Ce：Fe：LiNbO3晶体光衍射效应的研究

减小Ｃｅ：Ｆｅ：ＬｉＮｂＯ３晶片的厚度，扩大泵浦光束直径，时由光爬行应晶体产生衍射自增强。单光束辐照Ｃｅ：Ｆｅ：ＬｉＮｂＯ３晶体时，出现变偏振现象等各向异性自衍射。本文对上述现象的形成机理进行了探讨。     

强辐照场下氟化铈（CeF3）的荧光特性

研究了国产ＣｅＦ３晶体在４．３ｋＧｙ的辐照剂量下的荧光特性及其在室温下辐照损伤的恢复性能，测量显示辐照对荧光光谱和衰减时间不产生影响，但色心的形成使晶体透光性能变差。对辐照损伤的机理进行了探讨。     

锗酸盐晶体压致非晶化的研究

高压拉曼散射研究表明．ＣｕＧｅＯ３，Ｌｉ２ＧｅＯ３和Ｌｉ６Ｇｅ２Ｏ７三种晶体分别在７，１２和１１ＧＰａ压力下转变为非晶。在高于起始转变压力以上一定范围压致非晶是可逆的，ＣｕＧｅＯ３，Ｌｉ２ＧｅＯ３和Ｌｉ６Ｇｅ２Ｏ７压致非晶的不可逆转变压力分别为１４．１，２０和２０ＧＰａ。压致非晶ＣｕＧｅＯ３的重新晶化温度在６００℃附近。锗酸及系列晶体的压致非晶化与它们的成份和结构有关，随着在这一系列晶体中Ｌｉ２Ｏ含量的增加，压致非晶化的压力趋于减小。     

CexY3—xAl5O12中Ce^3＋的4f多重态耦合对其磁矩和磁光性能的影响

计算了ＣｅｘＹ３－ｘＡｌ５Ｏ２晶体中Ｃｅ＾３＋由晶场导致的４ｆ欧重态之间的耦合对Ｃｅ＾３＋离子基态磁矩和磁光Ｆａｒａｄａｙ旋转的影响及其温度特性。结果表明，Ｃｅ＾３＋４ｆ＾２Ｆ７／２和＾２Ｆ５／２多重态的耦合，使Ｃｅ＾３＋的基态磁和左在温度３００Ｋ和２０Ｋ时分别     

MgF2晶体的激光损伤与加固研究

报道了ＭｇＦ２晶体１．０６μｍ激光损伤阈值和损伤形貌。研究了用ＣＯ２、ＸｅＣｌ和Ｃｕ蒸气三种不同的激光对ＭｇＦ２进行激光预辐照加固和酸腐蚀加固。结果表明，Ｃｕ蒸气激光加固效果最佳，蕨是酸腐蚀和ＸｅＣｌ激光预辐照，并对加固机理进行了分析。     

HCl＋Xe掺杂CO矩阵晶体中Xe＋2Cl－电子态跃迁

报道ＨＣｌ＋Ｘｅ掺杂ＣＯ矩阵晶体中，在３０８ｎｍ激光的激发下，首次观测到准分子Ｘｅ＋２Ｃｌ－的特征辐射荧光谱。双光子诱导电荷转移合作吸收反应：Ｘｅ＋ＨＣｌ＋２ｈν→αＸｅ＋（ＨＣｌ）－中，双光子吸收截面大于５×１０－４２ｃｍ４ｓ［６］。     

Sr_3Ga_2Ge_4O_（14）晶体中Cr~（3＋）和Cr~（4＋）吸收光谱

采用提拉法生长了掺Ｃｒ的Ｓｒ３Ｇａ２Ｇｅ４Ｏ１４低温石榴石结构型单晶，测量了它的吸收光谱及其偏振特性，系统描述了该晶体在可见和近红外波段各吸收带的特征，指出Ｃｒ在此晶体晶格中主要存在两种价态Ｃｒ３＋和Ｃｒ４＋，Ｃｒ４＋在近红外的吸收将影响到Ｃｒ３＋的发光。     

