共查询到19条相似文献,搜索用时 171 毫秒
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结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽,发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性,分析了对VCSEL结构的要求;分析了分布参数对频率特性的影响,对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构.
关键词:
量子点
垂直腔面发射激光器
微分增益
3 dB带宽 相似文献
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本文研究了增益波导垂直腔面发射激光器的横向及纵向模式特性。采用二维延伸抛物型复折射率波导结构从理论上分析了增益波导垂直腔面发射激光器中模式的横向电场分布、模式间隔、模式增益对远场分布图和光束发射角、耦合效率等.实验中在阈值电流之上既观测到稳定的基模工作,也观测到高阶非简并模工作等不同的光谱结构及远场分布,理论和实验基本吻合. 相似文献
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围绕高性能GaN基垂直腔面发射激光器(VCSELs),设计了两种具有不同光电耦合强度的InGaN/GaN量子阱(QWs)样品,研究了它们的光学性质。样品A在腔模的两个波腹处各放置两个InGaN耦合量子阱,而样品B在腔模的一个波腹处放置5个InGaN耦合量子阱。计算表明样品A具有较大的相对光限制因子1.79,而样品B为1.47。光学测试发现样品A有着更高的内量子效率(IQE)和更高的辐射复合效率。使用两种样品制作了光泵VCSEL结构,在光激发下实现激射,其中基于样品A的VCSEL有着更低的激射阈值。结果表明有源区结构会显著影响量子阱与光场的耦合作用、外延片的内量子效率、辐射复合寿命和VCSEL激射阈值,同时也说明样品A的有源区结构更有利于制作低阈值的VCSEL器件。 相似文献
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对980nm氧化限制型垂直腔面发射激光器横模进行测试和研究,理论上从时间、空间变量的速率方程出发,利用空间积分法分析了典型电注入参数对弱折射率导引垂直腔面发射激光器(VCSELs)横模行为的影响,通过实验测试,得到VCSELs的横模光场分布情况,并与理论分析进行对比,得出相应的实验结果,在氧化孔径不变的情况下,随着注入电流的增加,载流子分布从有源区中心向边缘移动,模式从低阶基模向高阶模转变,并发生了较强的模式竞争以及载流子空间烧孔效应,最终导致基模强度的降低.另一方面,通过比较不同注入孔径下高阶模的发生时
关键词:
横模
垂直腔面发射激光器
空间烧孔现象
模式竞争 相似文献
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为了分析质子轰击垂直腔面发射激光器(VCSEL)中注入电流引起的激光模式竞争过程,在三维空间中对VCSEL激射后光电热进行了研究。给出仿真光电热的方程之后,在室温连续工作条件下,对电流孔半径r为4μm、阈值电流Ith为4.5 m A的VCSEL进行自洽求解。当注入电流Iin分别为5.0,5.5,6.0 m A时,得到了对应的外加电压和输出光功率,并绘制了VCSEL的电势、注入电流、载流子、光场和热场的空间分布,给出了连续工作下输出光功率随注入电流变化的曲线。仿真结果表明:随着注入VCSEL中的电流增加,电流密度增大,激光的横向基模和横向一阶模式同时增强。横向一阶模式增加的强度及扩展的范围大于横向基模,激光输出能量逐渐向横向一阶模式过渡,横向模式竞争的同时产生载流子空间烧孔,因此在电流孔半径r≥4μm的VCSEL中,连续工作激光模式不稳定。 相似文献
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设计并研制了室温连续工作的单模13 μm垂直腔面发射激光器(VCSEL),阈值电流为051 mA,最高连续工作温度达到82℃,斜率效率为029 W/A.采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al(Ga)As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO2/TiO2介质薄膜上反射腔镜形成13 μm VCSEL结构.讨论并分析了谐振腔模式与量子阱增益峰相对位置对器件性能的影响.
