四方晶系SBN晶体中位错光双折射像的理论计算和实验观察

本文计算了铌酸锶钡(SBN)晶体中沿光轴的位错双折射像的反衬,计算中考虑了光弹系数的各向异性,结果表明与各向同性计算相比刃位错双折射像中的花瓣有伸长的趋势,螺位错无反衬,并与实验结果作了比较。     

Phase sensitive x-ray diffraction imaging of defects in biological macromolecular crystals

Conventional x-ray diffraction topography is currently used to map defects in the bulk of protein crystals, but the lack of sufficient contrast is frequently a limiting factor. We experimentally demonstrate that this barrier can be circumvented using a method that combines phase sensitive and diffraction imaging principles. Details of defects revealed in tetragonal lysozyme and cubic ferritin crystals are presented and discussed. The approach enabling the detection of the phase changes of diffracted x rays should prove to be useful in the study of defect structures in a broad range of biological macromolecular crystals.     

Temperature dependence of microhardness of tetragonal hen-egg-white lysozyme single crystals

The mechanical properties of high-quality single crystals of tetragonal hen-egg-white lysozyme from hen egg white were investigated by the indentation method. The indentation marks were clearly observed on the crystal surface and elastic recovery did not occur. The micro-Vickers hardness of the crystals in the wet condition was observed to be 20?MPa at room temperature. To investigate deformation, the temperature dependence of the hardness was investigated from 278 to 308?K. The hardness strongly depended on the temperature above 290?K. From these results the deformation of lysozyme single crystals was explained in terms of dislocation mechanisms.     

X射线双晶衍射摇摆曲线本征半峰宽的理论计算

本文应用X射线衍射动力学理论,推导出Bragg衍射几何X射线双晶衍射反射率的数学表达式。多种晶体、不同衍射的摇摆曲线计算结果表明,σ偏振的摇摆曲线的峰值和积分强度均比π偏振的高。而且半峰宽较宽。同时指出,对圆偏振X射线入射或者A,B两晶体不同类或者两者的衍射级数不相同时,很多文献给出的双晶衍射摇摆曲线半峰宽的近似表达式2^1/2∞不再适用。 关键词：     

高完整GexSi1-x/Si应变超晶格的X射线双晶衍射研究

本文用X射线双晶衍射技术对分子束外延生长的Ge_xSi_1-x/Si应变超晶格的结构参数进行研究,分别采用X射线运动学理论和动力学理论对超晶格的双晶摆动曲线进行计算模拟,得出超晶格的全部结构参数;并对这两种理论计算模拟的结果进行比较,发现这两种理论计算的结果基本一致,只是在细微结构上略有差别,对高完整Ge_xSi_1-x/Si超晶格,用动力学理论计算的曲线更接近于实验曲线。 关键词：     

Zum Kontrast an Versetzungen im Röntgenbild

The causes of contrast at dislocations on X-ray topographs taken with different techniques are discussed. It is shown that a variety of mechanisms may be important for the image formation and the type of contrast observed. Particular attention is paid to the role which the deflection of wavefield rays in the long reaching strainfield of a dislocation may play in the formation of the dislocation image. For the case of dislocations imaged by the double crystal method paths of wavefield rays have been calculated numerically. Since in this case Braggcase wavefields are involved, the general theory of wavefield propagation in a weakly deformed lattice²⁴ had to be used. The results confirm the assumption that deflection of wavefield rays can contribute considerably to dislocation images obtained in X-ray topography.     

Combined multiparametric X-ray diffraction diagnostics of microdefects in silicon crystals after irradiation by high-energy electrons

The quantitative diagnostics of complex defect structures in silicon crystals grown by the Czochralski method and irradiated with different doses of high-energy electrons (18 MeV) is performed by methods of high-resolution X-ray diffraction. The analysis is based on analytical formulas of the statistical dynamical theory of X-ray diffraction in nonideal crystals with randomly distributed defects of several types. Using the combined treatment of reciprocal space maps and rocking curves, the concentration and average radii of dislocation loops, as well as the concentration and radii of oxygen precipitates in the silicon samples, are determined.     

应变弛豫InGaAs/GaAs超晶格的X射线双晶衍射及形貌研究

应用X射线双晶衍射及双晶形貌术,对应变弛豫的InGaAs/GaAs超晶格作了研究,通过对双晶衍射摇摆曲线的计算机模拟,得到了超晶格的结构,应变弛豫机制,弛豫比,超晶格层与衬底的取向差等重要参数。从双晶形貌,得到了超晶格与衬底界面处和超晶格中的位错分布。 关键词：     

A combination of high-resolution X-ray diffractometry and diffraction imaging techniques applied to the study of MOVPE-grown CdxHg1−xTe/CdTe on GaAs

We have applied a range of high-resolution X-ray diffractometry and diffraction imaging techniques to study the structural properties of Cd_xHg_1-xTe (CMT) grown epitaxially on GaAs by MOVPE. In this paper we specifically describe three such techniques and evaluate and compare the results from each.

