缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C60异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39V分别提高到0.58V、0.55V,转换效率从0.36%提高到0.44%,短路电流从1.92mA/cm2分别降低到1.77mA/cm2、1.81mA/cm2,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10nm时,器件短路电流密度减少到0.35mA/cm2.开路电压随着厚度的增加逐渐增加,从1nm时的0.43V增加10nm时0.63V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

Electro-optical characterization and analysis of CuPc-based solar cells with high photovoltage

Organic solar cells using the CuPc and PTCBI semiconductor layers were studied. A high open circuit voltage of 1.15 V was obtained in a device with ITO/PEDOT:PSS/CuPc (15 nm)/PTCBI (7 nm)/Al structure. Results were interpreted in terms of a modified CuPc-Al Schottky diode for the thin PTCBI case and a CuPc-PTCBI heterojunction for the thick PTCBI case. Also, the formation of a thin aluminum oxide layer under the aluminum electrode was postulated. This layer has a beneficial aspect wherein shunting losses are reduced and a high photovoltage is enabled. However, it adds greatly to the series resistance to a point where the short circuit current density is reduced. CuPc Schottky diodes with an ITO/PEDOT:PSS/CuPc/Al structure yielded a high V _oc of 900 mV for a CuPc layer of thickness 140 nm. The V _oc increased with increase in CuPc layer thickness.     

Barrier photovoltaic effects in PZT ferroelectric thin films

The photoelectric characteristics (independent of ferroelectric polarization) of metal-ferroelectric-metal thin film structures upon exposure to radiation in different ranges of mercury arc lamp spectrum are studied for the Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectrics. The PZT films on platinized silicon substrates were prepared by the sol-gel technique. The relaxations of the short-circuit current and the open-circuit voltage are investigated at different intensities of light with wavelengths in the range 300–1200 nm. It is found that the open-circuit voltage returns to its original value after the cessation of light exposure and a short-term holding of structures in the short-circuited state. The factors responsible for the photocurrent and the photoemf are analyzed, and the conclusion is made that they are predominantly contributed by the barrier photovoltaic effects associated with the presence of the p-n junction in the bulk of films and the Schottky barrier in the film region adjacent to the lower platinum electrode.     

Effect of surface roughness of TiO2 films on short-circuit current density of photoelectrochemical cell of ITO/TiO2/PVC-LiClO4/graphite

This paper reports the effect of surface topography of titanium dioxide films on short-circuit current density of photoelectrochemical solar cell of ITO/TiO₂/PVC-LiCLO₄/graphite. The films were deposited onto ITO-covered glass substrate by screen-printing technique. The films were tempered at 300 °C, 350 °C, 400 °C, 450 °C and 500 °C for 30 min to burn out the organic parts and to achieve the films with porous structure. The surface roughness of the films were studied using scanning electron microscope (SEM). Current–voltage relationship of the devices were characterized in dark at room temperature and under illumination of 100 mW cm⁻² light from tungsten halogen lamp at 50 °C. The device utilising the TiO₂ film annealed at 400 °C produces the highest short-circuit current density and open-circuit voltage as it posses the smoothest surface topography with the electrolyte. The short-circuit current density and open-circuit voltage of the devices increase with the decreasing grain size of the TiO₂ films. The short-circuit current density and open-circuit voltage are 0.6 μA/cm² and 109 mV respectively.     

InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

In this paper,InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied.The short-circuit density,fill factor and open-circuit voltage (V oc) of the device are 0.7 mA/cm 2,0.40 and 2.22 V,respectively.The results exhibit a significant enhancement of V oc compared with those of InGaN-based hetero and homojunction cells.This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V oc of an In-rich In x Ga 1 x N solar cell.The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm).The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.     

