碳纳米管的稳定性研究

石墨晶体结构遭到破坏时,总是碎化为微小尺寸的片状粉末.孤立的石墨烯片在其边缘存在大量的悬挂键,使得石墨烯片的能量较高,状态也不稳定.石墨烯片卷曲形成碳纳米管后,悬挂键减少,系统能量相应降低.另一方面,石墨烯片卷曲形成碳纳米管将产生相应的形变势能,形变势能的产生将抵消由于减少石墨烯片边缘上的悬挂键所带来的能量降低,使碳纳米管的能量可能高于石墨烯片的能量,导致碳纳米管结构的不稳定.在建立碳纳米管生成的力学模型并进行深入理论分析的基础上得出了碳纳米管可以稳定存在的最小直径约为0.32nm的结论. 关键词： 碳纳米管 稳定性 形变势能 键能     

氮掺杂石墨烯纳米片的制备及其电化学性能

以石墨片为原料,在氮气气氛下,通过机械针磨法制备了氮掺杂石墨烯纳米片.扫描电子显微镜和比表面积分析表明机械针磨过程可以有效地将大尺寸石墨片破碎成石墨烯纳米片.在石墨片的破碎过程中,会引起C—C键的破坏.因此,在破坏的边缘位置能够产生碳活性点.这些碳活性点可以与氮反应实现氮元素的掺杂.X射线光电子能谱分析表明碳活性点与氮反应使氮元素掺入石墨烯结构边缘,形成吡咯型氮和吡啶型氮.电化学阻抗谱分析表明所制备的氮掺杂石墨烯纳米片对I_3~-还原反应具有较高的电催化活性,循环伏安与恒流充放电测试表明氮掺杂石墨烯纳米片具有较好的电容性能.较高的比表面积和边缘氮掺杂结构是氮掺杂石墨烯纳米片具有优异电化学性能的主要原因.因此,氮掺杂石墨烯纳米片可以应用于染料敏化太阳能电池对电极和超级电容器电极.     

石墨烯在Ni(111)表面生长机理的紧束缚计算研究

本文采用SCC-DFTB方法,研究了石墨烯在Ni金属(111)表面上的生长机理及在台阶面生长情况.结果分析表明,苯环在Ni表面吸附时以界面fcc构型总能最低,结构最为稳定.边缘生长时,附着在衬底表面上的石墨烯层中C原子活性从边缘向中间逐渐降低.在由(111)晶面和(111)晶面相交形成的台阶面上,石墨烯片层可连续生长,同时相对衬底表面发生一定偏转,在较大面积时将出现缺陷.改善石墨烯与衬底台阶处的界面不匹配情况将有利于其大面积高质量生长.     

单空位缺陷对载能氢原子与石墨层间碰撞的能量交换的影响的分子动力学研究

本文采用分子动力学方法研究空位缺陷对石墨层中碳氢粒子碰撞的影响.将氢原子以不同能量分别向单空位缺陷边缘的两个碳原子轰击,分析了入射氢原子的能量损失、发生吸附反应的能量范围和靶原子的能量传递过程.研究发现,单空位缺陷边缘的碳氢粒子更易发生吸附反应;在碳氢粒子正碰过程中,氢原子随入射能量变化出现了双反射区域;碳氢粒子在空位缺陷边缘吸附后,形成了高结合能的sp²结构,并出现悬挂键,其临近的碳碳键能未降低;单空位缺陷边缘的碳原子吸附氢原子能量的能力强而传递能量的能力弱.这些结果对理解聚变反应 关键词： 面向等离子体材料 分子动力学方法 单空位缺陷     

石墨烯在Ni(111)表面生长机理的紧束缚计算研究

本文采用SCC-DFTB方法,研究了石墨烯在Ni金属(111)表面上的生长机理及在台阶面生长情况.结果分析表明,苯环在Ni表面吸附时以界面fcc构型总能最低,结构最为稳定.边缘生长时,附着在衬底表面上的石墨烯层中C原子活性从边缘向中间逐渐降低.在由(111)晶面和(1-11)晶面相交形成的台阶面上,石墨烯片层可连续生长,同时相对衬底表面发生一定偏转,在较大面积时将出现缺陷.改善石墨烯与衬底台阶处的界面不匹配情况将有利于其大面积高质量生长.     