Automated double crystal diffractometry with a mapping facility provides information on the quality and uniformity of the layers. 004 rocking curve widths vary from < 70 arc seconds on the best samples to substantially higher values on poorer material. Study of non-uniform layers shows that lattice tilts are a dominant influence on rocking curve widths and large (up to 2°) misorientations between epilayer and substrate (100) planes are found on some samples. These characteristics are further investigated using triple crystal diffractometry. X-ray topography of the layers shows orientation-contrast features which correlate directly with the GaAs substrate dislocation distribution.

A number of layers with varying degrees of structural quality have been examined using a combination of the above techniques. Recent results are reported illustrating the value of each technique and we demonstrate how the application of a combination of X-ray diffraction techniques can be a powerful tool for investigating the nature of structural defects in this highly mismatched heteroepitaxial system.     

暗视场及相衬显微术及其对Nd:YAG晶体中缺陷研究

暗视场及相衬显微术的分辨率可达10～500(?),采用这两种技术可以十分清淅地观察到用引上法及温梯法生长的Nd:YAG晶体中的点缺陷集团,小尺寸位错环,蜷线位错,片状缺陷时精细结构.特别是观察到非缀饰刃位错及混台位错的图像.对非缀饰位错的观察已用化学腐浊,光双折射貌相术及X射线形貌术作了证明.     

Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals

Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals grown under various conditions of heat and mass transfer are studied by methods of X-ray topography, high-resolution X-ray diffractometry, and digital image processing. It is established that the inhomogeneity of crystals is determined by specific features of impurity microsegregation during growth under conditions of nonstationary convection in a melt and by peculiarities of the dislocation structure of crystals. The processes related to the initial stage of the decay of the Si supersaturated solid solution in GaSb contribute considerably to the inhomogeneity of crystals on the micro- and macrolevels.     

Stroboscopic X-ray imaging of vibrating dislocations excited by 0.58 GHz phonons

We report on direct imaging, by means of stroboscopic x-ray topography, of phonon-induced dislocation vibrations. X-ray images taken from LiNbO3 crystals excited by 0.58 GHz surface acoustic waves, showed individual acoustic wave fronts as well as their distortions when crossing the dislocation line. The observed contrast is well explained by considering the dynamic deformation field of vibrating dislocation. Comparing simulated deformation maps and x-ray images permitted determination of the local velocities of vibrating dislocations and their viscosity coefficients. We found unexpectedly high velocity values (not far from the speed of sound) and extremely low viscosity coefficients, 2-3 orders of magnitude lower than previously measured in ductile materials.     

Features of X-ray diffraction at elastic deformations near the dislocation axis in section topography techniques

Features of the formation of an x-ray diffraction image by x-ray section topography are considered for a strongly distorted region near the dislocation axis in silicon single crystals. The results of experimental investigations and numerical calculations of the diffraction contrast and section topographs of rectilinear dislocations are presented for their different orientations and positions in the scattering triangle in silicon single crystals. A comparison and an analysis of the experimental topographs and the simulated images lead to the conclusion that the structure of the image of a dislocation strongly depends on its position and orientation in the scattering triangle. It has been found that each point of the strongly distorted region of the elastic field of a dislocation becomes a source of a new wave field propagating under the dislocation in a new scattering triangle. This new field interferes with the primary wave field forming the observed diffraction image of a dislocation. The addition of these waves with regard to their amplitudes and phases results in a large variety of images of defects. A comparison of different dislocation orientations in the Borrmann triangle allowed us to evaluate the role of different effects determined by the interference of the initial and newly formed wave fields, to determine on this basis the main dislocation parameters, and to optimize the diffraction conditions of the topographic measurement for the investigation of elastic-field characteristics.     

