Needlelike bicrystalline GaN nanowires with excellent field emission properties

Large-yield and crystalline GaN nanowires have been synthesized on a Si substrate via a simple thermal evaporation process. The majority of the GaN nanowires has bicrystalline structures with a needlelike shape, a triangular prism morphology, and a uniform diameter of approximately 100 nm. Field-emission measurements show that the bicrystalline GaN nanowires with sharp tips have a lower turn-on field of approximately 7.5 V/microm and are good candidates for low-cost and large-area electron emitters. It is believed that the excellent filed emission property is attributed to the bicrystalline structure defects and sharp tips.     

Excellent field-emission properties of P-doped GaN nanowires

GaN nanowires with P doping were synthesized via a simple thermal evaporation process. The P-doped GaN nanowires have average diameters of approximately 100 nm and lengths up to tens of micrometers. Scanning electron microscope and high-resolution field-emission transmission electron microscope analyses revealed that P doping results in a rough surface morphology of GaN nanowires. Field-emission measurements showed that P doping effectively decreases the turn-on field of GaN nanowire to 5.1 V/mum, holding promise of application as an electron emitter. The rough surface is responsible for enhancement of the field-emission properties of GaN nanowires.     

Photoluminescence and Raman scattering from catalytically grown Zn(x)Cd(1-x)Se alloy nanowires

Zn(x)Cd(1-x)Se alloy nanowires, with composition x = 0, 0.2, 0.5, 0.7, and 1, have been successfully synthesized by a chemical vapor deposition (CVD) method assisted with laser ablation. The as-synthesized alloy nanowires, 60-150 nm in diameter and several tens of micrometers in length, complied with a typical vapor-liquid-solid (VLS) growth mechanism. The Zn(x)Cd(1-x)Se nanowires are single crystalline revealed from high-resolution transmission electron microscopic (HRTEM) images, selected area electron diffraction (SAED) patterns, and X-ray diffraction (XRD) measurement. Compositions of the alloy nanowires can be adjusted by varying the precursor ratios of the laser ablated target and the CVD deposition temperature. Crystalline structures of the Zn(x)Cd(1-x)Se nanowires are hexagonal wurtzite at x = 0, 0.2, and 0.5 with the [0 1 -1 0] growth direction and zinc blende at x = 0.7 and 1 with the [1 -1 1] growth direction. Energy gaps of the Zn(x)Cd(1-x)Se nanowires, determined from micro-photoluminescence (PL) measurements, change nonlinearly as a quadratic function of x with a bowing parameter of approximately 0.45 eV. Strong PL from the Zn(x)Cd(1-x)Se nanowires can be tuned from red (712 nm) to blue (463 nm) with x varying from 0 to 1 and has demonstrated that the alloy nanowires have potential applications in optical and sensory nanotechnology. Micro-Raman shifts of the longitudinal optical (LO) phonon mode observed in the Zn(x)Cd(1-x)Se nanowires show a one-mode behavior pattern following the prediction of a modified random element isodisplacement (MREI) model.     

Unconventional zigzag indium phosphide single-crystalline and twinned nanowires

Unconventional zigzag indium phosphide (InP) single-crystalline and twinned nanowires were produced via thermal evaporation of indium phosphide in the presence of zinc selenide. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Studies found that two type of nanowires exist in the products, namely, the periodic-rhombus-decorated single-crystalline InP (type I) nanowires and jagged twinned InP (type II) nanowires. Both of them have preferential 111 growth directions. The optical properties were also investigated at room temperature, and they show that the nanowires display a strong emission at approximately 750 nm, which is quite different from that observed in all previous reports related to the InP nanostructures.     

Sol–gel route to prepare well-ordered nanowires with anodic aluminum oxide template

In this work, we report a sol?Cgel route to fabricate oxide nanowires of BiFeO₃ using two-step anodic aluminum oxide as template. We prepared oxide nanowires with uniform dimensions that can vary from 35 to 100?nm in diameter and with 4???m in length, as confirmed by scanning electron microscopy and transmission electron microscopy measurements. Magnetization measurements, performed in a vibrating sample magnetometer, show that this nanostructures present ferromagnetism at room temperature.     

High-quality ultralong Bi2S3 nanowires: structure, growth, and properties

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi2S3 nanowires are narrow-band semiconductors with a band gap E(g) approximately 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 ohms cm and an emission current of 3.5 microA at a bias field of 35 V/microm. This current corresponds to a current density of about 10(5) A/cm2, which makes the Bi2S3 nanowire a potential candidate for applications in field-emission electronic devices.     

