退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。     

退火温度对TiO_2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备(001)高活性晶面主导的TiO_2纳米片薄膜,利用循环伏安法在TiO_2纳米片薄膜上沉积CdSe颗粒,制备了TiO_2/CdSe纳米片异质结薄膜。分别在150、250、350、450℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、X射线光电子能谱分析仪(XPS)、紫外-可见(UV-Vis)分光光度计以及电化学工作站对不同温度退火后的TiO_2/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明:六方相CdSe纳米颗粒均匀包覆在TiO_2纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO_2纳米片表面的Se元素与Cd元素发生氧化;TiO_2/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO_2/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO_2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO_2/CdSe纳米片异质结薄膜的最佳退火温度为150℃,填充因子为0.77,光电转换效率达到3.12%。     

退火温度对TiO2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备（001）高活性晶面主导的TiO₂纳米片薄膜,利用循环伏安法在TiO₂纳米片薄膜上沉积CdSe颗粒,制备了TiO₂/CdSe纳米片异质结薄膜。分别在150、250、350、450 ℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、X射线光电子能谱分析仪（XPS）、紫外-可见（UV-Vis）分光光度计以及电化学工作站对不同温度退火后的TiO₂/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明：六方相CdSe纳米颗粒均匀包覆在TiO₂纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO₂纳米片表面的Se元素与Cd元素发生氧化;TiO₂/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO₂/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO₂/CdSe纳米片异质结薄膜的最佳退火温度为150 ℃,填充因子为0.77,光电转换效率达到3.12%。     

模板法制备CdSe纳米材料及其光电性能（英文）

采用电化学沉积法,在阳极氧化铝(AAO)模板中成功制备出CdSe纳米管和纳米线。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射分析(XRD)和能量色散X射线光谱仪(EDS)对材料的形貌、结构和元素组成进行了表征。借助紫外-可见吸收光谱等对材料光催化活性进行了研究。结果表明:通过控制沉积电量可成功制备CdSe纳米管和纳米线;CdSe纳米材料为立方晶型与六方晶型的混合,经350℃退火处理后,CdSe纳米材料中由立方晶型向六方晶型转变,光照开路电位差值明显增强,在0 V(vs SCE)电位下的光照电流密度也有所提高,光电转换性能增强;CdSe纳米线的吸收边在710 nm左右,禁带宽度约为1.85 eV,CdSe纳米管相对于CdSe纳米线具有更高的光电转换性能和光催化活性,经7 h光照后,罗丹明B降解效率高达53.93%。另外,本文还讨论了CdSe纳米材料在AAO模板孔壁的生长机理。     

表面活性剂对CdSe量子点荧光性能的影响

通过添加不同类型的表面活性剂在水相中制备了CdSe量子点。用透射电子显微镜(TEM)、X射线衍射(XRD)、X-射线光电子能谱(XPS)对其进行了表征,并用紫外-可见(UV-Vis)和荧光(PL)分光光度法研究了不同类型的表面活性剂对CdSe量子点吸收光谱和荧光光谱的影响。结果表明,加入长链的非离子型和阴离子型表面活性剂制备的CdSe量子点颗粒只有几个纳米,分散性好,量子点的荧光强度也有明显的增强,而加入阳离子表面活性剂制备的量子点颗粒团聚明显,其荧光出现淬灭。     

掺杂纳米氧化铈紫外屏蔽材料的表征与性能

采用共沉淀法制备了氟锶、氟钙掺杂的纳米氧化铈.用X射线衍射(XRD)、扫描电子显微镜(SEM)和紫外-可见(UV-vis)光谱对所制备样品的物相组成、晶粒大小、形貌、紫外屏蔽性能进行了表征.XRD分析表明,氟锶、氟钙阴阳离子共掺杂的CeO2为立方萤石结构,共掺杂阴阳离子使CeO2的晶格常数增大.SEM结果表明,掺杂后的氧化铈均为球形纳米颗粒团聚物.紫外可见(UV-Vis)光谱表明,共掺杂氧化铈的紫外吸收边红移,紫外屏蔽性能增强.     