关键词:
垂直腔面发射激光器
晶片直接键合
应变补偿多量子阱 相似文献
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In this paper, stable single-mode operation at high temperatures is produced by the surface-relief-integrated vertical cavity surface emitting laser(VCSEL). The gain-cavity mode detuning technique is employed to realize high operating temperatures for the VCSEL. The surface relief is etched in the centre of the top side as a mode discriminator for the fundamental mode output, and the threshold current minimum is 1.94 mA at high temperatures by the gain-cavity mode detuning technique. Maximum single-fundamental-mode output power of 0.45 mW at 80℃ is obtained, and the side mode suppression ratios(SMSRs) are more than 30 dB with increasing temperature and current, respectively. 相似文献
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垂直腔面发射激光器中顶层相位对模式特性的影响 总被引:4,自引:1,他引:3
研究了垂直腔面发射激光器中不同的顶层厚度对激光器模式特性的影响。结果表明空气界面反射与分布布拉格反射器(DBR)的反射率反相时,将导致阈值增益增加几倍,而且模式光场强度在出射端面有反常的增强,但对光场进入分布布拉格反射器的等效厚度影响不大。精确腐蚀顶层厚度可供替调节分布布拉格反射器周期数,以改善器件特性。 相似文献
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Excitation of various transverse modes in possible nitride vertical-cavity surface-emitting lasers (VCSELs) is investigated and compared using the effective frequency optical model. In the comparative analysis of laser mode selectivity, two distinctly different configurations of possible nitride VCSELs are considered: the traditional VCSEL design with both (n-side and p-side) ring contacts as well as the uniform-current-injection (UCI) VCSEL design. Our simulation reveals that, during the continuous-wave device operation at room temperature, a multi-mode operation dominated by higher-order transverse modes is typical for traditional nitride VCSEL configurations whereas a desirable single-mode (based on the fundamental LP01 mode) operation turns out to be characteristic for the wide current range in UCI ones. The above different threshold device behaviours are an immediate consequence of essentially different current-spreading phenomena in both VCSEL designs, resulting in completely different not only gain profiles but also temperature distributions within the laser active regions of both VCSELs. Seemingly similar behaviour has been also reported in arsenide VCSELs but it is expected to be much more severe in the case of nitride ones as a result of much higher both electrical resistivities of p-type nitrides and their temperature derivatives of refractive indices. 相似文献
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报道了自行研制的894 nm高温垂直腔面发射激光器(VCSEL)以及基于此类器件的芯片级铯原子钟系统的应用实验结果.根据芯片级铯原子钟对VCSEL在特定高温环境下产生894.6 nm线偏振激光的要求,对器件的量子阱增益及腔模位置等材料结构参数进行了优化,确定增益-腔模失谐量为-15 nm,使器件的基本性能在高温环境下保持稳定.研制的VCSEL器件指标为:20—90?C温度范围内阈值电流保持在0.20—0.23 m A,0.5 m A工作电流下输出功率0.1 mW;85.6?C温度环境下激光波长894.6 nm,偏振选择比59.8:1;采用所研制的VCSEL与铯原子作用,获得了芯片级铯原子钟实施激光频率稳频的吸收谱线和实施微波频率稳频的相干布居囚禁谱线. 相似文献
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The paper describes an impact of various possible inaccuracies in manufacturing of verticalcavity surface-emitting diode lasers
(VCSELs), like thicknesses and compositions of their layers different from assumed ones, on VCSEL room-temperature (RT) continuous-wave
(CW) threshold performance. To this end, the fully self-consistent comprehensive optical-electrical-thermal-recombination
VCSEL model has been applied. While the analysis has been carried out for the 1.3-μm oxide-confined intra-cavity contacted
GaInNAs/GaAs VCSEL, its conclusions are believed to be more general and concern most of modern VCSEL designs. As expected,
the VCSEL active region has been found to require the most scrupulous care in its fabrication, any uncontrolled variation
in compositions and/or thicknesses of its layers is followed by unaccepted RT CW lasing threshold increase. Also spacer thicknesses
should be manufactured with care to ensure a proper overlapping of the optical standing wave and both the gain and lossy areas
within the cavity. On the contrary, less than 5% thickness changes in distributed-Bragg-reflectors are followed by nearly
insignificant changes in VCSEL RT CW threshold. However, exceeding the above limit causes a rapid increase in lasing thresholds.
As expected, in all the above cases, VCSELs equipped with larger active regions have been confirmed to require more careful
technology. The above results should enable easier organization of VCSEL manufacturing. 相似文献
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数值研究了各向异性光反馈注入的垂直表面发射激光器(VCSEL)的矢量偏振模转换机理,研究结果表明,首先,当注入电流接近阈值电流时,由VCSEL的外部参数和偏振器控制的光反馈注入量中各偏振模的能量决定VCSEL 输出的偏振态.其次,由偏振器控制的各向异性光反馈注入引起的VCSEL输出偏振态呈周期性变化.另外,当由偏振器控制的反馈注入量中的x^偏振和y^偏振模能量相当时, x^偏振模和y^偏振模之间竞争激烈,而激光器外部微小的扰动都会打破这两种偏振模竞争
关键词:
各向异性光反馈
垂直表面发射激光器
矢量偏振模 相似文献
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通过测量、对比材料生长和器件制备条件基本相似,但是谐振腔腔模波长与增益峰值波长相对位置明显不同的两类氧化物限制型应变AlInGaAs/AlGaAs量子阱垂直腔面发射激光器(VCSEL)在261—369K温度范围内输出光功率-电流的变温曲线,同时结合测试得到的两类样品的白光反射谱、光荧光谱以及模拟计算得到的不同温度下VCSEL反射谱和增益谱,分析了输出光功率、阈值电流、斜率效率和激射波长随温度变化的关系,掌握了新材料AlInGaAs的温度特性,得到了谐振腔腔模波长和增益峰值波长的相对位置对VCSEL输出特性,尤其是对阈值的影响规律,指出获得室温工作阈值最低且稳定的VCSEL的一个方法是调整谐振腔腔模波长和增益峰值波长的相对位置,并利用这种方法获得了特征温度T0=333K的AlInGaAs/AlGaAs量子阱VCSEL器件.
关键词:
AlInGaAs
垂直腔面发射激光器
特征温度 相似文献