Temperature dependence of GaSb and AlGaSb solar cells

Sb-based alloys offer great potential for photovoltaic and thermophotovoltaic applications. In this paper, we study the performance of Al_xGa_1-xSb (x = 0, 0.15, and 0.50) single-junction solar cells over a temperature range of 25–250 °C. The dark current-voltage, one-sun current-voltage, and external quantum efficiency measurements were acquired at different temperatures. Correlations between experimental and numerical results are made to draw conclusions about the thermal behavior of the cells. It is shown that, while the bandgaps decrease linearly with temperature leading to the reduction of open-circuit voltages, the short-circuit current densities decrease with non-linear trends. The temperature-dependent dark current densities were extracted by fitting the dark current-voltage curves to single- and double-diode models to give an insight into the effect of intrinsic carrier concentration (n_i) on the cell performance. We find that the n_i has a significant impact on temperature-dependent cell performance. These findings could lay a groundwork for the future Sb-based photovoltaic systems that operate at high temperatures.     

Influence of thermal effect on the efficiency of a solar cell

The short-circuit current and open-circuit voltage of a solar cell based on the p-n junction are studied theoretically, taking into account the thermoemf originating due to the temperature difference between the front and back surfaces of the solar cell. It is shown that the consideration of the thermal motion of photogenerated carriers leads to the increase in the collection coefficient. Calculations show that at the irradiation intensity 5 × 10²⁰ photon/cm² s and at the temperature gradient ～ 30–40°C for silicon solar cells the open circuit voltage increases by ～ 6–7% and the short circuit current by ～40–50%.     

由窄带隙芴基共聚物制备的有效光伏电池

对基于9, 9-二辛基取代芴与4, 7-二硒吩-2,1,3-苯并噻二唑(SeBT)的共聚物(PFSeBT)的光伏电池，着重研究了阴极与共混比例对器件性能的影响，研究表明，当共混比例为PFSeBT: PCBM=1:2、并且采用LiF/Al做阴极时，器件的性能最优：开路电压1.00 V，为短路电流密度为4.42 mA/cm2，能量转换效率为1.67% (AM1.5，100 mW/cm2)，短路电流密度与入射光强间存在幂指数关系，幂指数为0.887，所有器件的光敏响应延均展至680 nm以上。上述研究结果表明，PFSeBT是一种非常有希望的聚合物光伏电池电子给体相材料。     

Effect of CdS deposition temperature for thermally grown Cu(In,Ga)Se2 and two-step chalcogenized Cu(In,Ga)(S,Se)2 absorbers on solar cell performances

CdS buffer layer of varying thickness ranging from 23 to 58 nm deposited at different substrate temperature were prepared as n-type junction partner for thermally grown Cu(In,Ga)Se₂ and two-step chalcogenized Cu(In,Ga)(S,Se)₂ photovoltaic absorber films and the effect of deposition temperature and time on the CdS growth behavior and solar cell performance were evaluated. High deposition temperature resulted in a thicker CdS layer and more importantly lower density and shallower depth of open voids, which attributed to the improved open-circuit voltage and fill factor due to reduced interface recombination. The solar cell efficiency of thermally grown absorber saturated at about 30 nm thickness of CdS, while that of chalcogenized absorber gradually increased with CdS thickness up to 60 nm without significant loss of short-circuit current density.     

TiO2表面质子化对染料敏化太阳能电池性能及吸附染料稳定性的影响

采用致密平整TiO₂薄膜作为染料敏化太阳能电池光电极,并研究了HCl处理表面质子化对电池性能的影响. 结果表明,HCl处理后电池的短路电流显著提升,电池的开路电压则有轻微的下降,电池电流提升了31%,而能量转化效率则提升了25%. 这是因为TiO₂的表面质子化增强了吸附染料与TiO₂间的电学耦合,提高了染料中激发电子向TiO₂导带的注入速率. 而电压的下降,一方面是由于质子化会引起TiO₂导带能级     

结构参数对p-i-n结构InGaN太阳能电池性能的影响及机理

研究了器件结构参数对p-i-n结构InGaN单结太阳能电池性能的影响及物理机制. 模拟结果发现: 随着InGaN禁带宽度的增加, InGaN电池的短路电流减小, 但同时开路电压增加, 当InGaN层的禁带宽度为1.5 eV左右时, 同质p-i-n结InGaN电池的效率最高, 并计算了不同厚度的i层对InGaN电池效率的影响. 进一步的计算表明, 适当采用带宽更大的p-InGaN层形成异质p-i-n结InGaN电池可以获得更高效率, 但是p-InGaN层带宽过大也会导致电池的效率急剧下降. 研究还发现, 采用禁带宽度更大的n-InGaN层可以形成背电场, 从而增加p-i-n结InGaN太阳电池的效率. 研究结果表明, 适当选择p-InGaN和n-InGaN禁带宽度形成异质p-i-n结可以提高InGaN太阳能电池效率.     

