Si(111)衬底上生长有多缓冲层的六方GaN晶格常数计算和应变分析

利用卢瑟福背散射/沟道技术和高分辨率X射线衍射技术对在Si(111)衬底上利用金属有机化合物气相外延技术(MOVPE)生长有多缓冲层的六方GaN外延膜进行结晶品质计算、晶格常数计算和应变分析. 实验结果表明：GaN外延膜的结晶品质为χ_min=1.54%，已达到完美晶体的结晶品质(χ_min=1%—2%)；GaN外延膜的水平方向和垂直方向晶格常数分别为：a_epi＝0.31903nm，c_epi=0.51837nm，基本达到G 关键词： GaN 高分辨X射线衍射 卢瑟福背散射/沟道 弹性应变     

电子回旋共振等离子体增强化学气相沉积a-CFx薄膜的化学键结构

使用CHF₃和C₆H₆混合气体做气源,在一个电子回旋共振等离子体增强化学气相沉积装置中制备了氟化非晶碳(a-CF_x)薄膜.利用发射光谱研究了等离子体中形成的各种碳氟、碳氢基团随放电宏观参量的变化规律,对薄膜做了傅里叶变换红外光谱和X射线光电子能谱分析,证实等离子体中的CF₂,CF和CH基团是控制薄膜生长、碳/氟成分比和化学键结构的主要前驱物 关键词： 氟化非晶碳薄膜 电子回旋共振等离子体     

p型半导体金刚石膜的磁阻效应

在p型硅(100)衬底上,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长.用O₂等离子体刻蚀技术将金刚石膜刻蚀成长条形,利用四探针法在0—5T的磁场范围内测量了样品的磁阻.实验结果表明,p型异质外延金刚石膜可以产生较大的磁阻.在Fuchs-Sondheimer(F-S)薄膜理论的基础上考虑晶格散射、杂质散射和表面散射,通过求解Boltzmann方程,利用并联电阻模型研究了p型异质外延金刚石膜的磁阻效应,给出了磁阻和金刚石膜厚度、迁移率、空穴密度及磁场的关系.讨论了表面散射和价带形变对p型异质外延金刚石膜磁阻的影响,初步解释了p型异质外延金刚石膜产生较大磁阻的原因 关键词： 金刚石膜 异质外延 磁阻效应 电导率     

GaN基半导体在改变钙钛矿太阳能电池性能方面的理论分析

GaN基半导体在光电子、电子器件已具有重要应用,如何结合其良好的电学特性进行其他应用方面的理论或实验探索,是当前新的研究课题.本文利用SCAPS-1D软件从理论上计算了GaN在FTO/GaN/(FAPbI₃)_0.85(MAPbBr₃)_0.15/HTL电池结构中电子传输的理论机制.结果表明,引入GaN后,电池的开路电压,转换效率明显提高.通过进一步分析准费米能级分裂、界面电场、界面复合率、耗尽层厚度等因素的变化规律,分析了GaN的厚度和掺杂浓度对电池开路电压等器件参数的影响,并从GaN作为电子传输层的物理机制方面进行了讨论.     

HL-2A装置SDD软X射线PHA阵列实验结果

用软X射线脉冲高度分析(PHA)阵列系统获得了等离子体的电子温度剖面和电子速率分布的时间演化。测量结果表明,电子温度剖面在OH阶段较平缓,接近抛物线1.0×[1-(r/a)²]²分布;而在ECRH(功率0.8MW)阶段,等离子体中心(z＝0)电子温度上升了0.6keV,边缘(z＝30cm)处只上升了0.1keV,反映出ECRH功率沉积在等离子体中心区域;在ECRH期间有大量的高能电子产生,因而电子速率分布在ECRH期间显著改变;等离子体中心的高能电子的数量和能量都比等离子体边缘的增加更大,ECRH(～0.8MW)期间等离子体中心(z＝0)产生的高能电子的能量可达17keV。分析表明：在ECRH(纵场B_t=1.3T)放电期间,ECRH加热效果显著,ECRH的功率主要沉积在等离子体中心附近;电子温度剖面在ECRH阶段较OH阶段峰化;ECRH期间有大量的高能电子产生,电子速率分布被改变成为非麦克斯韦分布。     

