PbWO4电子结构的密度泛函计算

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法模拟计算了PbWO4 晶体的本征能级结构 .发现价带主要由O2p轨道组成 ,含有部分W 5d轨道 ;导带主要由W 5d和O2 p的轨道组成 .发现导带底由Pb6 p1/ 2 的狭窄能级占有 .禁带宽度和价带宽度分别约为 4.8和 4eV .计算结果很好地解释了实验得到的反射谱 ,并从理论上分析了PbWO4 晶体蓝光的发光模型     

PbWO4晶体电子结构的理论计算

采用相对论性的离散变分DV-Xα方法模拟计算了具有复杂晶体结构的PbWO₄晶体的本征能级结构,其价带顶主要由O 2p轨道组成,导带底主要由W 5d轨道构成;Pb 6s电子的绝大部分分布在距价带底～2eV处的窄带中,同时也有少量分布在价带;禁带宽度大约是4.4eV,计算结果与实验数据符合得较好. 关键词：     

XPO4(X=Lu, Y)电子结构的第一性原理研究

基于密度泛函理论(DFT)第一性原理对LuPO₄和YPO₄两种磷酸盐晶体的电子结构进行计算模拟.结果表明:LuPO₄的带隙为5.639 eV,YPO₄的带隙为4.884 eV.通过对态密度的分析得知LuPO₄的导带主要贡献来自Lu的5d态电子,费米能级附近价带主要由Lu的4f态和O的2p态电子贡献. YPO₄的导带主要贡献来自Y的4d态电子,价带顶的主要贡献来自于O的2p态电子.通过电荷密度和布局分析得知了材料内部原子间的电荷转移情况,进而对原子间成键情况进行了分析与讨论.     

LaPO4和ScPO4电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论的第一性原理平面波赝势方法,对LaPO₄和ScPO₄的能带结构、电子态密度及光学性质进行计算和分析.计算结果表明：LaPO₄的禁带宽度为5.646 eV,ScPO₄的禁带宽度为4.531 eV. LaPO₄晶体价带顶主要由P-3s、P-3p及O-2p态贡献,导带底主要是由La-5d态贡献;ScPO₄晶体价带顶主要由P-3s、P-3p及O-2p态贡献,导带顶主要是由Sc-3d态贡献.就光学性质而言,ScPO₄的静介电常数是2.03,比LaPO₄(1.92)的静介电常数大,体系极化能力较好.     

(α,β,γ)-Nb5Si3电子结构和光学性质研究

基于第一性原理的密度泛函理论赝势平面波方法,采用局域密度近似,计算了不同结构的α-Nb₅Si₃,β-Nb₅Si₃和γ-Nb₅Si₃的电子结构、态密度以及光学性质.计算结果表明,Nb₅Si₃费米能级附近价带主要是由Nb的4d轨道及Si的3s和3p轨道贡献,导带主要由Nb的4d轨道贡献;Nb₅Si₃的光学性质具有各向异性的特征,其零频介电常数ε₁（0）=207,折射率n₀=13;在15 eV以上的高能区表现为无色透明.     

FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜，并硫化合成FeS₂. 采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构. 结果表明，合成的FeS₂薄膜，在费米能级附近，有较强的Fe 3d态密度存在，同时，在价带谱中2—10eV处有强度较大的S 3p态密度存在；Fe的3d轨道在八面体配位场作用下分别为t_2g和e_g轨道，实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS₂价带结构中导带宽度约为2.4eV，导带上方仍存在第二能隙，其宽度约为2.8eV. 关键词： 磁控溅射 二硫化铁 X射线吸收近边结构 电子结构     