邻苯二甲酸氢铊单晶位错的Borrmann象衬度

本文报道新近开发的、X射线衍射效率很大的邻苯二甲酸氢铊(TAP)单晶中位错的Borrmann象。位错近核心区的精细象衬度不但与晶片的厚度有关,而且随着Borrmann系数ε值的下降而模糊,以至精细象结构随衬度反转而完全消失。 关键词：     

In1-xGaxAsyP1-y/InP异质界面晶格失配对外延晶体质量的影响

用X-射线双晶衍射,双晶形貌术和光致发光方法综合研究了In1-xGaxAsyP1-y/InP异质界面晶格失配对LPE晶体质量的影响。实验表明,异质界面晶格失配是导致外延层中位错和缺陷增多,杂质凝聚和辐射复合深中心增多的重要因素。     

Large‐surface‐area diamond (111) crystal plates for applications in high‐heat‐load wavefront‐preserving X‐ray crystal optics

Fabrication and results of high‐resolution X‐ray topography characterization of diamond single‐crystal plates with large surface area (10 mm × 10 mm) and (111) crystal surface orientation for applications in high‐heat‐load X‐ray crystal optics are reported. The plates were fabricated by laser‐cutting of the (111) facets of diamond crystals grown using high‐pressure high‐temperature methods. The intrinsic crystal quality of a selected 3 mm × 7 mm crystal region of one of the studied samples was found to be suitable for applications in wavefront‐preserving high‐heat‐load crystal optics. Wavefront characterization was performed using sequential X‐ray diffraction topography in the pseudo plane wave configuration and data analysis using rocking‐curve topography. The variations of the rocking‐curve width and peak position measured with a spatial resolution of 13 µm × 13 µm over the selected region were found to be less than 1 µrad.     

高分辨X射线衍射研究杂质对晶体结构完整性的影响

用水溶液生长晶体的方法生长出了不同掺杂的Sr(NO₃)₂晶体.用电子探针研究了杂质在晶体中的分布情况.结果表明,杂质在晶体中存在扇形分凝,其中Ba在{100}扇形区的含量大于{111}扇形区,而Pb的分凝情况相反,在{111}扇形区的含量大于{100}扇形区.用高分辨X射线衍射摇摆曲线技术研究了纯的、掺Ba的和掺Pb的Sr(NO₃)₂晶体的完整性情况,并用X射线衍射动力学理论计算了完整Sr(NO₃ 关键词： 高分辨X射线衍射 杂质 水溶液晶体生长     

Post-yielding dislocation retraction of nano-lamellar TiAl single crystals

The perfect single crystal has ultra-high strength but is often accompanied by catastrophic failures after yielding. This study reveals that nano-lamellar TiAl single crystals alleviate the catastrophic failure due to a post-yielding dislocation retraction through atomistic simulations and theoretical analyses. This dislocation retraction leads to a retained post-yielding strength of1.03 to 2.33 GPa(about 50% of the yielding strength). It is shown that this dislocation retraction is caused by local stress relaxation and interface-mediated image force. The local stress relaxation is due to successive dislocation nucleation in different slip systems, and the interface-mediated image force is caused by the heterogeneous interface. Based on dislocation theory, this study demonstrates that the size effect also plays a vital role in dislocation retraction. Theoretical modeling shows that the dislocation retraction occurs when the lamellar thickness is less than approximately 12 nm. Additionally, the post-yielding dislocation retraction is more pronounced at higher temperatures, making it more effective in alleviating catastrophic failures.These findings demonstrate a viable option for avoiding catastrophic failure of single crystals through nanoscale-lamellar design.     

Visualization of surface acoustic wave scattering by dislocations

Stroboscopic X-ray topography at the synchrotron beam line was used to visualize the propagation of a 580 MHz surface acoustic waves (SAW) in LiNbO3 crystals. For this purpose, the X-ray bursts coming from the synchrotron storage ring with periodicity of 5.68 MHz were synchronized with the SAW frequency in a phase-locked mode. This method allowed us to "stop" the SAW in time and to observe the X-ray diffraction contrast caused by the dynamic deformation field of SAW. The X-ray topographic images showed well-resolved individual acoustic wave fronts of 6 microm SAW as well as their distortions due to SAW scattering by linear dislocations. Some of the images revealed an exceptional contrast of the concentric rings about the dislocation line, which is caused by coherent interaction of the secondary elastic waves. This contrast is similar to the Fresnel zones in optics, and this conclusion is confirmed by direct summation of secondary waves emitted by local elements of a vibrating dislocation string.     

A study of the contrast on growth striations in silicon by X-ray double crystal topography in the Laue case

The image of growth striations in Si formed by the double crystal X-ray topography in the Laue case (DCTL) is investigated. The results of the dynamical diffraction theory for crystals with small microdefects have been compared with the contrast behaviour determined experimentally. It has been found that the theory explains qualitatively the contrast on the striations and it has been demonstrated that the DCTL method is suitable for detection of the presence of small microdefects in growth striations. Since the paper completes a series of papers on X-ray topography of growth striations, some general conclusions are formulated concerning the applicability of the X-ray topographical methods to the investigation of the structure of the growth striations