大气压氩气介质阻挡辉光放电的一维仿真研究

为了研究氩气(Ar)中介质阻挡大气压辉光放电(APGD)的放电机理, 通过建立一个一维的多粒子自洽耦合流体模型, 采用有限元方法进行数值计算, 得到了气体间隙压降、介质表面电荷密度、放电电流密度随时间的周期变化波形, 以及电子、离子、亚稳态粒子密度和空间电场强度的时空分布. 仿真计算结果表明：介质表面积聚的电荷对于放电的过程的起始及熄灭具有重要作用;当增大外施电压时, 放电击穿时刻提前, 放电电流密度和介质表面电荷密度峰值增大, 表明放电过程更加剧烈;随着阻挡介质相对介电常数的增大, 放电电流密度也随之增大. 各粒子密度及电场的时空分布表明放电过程在外施电压半个周期中只有一次放电, 且存在明显的阴极位降区、负辉区、等离子体正柱区等辉光放电的典型区域, 为大气压辉光放电(APGD).     

Electroconvective flow induced by dielectric barrier injection in silicone oil

It has been demonstrated that dielectric barrier actuators can be used to induce electrohydrodynamics flows in air as well as in gas. These actuators are often called surface non-thermal plasma actuators in gas applications. Plasma actuators have proved their efficiency for aerodynamics flow control in air. However dielectric barrier devices don't generate plasma in liquids. Electroconvective flows are induced by charge injection at the surface electrode tip. These dielectric barrier injectors (DBI) are particularly well adapted for wall jet production vortex, shedding, and mixing layer applications in dielectric liquids. Dielectric barrier actuators have proved their efficiency on various dielectric liquids. In this study, a dielectric barrier device is tested on silicon oil. Instead of the typical wall jet, a reverse flow is observed in specific configurations. Particle Image Velocimetry and Shlieren measurements are achieved to characterize the unusual electroconvective flow.     

Neutralization of charged dielectric materials using a dielectric barrier discharge

Safety and efficiency are two characteristics that must be satisfied by an electric charge neutralizer. The dielectric barrier discharge (DBD), which has the advantage of preventing arc transition, is an interesting tool to safely neutralize unwanted charge. This paper is aimed at studying the efficiency of neutralizing charged polyethylene (PE) granules by using a dielectric barrier discharge. During this study, several factors were considered such as the amplitude and the frequency of the AC voltage, the polarity and the charging mode of the samples, as well as the electrode configuration. Two DBD electrode configurations were considered: simple DBD and a DBD with installed metallic grid. The obtained results show that using the DBD can lead to excellent neutralization results when the grid is installed. With the appropriate voltage amplitude and frequency and with grid installed, the elimination of nearly 99% of the initial surface charges can be achieved. The metallic grid placed between the DBD electrode and the target enhances significantly the neutralization efficiency.     

圆筒状DBD放电特性模拟研究

用XOOPIC软件对同轴圆筒状反应装置DBD放电特性进行了二维模拟研究。在频率为20kHz、正弦电压幅值为5kV的大气压氩气放电中,再现了微放电通道形成和发展过程,其微放电的寿命约为4ns。获得了电子、离子、介质表面电荷密度和电场强度随空间和时间的分布,发现在高压线圈的位置附近电子、离子和介质表面电荷密度存在极值。与典型平板介质阻挡放电相比,微放电中的电子密度、场强增加2~3个数量级。     

Surface charge measurement in surface dielectric barrier discharge by laser polarimetry

Measurements of surface charge in a surface dielectric barrier discharge driven in atmospheric air were successfully demonstrated by a laser polarimetry. AC voltage at a frequency of 2 kHz generated the discharge between an exposed electrode and the dielectric barrier over a buried electrode. Although the discharge behaviors varied depending on the polarity of the exposed electrode, there were no differences in the tendency and amplitude of the surface charge accumulation except the polarity. With higher applied voltage, the amount of surface charge became larger and the charge was distributed farther from the exposed electrode.     