掺钇钨酸铅晶体缺陷的理论研究

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法，计算了掺钇PbWO₄ 晶体中多 种相关缺陷的电荷分布和不同团簇缺陷结合能，由能量最低原理发现［2(Y³⁺Pb)-V″_Pb］缺陷在各相关缺陷形式中最为稳定.并运用过渡 态方法计算了轨 道跃迁的激发能，算出掺Y后晶体中O2p→Y4d的跃迁能量为3.9eV，表明掺Y不会引起晶体中3 50nm和420nm吸收.从掺Y对PbWO₄晶体电子结构的影响来看，其作用机理与掺La 的情况也有较大差异. 关键词： 4晶体')" href="#">PbWO₄晶体 密度泛函 掺Y 态密度分布     

CuI晶体及其缺陷态电子结构的模拟

利用相对论密度泛函理论和嵌入分子团簇方法,模拟计算了具有闪锌矿结构的γ态CuI晶体及其缺陷态的电子结构。结果显示晶体的本征能级结构:价带顶主要由I5p和Cu3d轨道杂化组成,导带底由Cu4s轨道组成,禁带宽度为3.1eV,该结果与实验相符。在不同缺陷态的计算中,四面体间隙铜缺陷相对其他间隙缺陷更易于在晶体中形成,其中Cu3d→4s跃迁能量为3.2eV,推测与CuI晶体发光密切相关。     

TiO_2缺陷结构电子性质的第一性原理计算

本文采用第一性原理研究了O空位缺陷、Ti空位缺陷TiO_2的能带结构、总态密度、吸收谱.通过研究发现:与TiO_2超胞结构的能带相比,O空位缺陷体系的价带与导带能量均向低能区域移动,费米能级与导带底交错,呈现出n型半导体,Ti空位缺陷的TiO_2的费米能级与价带顶部的能级交错,为p型半导体材料.对于O空位缺陷TiO_2总态密度与分波态密度在低能区的态密度则主要由O的3s、3p轨道贡献的能量,而在费米能附近的态密度则主要由Ti的4d轨道贡献能量;Ti空位缺陷的态密度总态密度仍然由O的3s、3p和Ti的4d轨道贡献的能量;同时分析吸收光谱发现峰值下移较多的是钛缺陷体系,其原因在于Ti缺陷结构中未成键电子的相互作用.     

过渡金属W、Mn、V、Ti掺杂二维材料MoSi2N4的第一性原理计算

本文基于密度泛函理论(DFT)的第一性原理计算了W、Mn、V、Ti替位掺杂二维MoSi₂N₄后的几何结构、电子结构以及光学性质的变化.电子结构分析表明W、Mn、W、Ti替位掺杂二维MoSi₂N₄后的禁带宽度分别为1.806 e V、1.003 e V、1.218 e V和1.373 e V;四种过渡金属掺杂后MoSi₂N₄的带隙类型没有发生改变，均为间接带隙半导体;W掺杂后的杂质能级靠近价带顶，费米能级靠近价带顶，为p型半导体，杂质能级为受主能级;Mn掺杂后的杂质能级靠近导带底，费米能级靠近导带底，为n型半导体;V和Ti掺杂后杂质能级位于费米能级附近，为复合中心;光学性质分析表明，在2 e V～4 e V的能量区间内，W掺杂结构的吸收波长为336 nm，体系发生红移;Mn、V和Ti替位掺杂后的吸收波长分别为320 nm、358 nm和338 nm，且掺杂体系均发生蓝移.     

S掺杂对锐钛矿相TiO2电子结构与光催化性能的影响

采用基于第一性原理的平面波超软赝势方法研究了掺杂不同价态S的锐钛矿相TiO₂的晶体结构、杂质形成能、电子结构及光学性质.计算结果表明硫在掺杂体系中的存在形态与实验中的制备条件有关;掺杂后晶格发生畸变、原子间的键长及原子的电荷量也发生了变化,导致晶体中的八面体偶极矩增大; S 3p态与O 2p态、Ti 3d态杂化而使导带位置下移、价带位置上移及价带宽化,从而导致TiO₂的禁带宽度变窄、光吸收曲线红移到可见光区.这些结果很好地解释了S掺杂锐钛矿相TiO₂在可见光下具有优良的光催化性能的内在原因.根据计算结果分析比较了硫以不同离子价态掺杂对锐钛矿相TiO₂电子结构和光催化性能影响的差别. 关键词： 2')" href="#">锐钛矿相TiO₂ S掺杂 第一性原理 光催化性能     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