实时图像反转与实时图像高低通滤波

报道了以Ｃｅ，Ｆｅ：ＬｉＮｂＯ３薄晶体作记录介质，利用Ｔｉ，Ｃｕ：ＫＮＳＢＮ晶体猫式自泵浦位相共轭镜供反向读出光新型实时光学处理器，该处理器可以实现图像反转，图像高，低通滤滤等操作。文中还给出了基于全息记录与擦除、自衍射与尺寸效应等的机理解释。     

1000幅数字图像的晶体体全息存储与恢复

利用Ｆｅ：ＬｉＮｂＯ３光折变晶体和角度多重方法，在晶体人的一个公共体积内实现了１０００多幅数字图像的存储与重建。由于同时采用差分编码与纠错编码，因而系统抗噪能力细，误码率低。整个同计算机控制，自动化程度高。     

退火α—Ge／Cu叠层膜中输运性质的反常

本研究了退火α－Ｇｅ／Ｃｕ（α－Ｇｅ是非晶体态Ｇｅ）叠层中输运性质，获得以下新的结果：（１）α－Ｇｅ／Ｃｕ室温电阻Ｒ３００Ｋ与退火温度Ｔα之间关系出现反常；（２）α－Ｇｅ／Ｃｕ在退火过程中既出现互扩散，又存在固相反应和多相晶化；（３）实验首次发现在α－Ｇｅ／Ｃｕ膜中的分形现象，相应于分形结构，电阻率出现极小。     

Experimental Studies on Radiation Damages of CsI(Tl) Crystals

The results of experimental studies on eadiation damage of CsI(Tl) crystal were reported.There are radiation damage effects on CsI(Tl) crystal.Experimental studies on recovery of damaged CsI(Tl) crystals were made.It seems that after heating at 200℃ for 4 hours,the damaged crystals could be recovered completely.     

Damage production and annealing in ion-irradiated FCC metals

Abstract

Damage production, radiation annealing and stage I recovery in some FCC metals irradiated with ～ 1 MeV and ～ 100 MeV ions near 10 K are studied using electrical resistivity measurements. For ～ 1 MeV light and heavy ion irradiations, the fraction of stage I recovery and the damage efficiency decrease with the PKA median energy. For ～ 100 MeV heavy ion irradiations, an anomalous reduction of stage I recovery and a large cross-section for subthreshold recombination are found in Ni, and an enhancement of the damage efficiency is found in Cu; they are interpreted as due to the electron excitation by irradiating ions and the subsequent energy transfer from excited electrons to lattice atoms. Simultaneous differential equations describing the production and radiation annealing of two or more types of defects are solved, where the respective defect concentration is expressed as a function of fluence.     

聚合物光纤辐照特性的实验研究

分析了聚合物受辐照后发生物理化学变化的机理,实验研究了聚苯乙烯（PS）、聚碳酸脂（PC）、聚甲级丙烯酸甲脂（PMMA）三种聚合物光纤在不同辐照剂量下光传输性能的变化以及其恢复特性.在各种辐照剂量下,光透过率有不同程度的下降,经过一段时间后也有不同程度的回复,并且恢复主要发生在停止辐照后的较短时间内.在102 Gy以下,辐照造成的光损伤经过一段时间基本可以恢复,在更高剂量的辐照下(超过5*10³ Gy),辐照对光纤造成了永久损伤,经过很长时间也只能恢复一部分.实验结果表明,PS光纤的抗辐照特性最好,PC光纤优于PMMA光纤.     

Fe离子注入ZnO生成超顺磁纳米颗粒

过渡族元素掺杂ZnO生成稀磁半导体, 成为近期国际材料科学研究的热点. 在本文中, 研究Fe离子注入ZnO单晶的结构和磁性变化, 目标是建立磁性和结构的对应关系, 澄清铁磁性的来源. 采用卢瑟福背散射/沟道技术 (RBS/Channelling)、同步辐射X射线衍射 (SR-XRD)和超导量子干涉仪 (SQUID), 研究注入温度和退火对样品的晶格损伤、结构及磁性的影响. 研究表明: 样品注入区损伤随注入温度升高而降低; 低温253 K注入样品中, SR-XRD未检测到新相, Fe离子分布于Zn位, ZnO (0002) 峰右侧肩峰可能属于Zn_1-xFe_xO, 5 K下测试样品不具有铁磁性; 623 K注入和823 K真空退火 (253 K注入) 样品中形成α和γ相金属Fe, 5 K下样品具有明显的剩磁和矫顽力, 零场冷却和场冷却 (ZFC/FC) 曲线和300 K下的磁滞回线显示纳米Fe颗粒具有超顺磁性. Fe离子注入ZnO的磁性源于第二相α-Fe和γ-Fe. 关键词： 离子注入 ZnO 同步辐射X射线衍射 超顺磁性     

