Simulation of the passively mode-locked laser with a SESAM

By solving the Haus master equation through split step Fourier transform method, several programs which can simulate the soliton mode-locked dynamic processes of the passively mode-locked solid laser with a semiconductor saturable absorber mirror (SESAM) are established, based on a MATLAB environment. The pulse evolution equations are solved numerically. Sample calculations for a diode-pumped Nd³⁺:YVO₄ (0.5% doped) laser with a SESAM are presented to demonstrate the use of the simulation programs and the related formulas. Several theoretical results such as the pulse width, the peak power and the average output power are obtained with a given cavity structure, which are in good agreement with the reported experimental results.     

LD end-pumped intracavity frequency doubling SESAM passively mode-locked picosecond lasers

A diode pumped Nd:YVO₄ semiconductor saturable absorber mirrors (SESAM) passive mode-locked intracavity frequency doubled laser was studied. A type I phase matching LBO frequency doubling crystal was inserted in the cavity. With a pump power of 4.5 W, a 140 mW output of frequency doubled beam was achieved with LBO, while the power of one fundamental frequency beam was 240 mW with repetition rate of 85 MHz, and pulse duration of 5.2 ps.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

In situ characterization of semiconductor saturable absorber mirrors in an operating Yb:KGW mode-locked laser

We report in situ characterization of a semiconductor saturable absorber mirror (SESAM) in an operating Yb:KGW mode-locked laser. The technique may be described as a pump-probe experiment in which the intracavity beam acts as a pump beam while the output of the same laser is used as a test beam for the SESAM reflectivity. At zero delay, the probe pulse overlaps in time with the subsequent intracavity pulse. The method is an alternative to standard pump-probe measurements in situations where the intracavity parameters such as energy fluence onto the SESAM, pulse length, and center wavelength cannot be achieved simultaneously with available lasers.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

Laser-diode end-pumped intracavity frequency doubling semiconductor saturable absorber mirror passively mode-locked picosecond lasers

A diode pumped Nd:YVO₄ semiconductor saturable absorber mirror (SESAM) passive mode-locked intracavity frequency doubled laser was studied. A type II phase matching KTiOPO₄(KTP) crystal and a type I phase matching LiB₃O₅ (LBO) frequency doubling crystal were respectively inserted in the cavity. With a pump power of 4.5 W, a 90 mW output of frequency doubled beam and 29.7 ps pulse duration were achieved with frequency doubled by KTP. With the same pump power a 140 mW output of frequency doubled beam and 3.67 ps pulse duration were achieved with LBO.     

High efficiency passive mode-locked Nd:YVO<Subscript>4</Subscript> laser based on SESAM under direct pumping at 880 nm

We report on an 880 nm LD pumped passive mode-locked TEM₀₀ Nd:YVO₄ laser based on a semiconductor saturable absorber mirror (SESAM), with a high optical-to-optical conversion efficiency of 67.3%, and a slope efficiency of 71%. When the absorbed pump power was 11 W, 7.4 W average output power of 1064 nm continuous-wave mode-locked laser was achieved. To our knowledge, this is the highest optical-to-optical conversion efficiency among all the published reports of 880 nm LD pumped SESAM passive mode-locked lasers. The repetition rate of mode-locked pulse was 80 MHz with 26 ps pulse width. The maximum pulse energy and peak power were 92.5 nJ and 3.6 kW, respectively.     

Diode-pumped passively mode-locked Yb:LSO/SESAM laser

Diode-end-pumped passively mode-locked Yb³⁺:Lu₂SiO₅ (Yb:LSO) lasers both in the picosecond and the femtosecond regimes were demonstrated in this paper. The mode-locked lasers were initiated by using of semiconductor saturable absorber mirrors (SESAM). In the absence of intra-prisms for pulse compression, the laser emitted 1.6 W of output power with pulses width of about 4.3 ps. A pair of SF10 prisms was inserted into the laser cavity, pulses as short as 699 fs was generated around a center wavelength of 1043.6 nm with an average output power of 800 mW and a peak power of 11.0 kW.     

High-stability passively mode-locked laser based on dual SESAM

A novel passively continuous-wave mode-locked laser by using two semiconductor saturable absorber mirrors (SESAMs) was demonstrated. The obtained average output power was 2.4 W with a pulse width of 9.97 ps and a pulse repetition rate of 127 MHz. The dual-SESAM mode-locked laser operation was more stable than the cases with single SESAM. The experimental results show that the long-term stability of the dual-SESAM mode-locked picosecond lasers provides promising potential for industrial applications.     

Self-starting mode-locked picosecond Ti：sapphire laser by using of a fast SESAM

A stable continuous wave mode-locked picosecond Ti:sapphire laser by using a fast semiconductor saturable absorber mirror (SESAM) is demonstrated. The laser delivers pulse width of 20 ps at a central wavelength of 813 nm and a repetition rate of 100 MHz. The maximum output power is 1.34 W with pump power of 7 W which corresponds to an optical--optical conversion efficiency of 19.1%.     

Single-passed passively mode-locked Nd:YVO<Subscript>4</Subscript> picosecond laser with SESAM

We report on the LD-pumped passively mode-locked solid-state laser with SESAM (semiconductor saturable absorber mirror), in which the output beam is single passed through a flat mirror. The CW mode-locking pulse at 1064 nm, with an output power of 5 W, a pulse repetition rate of 98 MHz, and a pulse width of 25.3 ps. The beam quality is M ² < 1.12 and the optical-optical efficiency is 35.7%.     

