F掺杂SnO2电子结构的模拟计算

采用基于密度泛函理论的平面波赝势方法对SnO₂:F体系的电子结构进行了第一性原理模拟计算.用广义梯度近似方法优化SnO₂:F体系的晶胞结构，计算了体系基态总能.通过确定F掺杂对O的优先替代位置，计算了SnO₂:F的能带结构、态密度、分波态密度.分析了F掺杂对SnO₂晶体的电子结构和晶体性质及光学吸收边的影响，从理论上得出光学吸收边发生蓝移.对不同掺杂量的体系电子结构进行了分析. 关键词： F掺杂 2')" href="#">SnO₂ 电子结构 态密度     

Heusler合金Li2AlX(X=Ga，In)的晶格动力学和电子特性

本文计算了Heusler合金Li₂AlGa和Li₂AlIn的晶格参数、体积模量、体积模量的一阶导数、 电子能带结构、声子色散曲线和声子态密度,并与密度泛函理论中的广义梯度近似计算结果进行比较. 计算的晶格参数与文献有很好的一致性. 两个Heusler合金的电子能带结构表明它们是半金属结构. 并利用声子色散曲线和声子密度图研究Heusler合金晶格动力学. Li₂AlGa和Li₂AlIn Heusler合金在基态呈现动力学稳定.     

Relaxation Processes at High Levels of Vibrational Excitation of Polyatomic Molecules in the Ground Electronic State

By the spectral and kinetic characteristics of the luminescence of vapors of polyatomic molecules (anthracene, anthraquinone, fluorenone) initiated by selective IR multiphoton excitation (IR MPE) of molecules in the ground electronic state S ₀ the relaxation processes proceeding under vibrational excitation of molecules to energies exceeding the energies of the lower excited electronic states have been investigated. The changes in the spectral and kinetic characteristics with increasing CO₂ laser energy density and vapor P _v and foreign gas pressure P _FG are analyzed. They are similar to the characteristics obtained for normal fluorescence of these molecules with changing vibrational energy E _vib content. On the basis of experimental data and model calculations it has been concluded that at the laser radiation densities used in the case of IR MPE the molecules reach energies considerably exceeding the energies of the electronic levels. It is shown that a nonadiabatic connection between the electronic states leads to the population of mixed electronic states isoenergetic to the vibrational levels of the ground electronic state and to emission of delayed luminescence spectrally identical to the normal luminescence of these molecules. It has been found that when high vibrational levels are populated, new relaxation channels, such as reverse electron relaxation, emission from high vibrational levels of the ground electronic state, and multiquantum vibrational energy transfer at collisions leading to a rapid establishment of vibrational equilibrium become important.     

Mg,Al掺杂对LiCoO2体系电子结构影响的第一原理研究

为了研究Mg, Al掺杂对锂二次电池正极材料LiCoO₂体系的电子结构的影响，进而揭示Mg掺杂的LiCoO₂具有高电导率的机理，对Li(Co, Al)O₂和Li(Co, Mg)O₂进行了基于密度泛函理论的第一原理研究. 通过对能带及态密度的分析，发现在Mg掺杂后价带出现电子态空穴，提高了电导，并且通过歧化效应（disproportionation）改变了Co-3d电子在各能级的分布，而Al掺杂则没有这些作用. O关键词： 2')" href="#">LiCoO₂ 电子结构 第一原理 电导     

S掺杂对锐钛矿相TiO2电子结构与光催化性能的影响

采用基于第一性原理的平面波超软赝势方法研究了掺杂不同价态S的锐钛矿相TiO₂的晶体结构、杂质形成能、电子结构及光学性质.计算结果表明硫在掺杂体系中的存在形态与实验中的制备条件有关;掺杂后晶格发生畸变、原子间的键长及原子的电荷量也发生了变化,导致晶体中的八面体偶极矩增大; S 3p态与O 2p态、Ti 3d态杂化而使导带位置下移、价带位置上移及价带宽化,从而导致TiO₂的禁带宽度变窄、光吸收曲线红移到可见光区.这些结果很好地解释了S掺杂锐钛矿相TiO₂在可见光下具有优良的光催化性能的内在原因.根据计算结果分析比较了硫以不同离子价态掺杂对锐钛矿相TiO₂电子结构和光催化性能影响的差别. 关键词： 2')" href="#">锐钛矿相TiO₂ S掺杂 第一性原理 光催化性能     