Sol-gel template synthesis and photoluminescence of n- and p-type semiconductor oxide nanowires.

A sol-gel template technique has been put forward to synthesize single-crystalline semiconductor oxide nanowires, such as n-type SnO2 and p-type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single-crystal with average diameters in the range of 100-300 nm and lengths of over 10 microm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n-type semiconductor SnO2, and a PL emission at 407 nm for p-type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet-light emission at room temperature is attributed to near-band-edge emission for SnO2 nanowires and the 3d(7)4s-->3d8 transition of Ni2+ for NiO nanowires.     

Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor

We report the synthesis, structural characterization, and electrical transport properties of free-standing single-crystal CoSi nanowires synthesized via a single-source precursor route. Nanowires with diameters of 10-150 nm and lengths of greater than 10 mum were synthesized through the chemical vapor deposition of Co(SiCl(3))(CO)(4) onto silicon substrates that were covered with 1-2 nm thick SiO(2). Transmission electron microscopy confirms the single-crystal structure of the cubic CoSi. X-ray absorption and emission spectroscopy confirm the chemical identity and show the expected metallic nature of CoSi, which is further verified by room-temperature and low-temperature electrical transport measurements of nanowire devices. The average resistivity of CoSi nanowires is found to be about 510 muOmega cm. Our general and rational nanowire synthesis approach will lead to a broad class of silicide nanowires, including those metallic materials that serve as high-quality building blocks for nanoelectronics and magnetic semiconducting Fe(1-x)Co(x)Si suitable for silicon-based spintronics.     

Preparation and properties of ternary ZnMgO nanowires

Zn0.84Mg0.16O and Zn0.12Mg0.88O nanowires with different morphology have been synthesized by a catalyst-free thermal evaporation method using Zn and Mg metals as the raw materials. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) measurements were used to determine the structure and optical properties of the obtained products. The obtained nanowires have diameters in a range of 30 nm-80 nm, crystallized well as hexagonal and cubic phase, with preferred orientation along the c-axis and a-axis for the two samples of Zn0.84Mg0.16O and Zn0.12Mg0.88O, respectively. Room-temperature PL at wavelengths of 384.4 and 495.8 nm has been observed for the sample of Zn0.84Mg0.16O. Upon annealing in Ar ambient, the emission peaks in PL spectra show a clearly blue shift.     

ZnO-聚苯胺同轴纳米线及其列阵的制备和表征

以阳极氧化铝膜 (AAO)作模板 ,制备聚苯胺 (PANI)纳米管和PANI纳米管列阵 ;同时利用溶胶_凝胶法制备ZnO_PANI同轴纳米线和同轴纳米线列阵 .PANI纳米管和ZnO_PANI同轴纳米线的形貌通过透射电子显微镜表征 .PANI纳米管的外径约 3 0nm ,内径约 1 0nm ;ZnO_PANI同轴纳米线直径约 60nm .实验发现 ,较之ZnO纳米线 ,同轴AAO模板中纳米线列阵的可见光发射谱带兰移 ,强度显著增强 ,这可能和PANI链上的NH基团与表面Zn2 +离子之间的相互作用有关 ,以及由于ZnO纳米微粒在PANI上富集、PANI的光生载流子部分转移给ZnO微粒所致 .实验还发现分散在NaOH溶液中的同轴纳米线 ,其可见光发射谱带比AAO模板中同轴纳米线的谱带兰移更甚     

Colloidal synthesis and structural control of PtSn bimetallic nanoparticles

PtSn bimetallic nanoparticles with different particle sizes (1-9 nm), metal compositions (Sn content of 10-80 mol %), and organic capping agents (e.g., amine, thiol, carboxylic acid and polymer) were synthesized by colloidal chemistry methods. Transmission electron microscopy (TEM) measurements show that, depending on the particle size, the as-prepared bimetallic nanocrystals have quasi-spherical or faceted shapes. Energy-dispersive X-ray (EDX) analyses indicate that for all samples the signals of both Pt and Sn can be detected from single nanoparticles, confirming that the products are actually bimetallic but not only a physical mixture of pure Pt and Sn metal nanoparticles. X-ray diffraction (XRD) measurements were also conducted on the bimetallic particle systems. When compared with the diffraction patterns of monometallic Pt nanoparticles, the bimetallic samples show distinct shifts of the Bragg reflections to lower degrees, which gives clear proof of the alloying of Pt with Sn. However, a quantitative analysis of the lattice parameter shifts indicates that only part of the Sn atoms are incorporated into the alloy nanocrystals. This is consistent with X-ray photoelectron spectroscopy (XPS) measurements that reveal the segregation of Sn at the surfaces of the nanocrystals. Moreover, short PtSn bimetallic nanowires were synthesized by a seed-mediated growth method with amine-capped bimetallic particles as precursors. The resulting nanowires have an average width of 2.3 nm and lengths ranging from 5 to 20 nm.     

