Polarization-independent grating couplers for silicon-on-insulator nanophotonic waveguides

We propose the use of subwavelength structures in a waveguide grating to achieve polarization-independent coupling of light between an optical fiber and a silicon-on-insulator (SOI) optical waveguide. The subwavelength structure allows the mode effective indices of the TE and TM modes in the grating section to be precisely engineered. We calculate that coupling efficiency of over 64% is possible using the proposed design for polarization-independent coupling between single-mode optical fibers and SOI nanophotonic waveguides.     

Grating couplers for thick SOI rib waveguides

The use of grating couplers in high index contrast waveguides like silicon on insulator (SOI) offers several advantages over other coupling approaches, including better alignment tolerances and allowing for wafer-scale testing. The grating couplers were developed for nanometric SOI waveguides (Si-wires), and recently also for micrometric rib waveguides. In this paper we review our work in fiber-to-chip grating couplers for thick SOI rib waveguides, where a coupling efficiency of ?2.2?dB was demonstrated experimentally. We also discuss the use of grating couplers to improve optical throughput (étendue) of a planar waveguide Fourier-Transform (FT) spectrometer implemented in thick rib waveguides.     

Polarization-independent grating coupler for micrometric silicon rib waveguides

Grating couplers are a promising approach to implement efficient fiber-chip coupling. However, their strong polarization dependence makes dual-polarization operation challenging. In this Letter we propose, for the first time, a polarization-independent grating coupler for thick rib silicon-on-insulator (SOI) waveguides. Coupling efficiency is optimized by designing the grating pitch and duty cycle, without varying the bottom oxide thickness, which significantly simplifies practical implementation. Directivity of the grating coupler is enhanced by a high reflectivity layer under the bottom oxide after the selective removal of the Si substrate. Dual-polarization coupling efficiency of -2.8 dB is shown.     

High efficiency grating coupler between silicon-on-insulator waveguides and perfectly vertical optical fibers

A high-efficiency waveguide-to-fiber grating coupler for silicon-on-insulator waveguides was designed. Perfectly vertical fiber coupling is achieved by using an asymmetric grating structure to suppress the second-order Bragg reflection from the grating. The ability to use a perfectly vertical positioned optical fiber simplifies the packaging of the photonic integrated circuit. A coupling efficiency of 80% at a wavelength of 1.55 microm is obtained.     

Analysis of a widely tunable long-period grating by use of an ultrathin cladding layer and higher-order cladding mode coupling

A widely tunable long-period grating in single-mode fiber is analyzed by use of an ultrathin cladding layer and higher-order cladding mode coupling. The numerical simulation shows that a 225-nm tuning range in the newly designed ultrathin long-period grating (cladding thickness, 35 microm) with third-order cladding mode coupling can be obtained. The analyzed tuning range is seven times wider than those of the other known long-period gratings. We believe that the proposed highly sensitive long-period grating will be widely used as a gain-flattening filter for ultrawideband optical amplifiers and fast tunable filters in dynamic optical communication systems.     

Apodized fully-etched surface grating coupler using subwavelength structure for standard silicon-on-insulator waveguide

We design and demonstrate the fully-etched apodized grating couplers based on the silicon-on-insulator (SOI) platform using subwavelength structure for both transverse electric (TE) and transverse magnetic (TM) modes operation. The subwavelength grating (SWG) is used to engineer the refractive index using second-order effective medium theory (EMT). The whole designing procedure is given in details, especially a feasible and programmable method is developed to precisely manipulate the coupling strength of each grating cycle. A perfect Gaussian output beam can be synthesized for the TE mode operation, achieving a field overlap up to 98.3% with the Gaussian fiber mode. The simulated peak coupling losses are ?4.63 and ?2.99 dB for the TE mode and the TM mode, respectively, which are comparable with conventional shallowly etched grating couplers, realizing a fabrication simplification without performance penalty. The measured peak coupling loss is ?7.6 dB for the TE mode coupler with a 1 dB bandwidth of 45 nm, and ?6.1 dB for the TM mode coupler with a 1 dB bandwidth of 34 nm.     