In situ investigation of synchrotron radiation damage effect of ancient paintings by time-resolved ED-XAS and IR combined techniques

Advanced synchrotron radiation light is a powerful tool for archaeometry research. However, its applications to precious cultural relics, especially for color painting, have been hindered to some degree due to potential X-ray radiation damage. Compared to inorganic mineral pigments, organic binders in the painting are easier to be damaged by synchrotron radiation X-ray beam. The radiation damage effect of two typical painting samples, pure rabbit skin glue and the mixed sample of rabbit skin glue and zinc white, has been investigated by in situ time-resolved ED-XAS and IR combined techniques. The results show that the radiation damage effect of pure rabbit skin glue is more serious at low X-ray energy (7775 eV). The radiation damage effect of the mixed sample increases significantly due to more X-ray absorption by inorganic pigments. Furthermore, the radiation damage is more serious at the energy near Zn K-edge and is somewhat slight at higher energy (13,054 eV). These damages are more obvious from the point of view of protein secondary structures. The irradiation damage effects increase more rapidly at the beginning and are not linear with the irradiating time. The results indicate that synchrotron radiation damage can be reduced effectively by using X-ray energy far away from the X-ray absorption edge of the major element in the pigments during XRF, XRD and CT experiments, or by using time-resolved techniques such as QXAFS and ED-XAS during XAFS experiments.     

UV-B诱导的大豆愈伤组织超弱光子辐射的动力学分析

为了研究细胞超弱光子辐射的动力学特征及其所揭示的生物学意义,用20 μW/cm2UV-B辐射大豆愈伤组织2 h,测定停止辐射后4 d内大豆愈伤组织在LED光诱导下的延迟发光.通过建立延迟发光动力学方程和数学拟合得到了大豆愈伤组织超弱光子辐射中的延迟发光积分强度、初始光子数、衰减参数和自发发光,讨论了这些发光动力学参数的生物学意义.研究结果表明,在停止UV-B辐射后的4 d内,大豆愈伤组织的光诱导延迟发光服从双曲线弛豫.动力学分析发现,延迟发光积分强度和初始光子数随处理后时间的进行呈现波动变化,停止UV-B辐射后,自发发光和丙二醛（MDA）含量均呈现升高的趋势,在辐射后2 d附近达到峰值,此后同步下降.用延迟发光积分强度和自发发光的比值定义细胞的状态参量Q和序参量R,发现UV-B辐射后大豆愈伤组织细胞Q值或R值的变化反映了UV-B辐射对大豆愈伤组织细胞的损伤以及细胞的恢复过程.     

Simulation of radiation damage in materials under high fluence ion bombardment

The results of analytical estimations and computer simulation of a radiation damage level dpa are presented and discussed taking into account the material sputtering under ion bombardment. It is shown that the calculations of a stationary level of radiation damage are necessary for the interpretation of regularities of a radiation damage in materials under high fluence ion bombardment.     

MOS器件辐照过程和辐照后效应模拟

模拟MOS器件脉冲电离辐射响应和长时间恢复效应.假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理.在整个退火恢复期,采用卷积模型并考虑了栅偏置压的效应.模拟结果表明:退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率.     

The radiation induced color centers of the LaBr3:Ce crystal

This paper presents study of the gamma-rays induced radiation damage in the LaBr₃:Ce crystal. The light output and transmittance are measured before and after γ-rays irradiations with an integrated dose up to 10⁶ rad for two LaBr₃:Ce samples. After γ-rays irradiation, LaBr₃:Ce crystal shows very slow recovery process or has no recover under room temperature, indicating that the radiation damage in LaBr₃:Ce crystal is not dose date dependent. Meanwhile, it's found that the radiation induced color centers are respectively peaked at the wavelength of 448 nm, 512 nm and 590 nm. Those color centers should be ascribed to the V_k, V_F and F center respectively.