共查询到19条相似文献,搜索用时 93 毫秒
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集成单电子晶体管的研究动态 总被引:3,自引:0,他引:3
随着微电子器件集成度的提高,芯片上的功能元件尺寸不断减小.国外(如日本东芝公司)已建立0-1μm生产线,国内也正研制0-35μm的集成电路.但进一步减小功能元件尺寸的更高集成度的芯片的性能将因量子涨落和散热等问题而非常不稳定,解决这些问题的出路在于选择功耗低并能抑制多种涨落的单电子晶体管.单电子晶体管因它的体积小、无引线集成和极低的操作功率等特点,其高度集成化可远远超越目前大规模集成化的极限并达到海森伯不确定原理设定的极限,是将来不可被取代的新型器件.单电子晶体管由一个量子点和两个分别与源和漏耦… 相似文献
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结合石墨烯场效应晶体管和机械谐振原理,研究了基于本地背栅石墨烯谐振沟道晶体管(RCT) 的高频机械信号直接读取方法.利用机械剥离法获得的石墨烯,提出了一种基于刻蚀技术的器件制备方法, 并实现了栅长和栅宽分别为1 μm的本地背栅RCT.实验结果表明,在室温下RCT的谐振频率范围为57.5–88.25 MHz.研究结果对加速石墨烯纳米机电系统和高频低噪声器件的应用有着重要作用.
关键词:
石墨烯
谐振沟道晶体管
纳米机电系统 相似文献
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基于γ射线辐照条件下单轴应变Si纳米n型金属氧化物半导体场效应晶体管(NMOSFET)载流子的微观输运机制,揭示了单轴应变Si纳米NMOSFET器件电学特性随总剂量辐照的变化规律,同时基于量子机制建立了小尺寸单轴应变Si NMOSFET在γ射线辐照条件下的栅隧穿电流模型,应用Matlab对该模型进行了数值模拟仿真,探究了总剂量、器件几何结构参数、材料物理参数等对栅隧穿电流的影响.此外,通过实验进行对比,该模型仿真结果和总剂量辐照实验测试结果基本符合,从而验证了模型的可行性.本文所建模型为研究纳米级单轴应变Si NMOSFET应变集成器件可靠性及电路的应用提供了有价值的理论指导与实践基础. 相似文献
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越来越多的人相信,发展新一代在原理上全新的电子器件是下一世纪电子工业的希望所在.在这一方面,近年来已有一个又一个的量子器件原型见诸报道;还有更多的设想和建议不断被提出来,引起人们浓厚的兴趣.现在,又有一种新型小尺寸器件--单电子晶体管在在向我们招手.根据这种器件的发展前景,有人甚至提出了单电子学这一崭新的学科.单电子晶体管是与库仑阻塞这一著名的物理现象联系在一起的. 相似文献
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当器件的尺度小型与电子的平均自由程相当时,电子的输运可以看作弹道输运。文章介绍了隧穿热电子晶体管输运放大器和电子能谱仪两种工作模式下的工作原理以及用共振隧穿热电子晶体管做成的记忆器,如果器件的尺寸进一步减小,电子的波动特性也必须考虑,文章介绍了研究这种器件中的输运特性的方法及量子干涉晶体管和量子反射晶体管的工作原理。 相似文献
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This paper reports that the n-type organic thin-film transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric.The properties of insulator and the growth characteristic of C60 film were carefully investigated.By choosing different source/drain electrodes,a device with good performance can be obtained.The highest electron field effect mobility about 1.15 cm 2 /(V·s) could reach when Barium was introduced as electrodes.Moreover,the C60 transistor shows a negligible 'hysteresis effect' contributed to the hydroxyl-free of insulator.The result suggests that polymer dielectrics are promising in applications among n-type organic transistors. 相似文献
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随绿色可持续发展观念的深入人心,研究人员致力于寻找天然有机材料应用于功能性电子器件.淀粉以其低廉的价格、丰富的来源和优异的机械性能进入了科研人员的视野.淀粉可由玉米、马铃薯、甘薯和葛根等含淀粉的物质中提取而得,一般不溶于水,在和水加热至一定温度时,则糊化成胶状溶液.本文通过旋涂法将玉米淀粉的胶状溶液旋涂至氧化铟锡玻璃表面,然后在30?C恒温环境中晾干制备成固态胶合状薄膜.以此薄膜作为固态电解质制备了氧化铟锌突触晶体管,并实现了生物神经突触的双脉冲易化、学习记忆能力、高通滤波等可塑性行为的仿真.本研究以玉米淀粉固态胶合薄膜作为电解质大大降低了氧化物薄膜晶体管固态电解质的成本,且该电解质无毒性、来源丰富,将为人工神经网络的开发提供一种可选择的元件. 相似文献
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在不同应力条件下,研究了AlGaN/GaN高电子迁移率晶体管高温退火前后的电流崩塌、栅泄漏电流以及击穿电压的变化.结果表明,AlGaN/GaN高电子迁移率晶体管通过肖特基高温退火以后,器件的特性得到很大的改善.利用电镜扫描(SEM)和X射线光电子能谱(XPS)对高温退火前、后的肖特基接触界面进行深入分析,发现器件经过高温退火后,Ni和AlGaN层之间介质的去除,并且AlGaN材料表面附近的陷阱减少,使得肖特基有效势垒提高,从而提高器件的电学特性.
关键词:
AlGaN/GaN高电子迁移率晶体管
肖特基接触
界面陷阱 相似文献
