铂掺杂氮化硼纳米管及CO在其表面的吸附行为的理论研究

采用基于密度泛函理论的PBEPBE方法对铂(Pt)掺杂的氮化硼(BN)纳米管进行了理论研究. 计算结果表明, Pt原子突出BN纳米管表面, Pt的d轨道暴露到外面, 使它更容易和外来分子发生相互作用, 提高了纳米管的反应活性. Pt取代掺杂缩小了纳米管的能隙, 从而提高BN纳米管的导电性. 一氧化碳(CO)在Pt掺杂BN纳米管上的吸附行为表明, 2个CO能化学吸附到纳米管表面, 更多的CO分子吸附是物理吸附.     

硼氮纳米管研究进展

介绍了BN纳米管的研究进展,纳米管结构和制备技术发展状况,阐述了包括电弧放电、激光烧蚀、机械球磨、碳纳米管取代反应、热淬火法、碳热法和化学反应法等多种制备方法,展望了BN纳米管的发展前景.     

铁纳米线-氮化硼纳米管复合结构的形成及其压缩性质的模拟研究

通过分子动力学理论计算方法对铁纳米线(FeNW)在氮化硼纳米管(BNNT)内的形成及其复合结构(FeNW@BNNT)的压缩性质进行了模拟研究。通过对充以铁原子的BN(5,5)和BN(8,8)纳米管的进行结构优化可以发现,在BN(5,5)纳米管轴线上能生成稳定的一维FeNW,而BN(8,8)纳米管内形成呈螺旋状的三束绞缠的FeNW。其径向分布函数表明在BN(5,5)内生成的FeNW具有良好的一维性且原子分布均匀等特征。通过对BN(5,5)与FeNW@BN(5,5)轴向压缩及其能量分析,可以发现它们虽具有相同屈曲应变,但屈曲前FeNW@BN(5,5)的弹性系数稍大于BN(5,5),且FeNW@BN(5,5)抗压屈曲能力也明显较强。     

H2与C,BN和GaN纳米管的相互作用势能

基于C,B,N和Ga与H原子间的L-J势函数,系统计算了H2处于(n,n)(n=8,10,12)单壁C,BN和GaN纳米管内部及外部不同处的势能.根据势能变化曲线,分析了3种纳米管氢物理吸附能力的差异,给出了H2在3种纳米管外部的势能表达式.研究结果表明:3种纳米管内部的氢吸附力均分别高于管外;随着纳米管直径的增加,各纳米管管内的氢吸附力均略有下降,而管外变化不明显;GaN,BN和C纳米管依次具有更好的储氢能力.     

杂原子掺杂的含单空位缺陷BN纳米管的非线性光学性质

采用密度泛函理论(DFT)研究了杂原子M(M=Li, Na, K, Be, Mg, Ca, C和Si)在B/N单空位缺陷处的掺杂对(6,0)BN纳米管体系非线性光学性质的影响. 采用B3LYP方法共得到了14种几何构型, 并采用BHandHLYP方法计算了这些结构的第一超极化率β₀值. 研究结果表明, 单纯的B或N缺陷几乎不影响BN纳米管体系的非线性光学性质; 与B缺陷处掺杂的体系相比, 杂原子在N缺陷处的掺杂更有利于提高BN纳米管体系的第一超极化率β₀值; 对于同周期掺杂原子, 还原性越强的原子掺杂对BN纳米管体系的第一超极化率β₀值的改善越明显, 表现为β₀(Ⅰ族)>β₀(Ⅱ族)>β₀(Ⅳ族); 对比同主族掺杂原子, 第三周期元素Na和Mg的掺杂能更有效地提高体系的第一超极化率β₀值, 原因主要在于原子半径和还原性等因素共同决定其对BN纳米管体系第一超极化率β₀值的改善程度. 本文研究结果为有效提高BN纳米管体系的非线性光学性质提供了一种新思路, 为基于BN纳米管的非线性光学材料设计提供了有价值的理论信息.     

