硅掺杂的氮化硼纳米管对氯化氰吸附性能的理论研究

为了探索氮化硼纳米管(BNNT)在化学传感器件领域的潜在应用,我们利用密度泛函理论研究了(8,0)单壁BNNT和硅掺杂的(8,0)BNNT对毒性气体氯化氰分子(ClCN)的吸附性能.结果表明,硼位或氮位硅掺杂的BNNT,均对ClCN分子存在较强的化学吸附,而纯氮化硼纳米管对ClCN仅有较弱的物理吸附.态密度的计算进一步表明硅掺杂使纳米管费米能级附近的电子结构发生显著变化,由于杂化态的引入,使带隙明显减小,增强了对毒性ClCN分子的吸附敏感性.硅掺杂的BNNT有望成为检测毒性ClCN分子的潜在资源.     

水热法制备低维氮化硼纳米结构的研究进展

作为一种宽禁带绝缘材料，氮化硼由于其高导热性、强化学惰性和高热稳定性在热界面材料、光催化和电催化以及储能材料方面引起了广泛的研究兴趣.低维氮化硼纳米结构，如二维纳米片、一维纳米管、纳米棒、纳米线、零维纳米球和量子点等，具有高热导率（600 W/mK）和超宽带隙（5～6 eV），在高导热复合材料、热电材料及电子封装材料等领域具有很好的应用前景，其制备技术及相关性能研究是近年来材料科学领域的热点之一.主要详述了目前水热法制备低维氮化硼（BN）纳米结构的研究进展及存在的问题，并指出深入研究合成机理、研发新型水热制备方法将是今后本领域的重点研究方向.     

BN纳米管内含C纳米管——结构与电学性质

运用密度泛函理论的PW91/DNP方法对C(6,0)@BN(n,0)体系的结构与稳定性进行了研究, 发现最适合与C(6,0)纳米管形成的嵌套体系的锯齿型BN纳米管是BN(15,0)和BN(16,0), 在形成的C(6,0)@BN(15,0) 和 C(6,0)@BN(16,0)中, 碳壁与氮化硼壁之间的距离分别为0.36和0.40 nm. 在最稳定的C(6,0)@BN(16,0)体系中, 发现内层碳纳米管的电子结构并未受到外层氮化硼纳米管的影响, 然而氮化硼纳米管的能隙缩小了0.5 eV. 对C(6,0)@BN(16,0)的轨道分析表明, 碳纳米管与氮化硼纳米管之间的作用力为范德华力.     

TiO2纳米管与纳米线的制备及光电化学研究

利用钛箔表面沉积一层TiO2纳米粒子作为晶种,与NaOH反应,通过改变反应温度制备了TiO2纳米管与纳米线.在170℃,48 h的条件下合成了TiO2纳米管.在180℃时得到另一种一维的TiO2纳米线.并用XRD,SEM,SAED,EDS及HRTEM等分析手段对两种产物的成分、形貌、结构进行表征.对TiO2纳米管电极的光电化学性能进行了研究.结果表明,TiO2纳米管与纳米线为锐钛矿型和金红石型的混晶结构.TiO2纳米管单色光的光电转化效率达到10.38%.与钛酸盐纳米管相比,混晶结构TiO2纳米管显示出优良的光电转化性能.     

规则结构钛酸盐自组装聚集体的制备

在水热条件下, 采用不同的钛源, 通过控制溶液碱度和冷却温度等反应条件, 利用无模板自组装技术, 在钛酸盐薄膜表面及溶液相中制备了鸟巢状和绒球状钛酸盐纳米带自组装聚集体以及海胆状钛酸盐纳米管自组装聚集体. 通过引入碳酸钠模板, 制备出形貌新颖的钛酸钠-碳酸钠香蒲状自组装聚集体复合材料. 初步研究了纳米自组装聚集体的形成机理, 认为其形成经历了一维纳米结构(纳米带或纳米管)的生长和一维纳米结构的自组装2个过程.     

高度有序的二氧化钛纳米管阵列的制备及其光催化活性的研究

采用电化学阳极氧化法在钛表面构筑了一种结构有序、微米级的TiO₂纳米管阵列膜层. 考察了制备电压、氧化时间、溶液搅拌等实验参数对TiO₂纳米管阵列形貌和尺寸的影响. 应用SEM和XRD对膜层的形貌和晶型进行了分析和表征, 并通过TiO₂纳米管阵列膜对甲基橙的光催化降解, 研究了TiO₂纳米管阵列膜层结构与光催化活性的关系. 结果表明: 阳极电压和溶液搅拌对制备TiO₂纳米管阵列的结构起到关键的作用. 控制20 V电压制备的TiO₂纳米管阵列膜, 管长达2.6～3.3 μm, 经500 ℃热处理后具有最高的光催化活性, 其光催化性能明显优于一般的TiO₂纳米颗粒膜.     