Polarization beam splitter using a binary blazed grating coupler

A novel polarization beam splitter using a two-layer grating coupler is proposed and demonstrated. It can directly couple the normally incident light from fiber into two separate waveguides according to their polarization states while splitting them. It realizes high coupling efficiency and a good extinction ratio by using binary blazed grating couplers. The coupling length is less than 14 microm. The extinction ratio is better than 20 dB for both polarizations over a 40 nm wavelength range, and the coupling efficiencies for the two layers are 58% and 50%.     

High-index contrast grating based broadband out-coupler on SOI

An efficient broadband out-coupler on silicon-on-insulator (SOI) with high-index contrast grating (HCG) is proposed. The presence of a silicon-air (high-index contrast) grating on the top silicon layer in SOI allows a strong interaction between the guided mode and the grating. The broadband design of the out-coupler is presented by optimising the various grating parameters. The design analysis and simulation of such an out-coupler is performed with finite difference method. Coupling efficiency of 54% is achieved over an ultra-wide wavelength range from 1500 nm to 1650 nm.     

High-refractive-index measurement with an elastomeric grating coupler

An elastomeric grating coupler fabricated by the replica molding technique is used to measure the modal indices of a silicon-on-insulator (SOI) planar waveguide structure. Because of the van der Waals interaction between the grating mold and the waveguide, the elastomeric stamp makes conformal contact with the waveguide surface, inducing a periodic index perturbation at the contact region. The phase of the incident light is changed to match the guided modes of the waveguide. The modal and bulk indices are obtained by measuring the coupling angles. This technique serves to measure the high refractive index with a precision better than 10(-3) and allows the elastomeric stamp to be removed without damaging the surface of the waveguide.     

High-speed photorefraction at telecommunication wavelength 1.55 microm in Sn2P2S6:Te

We demonstrated for what is the first time to our knowledge photorefractive two-wave mixing in a bulk ferroelectric crystal using cw light at the telecommunication wavelength 1.55 microm. In the Te-doped ferroelectric semiconductor Sn2P2S6 with absorption constant <0.1 cm(-1) at 1.55 microm, grating recording times of 10 ms and a two-beam coupling gain of 2.8 cm(-1) have been measured at 350 mW power (intensity 440 W/cm(2)) without a necessity to apply an external electric field. With a moving grating technique, a maximal gain of 6.0 cm(-1) has been obtained.     

Modal coupling in fiber tapers decorated with metallic surface gratings

An interference-based scheme for fabricating periodic metal gratings on one side of the uniform waist of optical fiber tapers has been developed. Optical characterization of a 5 mm long, 511 nm period gold grating fiber taper with a 10 microm diameter reveals backward coupling to both guided and radiation modes that is explained by using an analytical mode-coupling analysis. A refractometer based on this grating taper has a high and constant sensitivity over a large refractive index operating range of 1 to 1.41.     

Dispersion tailoring and soliton propagation in silicon waveguides

The dispersive properties of silicon-on-insulator (SOI) waveguides are studied by using the effective-index method. Extensive calculations indicate that an SOI waveguide can be designed to have its zero-dispersion wavelength near 1.5 microm with reasonable device dimensions. Numerical simulations show that soliton-like pulse propagation is achievable in such a waveguide in the spectral region at approximately 1.55 microm. The concept of path-averaged solitons is used to minimize the impact of linear loss and two-photon absorption.     

Fabrication of freestanding nanoscale gratings on silicon-on-insulator wafer

We report a bottom-up process for the fabrication of freestanding nanoscale gratings on silicon-on-insulator (SOI) wafer. Freestanding membrane devices suffer deflection due to the residual stress of the buried oxide layer of SOI wafer. The deflection will affect the device shape and result in the fracture problem for devices fabricated on thin silicon membrane. The bottom-up process is developed to overcome the fabrication issue for thin silicon membrane gratings. The silicon handle layer is removed through back wafer etching of silicon, where the buried oxide layer acts as an etch stop layer. The grating structures are then defined on thin silicon device layer by electron beam lithography and generated by fast atom beam etching. The grating structures are finally released in vapor HF to form the freestanding nanoscale gratings. The freestanding linear/circular gratings, 1,500-nm period grating with the grating width of 200- and 850-nm period grating with the grating width of 100 nm, are successfully achieved on 260-nm silicon device layer.     