四角对称晶场中4B1(3d3)态离子的磁相互作用及其自旋哈密顿参量研究

基于完全对角化方法，研究了⁴B₁(3d³)态 离子在四角对称晶场中的磁相互作用，分析了自旋哈密顿参量(b⁰₂, g_∥, g_⊥ , Δg)的微观起源.结果表明 ：在被考虑的大部分晶场区域，人们通常考虑的SO(spin-orbit)磁相互作用的贡献最为重要 ；然而，对于零场分裂参量b⁰₂而言，来自其他机理(包 括SS(spin-orbit)，SOO(sp in-other-orbit)，SO-SS-SOO)的贡献在大部分晶场区域超过了20％；在部分晶场区域，其 他机理的贡献甚至超过SO机理的贡献.详细地分析了Macfarlane 零场分裂参量b^{0₂ 近似三阶微扰理论的收敛性，结果表明：该理论在大部分晶场区域收敛性较差.讨论了3d3}态离子第一激发态²E_g分裂的微观起源.并利用 群论方法解 释了在C_4v和C_3v对称晶场中²E_{g< /sub>态分裂的不同机理. 关键词： 4B1(3d³)态离子')" href="#">⁴B1(3d³)态离子 磁相互作用 自旋哈密 顿参量 完全对角化方法(CDM) 微扰理论方法(PTM)}     

电场对GaN/g-C3N4异质结电子结构和光学性质影响的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法研究了GaN/g-C₃N₄异质结的稳定性、电子结构、光学性质及功函数,同时考虑了电场效应.结果表明:GaN/g-C₃N₄范德瓦耳斯异质结的晶格失配率(0.9%)和晶格失配能极低(-1.230 meV/?~2,1?=0.1 nm),说明该异质结稳定性很好,且该异质结在很大程度上保留了GaN和g-C₃N₄的基本电子性质,可作为直接带隙半导体材料.同时,GaN/g-C₃N₄异质结在界面处形成了从GaN指向g-C₃N₄的内建电场,使得光生电子-空穴对可以有效分离,这有利于提高体系的光催化能力.进一步分析可知,外加电场使GaN/g-C₃N₄异质结的禁带宽度有着不同程度的减小,使得电子从价带跃迁至导带更加容易,有利于提高体系的光催化活性;此外,当外加电场高于0.3 V/A以及低于-0.4 ...     

电子温度各向异性对螺旋波等离子体中电磁模式的传播及功率沉积特性的影响

采用考虑粒子温度各向异性热等离子体介电张量模型,借助磁化、均匀密度分布等离子体中电磁波的一般色散关系,在低磁场、低气压螺旋波等离子体典型参量条件下,理论分析了电子温度各向异性对电磁模式传播特性和角向对称模功率沉积的影响.研究结果表明:对于给定的纵向静磁场B₀(或波频率ω),存在一个临界波频率ω_cr(或纵向静磁场B_0,cr),当ω>ω_cr(或B₀0,cr)时,电子回旋谐波遭受的阻尼开始显著增大;相比粒子温度各向同性情形,粒子温度各向异性彻底改变了波的传播特性,即相位常数和衰减常数均出现峰值现象;在考虑电子有限拉莫尔半径效应和电子温度各向异性情形下,Trivelpiece-Gould (TG)波碰撞阻尼在整个电磁波功率沉积中占据主导地位,电子纵向温度T_e,//存在某一临界值,在此临界值处TG波功率沉积出现峰值P_abs,TG,且随着T_e,⊥/T_e,//的减小,...     

直流偏置对射频容性耦合放电特性的影响

直流偏置能较好抑制射频容性耦合等离子体(radio frequency capacitively coupled plasma, RF-CCP)表面充电效应, 但仍存在其对RF-CCP放电参量影响规律不明确, 电源对参量控制复杂等问题. 构建了直流源与射频源的板-板结构RF-CCP仿真模型, 在射频源基础上施加负直流源, 研究直流偏置对RF-CCP放电特性影响, 并比较射频与直流偏置对放电参量影响差异. 结果表明, 无直流源时, 周期平均电子密度N_{e, ave}, 周期平均电子温度T_{e, ave}均为对称分布, N_{e, ave}呈现两端小、中间大的凸函数分布, T_{e, ave}在距极板4 mm以内鞘层区均有陡然上升, 极大值出现在距极板1 mm左右处; 直流源会使等离子体主体区N_{e, ave}升高并发生偏移, 直流源侧N_{e, ave}降低, 对侧N_{e, ave}增加, 且对侧增加速率较快. 直流偏置可改善单侧电子温度与电子通量, 但提高电子密度能力弱于射频源. 实际工程中, 若欲提高单侧电子温度与电子通量, 应施加直流源, 若提高整体电子密度, 应提高射频源功率.      

