共查询到20条相似文献,搜索用时 62 毫秒
1.
X. Cao X. M. Li X. D. Gao Y. W. Zhang X. J. Liu Q. Wang L. D. Chen 《Applied Physics A: Materials Science & Processing》2009,97(4):883-887
Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxidation of evaporated Ti films. Effects of the compliance current on the resistive switching
behavior of the Pt/TiO2/Pt sandwich structures were studied in detail. The reset current increased when the compliance current increased from 10 mA
to 20 mA. When the compliance current exceeded 20 mA, the switching behavior disappeared, which could be attributed to the
change of the conducting behavior in the low-resistance state. A resistance change ratio of as high as 102 was obtained between the high-resistance state and the low-resistance state. The study of the effect of compliance current
contributes to obtaining stable and reliable resistive switching behavior for nonvolatile memory applications. 相似文献
2.
Carsten Kügeler Roland Rosezin Eike Linn Rainer Bruchhaus Rainer Waser 《Applied Physics A: Materials Science & Processing》2011,102(4):791-809
The paper reports on the characterization of bipolar resistive switching materials and their integration into nanocrossbar
structures, as well as on different memory operation schemes in terms of memory density and the challenging problem of sneak
paths. TiO2, WO3, GeSe, SiO2 and MSQ thin films were integrated into nanojunctions of 100×100 nm2. The variation between inert Pt and Cu or Ag top electrodes leads to valence change (VCM) switching or electrochemical metallization
(ECM) switching and has significant impact on the resistive properties. All materials showed promising characteristics with
switching speeds down to 10 ns, multilevel switching, good endurance and retention. Nanoimprint lithography was found to be
a suitable tool for processing crossbar arrays down to a feature size of 50 nm and 3D stacking was demonstrated. The inherent
occurrence of current sneak paths in passive crossbar arrays can be circumvented by the implementation of complementary resistive
switching (CRS) cells. The comparison with other operation schemes shows that the CRS concept dramatically increases the addressable
memory size to about 1010 bit. 相似文献
3.
Dinglin Xu Ying Xiong Minghua Tang Baiwen Zeng 《Applied Physics A: Materials Science & Processing》2014,114(4):1377-1381
Lanthanum-doped ZnO (Zn0.99La0.01O) polycrystalline thin films were deposited on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties (R ON, R OFF, V Set, and V Reset), higher R OFF/R ON ratio and sharp switching transition. 相似文献
4.
N.V. Giridharan M. Subramanian R. Jayavel 《Applied Physics A: Materials Science & Processing》2006,83(1):123-126
Bismuth titanate thin films co-modified by La and Nd, Bi3.15(La0.425Nd0.425)Ti3O12 (BLNT) were grown on Pt/Ti/SiO2/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization (2Pr) of 90 μC/cm2 at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×109 switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. PACS 73.40.Rw; 73.61.-r; 77.55. +F; 77.80.-E; 81.20.Fw 相似文献
5.
Lee DooSung Sung YongHun Lee InGun Kim JongGi Sohn Hyunchul Ko Dae-Hong 《Applied Physics A: Materials Science & Processing》2011,102(4):997-1001
The characteristics of resistive switching of TiN/HfO2/Ti/HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposited in situ during
the reactive sputtering of HfO2 films. The current–voltage measurements showed that the Ti interlayers enhanced the memory window but reduced the endurance
of SET/RESET operations. The energy filtered images by TEM showed asymmetric oxygen accumulation at the Ti/HfO
x
interfaces. Subsequent heat treatment improved the endurance of SET/RESET operation of TiN/HfO2/Ti/HfO2/Pt/Ti stacks. 相似文献
6.
B. C. Luo J. Wang X. S. Cao K. X. Jin C. L. Chen 《Applied Physics A: Materials Science & Processing》2013,113(3):779-785
Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d 33,f ~55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies. 相似文献
7.
Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process 下载免费PDF全文
SUN Bing LIU Li-Feng HAN De-Dong WANG Yi LIU Xiao-Yan HAN Ru-Qi KANG Jin-Feng 《中国物理快报》2008,25(6):2187-2189
Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stablefilamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage. 相似文献
8.
Zhong Mo Xinrui Miao Lirong Liang Wenli Deng Baojun Li Dinghua Bao 《Applied Physics A: Materials Science & Processing》2013,111(4):1113-1117
Bi3.95Er0.05Ti3O12 (BErT) thin films were prepared on Pt/Ti/SiO2/Si and indium-tin-oxide (ITO)-coated glass substrates at room temperature by pulsed laser deposition. These thin films were amorphous with uniform thickness. Excellent dielectric characteristics have been confirmed. The amorphous BErT thin films deposited on the Pt/Ti/SiO2/Si and ITO-coated glass substrates exhibited almost the same dielectric constant of 52 with a low dielectric loss of less than 0.02 at 1 kHz. Meanwhile, the dielectric properties of the thin films had an excellent bias voltage stability and thermal stability. The amorphous BErT thin films might have potential applications in microelectronic and optoelectronic devices. 相似文献
9.