带坑WO3单晶纳米片的合成与光学性能

以介孔二氧化硅(SBA-15)为硬模板, 钨酸钠(Na₂WO₄•2H₂O)为钨源, 在酸性条件下, 用改进的浸渍-还原法合成了具有纳米坑结构的单晶片状WO₃材料. 用X射线衍射(XRD)、能量扩散X射线(EDX)、扫描电子显微镜(SEM)、高分辨透射电镜(HRTEM)和紫外-可见光区透射光谱(UV-Vis)等手段对产物的组成、形貌和光学性能进行了表征. 结果表明, 获得的产物为带有纳米坑结构的单晶片状WO₃, 且在近紫外-可见光区具有较高的透射率. 此外, 随着煅烧温度的升高, WO₃由单斜相转变为单斜相与正交相的混合相, WO₃薄膜的紫外-可见光透射率随煅烧温度升高而升高.     

半导体Si上电沉积Cu-Co颗粒膜及其巨磁电阻效应

采用电化学沉积方法在半导体Si上制备Cu-Co金属颗粒膜. XRD测试结果表明制备态的薄膜形成了单相亚稳态面心合金结构, 薄膜经退火后, XRD谱图中出现了析出的纯金属Co的衍射峰, 这表明薄膜在退火过程中发生了相分离. TEM测试结果也进一步证实了磁性的Co颗粒从非磁性的铜基体中析出. 随着退火温度的增加, 颗粒膜巨磁电阻(GMR)效应不断增大, 当退火温度为450 ℃时, Co0.20Cu0.80薄膜的巨磁电阻效应达到最大, 磁阻率为8.21％. 之后, 磁阻率又随退火温度的升高而降低. 退火前后样品磁滞回线的变化表明薄膜中发生了从超顺磁性到铁磁性的转变, 矫顽力、剩余磁化强度和饱和磁化强度均随退火温度的增高而逐渐增大. 超顺磁性颗粒的作用导致了GMR－H与M－H曲线的不同.     

Sb掺杂ZnSnO_3透明导电薄膜:制备与性能(英文)

采用溶胶-凝胶法(Sol-Gel)和旋涂法制备了未掺杂的ZnSnO3薄膜和掺入不同物质的量的Sb的ZnSnO3薄膜。采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、X射线光电子能谱(XPS)、霍尔效应仪(Hall)以及紫外-可见光(UV-Vis)等表征了热处理后薄膜的晶相、微观形貌、晶格缺陷、电学性能以及紫外-可见光透过率。结果表明:所有薄膜都是ZnSnO3结构;与未掺Sb的ZnSnO3薄膜相比,掺入Sb后的ZnSnO3薄膜的电阻率都有不同程度的降低,其中掺入8mol%Sb的薄膜具有最低的电阻率0.96Ω·cm;缺陷研究表明:Sb的掺入使得晶格中的间隙锌离子含量增加,这有利于薄膜电阻率的降低;薄膜的紫外-可见光(UV-Vis)表明:在波长大于475 nm的可见光范围内,掺入Sb的ZnSnO3薄膜的可见光透过率都在80%以上。     

丝网印刷法制备纳米银线透明导电薄膜

以高纯纳米银线作为导电介质,采用低成本丝网印刷法在普通透明玻璃基底上制备纳米银线薄膜层。经低温退火处理后,采用冷场发射扫描电子显微镜对薄膜的形貌进行表征;分别采用紫外可见分光光度计和四探针测试仪对薄膜的光学透过率和导电性能进行测试。实验系统研究了印刷浆料中纳米银线的含量、印刷层数和退火温度对薄膜的光学透过率和导电性能的影响。当印刷浆料中纳米银线的含量为3%(w/w),印刷层数达到3层,经低温275℃退火后,可制备出光电性能良好的纳米银线薄膜,该薄膜最大可见光透过率为39.4%,表面方块电阻仅为25.6Ω·□~(-1)。     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