α-Al2O3单晶中Fe3+离子的电子顺磁共振

本文对α-Al₂O₃单晶体中Fe³⁺离子在室温下,X波段进行了电子顺磁共振研究,发现Fe³⁺离子实际上占据四种磁性不等价晶位。在同一氧离子层间的两种晶位上的Fe³⁺离子具有相同的自旋哈密顿参量,而不同氧离子层间的晶位上的Fe³⁺离子具有不同的自旋哈密顿参量,两种自旋哈密顿参量为:(1)g_‖=2.001,g_⊥=2.003,D=1679 关键词：     

Characterization of microwave plasma generated in inhomogeneous magnetic field

The paper is devoted to the investigation of the electron cyclotron resonance (ECR) discharge in the decreasing magnetic field in the pressure range from 0.02 Pa to 90 Pa and the absorbed microwave power from 50 W to 400 W. For a discharge characterization we used the floating potentialU _fl and the saturated ion current densityi _sat ⁺ . The influence of the substrate holder presence on the plasma microparameters was studied. It was shown that for the substrate holder located near ECR at pressures below 0.3 Pa mainly the magnitude ofU _fl strongly depends on the pressurep, the absorbed microwave powerP _a, and the position of the substrate holder with respect to ECR. The values ofU _fl in the plasma in which the substrate holder is inserted strongly differ from those in the plasma without the substrate holder.U _fl of low pressuresp<0.05 Pa achieves high positive values of about +50 V and this results in sputtering of chamber walls.     

Characterization of compact bright soft X-ray source based on picosecond laser plasma

Radiation emission of silicon and aluminum plasmas produced by 40-ps laser pulses with peak intensity above 10¹⁴ W/cm² was studied. High-resolution soft X-rayspectra of H-like and He-like ions were analyzed to determine plasma parameters. We compared the line shape of resonance transitions and their intensity ratios to corresponding dielectronic satellites and the intensities of the intercombination lines of He-like ions with the results of model calculations. Such comparisons gave average values of the electron number density N_e=(1-1.9)×10²¹ cm^-3 and the electron temperature T_e=460–560 eV for Si plasmas and about 560 eV for Al plasmas produced by the first and the second laser harmonics. The plasma size is about 100 μm. According to our estimations, more than 10¹² photons were produced within the resonance line spectral width and in the solid angle 2π during the total decay period. PACS 41.50.+h; 52.25.Os; 52.50.Jm     

Langmuir probe and optical emission spectroscopy studies for RF magnetron sputtering during TiON thin film deposition

Low-pressure plasma of gas mixture of Ar, O₂ and N₂ generated by RF magnetron sputtering was characterized by Langmuir probe and optical emission spectroscopy (OES). The electron temperature (T_e), ion density (n_i) and electron energy distribution function (EEDF) in Ar-O₂-N₂ plasma atmosphere were calculated from I-V characteristic of Langmuir probe. Boltzmann plot method was applied for calculating the vibrational temperature (T_vib) of the second positive system of N₂ (N₂SPS) in Ar-O₂-N₂ plasma. The T_e, n_i, EEDF and T_vib in Ar-O₂-N₂ plasma were studied as a function of O₂ percentages. It was found, the T_vib increased from 0.47 eV to 0.55 eV as the oxygen percentage in Ar-N₂-O₂ plasma increased from 10% to 40%. Further, the T_e increased from 1.6 eV to 3 eV as the O₂ concentration increased from 10% to 40%.     

Influence of Plasma Resistance and Fluctuation on Probe Characteristics in Detached Recombining Plasmas

In order to find the causes of the strong anomaly of current‐voltage characteristics of Langmuir probe observed in detached recombining plasmas in a linear divertor plasma simulator, NAGDIS‐II, we have investigated plasma resistance along a magnetic field and potential fluctuations in the detached recombining plasmas. Simple calculation on the ratio between the plasma length, at which plasma resistance and resistance of ion sheath formed around a probe tip become equal, and an electron collection length indicates that the evaluation of electron temperature T_e becomes inaccurate at T_e of less than 0.6 eV when plasma density and neutral pressure are 1.0 × 10¹⁸ m^—3 and 10 mtorr, respectively. The potential fluctuation in detached recombining plasmas was found to be so large compared to T_e/e, which can also modify the probe characteristics.     

Temperature Distributions Across the Plasma Layer of Planar Low Pressure Microwave Plasmas — A Comparative Investigation by Optical Emission Spectroscopy

Nowadays low temperature non-equilibrium plasmas received considerable attention in very different fields of plasma processing. The subject of the present paper is the comparative measurement of neutral gas temperature and optical excitation temperature to analyze the temperature distributions across the plasma layer of H₂ non-equilibrium plasmas (p = 0.2 – 1.5 kPa) with small admixtures of hydrocarbons in a novel planar microwave plasma source (2.45 GHz) used for plasmachemical deposition purposes by means of optical emission spectroscopy. Typical microwave power flux densities into the plasma lie within a range of 2 W cm^?2 to 20 W cm^?2. Results of neutral gas temperature measurements derived from H_α line Doppler profiles are compared with rotational temperatures of H₂ and N₂ molecules. The neutral gas temperature (800–1700 K) corresponds to the rotational temperature of the H₂ molecules (Fulcher band, R 0–0 branch) but shows a more distinct spatial gradient. The rotational temperature of admixtured N₂ molecules (2000–3000 K) is much more higher although Boltzmann distribution was ensured. The spatially resolved measured excitation temperature (1–3 eV) determined with the help of line intensity ratios of admixtured Ar well agrees with Langmuir probe measurements. The reported measurements as a whole demonstrate the feasibility of comparative investigations of different optically determined temperatures for expressive characterization of low pressure microwave plasmas.     