CuO薄膜的制备及其光伏特性

通过反应磁控溅射在n型硅和玻璃衬底上制备了p型CuO薄膜.使用X射线衍射仪和紫外-可见光-近红外光度计研究了p型CuO薄膜的结构和光学特性,得出其平均晶粒尺寸和光学带隙分别为8 nm和1.36 eV.通过研究其电压-电流关系确定了在p型CuO薄膜和n型硅衬底之间形成了p-n结.在AM 1.5光照条件下p-CuO/n-Si电池的开路电压为0.33 V,短路电流密度为6.27 mA/cm², 填充因数和能量转化效率分别为0.2和0.41%.     

Radial junction silicon solar cells with micro-pillar array and planar electrode interface for improved photon management and carrier extraction

We demonstrate radial p-n junction silicon solar cells with micro-pillar array with higher short-circuit current and open-circuit voltage than comparable planar silicon solar cells. Micro-pillar array, fabricated by RIE, acts as an effective anti-reflection coating for visible light with less than 6% reflection. Compared to devices with planar surface, devices with micro-pillar array show a 27% enhancement in short circuit current. The radial p-n junction of the micro-pillars also improves extraction probability of the photogenerated carriers, which further increases the short circuit current. Typically, micro-pillar solar cells suffer from high recombination losses at the Si/metal interface, resulting in poor V_OC. Our devices prevent these recombination losses by planarizing the Si/metal interface, leading to an open circuit voltage of 622?mV, the highest ever reported for micro-pillar solar cells. This planarized contact also reduces the series resistance associated with radial junctions, leading to series resistance of ≤0.50?Ω-cm² and fill factors up to 76.7%.     

Application of Passive Schemes for Pyroelectric Conversion of Low-Potential Heat

The paper presents the results of experimental pyroelectric studies of PZT piezoceramics by the methods of open-circuit voltage and short-circuit current. Pyroresponses resulted from action of modulated laser radiation on a pyroelement. It is shown that using altering the temperature of even a single pyroelement by 8.5 K enables production of a maximum electricenergy output power of about 16 μW on a 10 MΩ resistor at an open-circuit voltage of ～ 90 V and a short-circuit current of ～ 0.18 μA. The presented research contributes to the development of pyrogenerators for conversion of thermal energy using commercially available piezo-ceramics.     

Manganite heterojunction photodetectors for femtosecond pulse laser measurements

We report a sensitive photodetector, based on a manganite junction La_2/3Ca_1/3MnO₃/Si, for femtosecond (fs) pulse laser energy per pulse and average power measurements. The La_2/3Ca_1/3MnO₃/Si photodetector exhibits D^? (normalized detectivity) greater than 5.229×10⁹ cm Hz^1/2 W^?1. The open-circuit photovoltage and short-circuit photocurrent responsivities reach ～268 V/mJ and ～275 A/mJ for single pulse irradiation, respectively, and the open-circuit photovoltage responsivity reaches ～1.7 V/W for average power illumination. The experimental results make the manganite junction a promising fs laser measurement detector and reference standard for calibrating fs lasers.     

