808 nm大功率半导体激光器腔面膜的制备

采用等离子体辅助电子束蒸发方法在808 nm大功率量子阱半导体激光器腔面设计镀制了HfO₂/SiO₂系前后腔面膜. 用直接测量法测量并比较了各种常用膜系的相对损伤阈值. 增透膜的反射率为12.2％,高反膜的反射率为97.9％. 对于100 μm条宽、1000 μm腔长的条形结构通过器件测量结果是出光功率提高79％、外微分量子效率提高80％、功率效率由没镀膜之前的22.2％提高到镀膜之后的39.8％.     

Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser

In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ～1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiO_x dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed.     

Stress, absorptance and laser-induced damage threshold properties of 355-nm HR coatings

A number of 355-nm Al₂O₃/MgF₂ high-reflectance (HR) coatings were prepared by electron-beam evaporation. The influences of the number of coating layers and deposition temperature on the 355-nm Al₂O₃/MgF₂ HR coatings were investigated. The stress was measured by viewing the substrate deformation before and after coating deposition using an optical interferometer. The laser-induced damage threshold (LIDT) of the samples was measured by a 355-nm Nd:YAG laser with a pulse width of 8 ns. Transmittance and reflectance of the samples were measured by a Lambda 900 spectrometer. It was found that absorptance was the main reason to result in a low LIDT of 355-nm Al₂O₃/MgF₂ HR coatings. The stress in Al₂O₃/MgF₂ HR coatings played an unimportant role in the LIDT, although MgF₂ is known to have high tensile stress.     

980nm半导体激光器腔面膜钝化新技术

研究了不同腔面钝化方法对980 nm渐变折射率波导结构InGaAs/AlGaAs半导体激光器输出激光功率的影响.将980 nm半导体激光器管芯前后腔面不蒸镀钝化膜与蒸镀Si钝化膜和蒸镀ZnSe钝化膜的方法进行了对比.结果表明,蒸镀ZnSe钝化膜比蒸镀Si钝化膜的半导体激光器输出光功率提高了11％,比不蒸镀钝化膜的半导体...     

Intra-cavity spectroscopy with diode lasers

A multi-mode diode laser with an external cavity is studied experimentally and theoretically for its application to intra-cavity spectroscopy. One facet of a typical Ga_0.89Al_0.11As laser diode was antireflection-coated by deposition of HfO₂ such that 10^–3 residual reflectivity was left over. This diode was placed in an external optical cavity. The emission spectrum of this diode laser is highly sensitive to any frequency-dependent loss in the cavity, and the detectivity of such a loss grows with the pump rate. Even close to threshold, the absorption at 780 nm of Rb atoms with a density of 5×10¹⁰ cm^–3 has been detected. An adequate model for diode lasers based on rate equations and including frequency-dependent gain saturation is developed and applied to the calculations of output spectra. The sensitivity of these spectra to intra-cavity absorption is determined by the overall cavity loss — which is rather high — and the fraction of spontaneous emission in the total emission, in contrast with dye lasers where it is limited by nonlinear mode coupling. Various criteria for the sensitivity are suggested. The smallest detectable absorption with a perfectly antireflection-coated laser is 10^–6 cm^–1. Improvement of the characteristics of the laser diode would increase the sensitivity.     

Chirp reduction in three-cavity semiconductor laser diodes

The oscillation frequency shift ratio (OFSR) of a three-cavity coupled laser diode, which is caused by refractive index changes due to current modulation and temperature variation, has been investigated. It is found that the OFSR is significantly reduced by using a laser with an AR coated facet and a high external-mirror reflectivity, in addition to large external cavity lengths. Also, compared with an external cavity laser, the three-cavity laser has a smaller OFSR provided that the external cavities' reflectivities r₀ and r₃, are not identical (that is, r₃ > r₀). The analysis indicates that the structural parameters affect the OFSR of the three-cavity laser, which was shown to have a high longitudinal mode discrimination¹.     

基于等离子体增强化学气相沉积技术的光电子器件多层抗反膜的设计和制作

针对光电子器件端面抗反镀膜的要求,研究了基于等离子体增强化学气相沉积(PECVD)技术的多层抗反膜的设计和制作.首先,对影响SiN_x折射率的因素进行了实验研究,确定了具有大折射率差的SiO₂/SiN_x材料的PECVD沉积条件.根据理论计算分析,设计了四层SiO₂/SiN_x抗反膜结构,能够在70 nm的波长范围内实现低于10^-4的反射率     

Micro- and nanocomposite Ti-Al-N/Ni-Cr-B-Si-Fe-based protective coatings: Structure and properties

A new type of nanocomposite Ti-Al-N/Ni-Cr-B-Si-Fe-based coatings 70–90 μm thick produced by combined magnetron sputtering and a plasma detonation technology is created and studied. Phases Ti₃AlN + Ti₃Al₂N₂ and the phases caused by the interaction of plasma with a thick Al₃Ti + Ni₃Ti coating are detected in the coatings. The TiAlN phase has a grain size of 18–24 nm, and other phases has a grain size of 35–90 nm. The elastic modulus of the Ti-Al-N coating is E = 342 ± 1 GPa and its average hardness is H = 20.8 ± 1.8 GPa. The corrosion rate of this coating is very low, 4.8 μg/year, which is about three orders of magnitude lower than that of stainless steel (substrate). Wear tests performed according to the cylinder-surface scheme demonstrate high wear resistance and high adhesion between the thick and thin coatings.     