采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO2/Si(100)衬底上的铁电性能优良的Sr2Bi4Ti5O18 (SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明:薄膜具有单一的层状钙钛矿结构,且为随机取向;薄膜表面光滑,无裂纹,厚度约为725nm;铁电性能测试显示较饱和、方形的电滞回线,当外电场强度为275kV/cm时
关键词:
溶胶-凝胶法
铁电薄膜
2Bi4Ti5O18')" href="#">Sr2Bi4Ti5O18 相似文献
10.
Chen Kai-Huang Cheng Chien-Min Shih Chia-Chi Tsai Jen-Hwan 《Applied Physics A: Materials Science & Processing》2011,103(4):1173-1177
In this study, the ferroelectricity of as-deposited Bi3.9La0.1Ti2.9V0.1O12 (BLTV), Bi3.9Ti2.9V0.1O12 (BTV), and Bi4Ti3O12 (BIT) thin films was prepared and compared by rf magnetron sputtering technology. For the BLTV, BTV, and BIT thin films deposited
on Pt/Ti/SiO2/Si and SiO2/Si substrate, the physical and electrical characteristics of lanthanum doped BTV (BLTV) were better than those of BIT and
BTV thin films. Regarding the physical properties, the micro-structure of as-deposited BTV and BLTV thin films were obtained
and compared by XRD patterns and SEM images. The BLTV and BTV thin films were also exhibited clear the ferroelectricity. The
remanent polarization (P
r
) of as-deposited BLTV thin films was 11 μC/cm2 as the measured frequency of 100 kHz. It was higher than those of BTV thin films. Finally, the polarization of BLTV thin
film capacitor decreased by 9%, while that of the BTV decreased by 15% after the fatigue test with 109 switching cycles. 相似文献
11.
《Current Applied Physics》2019,19(11):1286-1295
We report the coexistence of resistive switching and magnetism modulation in the Pt/Co3O4/Pt devices, where the effects of thermal annealing and film thickness on the resistive and magnetization switching were investigated. The sol-gel derived nanocrystalline Co3O4 thin films obtained crack-free surface and crystallized cubic spinel structure. The 110 nm Co3O4 film based device annealed at 600 °C exhibited optimum resistive switching parameters. From I–V curves fitting and temperature dependent resistance, the conduction mechanism in the high-voltage region of high resistance state was dominated by Schottky emission. Magnetization-magnetic field loops demonstrated the ferromagnetic behaviors of the Co3O4 thin films. Multilevel saturation magnetization of the Co3O4 thin films can be easily realized by tuning the resistance states. Physical resistive switching mechanism can be attributed to the rejuvenation and annihilation of conductive filament consisting of oxygen vacancies. Results suggest that Pt/Co3O4/Pt device shows promising applications in the multifunctional electromagnetic integrated devices. 相似文献
12.
Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films 下载免费PDF全文
Polycrystalline ferroelectric Bi3.25La0.75Ti3O12 thin films are prepared on Pt/Ti/SiO2/Si substrates by the conventional metalorganic decomposition method.It is observed that with the increase of switching pulse width,the remnant polarisation and the coercive field increase.A wider switching pulse can result in poorer fatigue properties,which comes from more charged defects diffusing to and being trapped on domain walls.On the other hand,when the compressive stress is applied to films,the fatigue properties can be improved.This phenomenon is due to the reorientation of domains under stress. 相似文献
13.
Ferroelectric properties of Nd-substituted bismuth titanate thin films processed at low temperature 总被引:1,自引:0,他引:1
Nd-substituted bismuth titanate Bi3.54Nd0.46Ti3O12 (BNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by a sol–gel method. The BNT thin films processed at a low annealing temperature of ∼600 °C showed good ferroelectric properties. The randomly oriented BNT single phases and the improved ferroelectric properties were confirmed by X-ray diffraction and polarization–electric field hysteresis loops, respectively. The remanent polarization of the BNT thin films is 64 μC/cm2, which is larger than that of Bi3.25La0.75Ti3O12 (BLT) thin films. After 1010 read/write switching cycles, the effective non-volatile charges showed no polarization fatigue. Regardless of the low annealing temperature of 600 °C, the BNT thin films had good ferroelectric properties with high remanent polarizations and strong fatigue resistances. PACS 77.84.Dy 相似文献
14.
G.S. Wang X.J. Meng Z.Q. Lai J. Yu J.L. Sun S.L. Guo J.H. Chu 《Applied Physics A: Materials Science & Processing》2003,76(1):83-86
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films have been grown on Pt/Ti/SiO2/Si substrates by chemical solution methods. X-ray diffraction analysis shows that BLT thin films are polycrystalline with
(171)-preferential orientation. Atomic force microscopy investigation shows that they have large grains about 120 nm in size.