Electric Charging in Dielectric Barrier Discharges with Asymmetric Gamma‐Coefficients

A dielectric barrier discharge with different electrode surfaces is investigated and the dynamic evolution of surface charge on the dielectric surface is measured optically. It is found that the amount of surface charge after the positive and the negative half‐cycle are not equal, i.e. a bias charge emerges. To understand this phenomenon, the transfered charge per half‐cycle is estimated from the Paschen curve and the shape of the driving voltage waveform. It turns out that the charge bias is necessary to compensate for the asymmetry of the discharge conditions due to the different surfaces and hence is required for a balanced charge transfer in the steady state (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dielectric spectroscopy studies of ZnO single crystal

Dielectric relaxation and charge transport induced by electron hopping in ZnO single crystal are measured by using a novocontrol broadband dielectric spectrometer. Typical Debye-like dielectric relaxation originating from electronic hopping between electronic traps and conductive band in surface Schottky barrier region is observed for ZnO single crystal-Au electrode system. However, after insulation of ZnO single crystal by heat treatment in rich oxygen atmosphere, dielectric relaxation and alternating current conductance are observed simultaneously in the dielectric spectra, implying that dielectric relaxation and charge transport can be induced simultaneously by electronic hopping at high temperature in an ordered system. The intrinsic correlation between local dielectric relaxation and long range charge transport offers us a new method to explore complicated dielectrics.     

Mechanism of Striation in Dielectric Barrier Discharge

The mechanism of striations in dielectric barrier discharge in pure neon is studied by a two-dimensional particle- in-cell/Monte Carlo collision （PIC-MCC） model. It is shown that the striations appear in the plasma background, and non-uniform electrical field resulting from ionization and the negative wall charge appear on the dielectric layer above the anode. The sustainment of striations is a non-local kinetic effect of electrons in a stratified field controlled by non-elastic impact with neutral gases. The striations in the transient dielectric barrier discharge are similar to those in dc positive column discharge.     

Charge transport and accumulation in dielectrics upon irradiation by an electron beam

The transient process of charge accumulation in a dielectric with exposed surface is considered for the case of irradiation by a beam of electrons with path lengths less than the specimen thickness. For the case of shallow traps the characteristic method is used to solve the problem of passage of the space charge density front through the specimen volume from a virtual cathode located at a depth equal to the path length of the primary beam electrons to a grounded electrode. Transient patterns of field intensity and space charge density over dielectric layer thickness are found. Special features of the transient process are considered, related to the fact that the charge carriers are being injected into the dielectric by an electron beam. Furthermore, an expression is obtained describing the kinetics of formation of the exposed dielectric surface potential, and the dependence of these kinetics on radiation parameters and dielectric properties are considered. The conclusions of the model are compared to experiment.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 20–25, August, 1988.     

Mechanism of charge exchange at a liquid crystal-electrode interface

It is shown that liquid crystal-electrode charge exchange is accomplished via the mechanism of Schottky emission through a thin dielectric layer. The thin dielectric layer (several nanometers) is formed by adsorption of neutral molecules that either are introduced on purpose or occur in even well-purified liquid crystals. The main part of the barrier determining the charge exchange process is due to the ionization of the cation losing an electron and its transformation to the anion. The barrier parameters and the dielectric layer thickness are estimated for the planar and homeotropic alignments of molecules.     

不同电介质结构下介质阻挡放电特性研究

设计制作了单面有氧化铟锡(ITO)导电介质层的双玻璃介质层的介质阻挡放电装置,研究了其放电特性,并将其与双玻璃介质层和单玻璃介质层的介质阻挡放电进行了比较.从电荷输运的角度分析,上述三种装置分别实现了电荷的二维、零维和三维输运.采用两种不同的双玻璃介质层装置,获得了单个稳定的放电丝.与无ITO导电层的双玻璃结构得到的单个放电丝相比,单面有导电ITO介质的双玻璃结构中,单放电丝呈"T"字型,其光晕是前者光晕的2倍,其放电电流大于前者电流,其放电时间间隔长短交替现象更为明显,且存在强度大小交替的现象.分析表明,壁电荷输运及二次电子发射的不同导致了不同电介质结构放电特性的不同. 关键词： 介质阻挡放电 壁电荷 二次电子发射     

Photocarrier transport in 2D macroporous silicon structures

The mechanisms of photocarrier transport through a barrier in the surface space-charge region (SCR) of 2D macroporous silicon structures have been studied at photon energies comparable to that of the silicon indirect band-to-band transition. It was found that the photoconductivity relaxation time was determined by the light modulation of barrier on the macropore surface; as a result, the relaxation itself obeyed the logarithmic law. The temperature dependence of the photoconductivity relaxation time was determined by the thermionic emission mechanism of the current transport in the SCR at temperatures T > 180 K, and by the tunnel current flow at T < 100 K, with temperature-independent tunnelling probability. The photo-emf was found to become saturated or reverse its sign to negative at temperatures below 130 K because of light absorption due to optical transitions via surface electronic states close to the silicon conduction band. In this case, the surface band bending increases due to the growth of a negative charge of the semiconductor surface. The equilibrium electrons in the bulk and photoexcited holes on the macropore surface recombine through the channel of multistage tunnel recombination between the conduction and valence bands.     