Continuous-wave passively mode-locked Nd:YVO<Subscript>4</Subscript>/KTP green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked low-doped Nd:YVO₄ green laser with a semiconductor saturable absorber mirror (SESAM) and an intracavity frequency-doubling KTP crystal is demonstrated. In order to efficiently release the thermal effect, a low-doped Nd:YVO₄ crystal with the Nd³⁺ concentration of 0.1 at % is employed as the gain medium. The maximum average output power of 3.1 W at 532 nm with a repetition rate of 102 MHz is obtained under the pump power of 25 W, corresponding to an optical conversion efficiency of 12.4%. The 532 nm mode locked pulse width is estimated to be approximately 6.1 ps.     

Diode-end-pumped Nd:CaYAlO4 mode locked laser

A diode pumped passively mode locked Nd:CaYAlO₄ (Nd:CYA) laser is demonstrated for the first time to the authors' knowledge. Using a V-shaped cavity and a semiconductor saturable absorbing mirror (SESAM), self-started mode locking of the laser is experimentally achieved. The mode-locked pulses are as short as 3.9 ps at a central wavelength of 1080.2 nm. The mode-locked laser produced a maximum average output power of 2.25 W with a slope efficiency of 23.2%.     

980-nm all-fiber mode-locked Yb-doped phosphate fiber oscillator based on semiconductor saturable absorber mirror and its amplifier

A 980-nm semiconductor saturable absorber mirror(SESAM) mode-locked Yb-doped phosphate fiber laser is demonstrated by using an all-fiber linear cavity configuration. Two different kinds of cavity lengths are introduced into the oscillator to obtain a robust and stable mode-locked seed source. When the cavity length is chosen to be 6 m, the oscillator generates an average output power of 3.5 m W and a pulse width of 76.27 ps with a repetition rate of 17.08 MHz. As the cavity length is optimized to short, 4.4-m W maximum output power and 61.15-ps pulse width are produced at a repetition rate of 20.96 MHz. The output spectrum is centered at 980 nm with a narrow spectral bandwidth of 0.13 nm. In the experiment, no undesired amplified spontaneous emission(ASE) nor harmful oscillation around 1030 nm is observed. Moreover,through a two-stage all-fiber-integrated amplifier, an output power of 740 m W is generated with a pulse width of 200 ps.     

Bidirectional passively mode-locked soliton fiber laser with a four-port circulator

We present an all-fiber bidirectional passively mode-locked soliton laser with what we believe is a novel cavity configuration. Using a four-port circulator, we incorporate two different semiconductor saturable absorber mirrors (SESAMs) into the laser cavity, which enables bidirectional mode locking. The laser allows the generation of two independent countercirculating mode-locked pulse trains, each with an individual fundamental repetition rate that can be adjusted by varying the SESAM pigtail length. Two countercirculating pulse trains with repetition rates of 21.3 and 15.2 MHz are obtained simultaneously. By controlling the intracavity loss imposed on these two pulse trains, either one of the two pulse trains can be switched on or off. The bidirectional operation with other repetition rates is also demonstrated.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

True fundamental solitons in a passively mode-locked short-cavity Cr(4+):YAG laser

We demonstrate a self-starting, passively mode-locked short-cavity Cr(4+):YAG laser that supports fundamental intracavity solitons over wide ranges of cavity group-velocity dispersion and pulse energies. The total dispersion and nonlinear effects are small enough that stable, N=1 soliton pulses are generated. Equally spaced multiple pulsing is also observed, with fundamental soliton behavior preserved. Regions of bistability exist where, at a constant cavity dispersion, the laser can produce transform-limited pulses of a different width and energy. The laser produces 200-fs pulses at approximately 0.9-, 1.8-, and 2.7-GHz repetition rates with a total of 82 mW of average output power.     

Diode-pumped femtosecond Yb:CaNb2O6 laser

We report to our knowledge a diode-pumped passively mode-locked Yb:CaNb(2)O(6) (Yb:CN) laser for the first time. Both CW and passive mode-locking operation of the laser are experimentally investigated. A maximum CW output power of 1.4 W with a slope efficiency of 20% is obtained on a 7 mm long 1.5 at.% Yb:CN crystal, while stable passive mode-locking with a commercial semiconductor saturable absorption mirror (SESAM) was achieved on a 3 mm long 3 at.% Yb:CN crystal. The mode-locked pulses have pulse width of 251 fs and an average output power of 44 mW at 1038 nm.     

Adjustable picosecond pulse duration in a LD end pumped SESAM passively mode-locked Nd:YVO<Subscript>4</Subscript> laser

With adjustable pulse durations, a semiconductor saturable absorber mirror (SESAM) passively mode-locked picosecond Nd:YVO₄ laser was studied. The pulse duration was adjustable from 20 to 80 ps by using intracavity etalons of different thicknesses.     

Diode-pumped passively mode-locked Nd:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> laser

We have experimentally demonstrated a diode-pumped passively mode-locked Nd:CaNb₂O₆ laser for the first time to our best knowledge. With a semiconductor saturable absorber mirror (SESAM) as a passive mode locker, the laser generated stable mode-locked pulses with pulse duration of 17.3 ps and repetition rate of 88.4 MHz. With a singe-emitter laser diode pumping, the maximum average output power of the mode-locked laser was 0.843 W, with a slope efficiency of 23%. The experimental results show the Nd:CaNb₂O₆ crystal is a promising laser gain medium for picosecond pulse generation.