不同TiO2原料制备一维钛酸盐纳米材料

以不同二氧化钛为原料, 用水热法制备一维钛酸盐纳米材料. 原料一次粒径和晶体结构对一维纳米钛酸盐的形貌和结构的影响很大. 原料的一次粒径越小, 反应过程中产物的形貌和晶相转变越快; 纯锐钛矿相有利于钛酸盐纳米管的形成, 而少量金红石相则有利于纳米管向纳米线的进一步转变和晶相转变.     

NH4F/H3PO4体系中阳极氧化法制备TiO2纳米管阵列

以价廉的Ni板代替常用的Pt片为阴极,纯钛为阳极,采用电化学阳极氧化法在NH4F-H3PO4体系中制备出TiO2纳米管阵列.详细研究了制备参数(溶液酸度、氟离子浓度、外加电压和氧化时间)对所获纳米管阵列形貌的影响.采用场发射扫描电镜(FE-SEM)和X射线衍射(XRD)对样品的形貌和晶相结构进行了表征.在最优化的条件下,可以获得形貌规整、表面干净、有序的TiO2纳米管阵列.纳米管阵列的平均管径为60 nm.管长约530 nm.采用阳极氧化法制备的纳米管阵列是非晶态的.经400℃热处理2 h后,可以转变为锐钛矿相.实验结果还发现,经过热处理后,纳米管阵列变得更为有序,管径扩大至约95 nm.     

CdS/TiO2纳米管复合结构的制备与光电性能研究

利用阳极氧化法在钛金属基底表面制备一层TiO2纳米管阵列薄膜,然后通过水热反应在TiO2纳米管上负载CdS纳米粒子,形成CdS/TiO2纳米管的复合结构。利用SEM、XRD、XPS、UV-Vis等手段对其形貌和结构进行表征。进一步考察了CdS/TiO2纳米管的光电性能和光催化活性,结果表明,相比于TiO2纳米管,CdS/TiO2纳米管复合结构在紫外光和可见光下都具有更好的光催化活性及光电性能。     

硼纳米结构的理论和实验研究

硼元素,作为第三主族中唯一非金属元素,其原子具有特殊的缺电子性质,因而产生了复杂的键合机制。从硼原子之间的双中心-双电子键到平衡体系电子分布的多中心双电子键,硼因此具有多种同素异形体。低维硼纳米结构材料具有不同于体相的独特结构及特殊性质,相关理论和实验研究已成为近年来的研究热点。本文从理论和实验两个方面,系统介绍了零维硼团簇到一维硼纳米管、硼纳米线及二维硼纳米结构的相关研究,主要针对其结构、性质与潜在应用进行综述。目前,仍需系统化探索其制备及稳定等相关问题,力求揭示其固有属性,以发挥硼基纳米结构材料在未来纳米器件和能源催化方面的重要应用。     

Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes

Decoration of nitrogen vacancies by oxygen atoms has been studied by near-edge X-ray absorption fine structure (NEXAFS) around B K-edge in several boron nitride (BN) structures, including bamboo-like and multi-walled BN nanotubes. Breaking of B-N bonds and formation of nitrogen vacancies under low-energy ion bombardment reduces oxidation resistance of BN structures and promotes an efficient oxygen-healing mechanism, in full agreement with some recent theoretical predictions. The formation of mixed O-B-N and B-O bonds is clearly identified by well-resolved peaks in NEXAFS spectra of excited boron atoms.     

A co-precipitation and annealing route to the large-quantity synthesis of boron nitride nanotubes

A novel co-precipitation and annealing route to the large-quantity synthesis of boron nitride nanotubes (BNNTs), using amorphous boron powder, iron nitrate nonahydrate (Fe(NO₃)₃·9H₂O) and urea (CO(NH₂)₂) as the raw materials, was demonstrated. An intermediate Fe(OH)₃·B was firstly prepared through a co-precipitation process and then annealed in flowing ammonia atmosphere at 1200 °C. It was found that the heat treatment at 800 °C during the annealing process could favor the growth of BNNTs. The BNNTs had an average diameter of 70 nm and possessed bamboo and quasi-cylindrical structures. The annealing temperature greatly affected the formation of BNNTs. Only BN particles could be obtained at lower temperature (e.g. 1100 °C), whereas thorn-like nanosheet-decorated BNNTs were fabricated at higher temperature (e.g. 1300 °C). A combination mechanism of solid–liquid–solid (SLS) and vapor–liquid–solid (VLS) model was suggested to be responsible for the growth of BNNTs.     