混合电解质溶液中考虑介电饱和度的表面电位评估原理

基于非线性泊松-玻尔兹曼方程，推导了混合电解质溶液中考虑介电饱和度的表面电位的解析表达式. 近似解析解和精确数值解计算出的表面电位在很大范围的电荷密度和离子强度条件下均具有很好的一致性. 当表面电荷密度大于0.30 C/m^{2 时，介电饱和度对表面电位的影响变得尤为重要；当表面电荷密度小于0.30 C/m2时，可忽略介电饱和度的影响，即基于经典泊松-玻尔兹曼方程可获得有效的表面电位解析模型. 因此，0.3 C/m2可作为是否考虑介电饱和度的颗粒临界表面电荷密度值. 在低表面电荷密度时，考虑介质饱和度的表面电位解析模型可自然回归到经典泊松-玻尔兹曼理论的结果，得到的表面电位可以正确地预测一价和二价反离子之间的吸附选择性.}     

Triboelectrification of granular insulating materials as affected by dielectric barrier discharge (DBD) treatment

The aim of this paper is to point out the influence of dielectric barrier discharge treatment on tribocharging of granular insulating materials. Particles of Polyvinyl Chloride (PVC) and Polypropylene (PP) were subjected to an AC dielectric barrier discharge (DBD) plasma treatment in ambient airprior to tribocharging in a vibratory device. The charge to mass ratio was measured for treated and untreated materials. Electrostatic separation of a mixture of granular materials (PVC and PP) to measure the effectiveness of DBD treatment was evaluated by processing treated and untreated PVC/PP granular mixtures in a free-fall electrostatic separator. The obtained results clearly indicate that DBD has the capability to influence surface charging proprieties of polymer granular materials. In case of short treatment time, typically less than 3 s, a marked increase in the charge to mass ratios was observed for both PVC (about 35%) and PP (roughly 45%). In the same way, the quantity of DBD-treated materials, recovered after electrostatic separation, was increased by about 104% and 30% for PVC and PP, respectively, as compared to untreated case. The DBD treatment time is a key factor to increase the tribo electric effect.     

介质阻挡放电中微放电周期特性的光学测量

采用特殊设计的双水电极介质阻挡放电装置,利用光学方法原位、无干扰地测量了大气压空气介质阻挡放电中微放电的单脉冲特性和周期特性,实验上首次发现在介质阻挡放电斑图模式中,微放电在驱动电压的正负半周的放电时刻并不是固定的,相邻两次放电的时间间隔是长短交替的。根据壁电荷对微放电通道相邻两次放电的不同作用,分析了相邻两次放电时刻的联系,很好地解释了相应的实验现象。     

Time Dependence of the Capacitance of a MOS Silicon Tunnel Diode under the Influence of Hydrogen

The results of theoretical and experimental investigations into the time dependence of the capacitance of MOS silicon diodes with a thin tunnel dielectric and a palladium field electrode under the influence of a gas hydrogen-containing mixture are presented. Analytical expressions are derived that describe the time dependence of the capacitance of the space charge region (SCR) of the MOS tunnel diode operating in depletion and enrichment regimes. It is demonstrated that the time dependence of the SCR capacitance of the MOS diode placed in the gas mixture is caused by diffusion of hydrogen atoms from the field electrode to the SiO _x –n-Si interface. The relaxation time of hydrogen atom accumulation at the interface is 47 s for the diode with a SiO _x layer thickness of 3.7 nm placed in the gas mixture with 0.3 vol.% of H₂. It has been established that the flat band voltage and the SCR capacitance of the MOS diode change under the influence of the gas mixture due to the decreased density of surface acceptor states at the SiO _x –n-Si interface, the increased positive charge density in the dielectric, and the decreased contact potential difference.     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal–oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-kappa gate dielectric

By solving Poisson's equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal-oxide semiconductor field-effect transistor (MOSFET) with a high-kappa gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-kappa dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

Investigation of a single dielectric barrier discharge in submillimeter air gaps: Uniform field

The characteristics of a single discharge in 0.01–0.2-cm air gaps are investigated under atmospheric pressure between the metal electrodes and in the presence of a polymer barrier on one of the electrodes. The experimentally determined surface charge density distributions are satisfactorily described by a 2D Gaussian function with the proposed parameters. In the uniform field, the breakdown voltage weakly depends on the presence of a dielectric barrier. At the same time, the change from the positive to negative polarity of the metal electrode leads to a manifold increase in the discharge current and in the surface charge. The breakdown occurs under considerable overvoltage; the estimates indicate the streamer mechanism of the breakdown.