First-principles energy band calculation for undoped and N-doped InTaO4 with layered wolframite-type structure

The electronic structures of undoped and N-doped InTaO₄ with optimized structures are calculated within the framework of the density functional theory. Calculated lattice constants are in excellent agreement with experimental values, within a difference of 2%. The valence band maximum (VBM) is located near the middle point on the ZD line and the conduction band minimum (CBM) near the middle point on the DX line. This means that InTaO₄ is an indirect-gap material and a minimum theoretical gap between VBM and CBM is ca. 3.7 eV. The valence band in the range from −6.0 to 0 eV mainly consists of O 2p orbitals, where In 4d5s5p and Ta 5d orbitals are slightly hybridized with O 2p orbitals. On the other hand, the conduction band below 5.5 eV is mainly composed of the Ta 5d orbitals and the contributions of In and O orbitals are small. The band gap of N-doped InTaO₄ decreases by 0.3 eV than that of undoped InTaO₄, because new gap states originating from N 2p orbitals appear near the top of the valence band. This result indicates that doping of N atoms into metal oxides is a useful method to develop photocatalysts sensitive to visible light.     

The electronic structures of the core and valence ion states of metal oxides

SCF-Xα SW MO calculations on metal core ion hole states and X-ray emission (XES) and X-ray photoelectron (XPS) transition states of the non- transition metal oxidic clusters MgO₆^10?, AlO₄^5? and SiO₄^4? show relative valence orbital energies to be virtually unaffected by the creation of valence orbital or metal core orbital holes. Accordingly, valence orbital energies derived from XPS and XES are directly comparable and may be correlated to generate empirical MO diagrams. In addition, charge relaxation about the metal core hole is small and valence orbital compositions are little changed in the core hole state. On the other hand, for the transition metal oxidic clusters FeO₆^10?, CrO₆^9? and TiO₆^8? relative valence orbital energies are sharply changed by a metal core orbital or crystal field orbital hole, the energy lowering of an orbital increasing with its degree of metal character. Consequently O 2p nonbonding → M 3d-O 2p antibonding (crystal field) energies are reduced, while M 3d bonding → O 2p nonbonding and M 3d-O 2p antibonding → M 4s,p-O 2p antibonding (conduction band) energies increase. Charge relaxation about the core hole is virtually complete in the transition metal oxides and substantial changes are observed in the composition of those valence orbitals with appreciable M 3d character. This change in composition is greater for e _g than for t_2g orbitals and increases as the separation of the e_g crystal field (CF) orbitals and the O 2p nonbonding orbital set decreases. Based on the hole state MO diagrams the higher energy XPS satellite in TiO₂ (at about 13 eV) is assigned to a valence → conduction band transition. The UV PES satellites at 8.2 eV in Cr₂O₃ and 9.3 eV in FeO are tentatively assigned to similar transitions to conduction band orbitals, although the closeness in energy of the crystal field and O 2p nonbonding orbitals in the valence orbital hole state prevents a definite assignment on energy criteria alone. However the calculations do clearly show that charge transfer transitions of the e_g bonding → e_g crystal field orbital type would generally occur at lower energy than is consistent with observed satellite structure.A core electron hole has little effect upon relative orbital energies and is only slightly neutralized by valence electron redistribution for MgO and SiO₂. For the transition metal oxides a core hole lowers the relative energies of M3d containing orbitals by large amounts, reducing O → M charge transfer and increasing M 3d crystal field → conduction band energies. Large and sometimes overcomplete neutralization of the core hole is observed, increasing from CrO₆^9? to FeO₆^10? to TiO₆^8?. as the O → M charge transfer energy declines.High energy XPS satellites in TiO₂ may be assigned to O 2p nonbonding → conduction band transitions while lower energy UV PES satellites in FeO and Cr₂O₃ arise from crystal field or O 2p nonbonding → conduction band excitations. Our “shake-up” assignment for FeO₆^10?, CrO₆^9? and TiO₆^8? are less than definitive because no procedure has yet been developed to calculate “shake-up” intensities resulting from transitions of the type described. However the results do allow a critical evaluation of earlier qualitative predictions of core and valence hole effects. First, we find that the comparison of hole or valence state ionic systems with equilibrium distance systems of higher nuclear and/or cation charge (e.g. the comparison of the FeO₆^10? Fe 2p core hole state to Co₃O₄) is dangerous. For example, larger MO distances in the ion states substantially reduce crystal field splittings. Second, core and CF orbital holes sharply reduce O → M charge transfer energies, giving 2e_g → 3e_g energy separations which are generally too small to match observed satellite energies. Third, highest occupied CF-conduction band energies are only about 4–5 eV in the ground states, but increase to about 7–11 eV in the core and valence hole states of the transition metal oxides studied. The energetic arguments presented thus support the idea of CF and/or O 2p nonbonding → conduction band excitations as assignments for “shake-up” satellites, at least in oxides of metals near the beginning of the transition series.     