采用非绝热动力学模拟探究溶剂效应对桨-轮形状的给体-受体复合物的激发态弛豫动力学的影响

充分理解给体-受体复合物的激发态动力学在实验和理论上都具有非常重要的意义. 本文首次结合电子结构计算和非绝热动力学模拟,探索了最近合成的一个桨-轮形状的给体-受体复合物的光致动力学过程,该复合物由三个氟硼二吡咯基团和一个六氧杂并三苯构成. 根据计算结果,得出结论,桨-轮形状的给体-受体复合物共轭物在激发时将被提升到氟硼二吡咯片段的局部激发状态,然后发生超快局部激发电子态到电荷转移电子态的激子转移. 与先前实验工作中提出的光致电子转移机理不同,这种激子转移过程伴随着从氟硼二吡咯基团到六氧杂并三苯基团上的空穴. 此外,还发现溶剂效应在该体系的光致动力学中起着重要作用. 具体而言,强极性的乙腈溶剂加速了空穴转移动力学,这可以归因于溶剂对电荷转移状态的显著影响,即局部激发和电荷转移激子之间的能隙大大减小,而与此同时非绝热耦合增加,这两个因素都可以促进空穴转移过程. 目前的工作不仅为桨-轮形状的给体-受体复合物的潜在光诱导机制提供了有价值的见解,而且有助于未来设计具有更好光电性能的新型给体-受体复合物.     

Theoretical study of molecular properties of low-lying electronic excited states of H2O and H2S

Geometries, excitation energies, dipole moments and dipole polarisability tensor components of the ground and four lowest excited states ³ B ₁, ¹ B ₁, ³ A ₂, ¹ A ₂ of the H₂O and H₂S molecules were calculated at the CASSCF, CASPT2, CCSD and CCSD(T) level of approximation. Vertical excitation and equilibrium transition energies of these states, having the Rydberg character, are reported too. Properties of both molecules in the ground and in low lying excited states are compared and discussed from the point of view of their molecular electronic structure. Upon excitation we observe dramatic changes of dipole moments and polarisabilities with respect to the ground state. We stress the change of the polarity of H₂O in all excited states accompanied by the enhancement of the dipole polarisability by an order of magnitude. Large, even if less pronounced, are changes of electric properties of H₂S in its excited states. Dipole moments and dipole polarisabilities of ³ B ₁, ¹ B ₁ states of H₂S and H₂O behave quite analogously in comparison to their respective ground state. The general pattern of properties for both molecules in their ³ A ₂ and ¹ A ₂ excited states is more different due to a pronounced participation of the sulphur d-orbitals in these states of the H₂S molecule.     

外电场作用下二氧化硅分子的光激发特性研究

采用密度泛函B3P86和组态相互作用方法在6-311G**基组水平上计算了二氧化硅分子从基态到前5个激发态的跃迁波长、振子强度、自发辐射系数A_n0和吸收系数B_0n（n=1—5）.研究了外电场对二氧化硅分子激发态的影响规律. 结果表明,随外电场强度增大,最高占据轨道与最低空轨道能隙变小,占据轨道的电子易于激发至空轨道. 因而在外场作用下分子易于激发. 关键词： 2')" href="#">SiO₂ 激发态 外电场     

Analytical potential energy function for the electronic states 2^∏1/2 and 2^∏3/2 of O^x2 （x=＋1, -1）

The splitting of potential energy levels for ground state X^2∏g of O^x2 （x = ＋1,-1） under spin-orbit coupling （SOC） has been calculated by using the spin-orbit （SO） multi-configuration quasi-degenerate perturbation theory （SO-MCQDPT）. Their Murrell-Sorbie （M S） potential functions are gained, and then the spectroscopic constants for electronic states 2^∏1/2 and 2^∏3/2 are derived from the M S function. The vertical excitation energies for O^x2 （x = ＋1,-1） are v[O2＋1^（2∏3/2→X^2∏1/2）] =195.652cm^-1, and v[O2^-1（2^∏1/2 →X^2∏3/2）] =182.568cm^-1, respectively. All the spectroscopic data for electronic states 2^∏1/2 and 2^∏3/2 are given for the first time.     