A Pt/BLT/Pt capacitor has been fabricated and showed excellent ferroelectricity, with a remnant polarization and coercive
field of 24 μC/cm2 and 116 kV/cm, respectively. The capacitor shows no polarization fatigue up to 109 switching cycles. The optical constants (n,k) of the BLT thin films in the wavelength range 0.35–1.7 μm were obtained by
spectroscopic ellipsometry measurements, and the band-gap energy was found to be about 3.25 eV.
Received: 16 October 2001 / Accepted: 6 January 2002 / Published online: 3 June 2002
RID="*"
ID="*"Corresponding author. Fax: +86-21/65830-734, E-mail: gswang@mail.sitp.ac.cn 相似文献
15.
Multilayered BaTiO3(BTO)/Bi0.5K0.5TiO3 (BKT) thin films have been fabricated on Pt/Ti/SiO2/Si substrates using a metalloorganic decomposition process. XRD investigation of the resultant BTO/BKT multilayered thin films shows that they retain a perovskite-related structure type. They also exhibit a well-defined, polarization–electric field hysteresis loop with a measured remnant polarization (2Pr) of 5 µC/cm2 at an applied electric field of 250 kV/cm. The measured dielectric constant and dielectric loss at 10 kHz is 470 and 0.07 respectively. These multilayer BTO/BKT films maintain an excellent fatigue-free character even after 109 switching cycles. The mechanism associated with the enhancement of the electrical properties of the synthesized BTO/BKT films is also discussed. 相似文献
16.
《Current Applied Physics》2018,18(1):102-106
The present study reports the resistive switching behaviour in Titanium Dioxide (TiO2) material, with possible implementations in non volatile memory device. The Cu/TiO2/Pt memory device exhibit uniform and stable bipolar resistive switching behaviour. The current-voltage (I-V) analysis shows two discrete resistance states, the High Resistance State (HRS) and the Low Resistance State (LRS). The effect of an additional AlN layer in the resistive memory cell is also investigated. The Cu/TiO2/AlN/Pt device shows a multilevel (tri-state) resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the formed filaments is confirmed by performing a resistance vs. temperature measurement. The bilayer device shows improved reliability over the single layer device. The formation of high thermal conductive interfacial oxy-nitride (AlON) layer is the main reasons for the enhancement of resistive switching properties in Cu/TiO2/AlN/Pt cell. The performance of device was measured in terms of endurance and retention, which exhibits good endurance over 105 cycles and long retention time of 105 s at 125 °C. The above result suggests the feasibility of Cu/TiO2/AlN/Pt devices for multilevel non volatile ReRAM application. 相似文献
17.
Xinman Chen Hong Zhou Guangheng Wu Dinghua Bao 《Applied Physics A: Materials Science & Processing》2011,104(1):477-481
A heterojunction structure of p-NiO/n-Mg0.6Zn0.4O with an aim to tuning or improving the resistive switching properties was fabricated on Pt/TiO2/SiO2/Si substrates by the sol-gel spin-coating technique. The Pt/NiO/Mg0.6Zn0.4O/Pt heterojunction thin-film device shows excellent resistive switching properties, such as a reduced threshold current of
1 μA for device initiation, a small dispersion of reset voltage ranging from 0.54 to 0.62 V, long retention time and a high
resistance ratio of high-resistance state to low-resistance state about six orders of magnitude. These results indicate that
the resistive switching properties can be greatly improved by constructing the p-NiO/n-Mg0.6Zn0.4O heterojunction for nonvolatile memory applications. The physical mechanism responsible for colossal resistive switching
properties of the heterojunction was analyzed based on interfacial defect effect and formation and rapture of conductive filaments. 相似文献
18.
利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论.
关键词:
铁电性能
4Ti3O12薄膜')" href="#">Bi4Ti3O12薄膜
3.25La0.75Ti3O12薄膜')" href="#">Bi3.25La0.75Ti3O12薄膜
sol-gel法
La掺杂 相似文献
19.
Ying Li Gaoyang Zhao Jian Su Erfeng Shen Yang Ren 《Applied Physics A: Materials Science & Processing》2011,104(4):1069-1073
Top electrode (TE) material on the resistive switching behavior of (TE)/CuO/SnO2:F/Si substrate has been studied. We investigated the switching properties of CuO films deposited by sol-gel process. Two
kinds of top electrode (TE) material on the resistive switching behaviors have been studied. The nonpolar and bipolar resistive
switching phenomenon was observed in CuO thin films with different top electrodes. The filamentary mechanism was used to explain
the two kinds of resistive switching behaviors. For the Pt/CuO/ATO device, it showed the nonpolar resistive switching where
conducting path is formed and disappear due to the oxygen vacancy. For the Cu/CuO/ATO device, the resistance reduction is
due to the existing Cu to form conduction Cu-rich pathways. An opposite bias takes the existing Cu back to the Cu electrode
to its high-resistance state. CuO thin films are also observed by XRD, AFM and XPS. 相似文献
20.
In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours. 相似文献