有序CdS纳米线阵列的制备和光学特性

应用直流电沉积法在多孔氧化铝模板中制备了高度有序的CdS纳米线阵列,并由XRD、Raman、SEM、TEM和HRTEM等进行物理化学表征.结果表明,沉积在多孔氧化铝模板中的CdS呈六角结构,c轴沿孔长度方向定向生长.紫外吸收光谱研究表明,随着纳米线尺寸的减小,纳米线阵列的吸收边向短波长方向移动,荧光光谱测量显示,CdS纳米线阵列的荧光强度高于氧化铝模板,而且在可见光区的荧光特性与激发波长无关.     

Surface-enhanced Raman scattering and polarized photoluminescence from catalytically grown CdSe nanobelts and sheets

We have successfully fabricated single-crystalline CdSe nanowires, nanobelts, and sheets by a chemical vapor deposition (CVD) method assisted with laser ablation. The synthesized CdSe nanostructures have hexagonal wurtzite phase as characterized by X-ray diffraction (XRD). CdSe nanobelts can range in length from several tens to a hundred micrometers, in thickness from 40 to 70 nm, and a tapered width which is approximately 3 microm at one end and tapers off to approximately 100 nm at a catalytic gold particle. Both selected area electron diffraction (SAED) and high-resolution transmission electron microscopic (HRTEM) measurements show that the single-crystalline hexagonal belts and sheets grew along the [0.1-1.0] direction with side surface of +/-(0 0 0 1) and top surface of +/-(2 -1 -1 0). While the growth mechanism of nanobelts complies with a combination of vapor-liquid-solid (VLS) and vapor-solid (VS) processes, the formation of sheets is primarily based on the VS mechanism. For comparison, the phonon modes of CdSe nanobelts and bulk powder have been measured by surface-enhanced Raman scattering (SERS) and normal Raman scattering (NRS) spectroscopies with off- and near-resonant excitations. A blue-shift of 2.4 cm(-1) for the longitudinal optical (LO) phonon of CdSe nanobelts, relative to bulk CdSe, is attributed to a lattice contraction in the belt structure, which is confirmed by the XRD measurement. Room-temperature microphotoluminescence (PL) at approximately 1.74 eV from single CdSe nanobelts shows a 3-fold enhancement compared to that from bulk CdSe powder and displays a partial polarization dependence of emission angles.     

Preparation of single-crystalline NdVO4 nanorods, and their emissions in the ultraviolet and blue under ultraviolet excitation

This paper describes a facile sacrifical (NH4)0.5V2O5 nanowires approach to single-crystalline NdVO4 nanorods. The nanorods have a rectangular cross section of about 30 x 30 nm2 to 100 x 200 nm2, and length ranging from 400 to 700 nm. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) show that the nanorods grew respectively along the [312] and [101] direction on the (NH4)0.5V2O5 nanowires. Ultraviolet (362 nm) and blue (467 nm) emissions can be observed under excitation of 310 nm at room temperature, suggesting that the nanorods should be good candidates for fabricating UV and blue nanodevices.     

Growth and optical properties of wurtzite-type CdS nanocrystals

This paper reports wurtzite-type CdS nanostructures synthesized via a hydrothermal reaction route using dithiol glycol as the sulfur source. The reaction time was found to play an important role in the shape of the CdS nanocrystals: from dots to wires via an oriented attachment mechanism. This work has enabled us to generate nanostructures with controllable geometric shapes and structures and thus optical properties. The CdS nanostructures show a hexagonal wurtzite phase confirmed by X-ray diffraction and show no evidence for a mixed phase of cubic symmetry. The Raman peak position of the characteristic first-order longitudinal optical phonon mode does not change greatly, and the corresponding full width at half-maximum is found to decrease with the CdS shape, changing from nanoparticles to nanowires because of crystalline quality improvement. The photoluminescence measurements indicate tunable optical properties just through a change in the shape of the CdS nanocrystals; i.e., CdS nanoparticles show a band-edge emission at approximately 426 nm in wavelength, while the CdS nanowires show a band-edge emission at approximately 426 nm as well as a weaker trap-state green emission at approximately 530 nm in wavelength. These samples provide an opportunity for the study of the evolution of crystal growth and optical properties, with the shape of the nanocrystals varying from nearly spherical particles to wires.     

