Nanosecond photoelectric effects in all-oxide p-n junction of La<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>MnO<Subscript>3</Subscript>/SrNb<Subscript>0.01</Subscript>Ti<Subscript>0.99</Subscript>O<Subscript>3</Subscript>

Nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La_0.9Sr_0.1MnO₃/SrNb_0.01Ti_0.99O₃ for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La_0.9Sr_0.1MnO₃ thin film in the p-n junction was irradiated by a laser of ≈20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/MJ for a 308 nm laser pulse.     

Synthesis of LiNi<Subscript>0.5</Subscript>Mn<Subscript>1.5</Subscript>O<Subscript>4</Subscript> nano/microspheres with adjustable hollow structures for lithium-ion battery

High-voltage spinel LiNi_0.5Mn_1.5O₄ nano/microspheres with adjustable hollow structures have been fabricated based on the Kirkendall effect. The main characteristic is that the wall thickness of the hollow structure as well as the cavity size of the hollow structure can be adjusted by the different ratio of mixed precipitation agents. Especially, the diagrammatic sketch for the formation process of various LiNi_0.5Mn_1.5O₄ materials with adjustable hollow structures is discussed. Besides, the results of electrochemical performance test show that LiNi_0.5Mn_1.5O₄ obtained from 10:1 Na₂CO₃/NaOH (in mole) ratio is worth looking forward to, owing to its special hierarchical nano/microsphere and moderate hollow structures.     

Actively mode-locked Tm-Ho:LiYF<Subscript>4</Subscript> and Tm-Ho:BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> lasers

We report on the generation of mode-locking pulse trains with high average output powers from diode-pumped Tm-Ho:LiYF₄ and Tm-Ho:BaY₂F₈ lasers emitting at around 2 μm. The highest output power of 365 mW was obtained with the Tm-Ho:YLF₄ laser, whereas the shortest pulse duration of 120 ps and the widest tunability range of 59 nm was achieved with the Tm-Ho:BaY₂F₈ laser. PACS 42.55.Xi; 42.60.Fc; 42.72.Ai; 42.55.Rz; 42.70.Hj     

Passive mode-locking Yb<Subscript>3+</Subscript>:Sc<Subscript>2</Subscript>SiO<Subscript>5</Subscript> laser at 1040 nm with SESAM

Passive mode locking of the new crystal Yb₃₊:Sc₂SiO₅ (Yb:SSO) laser at 1040 nm in a w-type cavity is reported for the first time to our knowledge. The laser operated at a repetition frequency of 94 MHz. A pulse duration of 4.2 ps was produced with an average power of 543 mW and a highest pulse energy of 5.7 nJ, corresponding it’s maximum peak power can reach to 1.4 kW.     

High-pulse-stability double-end continuous-grown YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> acousto-optically Q-switched laser at high repetition rates

High pulse amplitude stability of 0.62% (rms) is achieved at 60 kHz repetition rate in fundamental mode with double-end continuous-grown YVO₄/Nd:YVO₄/YVO₄ composite crystal. The average output power and pulse peak power are 32.9 W and 27.7 kW, respectively, with 19.8 ns pulse width and 548 μJ pulse energy. The pulse amplitude stability is investigated experimentally. The stability gets improved with the decrease of repetition rate and output transmission. From theoretical analysis, the reason of pulse instability at high repetition rates is that the initial population inversion doesn’t saturate and the final population inversion doesn’t approach zero. With the decrease of repetition rate and output transmission, the final population inversion decreases and the interaction between two adjacent pulse periods is weakened. Therefore, pulse stability improves.     

Passively Q-switched laser performance of a diode-pump mixed Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> crystal

A diode-pumped passively Q-switched Nd:Lu_0.15Y_0.85VO₄ laser with a GaAs output coupler is demonstrated. By using a mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, the passively Q-switched laser can generate shorter pulse width with higher peak power in comparison with the passively Q-switched Nd:LuVO₄ or Nd:YVO₄ lasers under the same laser cavity. At the incident pump power 11.9 W, the minimum pulse width of 3.23 ns and the maximum peak power 1.67 kW can be obtained. The average output power and the pulse repetition rate of the laser are also measured. The experimental results show that the mixed crystal is a promising laser medium for shorter Q-switched pulse with higher peak power.     