High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre

A high efficiency and broad bandwidth grating coupler between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre is designed and fabricated. Coupling efficiencies of 46\% and 25\% at a wavelength of 1.55~μ m are achieved by simulation and experiment, respectively. An optical 3~dB bandwidth of 45~nm from 1530~nm to 1575~nm is also obtained in experiment. Numerical calculation shows that a tolerance to fabrication error of 10~nm in etch depth is achievable. The measurement results indicate that the alignment error of ±2~μ m results in less than 1~dB additional coupling loss.     

Stratified waveguide grating coupler for normal fiber incidence

We propose a new stratified waveguide grating coupler (SWGC) to couple light from a fiber at normal incidence into a planar waveguide. SWGCs are designed to operate in the strong coupling regime without intermediate optics between the fiber and the waveguide. Two-dimensional finite-difference time-domain simulation in conjunction with microgenetic algorithm optimization shows that approximately 72% coupling efficiency is possible for fiber (core size of 8.3 microm and delta=0.36%) to slab waveguide (1.2-microm core and delta=3.1%) coupling. We show that the phase-matching and Bragg conditions are simultaneously satisfied through the fundamental leaky mode.     

Local coupling-coefficient characterization in fiber Bragg gratings

We propose a new method for characterizing the local parameters of fiber Bragg gratings. This method combines measurement of the complex impulse response by optical low-coherence reflectometry and reconstruction of the complex coupling coefficient by layer peeling. Application of the method to a nonhomogeneous grating shows that the local coupling coefficient can be precisely determined with an axial resolution below 20 microm and a maximum error of less than 5% for amplitude and phase, respectively.     

图形化Silicon-on-Insulator衬底上分子束外延生长可动GaN微光栅的研究

GaN材料作为第三代半导体材料,具有宽禁带、直接带隙、耐腐蚀等优点,是一种非常有前景的MOEMS材料。由于GaN的刻蚀目前尚未成熟,因此图形化外延生长法是一种较好的选择。本文基于SOI(silicon-on-insulator)基片,利用硅的微加工技术和图形化GaN分子束外延生长工艺,设计并加工了工作在太赫兹波段的、可以在二维方向上运动的SOI基GaN光栅。光栅周期为16μm,光栅宽度为6μm,峰值位置为25.901μm。通过仿真优化,设计的微驱动器在水平电压220V时,水平方向上的位移为±7.26μm;垂直方向加200V电压时,垂直位移2.5μm。为了研究在图形化SOI衬底上外延生长的InGaN/GaN量子阱薄膜的光学性能,用激光拉曼光谱仪对薄膜进行了光致发光光谱实验。实验结果表明,InGaN/GaN量子阱薄膜具有良好的发光性能,其发光范围为350~500nm,覆盖了紫外光到黄绿光。由于局域态效应与禁带收缩的作用,随着环境温度由10K升高至室温,薄膜的PL光谱的峰位呈现"S"形变化趋势。     

Analysis of ultra-small photonic large scale integrated circuits

A detailed study of a platform of ultra-small photonic large-scale integrated circuits was conducted. Bandgap structure calculations of silicon-on-insulator (SOI) based photonic crystals have been investigated. The photonic crystal consists of dielectric cylinders in air. Using the band structure calculations we obtained design parameters for the proposed structures. The coupling between the photonic crystal and a waveguide fabricated from SOI system has been analysed. It is shown that the optical coupling is improved by interfacing different types of spot-size converters (SSCs) between the SOI waveguide and the photonic crystal. Also, the possibility and limitations of silicon doped germanium and SOI photonic crystals to analyse the light guiding in the third dimension is discussed.     

In-fiber polymer-glass hybrid waveguide Bragg grating

A 1.2 microm (height) x 125 microm (depth) x 500 microm (length) microslot along a fiber Bragg grating was engraved across the optical fiber by femtosecond laser patterning and chemical etching. By filling epoxy in the slot and subsequent UV curing, a hybrid waveguide grating structure with a polymer core and glass cladding was fabricated. The obtained device is highly thermally responsive with linear coefficient of 211 pm/ degrees C.