First-principles study of interaction between H2 molecules and BN nanotubes with BN divacancies

The interaction between H(2) molecules and boron nitride (BN) single-walled nanotubes with BN divacancies is investigated with density-functional theory. Our calculations reveal that H(2) molecules adsorb physically outside defective BN nanotubes, and cannot enter into BN nanotubes through bare BN divacancies because the energy barrier is as high as 4.62 eV. After the defects are saturated by hydrogen atoms, the physisorption behavior of H(2) molecules is not changed, but the energy barrier of H(2) molecules entering into BN nanotubes through the defects is reduced to 0.58 eV. This phenomenon is ascribed to hydrogen saturation induced reduction of electrostatic potential around the defects.     

Thin boron nitride nanotubes with unusual large inner diameters

BN nanotubes, displaying the characteristics of few concentric layers (2–6 layers) but unusual large inner diameters (ranging from 8 to more than 10 nm), are synthesized by a chemical vapor deposition (CVD) method on -Al₂O₃ micrometer-range particles. The inner diameters are at least 5 nm larger than the previously reported BN nanotubes of similar layers. Some BN nanotubes are observed to be filled with B–N–O-based amorphous materials. Crystalline core fillings (in the form of boron carbide nanorods) were also discovered. The discussions suggested that the CVD growth behavior of BN nanotubes may be closely dependent on the underlying substrates, which may be helpful to the possible rational synthesis of BN nanotubes.     

Covalent attachments of boron nitride nanotubes through a carboxylic linker: Density functional studies

Properties of attached boron nitride (BN) nanotubes based on linking two zigzag nanotubes through a carboxylic (–(CO)O–) linker were investigated by performing density functional theory (DFT) calculations. The linking boron and nitrogen atoms at the edges of two zigzag BN nanotubes were linked to the –(C]O)O– linker to make possible the attachments of two BN nanotubes together. Total energies, energy gaps, dipole moments, linking bond lengths and angles, and quadrupole coupling constants were obtained for the optimized structures to determine the properties of the attached BN nanotubes. The results indicated that different properties could be seen for the investigated models based on their linking status. For quadrupole coupling constants, the most significant changes of parameters were observed for the linking atoms among the investigated models of attached BN nanotubes.     

DFT study on the structural and electronic properties of Pt-doped boron nitride nanotubes

First-principles calculations based on density functional theory were carried out to investigate the structural and electronic properties of Pt substitution-doped boron nitride (BN) nanotubes. The electronic and structural properties were studied for substituted Pt in the boron and the nitrogen sites of the (BN) nanotube. The band gap significantly diminishes to 2.095 eV for Pt doping at the B site while the band gap diminishes to 2.231 eV for Pt doping at the N site. The band density increases in both the valence band and the conduction band after doping. The effects of the hardness and softness group 17 (halogen elements) were calculated by density functional theory (DFT).     

氮化硼纳米管的研究进展

本文较全面地综述了氮化硼(BN)纳米管研究的最新进展,详细讨论了BN纳米管的合成、结构、表征、形成机理及应用等方面的研究现状,并对今后的研究方向进行了展望。     

Thermal conductivity of nanostructured boron nitride materials

We have measured the thermal conductivity of bulky pellets made of various boron nitride (BN)-based nanomaterials, including spherical nanoparticles, perfectly structured, bamboo-like nanotubes, and collapsed nanotubes. The thermal conductivity strongly depends on the morphology of the BN nanomaterials, especially on the surface structure. Spherical BN particles have the lowest thermal conductivity while the collapsed BN nanotubes possess the best thermoconductive properties. A model was proposed to explain the experimental observations based on the heat percolation passage considerations.     

Catalytic synthesis of bamboo-like multiwall BN nanotubes via SHS-annealing process

Bamboo-like multiwall boron nitride (BN) nanotubes were synthesized via annealing porous precursor prepared by self-propagation high temperature synthesis (SHS) method. The as-synthesized BN nanotubes were characterized by the field emission scanning electron microscopy (FE-SEM), transmission electron microscope (TEM), high-resolution TEM (HRTEM), X-ray diffraction (XRD), Raman and Fourier transform infrared (FTIR) spectroscopy. These nanotubes have uniform diameters of about 60 nm and an average length of about 10 μm. Four growth models, including tip, base, based tip and base-tip growth models, are proposed based on the catalytic vapor-liquid-solid (VLS) growth mechanism for explaining the formation of the as-synthesized bamboo-like BN nanotubes. Chemical reactions and annealing mechanism are also discussed.     

Multi-walled BN nanotubes synthesized by carbon-free method

Pure multi-walled BN nanotubes were synthesized via a carbon-free chemical vapor deposition process using boron and gallium oxide mixture as reaction precursor. Transmission electron microscopy was used to investigate their structure, morphology and defects. The wall deformation, dependent on tube diameter, was observed and explained in terms of strain relaxation of bond rotation. Opposed to carbon nanotubes, bending of BN nanotubes typically results in fracture at their concave side. Ring defect-related mechanism was proposed to interpret the fracture. The ring defects also result in the formation of a nanocone with 300° disclination. The nanocones end up with BN nanotubes exhibiting the small innermost shell ∼0.4 nm in diameter.