率的增大,温度后者变化很大,而前者变化较小,前者自适应能力强。对于传热特性,两种槽道环路热管的热阻都随功率的增大而逐渐减小,最后趋于平稳;对水平、充液率为55%的系统,功率较小时前者热阻较大,功率增大后,其值大幅减小,215W时仅为0.12℃/W。     

Nd∶YVO4/Nd∶GdVO4双波长激光器的功率均衡实验研究

实验研究了Nd∶YVO4/Nd∶GdVO4双波长激光器在不同抽运功率条件下,通过调节热沉温度达到功率均衡时的输出特性.实验结果表明:对于Nd∶YVO4/Nd∶GdVO4双波长激光器,当提高抽运功率,需要重新降低热沉温度达到功率均衡输出,降温幅度与抽运功率增加之比为11.23℃/W.与此同时,随着抽运功率和热沉温度的变化,双波长激光器的中心波长会出现小幅度的漂移,左峰波长随抽运功率增加的蓝移速率为0.056 nm/W,右峰波长随抽运功率增加的蓝移速率为0.054 nm/W.实验还发现功率均衡条件下激光器的输出总功率随抽运功率的增加而增加,拟合斜效率为8.7%,当抽运功率为5.58 W时,输出最大总功率达到115.7 mW.     

基于拉曼热测量技术的铜基复合物法兰GaN基晶体管的热阻分析

采用拉曼热测量技术结合有限元热仿真模型,分析比较新型铜/石墨复合物法兰封装与传统铜钼法兰封装的GaN器件的结温与热阻,发现前者的整体热阻比铜钼法兰器件的整体热阻低18.7%,器件内部各层材料的温度分布显示铜/石墨复合物法兰在器件中的热阻占比相比铜钼法兰在器件中的热阻占比低13%,这证明使用高热导率铜/石墨复合物法兰封装提高GaN器件热扩散性能的有效性.通过对两种GaN器件热阻占比的测量与分析,发现除了封装法兰以外,热阻占比最高的是GaN外延与衬底材料之间的界面热阻,降低界面热阻是进一步提高器件热性能的关键.同时,详细阐述了使用拉曼光热技术测量GaN器件结温和热阻的原理和过程,展示了拉曼光热技术作为一种GaN器件热特性表征方法的有效性.     

Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique

Self-heating in multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of AlGaN/GaN HEMT is estimated from the calibration curve of passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper.The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method.The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μm SiC substrate are 22.5 K/W and 7.2 K/W respectively,which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs.It is also experimentally proved that the extraction of the chiplevel thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

Si衬底GaN基LED的结温特性

结温是发光二极管的重要参数之一,它对器件的内量子效率、输出功率、可靠性及LED的其他一些性能有很大的影响。首次报道Si衬底GaN基LED的结温特性。利用正向压降法测量Si衬底上GaN基LED的结温,通过与蓝宝石衬底上GaNLED的结温比较,发现Si衬底GaNLED有更低的结温,原因归结为Si有更好的导热性。同时也表明:用Si作GaNLED的衬底在大功率LED方面具有更大的应用潜力。     

Thermal conductivity, dislocation density and GaN device design

The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10⁵ cm⁻², the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared.     

Macroscopic polarization and thermal conductivity of GaN

We theoretically investigated the effect of macroscopic polarization (sum of spontaneous and piezoelectric polarization) on the thermal conductivity of wurtzite GaN. Macroscopic polarization contributes to the effective elastic constant of the GaN and thus modifies the phonon group velocity. We used the revised phonon velocity to estimate the Debye frequency and temperature. Different phonon scattering rates were calculated as functions of the phonon frequency. The thermal conductivity of GaN was estimated using revised parameters such as the phonon velocity and phonon relaxation rate. The revised thermal conductivity at room temperature increased from 250 to 279 W m⁻¹ K⁻¹ due to macroscopic polarization. The method we developed can be used for thermal budget calculations for GaN optoelectronic devices.     

Effects of surface charges on phonon properties and thermal conductivity in GaN nanofilms

Surface charges can modify the elastic modulus of nanostructure, leading to the change of the phonon and thermal properties in semiconductor nanostructure. In this work, the influence of surface charges on the phonon properties and phonon thermal conductivity of GaN nanofilm are quantitatively investigated. In the framework of continuum mechanics,the modified elastic modulus can be derived for the nanofilm with surface charges. The elastic model is presented to analyze the phonon properties such as the phonon dispersion relation, phonon group velocity, density of states of phonons in nanofilm with the surface charges. The phonon thermal conductivity of nanofilm can be obtained by considering surface charges. The simulation results demonstrate that surface charges can significantly change the phonon properties and thermal conductivity in a GaN nanofilm. Positive surface charges reduce the phonon energy and phonon group velocity but increase the density of states of phonons. The surface charges can change the size and temperature dependence of phonon thermal conductivity of GaN nanofilm. Based on these theoretical results, one can adjust the phonon properties and temperature/size dependent thermal conductivity in GaN nanofilm by changing the surface charges.     

基于热阻网络的大功率LED热管散热研究

LED结温高一直是大功率LED发展的技术瓶颈,随着单位热流密度的不断攀升,在自然冷却条件下,单纯的直肋热沉散热方式已不能满足散热要求。应用热管技术设计了热管散热系统,对该系统的传热机理和传热路线进行分析,建立该系统对应的热网络模型,对各部分热阻进行分析与计算,求得总的理论总热阻,计算得出理论结温;同时应用有限元方法对该系统进行仿真分析,对LED模块（0.025 m0.025 m0.005 m）输入30 W 电功率,得出其仿真结温稳定在58.19℃,满足结温小于65℃的要求,说明应用热管的散热系统满足设计要求。由热阻网络模型计算得出的理论结温为57.43℃,与仿真结果相差0.76℃,其误差仅为1.31％,验证了理论分析计算的正确性,对实际工程中热设计具有指导意义。     

GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理

提出了一种新型GaN异质结高电子迁移率晶体管在强电磁脉冲下的二维电热模型,模型引入材料固有的极化效应,高场下电子迁移率退化、载流子雪崩产生效应以及器件自热效应,分析了栅极注入强电磁脉冲情况下器件内部的瞬态响应,对其损伤机理和损伤阈值变化规律进行了研究.结果表明,器件内部温升速率呈现出"快速-缓慢-急剧"的趋势.当器件局部温度足够高时(2000 K),该位置热电子发射与温度升高形成正反馈,导致温度急剧升高直至烧毁.栅极靠近源端的柱面处是由于热积累最易发生熔融烧毁的部位,严重影响器件的特性和可靠性.随着脉宽的增加,损伤功率阈值迅速减小而损伤能量阈值逐渐增大.通过数据拟合得到脉宽τ与损伤功率阈值P和损伤能量阈值E的关系.