Synthesis,characterization and size dependent energy band gap of binary CdSe quantum dot and its nanoparticle film

Nanocrystals provide a confinement effect for nanoscale engineering. In this work the cadmium selenide quantum dot and its nanoparticle films have been deposited by chemical bath deposition method (CBD). Effects of deposition time, pH and annealing operation on the optical and structural of CdSe nanoparticle film were studied. The energy band gap, structure and morphology of the samples are investigated by X-ray diffraction (XRD), UV-Vis spectrometer and scanning electron microscope (SEM). It was found that the optical band gap, nanoparticle size and thin film configuration are changed by varying pH, deposition time and annealing operation.     

Structural and magnetic properties of nano-crystalline FeCoNiN thin films

Iron cobalt nickel nitride (FeCoNiN) thin films are prepared by sol-gel spin coating route. The structural, magnetic and surface properties of the thin films are evaluated. The crystalline nature of thin films was enhanced upon annealing, leading to increased crystallite size. The X-ray diffraction shows mixed phases with crystallite size in the range of 20–26.93 nm. Thin films show ferromagnetism at room temperature. Coercivity and saturation magnetization are in the range of 642–716 Oe and 2.5–7.5 emu/cm³ respectively. Both coercivity and saturation magnetization increased with annealing of thin films. Magnetic properties are related to the crystallinity of thin films. The increase in crystallite size results into an increase of magnetic properties. Rectangular shaped particles are seen on the surface of thin films. The same type of grains can be seen on the surface of thin films which confirmed the formation of FeCoNiN as predicted by XRD. These novel thin films might be used in memory devices and optoelectronic applications.     

CuInS2：两步电沉积制备及性能

采用恒电位沉积法制备铜铟合金预制膜,并存管式炉中通过固态源蒸发硫化预制膜得到CuInS:薄膜.通过扫描电镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)对CuInS2薄膜的表而形貌、截面厚度、成分组成和薄膜的组织结构进行了研究,并利用紫外可见光吸收谱仪(UV-Vis)研究了不同硫化温度对CuInS:薄膜的形貌及其光学吸收性质的影响.结果表明:不同的退火温度能够影响CuInS:薄膜的表面形貌以及带隙的大小,从而影响其光学吸收特性.     

Influence of nanoparticle surface functionalization on the thermal stability of colloidal polystyrene films

The installation of large scale colloidal nanoparticle thin films is of great interest in sensor technology or data storage. Often, such devices are operated at elevated temperatures. In the present study, we investigate the effect of heat treatment on the structure of colloidal thin films of polystyrene (PS) nanoparticles in situ by using the combination of grazing incidence small-angle X-ray scattering (GISAXS) and optical ellipsometry. In addition, the samples are investigated with optical microscopy, atomic force microscopy (AFM), and field emission scanning electron microscopy (FESEM). To install large scale coatings on silicon wafers, spin-coating of colloidal pure PS nanoparticles and carboxylated PS nanoparticles is used. Our results indicate that thermal annealing in the vicinity of the glass transition temperature T(g) of pure PS leads to a rapid loss in the ordering of the nanoparticles in spin-coated films. For carboxylated particles, this loss of order is shifted to a higher temperature, which can be useful for applications at elevated temperatures. Our model assumes a softening of the boundaries between the individual colloidal spheres, leading to strong changes in the nanostructure morphology. While the nanostructure changes drastically, the macroscopic morphology remains unaffected by annealing near T(g).     

TiO2介孔薄膜的制备及紫外光电响应性质

采用蒸发诱导自组装法制备了高度有序的TiO2介孔薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等分析手段对其进行了表征. 结果表明, 所得样品的孔径约为5 nm, 孔道规则, 且骨架为纯锐钛矿结构. 紫外-可见光谱(UV-Vis)的表征结果表明, 制备的TiO2介孔薄膜对波长小于380 nm的紫外线有很强的吸收. 对TiO2介孔薄膜的I-V(电流-电压)特性进行了表征, 发现加光后其I-V曲线由暗态时的肖特基特性转变为欧姆特性, 表明TiO2介孔薄膜对紫外光有很敏感的光电响应.     