单壁碳纳米管储氢研究

利用Gaussian03程序计算出C-H键的键能是1.88 eV,键长是0.113 nm.已知H-H键能是4.748 eV,键长是0.074 nm.显然,H-H键能大于C-H键的键能,所以在常温常压下碳纳米管储氢时,以物理吸附H_2分子为主,化学形式的C-H键吸附为辅.另外,利用LJ势能函数,计算了H_2分子在碳纳米管中C原子所成的六边形中心正上方、C原子正上方以及相邻两C原子中间正上方时H_2分子与碳纳米管之间的势能.得到无论H_2分子是被吸附到管内或管外,还是被吸附到中间区域或两端区域,都是H_2分子在C原子所成的六边形中心正上方时能量最低.当H_2分子被吸附到碳纳米管中间区域时,管内和管外的H_2分子距管壁的距离分别是0.320 nm和0.309 nm;而当H_2分子被吸附到碳纳米管两端区域时,这两个距离分别是0.324 nm和0.313 nm.     

单壁碳纳米管储氢研究

摘要 利用Gaussian03程序计算出C-H键的键能是1.88eV，键长是0.113nm。已知H-H键能是4.748eV，键长是0.074nm。显然， H-H键能大于C-H键的键能，所以在常温常压下碳纳米管储氢时，以物理吸附H2分子为主，化学形式的C-H键吸附为辅。另外，利用LJ势能函数，计算了H2分子在碳纳米管中C原子所成的六边形中心正上方、C原子正上方以及相邻两C原子中间正上方时H2分子与碳纳米管之间的势能。得到无论管内、管外或者两端，都是H2分子在C原子所成的六边形中心正上方时能量最低。且在管内时H2分子距离管壁的距离是0.320nm，在管外时距离管壁的距离是0.309nm；在两端的管内时距离管壁的距离是0.324nm，在两端的管外时距离管壁的距离是0.313nm。     

碳纳米管与石墨烯协同提高导热硅脂热性能

以甲基硅油为基础油,碳纳米管、石墨烯或碳纳米管/石墨烯混杂物为导热填料,制备复合导热硅脂.研究结果表明:以碳纳米管为单一导热填料,碳纳米管管径越小,管长越长,越有利于导热硅脂的导热性能提升。当总填充量在6%、碳纳米管和石墨烯配比为2:1时,导热硅脂的热导率提高19%。碳纳米管对石墨烯纳米片起到了分隔和桥连的作用,提高了石墨烯纳米片的分散性,有利于三维热传导网络的形成,进而提高导热硅脂的热传导性能。     

单壁碳纳米管储氢的第一原理分子动力学模拟

本文用第一性原理平面波赝势方法模拟研究了手性单壁碳纳米管与氢分子的相互作用,考察了碳纳米管直径对储氢性能的影响.对单壁碳纳米管储氢的模拟结果表明:(1)物理吸附时,H2可以吸附在空腔内,也可以吸附在管与管之间的空隙中,纳米管内部的氢吸附力均高于管外,而“完好无损”的H2分子不能够穿过管壁而进入管内.(2)化学吸附时,碳纳米管对氢的吸附首先出现在管的边缘附近,碳纳米管局部会发生形变,SWCNTs的张力会随C-H键的增加而增大,系统不稳定.(3)随着直径的增加,纳米管内、外的氢吸附力差异减小.     