Diode-pumped passively mode-locked Nd:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> laser

We have experimentally demonstrated a diode-pumped passively mode-locked Nd:CaNb₂O₆ laser for the first time to our best knowledge. With a semiconductor saturable absorber mirror (SESAM) as a passive mode locker, the laser generated stable mode-locked pulses with pulse duration of 17.3 ps and repetition rate of 88.4 MHz. With a singe-emitter laser diode pumping, the maximum average output power of the mode-locked laser was 0.843 W, with a slope efficiency of 23%. The experimental results show the Nd:CaNb₂O₆ crystal is a promising laser gain medium for picosecond pulse generation.     

Characteristics of diode-pumped dual-loss-modulated Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser

A diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and Cr⁴⁺:YAG saturable absorber is presented. The stable QML laser pulse with high peak power and complete modulation depth has been obtained. The QML laser characteristics such as the pulse width, single-pulse energy etc. have been measured for different small-signal transmissions (T ₀) of Cr⁴⁺:YAG, different reflectivity (R) of output coupler and modulation frequencies of the AO modulator (f _p ). The results show that the pulse energy increases with decreasing f _p and increasing T ₀, while the pulse width decreases with decreasing f _p and increasing T ₀. At f _p = 10 kHz, R = 90%, and T ₀ = 91%, the highest pulse energy and peak power of mode-locked pulses is obtained.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Photoionization of the C<Subscript>60</Subscript> and C<Subscript>240</Subscript> fullerenes by ultrashort electromagnetic pulses

The photoionization of the C₆₀ and C₂₄₀ fullerenes by ultrashort electromagnetic pulses of subfemtosecond duration is studied. The probability for the process to occur during the action of the pulse as a function of the pulse duration is calculated for different carrier frequencies. The spectrum of photoelectrons emitted during the ionization of the fullerenes by a pulse with a corrected Gaussian shape is calculated.     

Performance comparisons of passively Q-switched intracavity-frequency-doubled Nd:Gd<Subscript>0.19</Subscript>Y<Subscript>0.81</Subscript>VO<Subscript>4</Subscript> and Nd:Gd<Subscript>0.83</Subscript>Y<Subscript>0.17</Subscript>VO<Subscript>4</Subscript> lasers at 671 nm

Performance comparisons of laser-diode pumped passively Q-switched intracavity-frequency-doubled Nd:Gd_0.19Y_0.81VO₄ and Nd:Gd_0.83Y_0.17VO₄ lasers at 671 nm are demonstrated for the first time to our knowledge. KTP crystal is used as the frequency doubling material and V:YAG crystal as the saturable absorber with initial transmission of 89%. The dependences of average output power, pulse width, pulse repetition rate, single-pulse energy and peak power on incident pump power are measured and contrasted. The experimental results show that, Nd:Gd_0.83Y_0.17VO₄ laser has more excellent properties than Nd:Gd_0.19Y_0.81VO₄ laser at 671 nm.     

Diode-pumped Q-switched Nd:Y<Subscript>0.5</Subscript>Lu<Subscript>0.5</Subscript>VO<Subscript>4</Subscript> laser double-modulated with an acousto-optic modulator and Cr<Superscript>4+</Superscript>:YAG saturable absorber

A diode pumped Nd:Y_0.5Lu_0.5VO₄ pulse laser modulated with an acousto-optic (AO) Q-switcher and Cr⁴⁺:YAG saturable absorber is first demonstrated in this paper. The laser is shown to generate shorter pulse width than AO Q-switched laser alone, and have a higher peak power and single pulse energy than passively Q-switched laser with only Cr⁴⁺:YAG. A laser pulse width of 6.16 ns and a peak power of about 43.83 kW are achieved at the incident pumping power of 14.09 W.     

The role of magnetization compensation point for efficient ultrafast control of magnetization in Gd<Subscript>24</Subscript>Fe<Subscript>66.5</Subscript>Co<Subscript>9.5</Subscript> alloy

The ability of a femtosecond laser pulse to manipulate and reverse the magnetization in a ferrimagnetic Gd₂₄Fe_66.5Co_9.5 thin film was studied experimentally as a function of temperature. For a fixed energy of the laser pulse, the dynamics of magnetization showed different behavior depending on whether the sample temperature was below or above the magnetization compensation point (T _M ). The conditions for full ultrafast demagnetization and magnetization reversal were easily achieved below T _M , while the same laser excitation caused just 50% demagnetization above T _M . This interesting change in magnetization dynamics is qualitatively explained in terms of effective changes in the magnitudes of magnetizations of atomic sublattices.     

Numerical Simulation of a TM<Subscript>01</Subscript>–TE<Subscript>11</Subscript> Waveguide Mode Converter by the FDTD Method

We consider the problem of propagation of a microwave pulse with given transverse structure through a waveguide converter of the circular-waveguide modes from TM₀₁ to TE₁₁ The FDTD method is used for numerical study of the mode composition of the pulse at the converter output as a function of its duration.The frequency characteristic of the converter is obtained from the Fourier response to a wide-spectrum pulse.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 48, No. 3, pp. 207–218, March 2005.     