高温超导体MgB2的电子结构研究

用第一性原理能带理论计算了高温超导体MgB₂的电子结构.计算得出的电子能带说明MgB₂是一种宽能带化合物,价带主要由Mg和B原子s和p的杂化形成.费米能级处的态密度N(E_F)是0.72(states/eV).根据这些结果,初步推断出MgB₂的超导电性的微观机制不可能是电子声子耦合的BCS模型,而是有待于探索的新机制 关键词： 高温超导体 电子结构     

内掺氮富勒烯N_2@C_(60)的几何结构和电子性质的密度泛函计算研究

采用密度泛函理论中的广义梯度近似对内掺氮富勒烯N2@C60的几何结构和电子性质进行计算研究.发现在N2@C60中,氮倾向以分子形式存在于C60中心处.键长分析、能级图、态密度图和电荷分析表明内掺氮分子对C60几何结构和电子结构带来的影响甚微.     

Zn1-xMnxS(001)稀磁半导体薄膜的能量稳定性、磁性和电子结构

通过基于广义梯度近似的总能密度泛函理论研究不同Mn掺杂浓度的ZnS(001)薄膜的电学和磁学特性. 计算单个Mn原子和两个Mn原子处于各种掺杂位置及不同的磁耦合状态时的能量稳定性.计算了单个Mn原子掺杂和两个Mn原子掺杂的ZnS(001)薄膜的态密度. 不同掺杂组态的p-d杂化的程度不同. 不同掺杂组态,Mn原子所处的晶场环境不同,所以不同掺杂组态的Mn的3d分波态密度峰的劈裂有很大的不同. 掺杂两个Mn原子时,得到三种稳定组态的基态都是反铁磁态. 分析了以上三种能量稳定的组态中,两个Mn原子在不同磁耦合状态下的3d态密度图. 当两原子为铁磁耦合时,由于d-d电子相互作用,使反键态的态密度峰明显加宽. 随着Mn掺杂浓度的增加,Mn原子有相互靠近,并围绕S原子形成団簇的趋势. 对于这样的组态,Mn原子之间为反铁磁耦合能量更低.     

Structure and stability of various states of the EuC and EuC2 molecules

B3LYP level density functional theory （DFT） and multiconfiguration self-consistent-field （MCSCF） level ab initio method calculations have been performed on the basis of relativistic effective core potentials to investigate the nature of EuC and EuC2 molecules. The computed results indicate that the ground states of EuC and EuC2 are ^12∑^＋ and SA2, respectively. Dissociation potential energy curves of the low-lying electronic states of EuC have been calculated using the MCSCF method, and the same level calculation on EuC2 indicates that the dissociation energy of EuC2 of ground state compares well with the available experimental data. The bond characteristic is also discussed using Mulliken populations.     

梯形化合物NaV2O4F电子结构的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理赝势平面波方法, 通过自旋极化的广义梯度近似(GGA)电子结构计算对梯形化合物NaV₂O₄F进行了研究. 考虑了四种假想的自旋有序态,计算结果表明该化合物的磁基态具有二维反铁磁(AFM)结构, 即沿梯阶和梯腿方向都表现为AFM作用. 能带结构显示NaV₂O₄F为绝缘体材料, 带隙约为1.0eV. 方锥体中的晶体场劈裂使得VO₄F方锥体中的 V^{4+ 关键词： 2O₄F')" href="#">NaV₂O₄F 梯形化合物 第一性原理计算 电子结构}     

Electronic energy levels of CsCdCl3

The excitation and emission spectra of CsCdCl₃ crystal grown by the Bridgman growth technique, are observed. Its dominant excitation spectra correspond to the transitions between the electronic energy levels of the face-shared [CdCl₆]⁴⁻ octahedron complexes with C_3v symmetry. With the help of the molecular orbital diagram of the [CdCl₆]⁴⁻ molecule complex, an approximate electronic energy level diagram of this crystal is constructed using one-electron approximation.     