PTCBI作为阴极修饰层对Rubrene/C70器件性能的影响

制备了结构为ITO/MoO₃(6 nm)/Rubrene (30 nm)/C₇₀ (30 nm)/PTCBI(x nm)/Al (150 nm)器件, 研究了四羧基苝的衍生物PTCBI作为阴极修饰层对Rubrene/C₇₀有机太阳能电池的作用. 实验结果显示, 在C₇₀与Al电极之间插入PTCBI 后, 电池性能得到明显改善; 分析表明, 插入PTCBI后, 活性层与阴极形成了良好的欧姆接触, 提高了器件的内建电场, 同时PTCBI避免了激子与Al电极的接触, 减少了在制备过程中高动能Al对C₇₀的破坏. 进一步考察了PTCBI厚度对电池的性能的影响, 结果显示, 厚度为6 nm的PTCBI 层器件性能最佳, 其开路电压(V_OC)、填充因子(FF)、短路电流密度(J_SC)与功率转换效率(ηP)与未插入PTCBI修饰层的器件相比分别提高了70.4%, 55.5%, 125.1%, 292.2%. 当PTCBI的厚度大于6 nm时, 激子解离后产生的自由电子会在PTCBI与阴极界面积累, 导致器件J-V曲线出现S形.     

非晶/结晶共混对聚合物光伏电池性能的影响

以局域规整聚（3-己基噻吩） （P3HT）制备了TiO₂/聚合物型双层结构光伏电池.利用稳态电流-电压测试和动态强度调制光电压谱,结合差热分析、吸收光谱和荧光光谱, 研究了非晶支化聚亚乙基亚胺（BPEI）作为P3HT膜层的添加成分对TiO₂/P3HT双层电池性能的影响.由于P3HT链的高结晶性,使得TiO₂/P3HT界面接触不好,导致电池性能差.当在P3HT中共混重量比W_BPEI/P3HT=1％—5％的BPEI时,电池性能得到显著改善;尤其是当W_BPEI/P3HT= 1％时,电池表现出近0.8V的开路电压和20μA/cm²的短路电流.结果表明BPEI对电池性能的影响不是源于P3HT-BPEI共混体系光学性能的变化,而主要是由于其改变了TiO₂/P3HT界面接触性能.BPEI对TiO₂/P3HT界面接触有两个相互竞争的影响,这取决于P3HT-BPEI共混体系的组成.一方面,通过降低P3HT的结晶度和增强与TiO₂表面的相互作用,改善P3HT链在TiO₂ 表面的附着;另一方面,当BPEI含量过高时,BPEI在TiO₂表面的附着量将增加,反而会阻碍P3HT与TiO₂表面的接触.良好的TiO₂/P3HT界面接触有利于提高激子的界面分离效率、光生电子的寿命和电池效率.本文结果有望为聚合物光伏电池性能的改善提供新的认识和方法. 关键词： 聚（3-己基噻吩） 二氧化钛 共轭聚合物 光伏电池     

Theoretical simulation of photovoltaic response of graphene-on-semiconductors

Using the fundamental models for voltage and current, we report on the photovoltaic behavior of graphene-on-semiconductor-based devices. The graphene-n-Si and graphene-n-GaAs systems are studied for open-circuit voltage (V _OC) and short-circuit current density (J _SC) under low- and high-level injection conditions. The effects of semiconductor doping density and surface recombination velocity on the V _OC of both systems are investigated. The V _OC for graphene-n-Si under low- and high-level injection conditions are found to be 0.353 V and 0.451 V, respectively, whereas the V _OC for graphene-n-GaAs under low- and high-level injection conditions are 0.441 V and 0.471 V, respectively. The J _SC for graphene-n-Si under low- and high-level injection conditions are calculated as 3 mAcm^?2 and 4.78 mAcm^?2, respectively, whereas the J _SC for graphene-n-GaAs under low- and high-level injection conditions are 5.2 mAcm^?2 and 6.68 mAcm^?2, respectively. These results are in good agreement with the reported experimental work.     

Polarization-enhanced bulk photovoltaic effect of BiFeO3 epitaxial film under standard solar illumination

In this Letter, we report the polarization-enhanced bulk photovoltaic effect (BPV) in pristine BiFeO₃ (BFO) epitaxial film under standard 1 sun AM 1.5 G illumination. High-quality epitaxial BFO films are grown on (001)-oriented niobium doped-SrTiO₃ substrates by pulsed laser deposition. The best BFO film based photovoltaic device achieves a power conversion efficiency of 0.0062% under standard illumination. Besides, it is found that the number of bipolar pulses plays a key role in improving the short-circuit current density and open-circuit voltage. These results are beneficial for further understanding of physical origin of the photovoltaic properties in ferroelectric oxides.