Optical second harmonic generation and its photoinduced dynamics in ferroelectric semiconductor Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript>

By means of optical pump–probe technique, the ultrafast dynamics of nonlinear optical response of the ferroelectric semiconductor Sn₂P₂S₆ crystal excited with a femtosecond laser pulse has been investigated. It has been shown that, under the action of femtosecond pulses, change in optical second harmonic generation occurs in the sample, which can be due to screening of existing electric polarization.     

Diode-pumped high-efficiency passively Q-switched Yb:CaYAlO<Subscript>4</Subscript> laser

We experimentally demonstrated a high-efficiency passively Q-switched Yb:CaYAlO₄ (Yb:CYA) laser based on a semiconductor-saturable absorber mirror (SESAM), and the output characteristics of the laser including the average output power, repetition frequency, pulse duration, pulse energy and pulse peak power were investigated by adopting output mirrors with different transmittances. When the transmittance of the output mirror was 5% and the pump power was set at about 7.76 W, a maximum average output power of as high as 2.480 W was achieved with a slope efficiency and light-to-light efficiency of the Q-switched Yb:CYA laser of up to 37.1% and 31.2%, respectively.     

Marangoni effect induced micro/nano-patterning on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> phase change thin film by laser pulse

Thermocapillary and chemicapillary effects are known to coexist in a material molten pool when irradiated by a pulse laser. According to the effects, we fabricate various patterns with different shapes on a Sb₂Te₃ phase change thin film by precisely adjusting the pulse energy. In this process, the laser power is fixed at 5.0 mW, and the pulse width is adjusted from 100 ns to 5 ns. The shape of the patterns gradually changes from a dimple-bowl shape, a dome shape, a “Sombrero” shape to a deep-bowl shape following an increase in the pulse energy, which corresponds to the crystallization-threshold, bump-threshold, rupture-threshold, and ablation-threshold of the material. The different patterns are the results of the competition between the thermocapillary and chemicapillary effects in the molten pool, which determine the nature of the flow and lead to the different patterns in different laser parameters.     

Al<Subscript>2</Subscript>O<Subscript>3</Subscript> plasma production during pulsed laser deposition

A Nd:YAG laser operating in second harmonic (532 nm), 3 ns pulse duration, 150 mJ pulse energy, and 10 Hz repetition rate, is employed to irradiate Al₂O₃ target placed in high vacuum. The produced plasma is investigated by an ion collector used in time-of-flight configuration and by a mass quadrupole spectrometer, in order to determine the equivalent plasma temperature and the atomic and molecular composition. Pulsed laser deposition technique has been used to produce thin films on different substrates placed close to the target. Different surface analyses, such as energy dispersive X-ray fluorescence (EDXRF), X-ray photoelectron spectroscopy (XPS) and surface profilometry are employed to characterize the produced films. Measurements of ablation yield, plasma equivalent temperature, acceleration voltage and characterization of grown thin films are presented and discussed.     

Broad-band regenerative laser amplification in ytterbium-doped calcium fluoride (Yb:CaF<Subscript>2</Subscript>)

An output pulse energy of 17.3 mJ has been achieved with a diode-pumped Yb:CaF₂ regenerative laser amplifier. The bandwidth of the output pulse spectrum was 7.3 nm, being seeded with femtosecond pulses stretched to 2.2 ns. In cw operation a tuning range of 80 nm has been observed. A maximum pulse energy of 44 mJ at a repetition rate of 1 Hz has been obtained in Q-switched mode. The laser damage threshold of a Yb:CaF₂ crystal has been determined at a wavelength of 1064 nm and a pulse duration of 10 ns. PACS 42.55.Ah; 42.55.Xi; 42.70.Hj     

High-power 10-GHz self-mode-locked Nd:LuVO<Subscript>4</Subscript> laser

We report on a high-power diode-end-pumped self-mode-locked Nd:LuVO₄ laser with the pulse repetition rate up to 9.52 GHz for the first time. The large third-order nonlinearity of the Nd:LuVO₄ crystal is exploited to efficiently achieve a fairly stable self-mode-locked operation without any additional components. The detailed characteristics of the compact efficient self-mode-locked laser are experimentally investigated and theoretically analyzed. With the incident pump power of 2.6 W, the average output power up to 0.54 W is generated with the pulse width of 7.9 ps at the pulse repetition rate of 9.52 GHz.