氧化石墨烯褶皱行为与结构的分子模拟研究

应用反应力场分子动力学方法,模拟了单层氧化石墨烯在径向压缩作用下的褶皱过程,研究了含氧基团(羟基、环氧基)对氧化石墨烯褶皱行为以及褶皱球结构稳定性的影响.当石墨烯仅含羟基时,该类氧化石墨烯呈现出"推进式"的褶皱行为,而当石墨烯仅含环氧基时,该类氧化石墨烯则呈现出片层与片层"贴合式"的褶皱行为.褶皱行为的不同决定了氧化石墨烯最终褶皱球结构的差异.通过分析原子级势能增量分布与C—C成、断键位置之间的关系,发现氧化石墨烯上C—C成、断键主要发生在变形较为严重的区域,且相较于羟基,环氧基对与其连接的C—C键具有更强的削弱作用.为了研究氧化石墨烯褶皱球的结构稳定性,模拟了其在无约束条件下的释放过程.发现氧化石墨烯褶皱球的结构稳定性取决于其中C—C成、断键数量,即C—C成、断键的数量越多,结构越稳定,且在同一氧化率下,褶皱球的结构稳定性随环氧基比例的增大而提高.本研究表明,通过改变氧化石墨烯片层上含氧基团的相对比例,可实现对其褶皱球稳定性的控制.     

载能氢原子与石墨(001)面碰撞过程中的能量传递行为的分子动力学研究

本文采用分子动力学方法研究了单一载能氢原子与石墨碰撞时氢原子被石墨反射、 吸附和石墨被氢原子穿透的发生系数以及碰撞中的能量传递机理. 研究发现: 与单层石墨相比, 多层石墨之间的长程相互作用增加了氢原子发生反射的能量范围, 尤其当入射能量大于20.0 eV时, 对反射过程的影响很明显; 当氢原子的入射能量大于25.0 eV时, 有一定的概率穿透四层石墨; 当氢原子入射能量高于28.0 eV时, 载能氢原子的能量传递给第二层石墨烯的比传递给第一层石墨烯的多. 这些结果对理解聚变反应中, 碳基材料的化学腐蚀及氚滞留有重要意义.     

Formation of sp(3) bonding in nanoindented carbon nanotubes and graphite

Nanoindentation-induced interlayer bond switching and phase transformation in carbon nanotubes (CNTs) and graphite are simulated by molecular dynamics. Both graphite and CNTs experience a soft-to-hard phase transformation at room temperature at compressive stresses of 12 and 16 GPa, respectively. Further penetration leads to the formation of interlayer sp(3) bonds, which are reversible upon unloading if the compressive stress is under about 70 GPa, beyond which permanent interlayer sp(3) bonds form. During nanoindentation, the maximum nanohardness of graphite can reach 109 GPa, and CNTs 120 GPa, which is comparable to that of diamond.     

开口悬挂端对单壁碳纳米管电子输运特性的影响

采用紧束缚模型研究了悬挂端对单壁碳纳米管电子输运特性的影响.结果表明：有限长悬挂端开口碳纳米管的电导在费米能级附近作周期性振荡.椅型(armchair)碳纳米管的振荡同时具有快、慢两个准周期，而锯齿型(zigzag)碳纳米管的振荡仅有一个周期；碳纳米管电导在费米能级附近的振荡周期随着悬挂端的增长而减小.研究还发现：有限长悬挂端开口碳纳米管的平均电导随探针与碳纳米管间耦合强度的增加而增大，其大小约为无限长悬挂端开口碳纳米管平均电导的两倍. 关键词： 输运特性 碳纳米管 紧束缚模型     

Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

The lattice-misfit InN/GaN (0001) interface supports a triangular network of α-core 90° partial misfit dislocations. These misfit dislocations provide excellent strain relief. However, in their unreconstructed form the dislocation contains numerous high-energy N dangling bonds, which must be eliminated by reconstructing the dislocation core. Existing single-period (SP) and double-period (DP) dislocation reconstruction models eliminate these dangling bonds via a like-atom dimerization, such as N-N dimers. However, we show that these N–N dimers are unstable for the III-N materials, so an entirely new reconstruction mechanism is needed. A “triple-period” (TP) structural model is developed which eliminates N dangling bonds via the formation of N vacancies instead of N-N dimers. The model contains no N–N (or III–III) bonds, fully bonds all N atoms to four group-III neighboring atoms, and satisfies the “electron counting rule” by transferring charge from In dangling bonds to Ga dangling bonds.     