BN纳米管内含C纳米管——结构与电学性质

运用密度泛函理论的PW91/DNP方法对C(6,0)@BN(n,0)体系的结构与稳定性进行了研究, 发现最适合与C(6,0)纳米管形成的嵌套体系的锯齿型BN纳米管是BN(15,0)和BN(16,0), 在形成的C(6,0)@BN(15,0) 和 C(6,0)@BN(16,0)中, 碳壁与氮化硼壁之间的距离分别为0.36和0.40 nm. 在最稳定的C(6,0)@BN(16,0)体系中, 发现内层碳纳米管的电子结构并未受到外层氮化硼纳米管的影响, 然而氮化硼纳米管的能隙缩小了0.5 eV. 对C(6,0)@BN(16,0)的轨道分析表明, 碳纳米管与氮化硼纳米管之间的作用力为范德华力.     

BN纳米管的结构与性质

采用CASTEP程序包 ,在密度泛函理论 (DFT)框架内 ,在较高的理论水平对BN(n ,0 ) (n =3～ 17)纳米管的几何结构进行了优化 ,优化在a×a×c的正交超原胞中进行 ,并对其结合能和电学性质进行了计算 .结果发现 ,BN(n ,0 )纳米管的结合能随着n的增大而增大 ,并趋于收敛 .BN(n ,0 )纳米管的禁带宽度随着n的增大而增大 ,并收敛于 5 .3 9eV .     

(BN)n富勒烯和单层BN纳米管的图形理论方法研究

应用图形理论方法对(BN)12等富勒烯和单层BN纳米管的能级分布及其稳定性进行研究,发现(BN)n比同构型的(C2)n稳定,且与用DFT方法计算的结果一致.计算结果表明,采用图形理论方法是一种很有意义的解释和预测BN纳米材料的结构和性质的定性研究方法.     

B2N2分子结构与性质的理论研究

錋氮(BN)及其团簇分子在材料科学中的重要性而引起广泛关注,BN纳米管、纳米线及其团簇已被合成并在对其结构与性质进行了理论研究[1-7]。BN二聚物包括线性、正方形和棱形BN-BN结构,在MP2水平上的理论预测单重态稳定性为菱形(D2h)大于正方形(D2h)大于线性(C∞v)[8],但作者未对优     

钛酸纳米管的化学修饰及发光性能的稳定化

钛酸纳米管表面富有羟基, 利用十六醇与Ti-OH发生脱水反应对钛酸纳米管进行化学修饰. 通过透射电子显微镜、红外光谱和荧光光谱等方法研究了表面修饰对钛酸纳米管的结构及光学性质的影响. 与未修饰的钛酸纳米管相比, 不溶于有机溶剂的钛酸纳米管修饰后溶于氯仿、甲苯中, 为进一步用LB膜技术组装钛酸纳米管提供了条件, 并且钛酸纳米管表面修饰的有机层有效抑制了纳米管表面对水的吸附, 解决了钛酸纳米管在空气中久置或有水气氛下特殊的可见区吸收和荧光发光现象受到影响的问题, 使钛酸纳米管的发光性质稳定, 为钛酸纳米管的广泛应用奠定了基础.     

Comparative study of hydrogen adsorption on carbon and BN nanotubes

The physisorption and chemisorption of hydrogen in BN nanotubes, investigated by density functional theory (DFT), were compared with carbon nanotubes. The physisorption of H2 on BN nanotubes is less favorable energetically than on carbon nanotubes; BN nanotubes cannot adsorb hydrogen molecules effectively in this manner. Chemisorption of H2 molecules on pristine BN nanotubes is endothermic. Consequently, perfect BN nanotubes are not good candidates for hydrogen storage by either mechanism. Other strategies must be utilized if BN nanotubes are to be employed as hydrogen storage media such as utilizing them as supporting media for hydrogen-absorbing metal nanoclusters.     

氮化硼纳米管的研究进展

氮化硼纳米管的研究进展;结构;制备;性能;储氢;综述     

Preparation and electrochemical hydrogen storage of boron nitride nanotubes

Boron nitride (BN) nanotubes were synthesized through chemical vapor deposition over a wafer made by a LaNi5/B mixture and nickel powder at 1473 K. Scanning electron microscopy, transmission electron microscopy, energy-dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were performed to characterize the microstructure and composition of BN nanotubes. It was found that the obtained BN nanotubes were straight with a diameter of 30-50 nm and a length of up to several microns. We first verify that the BN nanotubes can storage hydrogen by means of an electrochemical method, though its capacity is low at present. The hydrogen desorption of nonelectrochemical recombination in cyclic voltammograms, which is considered as the slow reaction at BN nanotubes, suggests the possible existence of strong chemisorption of hydrogen, and it may lead to the lower discharge capacity of BN nanotubes. It is tentatively concluded that the improvement of the electrocatalytic activity by surface modification with metal or alloy would enhance the electrochemical hydrogen storage capacity of BN nanotubes.     

