| Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films |
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| 作者姓名： | 吴秀梅 陈华 翟亚 吕笑梅 刘云飞 朱劲松 |
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| 作者单位： | Physics Department, Southeast University, Nanjing 211189,
China;Physics Department, Southeast University, Nanjing 211189,
China;Physics Department, Southeast University, Nanjing 211189,
China;National Laboratory of Solid State Microstructures, Physics
Department, Nanjing University, Nanjing 210093, China;National Laboratory of Solid State Microstructures, Physics
Department, Nanjing University, Nanjing 210093, China;National Laboratory of Solid State Microstructures, Physics
Department, Nanjing University, Nanjing 210093, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant No.~50871029), the
National Basic Research Program of China (Grant Nos.~2010CB923401
and 2009CB929501) and the Cyanine-Project Foundation of Jiangsu
Province of China (Grant No.~1107020060). |
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| 摘 要： | Polycrystalline ferroelectric Bi3.25La0.75Ti3O12 thin films are prepared on Pt/Ti/SiO2/Si substrates by the conventional metalorganic decomposition method.It is observed that with the increase of switching pulse width,the remnant polarisation and the coercive field increase.A wider switching pulse can result in poorer fatigue properties,which comes from more charged defects diffusing to and being trapped on domain walls.On the other hand,when the compressive stress is applied to films,the fatigue properties can be improved.This phenomenon is due to the reorientation of domains under stress.
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| 关 键 词： | ferroelectric films polarisation domains |
| 收稿时间： | 6/3/2009 12:00:00 AM |
Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films |
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| Wu Xiu-Mei,Chen Hua,Zhai Ya,Lü Xiao-Mei,Liu Yun-Fei,Zhu Jin-Song.Effects of switching pulse width and stress on properties of Bi3.25La0.75Ti3O12 thin films[J].Chinese Physics B,2010,19(3):36802-036802. |
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| Authors: | Wu Xiu-Mei Chen Hua Zhai Ya Lü Xiao-Mei Liu Yun-Fei Zhu Jin-Song |
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| Institution: | National Laboratory of Solid State Microstructures, Physics
Department, Nanjing University, Nanjing 210093, China; Physics Department, Southeast University, Nanjing 211189,
China |
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| Abstract: | Polycrystalline ferroelectric
Bi3.25La0.75Ti3O12 thin films are prepared on
Pt/Ti/SiO2/Si substrates by the conventional metalorganic
decomposition method. It is observed that with the increase of
switching pulse width, the remnant polarisation and the coercive
field increase. A wider switching pulse can result in poorer
fatigue properties, which comes from more charged defects diffusing
to and being trapped on domain walls. On the other hand, when the
compressive stress is applied to films, the fatigue properties can
be improved. This phenomenon is due to the reorientation of domains
under stress. |
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| Keywords: | ferroelectric films polarisation domains |
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