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Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS)transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)substrate and tested using 10 keV X-ray radiation sources.The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si).The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures. 相似文献
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半导体量子器件物理讲座 第二讲 高电子迁移率晶体管(HEMT) 总被引:1,自引:0,他引:1
文章从异质界面的三角势阱中二维电子气的形成入手,计算了二维电子气的量子化能级及其面电子密度,对HEMT器件材料结构参数的优化、器件的电荷控制模型I-V特性作了分析。 相似文献
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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide 下载免费PDF全文
Fabrication of ambipolar organic field-effect transistors (OFETs) is
essential for the achievement of an organic complementary logic
circuit. Ambipolar transports in OFETs with heterojunction
structures are realized. We select pentacene as a P-type material and
N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic
diimide (PTCDI-TFB) as a n-type material in the active layer of the
OFETs. The field-effect transistor shows highly air-stable ambipolar
characteristics with a field-effect hole mobility of
0.18~cm2/(V.s) and field-effect electron mobility of
0.031~cm2/(V.s). Furthermore the mobility only slightly
decreases after being exposed to air and remains stable even for
exposure to air for more than 60 days. The high electron affinity of
PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly
monolayer between the SiO2 gate dielectric and the organic
active layer result in the observed air-stable characteristics of
OFETs with high mobility. The results demonstrate that using the OTS
as a modified gate insulator layer and using high electron affinity
semiconductor materials are two effective methods to fabricate OFETs
with air-stable characteristics and high mobility. 相似文献
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J. Lusakowski W. Knap N. Dyakonova E. Kaminska A. Piotrowska K. Golaszewska M. S. Shur D. Smirnov V. Gavrilenko A. Antonov S. Morozov 《Physics of the Solid State》2004,46(1):138-145
Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation
is presented. Three groups of different transistors based on GaAs/GaAlAs or GaInAs/AlGaAs heterostructures are investigated
at liquid-helium temperatures and for magnetic fields of up to 14 T. The magnetic-field dependence of the transistor resistance
is used for evaluation of the electron density and mobility in the transistor channel. The electron mobility and concentration
determined from magnetotransport measurements are used for the interpretation of recently observed resonant detection of terahertz
radiation in 0.15 μm gate length GaAs transistors and for the determination of the parameters of other field-effect transistors
processed for resonant and voltage tunable detection of THz radiation.
From Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 138–145.
Original English Text Copyright ? 2004 by Lusakowski, Knap, Dyakonova, Kaminska, Piotrowska, Golaszewska, Shur, Smirnov, Gavrilenko,
Antonov, Morozov.
This article was submitted by the authors in English. 相似文献