First-principles study of interaction between H2 molecules and BN nanotubes with BN divacancies

The interaction between H(2) molecules and boron nitride (BN) single-walled nanotubes with BN divacancies is investigated with density-functional theory. Our calculations reveal that H(2) molecules adsorb physically outside defective BN nanotubes, and cannot enter into BN nanotubes through bare BN divacancies because the energy barrier is as high as 4.62 eV. After the defects are saturated by hydrogen atoms, the physisorption behavior of H(2) molecules is not changed, but the energy barrier of H(2) molecules entering into BN nanotubes through the defects is reduced to 0.58 eV. This phenomenon is ascribed to hydrogen saturation induced reduction of electrostatic potential around the defects.     

Fluorination and electrical conductivity of BN nanotubes

Fluorination of BN nanotubes has been performed using a catalytic growth method, which leads to the appearance of markedly curved fluorine-doped BN sheets and converts originally insulating BN nanotubes to semiconductors, as confirmed by the comparative electron transport four-probe measurements on doped and undoped individual BN nanotubes.     

True nanocable assemblies with insulating BN nanotube sheaths and conducting Cu nanowire cores

Nanocable models comprised of BN nanotubes filled with close-packed Cu nanowires were investigated by gradient-corrected density functional theory (DFT) computations. The optimal distance between the sidewall of BN nanotubes and the atoms in a copper nanowire is about 0.35 nm, with a weak insertion energy (ca. -0.04 eV per Cu atom). Hence, such nanocables are assembled by weaker van der Waals (vdW) forces, rather than by chemical bonding interactions. The electronic band structures of the BN/Cu hybrid systems are superposition of those of the separate components, the BN nanotubes, and the Cu nanowires. Since charge density analyses show that the conduction electrons are distributed only on the copper atoms, charge transport will occur only in these inner nanowires, which are effectively insulated by the outer BN nanotubes. On the basis of these computational results, BN/Cu hybrid structures should be ideal nanocables.     

毛刺状竹节结构氮化硼纳米管的合成与生长机理

以非晶硼和氧化镍纳米颗粒为原料,在氨气中1100℃下合成了毛刺状竹节结构的氮化硼纳米管. 利用X射线衍射和透射电镜研究了氮化硼纳米管的结构和形貌. 竹节结构纳米管表面的毛刺是六方氮化硼的纳米薄片. 提出了一种基于固态硼和气态二氧化硼扩散的毛刺形貌生长机理.     

Catalyzed collapse and enhanced hydrogen storage of BN nanotubes

The novel morphology of BN nanotubes with a collapsed structure has been discovered by a metal-catalyzed treatment. The collapse causes the dramatic enlargement of a specific surface area of BN nanotubes and remarkably enhances the hydrogen storage capacity of BN nanotubes.     

Selective synthesis of boron nitride nanotubes by self-propagation high-temperature synthesis and annealing process

Four types of BN nanotubes are selectively synthesized by annealing porous precursor in flowing NH₃ and NH₃/H₂ atmosphere at temperature ranging from 1000 to 1200 °C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave-like, bamboo-like and bubble-chain, are characterized by XRD, FTIR, Raman, SEM, TEM and HRTEM. Three phenomenological growth models are proposed to interpret growth scenario and structure features of the four types of BN nanotubes. Selectivity of nanotubes formation is estimated as approximately 80-95%. The precursor containing B, Mg, Fe and O prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in selective synthesis of the as-synthesized BN nanotubes. Chemical reactions are also discussed.     

Thin boron nitride nanotubes with unusual large inner diameters

BN nanotubes, displaying the characteristics of few concentric layers (2–6 layers) but unusual large inner diameters (ranging from 8 to more than 10 nm), are synthesized by a chemical vapor deposition (CVD) method on -Al₂O₃ micrometer-range particles. The inner diameters are at least 5 nm larger than the previously reported BN nanotubes of similar layers. Some BN nanotubes are observed to be filled with B–N–O-based amorphous materials. Crystalline core fillings (in the form of boron carbide nanorods) were also discovered. The discussions suggested that the CVD growth behavior of BN nanotubes may be closely dependent on the underlying substrates, which may be helpful to the possible rational synthesis of BN nanotubes.