光电耦合对InGaN/GaN量子阱光学性能的影响

围绕高性能GaN基垂直腔面发射激光器(VCSELs),设计了两种具有不同光电耦合强度的InGaN/GaN量子阱(QWs)样品,研究了它们的光学性质。样品A在腔模的两个波腹处各放置两个InGaN耦合量子阱,而样品B在腔模的一个波腹处放置5个InGaN耦合量子阱。计算表明样品A具有较大的相对光限制因子1.79,而样品B为1.47。光学测试发现样品A有着更高的内量子效率(IQE)和更高的辐射复合效率。使用两种样品制作了光泵VCSEL结构,在光激发下实现激射,其中基于样品A的VCSEL有着更低的激射阈值。结果表明有源区结构会显著影响量子阱与光场的耦合作用、外延片的内量子效率、辐射复合寿命和VCSEL激射阈值,同时也说明样品A的有源区结构更有利于制作低阈值的VCSEL器件。     

Preparation and Dielectric Properties of Nanostructured ZnO Whiskers

By a novel controlled combustion synthesis method, a large number of nanostructured ZnO whiskers with different morphologies, such as tetra-needles, long-leg tetra-needles and multi-needles, are prepared without any additive in open air at high temperature. The morphologies and crystalline structures of the as-prepared ZnO nanostructured whiskers are investigated by SEM and XRD. The possible growth mechanism on the nanostructured ZnO whiskers is proposed. The experimental results indicate that the dielectric constants and losses of the nanostructured ZnO whiskers are very low, demonstrating that the nanostructured ZnO whiskers are low-loss materials for microwave absorption in X-band. However, obvious microwave absorption in nanostructured ZnO whiskers is observed. The quasi-microantenna model may be attributed to the microwave absorption of the ZnO whiskers.     

Dielectric Response and Broadband Microwave Absorption Properties of Three-Layer Graded ZnO Nanowhisker/Polyester Composites

We design and prepare three-layer graded ZnO nanowhisker/polyester composites. The dispersion configuration of ZnO nanowhiskers in the polyester is investigated, and their microwave reflectivity curves are also measured. Experimental results have shown that the graded dispersion with ZnO nanowhiskers contributes to broadband microwave absorption. In other words, the absorption band depends on the graded dispersion configuration of ZnO nanowhiskers in polyester matrix.