Structure and morphology of nanostructured zinc oxide thin films Prepared by dip-vs. spin-coating methods

In this study, we use dipping and spinning methods to coat glass slides with sol-gel ZnO thin films, composed of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol. The effect of the annealing temperature on the structural morphology and optical properties of these films is investigated. These ZnO films were preheated at 275 °C for 10 min and annealed either at 350, 450 or 550 °C for 60 min. As-deposited films, formed by amorphous zinc oxide-acetate submicron particles, are transformed into a highly-oriented ZnO after thermal treatment. The surface morphology, phase structure and optical properties of the thin films were investigated by scanning electron microscopy, X-ray diffraction (XRD) and optical transmittance. Both techniques produced nanostructured ZnO thin films with well-defined orientation. The annealed films were transparent in the visible range with an absorption edge at about 375 nm and a transmittance of ca 85–90% with an average diameter of 40 nm. XRD results show the film was composed of polycrystalline wurtzite, with a preferential c-axis orientation of (002) and a single sharp XRD peak at 34.40, corresponding to the hexagonal ZnO. The grain size is increased by the annealing temperature. Both coating techniques create sol-gel ZnO films with the potential for application as transparent electrodes in optic and electronic devices.     

Study of the structure and mechanical properties of hexagonal BaTiO3 thin films prepared by sol鈥揼el processing

Hexagonal barium titanate (HBT) thin films were prepared on borosilicate plate substrates via sol–gel method using the dip-coating process. The structure, texture and morphology of the thin film were analyzed by X-ray diffraction, atomic force microscopy, nanoindentation technique, and transmission electron microscopy. The results showed that the thin film annealed at 700?°C crystallized with BaTiO₃ hexagonal phase and traces of Ba₂TiO₄ (secondary phase). The nanoparticles and the RMS roughness of the sample treated at 700?°C presented high values when compared with those thermally treated at lower temperatures. The hardness and Youngs??modulus of the thin films increased with increasing in grain size, and the thin film annealed at 700?°C with crystallite size about 10?nm presented multiple “pop-in??events during nano-indentation loading curves. The annealing temperature, growth size and surface roughness were discussed in connection with the HBT mechanical properties.     

Low-temperature preparation of highly conductive thin films from acrylic acid-stabilized silver nanoparticles prepared through ligand exchange

The preparation of AcA-stabilized Ag nanoparticles and its application to make highly conductive thin films are reported. The AcA-stabilized Ag nanoparticles were prepared through a ligand exchange of original oleylamine (OLA)-coated Ag nanoparticles with acrylic acid (AcA), which acted as both an antisolvent and a modifying ligand during the ligand exchange process. Efficiencies of the ligand exchange as well as the properties of Ag nanoparticles were analyzed using various techniques including TEM, FT-IR, XPS, TGA, and UV-vis methods. The thin films were fabricated by annealing spin-coated AcA-stabilized Ag nanoparticles. Further, the effects of annealing temperature, time, and film thickness on both the film morphology and electrical conductivity have been investigated. In this work, due to the low boiling temperature of stabilizer (AcA) and adjustment of annealing conditions, high electrical conductivity was obtained for the Ag thin films. For example, when annealing at 175 °C for 30 min, a 70 nm thick film showed a maximum electrical conductivity of 1.12 × 10(5) S cm(-1). A conductive layer on a flexible polymer substrate (e.g., PET) sheet has been successfully prepared by annealing a spin-coated film at 140 °C for 30 min. The combined advantages of long-term stability of the AcA-stabilized Ag nanoparticles, low annealing temperature, and high conductivity of the prepared thin films make this relatively simple method attractive for applications in flexible electronics.