HYBRID ORBITALS OF CARBON ATOMS IN THE D6hC36 MOLECULE UNDER THE ROTATING ELLIPSOID MODEL

The hybrid orbitals of carbon atoms in the D_6h C₃₆ molecule are studied using two rotating ellipsoid models. The model 1 is 1.66R for the short semi-axis and 2.34R for the long semi-axis, and the model 2 is 1.78R and 2.26R respectively, where R is the C-C bond length. By comparison,we think the model 2 to be more proper in revealing the electronic properties of the D_6h C₃₆ molecule. The component of s orbitals in the π states hybridized for each of the atoms is much larger than C₆₀, in which the s-orbit component is 0.0380 and the p-orbit is 0.9620. The most component is 0.2098 and the least is 0.0482 for model 1; the most is 0.1764 and the least is 0.0656 for model 2.     

Y掺杂SrTiO3晶体材料的电子结构计算

采用基于第一性原理的密度泛函理论平面波超软赝势法, 研究了Y掺杂SrTiO₃体系的空间结构和电子结构性质, 得到了优化后体系的结构参数, 掺杂形成能, 能带结构和电子态密度. 对比掺杂浓度为0125, 025, 033时,Sr_1-xY_xTiO₃和SrTi_1-xY_xO₃的掺杂形成能,发现Y替代Sr能形成更稳定的结构. 对Sr_1-xY_xTiO₃（x=0, 0125, 025, 033） 的结构进行了优化,结果表明Y替代Sr后, 随着掺杂浓度增大, 体系的晶格常数逐渐减小, 稳定性逐渐增强. 对不同掺杂浓度的Sr_1-xY_xTiO₃能带结构的计算结果表明：纯净的SrTiO₃是绝缘体, 价带顶在R点, 导带底在Γ点, 费米能级处于价带顶; 掺杂Y后, 费米能级进入到导带底中, 体系呈金属性;掺杂浓度越大,费米能级进入导带的位置越深,禁带宽度也近似变宽. 关键词： 3')" href="#">SrTiO₃ 电子结构 掺杂 VASP     

外掺非典型富勒烯C64Si的几何结构和电子性质计算研究

采用密度泛函理论（density functional theory, DFT）中的广义梯度近似（generalized gradient approximation, GGA）对非典型富勒烯C₆₄Si的几何结构和电子性质进行计算研究,发现在C₆₄Si可能稳定存在的四种同分异构体中,Si原子吸附在三个直接相邻五边形的公共原子处形成的外掺杂结构是热力学最稳定的结构,即文中定义的C₆₄Si-1,这和Ge等人对 Si原子在C_{28关键词： 64}Si')" href="#">C₆₄Si 64')" href="#">C₆₄ 外掺富勒烯 密度泛函理论     

PbWO4电子结构的密度泛函计算

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法模拟计算了PbWO₄晶体的本征能级结构.发现价带主要由O2p轨道组成,含有部分W5d轨道;导带主要由W5d和O2p的轨道组成.发现导带底由Pb6p_1/2的狭窄能级占有.禁带宽度和价带宽度分别约为4.8和4eV.计算结果很好地解释了实验得到的反射谱,并从理论上分析了PbWO₄晶体蓝光的发光模型. 关键词： 密度泛函 电子结构 4')" href="#">PbWO₄     

C20分子异构体的电子态

使用量子化学从头计算方法优化了C₂₀分子三种异构体（环形、碗形和笼形）的单重和三重电子态几何结构。从优化的几何结构出发，由二阶微扰（MP2）方法得到的单点能给出了一个不符合Hund法则的结果，也就是三种异构体的能量都是单重电子态的最低。使用UHF波函数给出了三种异构体的总电荷密度和静电势，结果显示在笼形和碗形结构的中心区域存在负电荷。最后，本文分析了环形结构的成键特征。