DFT study on electronic structures and optical absorption properties of C, S cation- doped SrTiO3

The effects of C cation and S cation doping on the electronic structures and optical properties of SrTiO₃ are investigated by density function theory (DFT) calculations. The calculated results reveal that the top of the valence band is predominately made up of the O 2p states for the pure SrTiO₃. When SrTiO₃ was doped with C cation and S cation, the top of the valence bands consists mainly of O 2p+C 2s hybrid orbitals and O 2p+S 3s hybrid orbitals, respectively. The band gap of SrTiO₃ is narrowed by the doping with C cation and S cation, especially for the C and S-codoped SrTiO₃. Moreover, the red shifts of the absorption edge are found by the calculated optical properties, which is consistent with reported experiment results. It is the explanation for their visible light respondency by the presence of C 2s and S 3s states on the upper edge of the valence band. All of these results can explain the good photocatalytic properties of C, S cation-codoped SrTiO₃ under visible light irradiation.      

First-principles study of structural,electronic, and optical properties of ZnSnO3

The structural, electronic, and optical properties of ZnSnO₃ were investigated using density functional theory within the generalized gradient approximation. The structure parameters obtained agree well with the experimental results. The electronic structures indicate that ZnSnO₃ is a semiconductor with a direct band gap of 1.0 eV. The calculated optical spectra can be assigned to contributions of the interband transitions from valence band O 2p levels to conduction band Sn 5s levels or higher conduction band Zn 3d levels in the low-energy region, and from O 2p to Sn 5p or Zn 4p conduction band in the high-energy region.     

Ab initio study of the electronic and atomic structure of the wolframite-type ZnWO4

Ab initio quantum chemistry calculations of the structural and electronic properties of monoclinic wolframite-type ZnWO₄ crystal have been performed within the periodic linear combination of atomic orbitals (LCAO) method using six different Hamiltonians, based on density functional theory (DFT) and hybrid Hartree-Fock-DFT theory. The obtained results for optimized structural parameters, band gap and partial density of states are compared with available experimental data, and the best agreement is observed for hybrid Hamiltonians. The calculations show that zinc tungstate is a wide band gap material, with the direct gap about 4.6 eV, whose valence band has largely O 2p character, whereas the bottom of conduction band is dominated by W 5d states.     

Ba0.5Sr0.5TiO3电子结构和光学性质的第一性原理研究

利用第一性原理研究了Ba_0.5Sr_0.5TiO₃的能带结构和光学性质.结果表明,导带和价带都来源于钛原子3d轨道和氧原子2p轨道的杂化.导带主要由钛原子的3d轨道贡献,价带主要由氧原子的2p轨道贡献.吸收系数为10⁵ cm^-1量级,且吸收主要集中在低能区.折射率为n（0）=2.1,结果与实验符合. 关键词： 第一性原理 能带结构 光学性质