Structure and electronic properties of cleaved Si(111) upon Ge adsorption

The effect of ultrahigh vacuum deposition of Ge below and at monolayer coverage onto clean cleaved Si(111) surface held at room temperature is studied by low energy electron diffraction, Auger electron specroscopy and photoemission yield spectroscopy. A well ordered $\text{3}\text{×}\text{3}$ R 30° structure developes at $\text{1}\text{3}$ ML, where it replaces the 2 × 1 initial pattern; it persists at $\text{2}\text{3}$ ML before transforming into a 1 × 1 diagram which fades into increasing background at 1 ML and up. Si surface dangling bonds are replaced at $\text{1}\text{3}$ ML by states associated with Ge-Si bonds and Ge dangling bonds to which states due to Ge-Ge bonds added upon increasing coverage.     

表面悬挂键对GaAs纳米线掺杂的影响及其钝化

利用第一性原理计算方法研究了表面悬挂键对GaAs纳米线掺杂的影响及其钝化．计算结果显示,不论是闪锌矿结构还是纤锌矿结构,GaAs纳米线表面Ga原子上带正电荷的表面悬挂键都是一类稳定的缺陷,并且这种稳定性不会随着纳米线直径的变化而变化．这种表面悬挂键会形成载流子陷阱中心从而从p型掺杂的GaAs纳米线俘获空穴,使得纳米线的掺杂效率下降．和NH₃相比,NO₂ 具有足够的电负性来俘获GaAs纳米线表面悬挂键上的未配对电子,从而有效地钝化GaAs纳米线的表面悬挂键,提高纳米线的p型掺杂效率,并且这种钝化特性不会随着纳米线直径的变化而改变．     

Electronic structure of Si(111) surfaces

We report on new angle-resolved photoemission studies of Si(111) 2 × 1 and 7 × 7 surfaces. The emission from the 2 × 1 surface shows much structure. For normal emission the energy positions are insensitive to the photon energy in the range 19–27 eV. The emission has been interpreted as a probe of the surface density of states, SDOS, including both surface states, resonances and bulk-like states. The SDOS was also calculated as a function of parallel momentum k_∥ for a model of the Si(111) 2 × 1 surface obtained from energy minimization considerations. We identify emission from the dangling bond band, which has a positive dispersion of 0.6 eV, and also emission from surface resonances which have some character of the compressed and stretched back bonds. There are also other predicted surface resonances that correspond to experimental peaks which have not been identified in previous work. Except for the dangling bond band, the surface resonances are limited in k_∥ space, so that it is not possible to follow these resonance bands over all angles. Maximum intensity for the normal emission from the dangling bond is obtained at 23 eV, while the emission from the lowest s-like states monotonically increases towards 30 eV photon energy. When annealing the cleaved 2 × 1 surface to the 7 × 7 reconstructed surface, the spectra broaden significantly. The intensity of the dangling bond decreases and we see a very small metallic edge.     

Hydrogen adsorption on the silicon (001) surface and on a step on the (111) surface

Adsorption of atomic hydrogen on an ideal (001) silicon surface is investigated in the present paper. Saturation of one of the two dangling bonds of a silicon atom on this surface by hydrogen removes the interaction (hybridization) between them, resulting in the appearance of a bonding and an antibonding chemisorption state associated with the attacked dangling bond, and in the shift of the peak of the remaining unsaturated dangling bond to the energy typical of a surface state of the (111) surface. Further saturation leads to the disappearance of this peak from the energy spectrum. An analogous situation occurs for the silicon atom with two dangling bonds on a step on the (111) surface, when hydrogen is chemisorbed. Both examples testify to the local chemical nature of Shockley surface states in silicon.The authors thank A. N. Sorokin for useful discussions.     

Density functional calculations of dangling bonds for CN and SiN films

Hyperfine interaction constants (HFICs) of dangling bonds for CN and SiN films were calculated by density-functional theory. The averaged ¹⁴N isotropic HFICs for C dangling bonds are almost equal to those for Si dangling bonds. The anisotropic ¹⁴N HFICs calculated for C dangling bonds are larger than those for Si dangling bonds by a factor 2. The calculated results were compared with experimental results obtained by electron spin resonance and electron nuclear double resonance. It was indicated that the carbon dangling bonds are located such that they avoid N atoms in CN films.