Stimulated brillouin scattering of electromagnetic ion cyclotron waves in a plasma

Using the fluid model for the nonlinear response of ions, we have studied the nonlinear scattering of an electromagnetic ion cyclotron wave off the ion acoustic wave in a plasma. The low frequency nonlinearity arises through the parallel ponderomotive force on ions and the high frequency nonlinearity arises through the nonlinear current density of ions. For a typical nonisothermal plasma (T _e/T _i∼10) the threshold for this instability in a uniform plasma is ∼1mW/cm². At power densities ≳10² W/cm², the growth rate for backscatter turns out to be ∼10⁴s⁻¹.     

Floating double probe in non‐Maxwellian plasmas: Determination of the electron density and mean electron energy

A theoretical study of the floating double probe based on the Druyvesteyn theory is developed in the case of non‐Maxwellian electron energy distribution functions (EEDFs). It is used to calculate the EEDF in the electron energy range larger than –e(V_f ? V_p) from the I–V double probe characteristics. V_f and V_p are the floating and plasma potential, respectively. The analytical distribution function corresponding to the best fit of EEDF in the energy range larger than e(V_f ? V_p) allows the determination of the total electron density (n_e) and the mean electron energy (<?_e>). The method is detailed and tested in the case of a theoretical Maxwell–Boltzmann distribution function. It is applied for experiments that are performed in expanding microwave plasmas sustained in argon. Analytical EEDFs determined by this method are compared with those measured by means of single probes under the same experimental conditions. A good agreement is observed between single and double probe measurements. Results obtained under different experimental conditions are used to define the best conditions to obtain reliable results by means of the double probe technique.     

Die Erzeugung von Seriengrenzkontinua mit Hilfe von Gleitfunken zur Absolutmessung im Vakuum-Ultraviolett

A lithium plasma is produced by discharging a 40 kV, 0,3 μF capacitor through a lithium-hydride-capillary (diameter 2 mm, length 20 mm) in vacuum (p～10^?4 Torr). During the first half-cycle (0,6 μs) Bremsstrahlung of Li III is observed in the visible and infrared, and the Lyman series of Li III together with the recombination continuum in the vacuum UV (100 Å). The high members of the Lyman series are broadened by Stark effect giving an electron density of about 6 · 10¹⁸ cm^?3. In the infrared the radiation is emitted from an optically thick plasma at a time when the free-free continuum in the visible is emitted from an optically thin plasma. Temporal development of electron temperatureT _e and electron density N_e has been measured from the absolute intensity in these spectral regions. Typical values ofT _e=230 000° K andN _e 5 · 10¹⁸ cm^?3 e.g. have been obtained. For these values the relaxation time for an ionisation equilibrium is short compared to the observation time. The complete ionisation of Li III has been checked by absorption measurements near 100 A. Thus the absolute intensity of the recombination continuum could be calculated. An experimental arrangement was built to measure simultaneously the time history of the intensity in the vacuum ultraviolet, in the visible, and infrared spectral regions.     

Impacts of fluorine on GaN high electron mobility transistors: Theoretical study

We investigate the role of fluorine (F) in GaN‐based high electron mobility transistors (HEMTs) with first principle calculations. Formation energy calculations of F in GaN and AlN reveal that energetically favored interstitial F (F_i) and substitutional F at N sites (F_N) could play important roles in the performance of HEMTs. F_i is responsible for positive threshold voltage (V_th) shift by forming F^– anion and depleting 2DEG carriers. The degradation of device performance at high temperature is ascribed to the defect energy state near conduction band edge of F_N. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical emission spectroscopy investigation of sputtering discharge used for SiOxNy thin films deposition and correlation with the film composition

The r.f. discharge of sputtering silicon target using argon-oxygen-nitrogen plasma was investigated by optical emission spectroscopy. Electronic temperature (T_e) and emission line intensity were measured for different plasma parameters: pressure (from 0.3 to 0.7 Pa), power density (0.6-5.7 W cm⁻²) and gas composition. At high oxygen concentration in the plasma, both T_e and the target self-bias voltage (V_b) steeply decrease. Such behaviour traduces the target poisoning phenomenon. In order to control the deposition process, emission line intensity of different species present in the plasma were compared to the ArI (λ = 696.54 nm) line intensity and then correlated to the film composition analysed by Rutherford Backscattering Spectroscopy.