Template-free preparation of bunches of aligned boehmite nanowires

A simple method based on a hydrothermal process using alkali salts as mineralizers is proposed for the synthesis of aligned bunches of boehmite (gamma-AlOOH) nanowires without a template's assistance. Most bunches of aligned boehmite nanowires are constructed by two separated shorter bundles with widths of 700 to approximately 800 nm and lengths of about 1 microm. XRD patterns, FTIR spectra, and SEM and TEM images were used to characterize the products. The specific surface area and pore-size distribution of the obtained product as determined by gas-sorption measurements show that the boehmite bundles possess a high BET surface area and porosity properties. The importance of adding Na2B4O7 salts for the formation of bundle morphologies has been discussed.     

Preparation, structure, and optical properties of nanoporous gold thin films

Thin nanoporous gold (np-Au) films, ranging in thickness from approximately 40 to 1600 nm, have been prepared by selective chemical etching of Ag from Ag/Au alloy films supported on planar substrates. A combination of scanning electron microscopy (SEM) imaging, synchrotron grazing incidence small angle X-ray scattering, and N2 adsorption surface area measurements shows the films to exhibit a porous structure with intertwined gold fibrils exhibiting a spectrum of feature sizes and spacings ranging from several to hundreds of nanometers. Spectroscopic ellipsometry measurements (300-800 nm) reveal the onset of surface plasmon types of features with increase of film thicknesses into the approximately 200 nm film thickness range. Raman scattering measurements for films functionalized with a self-assembled monolayer formed from 4-fluorobenzenethiol show significant enhancements which vary sharply with film thickness and etching times. The maximum enhancement factors reach approximately 10(4) for 632.8 nm excitation, peak sharply in the approximately 200 nm thickness range for films prepared at optimum etching times, and show high spot to spot reproducibility with approximately 1 microm laser spot sizes, an indication that these films could be useful as durable, highly reproducible surface-enhanced Raman substrates.     

Single-crystalline vanadium dioxide nanowires with rectangular cross sections

We report the synthesis of single-crystalline VO2 nanowires with rectangular cross sections using a vapor transport method. These nanowires have typical diameters of 60 (+/-30) nm and lengths up to >10 mum. Electron microscopy and diffraction measurements show that the VO2 nanowires are single crystalline and exhibit a monoclinic structure. Moreover, they preferentially grow along the [100] direction and are bounded by the (01) and (011) facets. These VO2 nanowires should provide promising materials for fundamental investigations of nanoscale metal-insulator transitions.     

Large-area Sb2Te3 nanowire arrays

High-density large-area nanowire arrays of thermoelectric material Sb(2)Te(3) have been successfully prepared using electrochemical deposition into the channels of the porous anodic alumina membrane. The morphologies, structure, and composition of the as-prepared Sb(2)Te(3) nanowires have been characterized using field-emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Individual Sb(2)Te(3) nanowires are single crystalline and continuous with uniform diameters ( approximately 50 nm) throughout the entire length. The atomic ratio of Sb to Te is very close to the 2:3 stoichiometry.     

Vapor-solid growth of Sn nanowires: growth mechanism and superconductivity

A noncatalytic and template-free vapor transport process has been employed to prepare single-crystalline Sn nanowires with diameters of 10-20 nm. The growth of one-dimensional Sn nanowires follows the mechanism similar to the vapor-solid (V-S) mechanism. Two-dimensional square-shaped nanostructures were also found to form in the region of lower deposition temperatures. The rich morphology may be attributed to the competition in growth rate among different crystallographic planes. Structural characterization with high-resolution transmission electron microscopy showed that the nanowires and nanosquares grew in a preferential direction of [200]. The superconducting transition temperatures for Sn nanowires and Sn nanosquares were about 3.7 K, which was very close to that of bulk beta-Sn. Magnetization measurements showed that the critical magnetic fields for both Sn nanowires and Sn nanosquares increased significantly as compared to that of bulk Sn.