HfO_2/SiO_2高反膜、增透膜及偏振膜的1064nm激光损伤特性

高反膜、增透膜和偏振膜是Nd∶YAG激光器中的关键薄膜元件 ,其抗激光损伤能力直接影响到激光器的输出能量和功率。由于优异的物理化学性能 ,高功率Nd∶YAG激光器的光学薄膜一般采用HfO2 /SiO2 膜料组合镀制 ,因而用此膜料镀制的光学薄膜的激光损伤特性是薄膜工作者重点关注的问题。对光学中心APS15 0 4镀膜机镀制的HfO2 /SiO2 高反膜、增透膜和偏振膜等开展了 10 64nm的激光损伤实验研究 ,用 2 0 0倍的Normaski显微镜详细分析了高反 ,增透和偏振膜的激光损伤图貌 ,发现对于脉宽为 10ns波长的 10 64nm的激光而言 ,高反膜基本表现为孔洞和等离子体烧蚀疤痕 ,孔洞是由薄膜中的节瘤 (nodular)缺陷的激光损伤引起的 ,损伤的能流密度较低 ,为薄膜的零损伤阈值密度。疤痕为薄膜的激光等离子体烧伤引起的 ,尺寸大小与激光能量密度成近似正比。增透膜一般为双面镀 ,分前后膜堆两种情况 ,前膜堆表现为孔洞和疤痕 ,与高反膜相似 ;后膜堆为孔洞型的小圆麻点聚积 ,麻点处的薄膜完全剥落 ,没有疤痕等烧伤痕迹 ,是激光在基片之间形成的驻波电场损毁 ,损伤阈值比前膜堆低 1 5倍 ,决定着增透膜的损伤阈值。偏振膜的低能量密度损伤与增透膜后膜堆相似 ,表现为孔洞型小麻点聚积 ,损伤处未见疤痕等烧蚀痕迹。对薄膜小尺度损?     

切削用量对铝靶表面质量的影响

采用单点金刚石切削技术，完成了对ICF实验用铝靶的切削加工，重点研究了切削用量对加工表面质量的影响。实验结果表明:采用较小的进给速度，较大的主轴转速能够获得较低的表面粗糙度，切削深度对表面质量影响较小。通过Form Talysurf 表面轮廓仪测量，结果表明表面粗糙度小于50 nm。     

GaAlAs快速边发光管发射端面沉积Al2O3抗反射层的研究

本文报导了在快速DH GsAs-GaAlAs边发光管发射端面上溅射沉积Al2O3抗反射层的研究,涂层厚度与输出光功率的提高密切相关,层厚接近λ/4值时,在200mA下光功率输出的提高达~80%.     

微弧等离子喷涂碳纳米管/纳米Al2O3-TiO2复合涂层的吸波性能研究

将碳纳米管与纳米Al₂O₃-TiO₂陶瓷粉末超声共混制备了碳纳米管/纳米Al₂O₃-TiO₂复合粉末,测试了复合粉末在2—18GHz波段的电磁参数.研究表明：随着碳纳米管质量分数的增加,碳纳米管/纳米Al₂O₃-TiO₂复合粉末的复介电常数和损耗角不断增大.当碳纳米管质量分数和厚度增加时,复合粉末对电磁波的反射率峰值先增加后减小,而谐振频率不断向低频移动.采用微弧等离子喷涂制备了7wt%碳纳米管/纳米Al₂O₃-TiO₂复合吸波涂层,当厚度为1.5mm时,涂层最小反射率为-24.0dB,当厚度为2.0mm时,涂层小于-10dB的频带宽为3.60GHz,当温度为500℃高温时,1.0mm厚的涂层最小高温反射率为-12.2dB,小于-10dB频带宽为2.0GHz.复合涂层的实际厚度D与理论厚度d呈线关系：d=0.898D+0.515. 关键词： 等离子喷涂 碳纳米管 2O₃-TiO₂')" href="#">纳米Al₂O₃-TiO₂ 吸波性能     

Study on the feasibility of double stack high reflector coating at 355 nm

The feasibility of the idea of double stack HR coating was discussed in this paper both in theory and experiment. The theoretical simulation was made by employing optical coating design software. The analysis results showed that the design of double stack HR coating was feasible, which made the HR coating have ascendancy not only at reflectance but also at laser damage resistance. Then, the LaF₃/MgF₂ HR coating, the HfO₂/SiO₂ HR coating and the double stack HR coating were prepared for comparison, respectively. Transmittance spectra, surface morphologies and damage morphologies of these coatings were measured. Measurement of laser-induced damage threshold (LIDT) of S polarized light of the samples was performed at 355 nm, 45° incidence. The measurement results showed that the LIDT value of the LaF₃/MgF₂ HR coating with 30 layers was very high, but the reflectance was low. When the layer number was increased up to 36, lots of cracks appeared on the surface of the LaF₃/MgF₂ HR coating, with the LIDT badly declining. It was thought that the residual stress resulted in the cracks and the decline of the LIDT. The spectra measurement showed the double stack HR coatings could provide higher reflectance and wider reflection band than LaF₃/MgF₂ HR coating with less layer pairs. Any crack was also not found on the surface of the double stack coatings. Meanwhile, the double stack HR coatings possessed greater laser damage resistances than the HfO₂/SiO₂ HR coating. The damage morphologies showed that the damage of the double stack coating was even milder than that of the HfO₂/SiO₂ coating. Therefore, the double stack design was effective to gain high reflectance and great UV laser radiation resistance simultaneously.     

Theoretical analysis on phase-locking properties of a laser diode array facing an external cavity

External coupling model has been used to describe the output field of a laser diode array (LDA) phase-locked with an external cavity. The analytical solution for the coupling matrix equation of the phase-locked system has been obtained. The dependencies of the threshold gain, g_j of the system mode on the residue reflection of the front facet, r_f and round trip external cavity lengths, L have been discussed. The working lengths of the external cavity for stably phase-locking the LDA of different residual reflectivities have been calculated.     

Tunable frequency-controlled laser source in the near ultraviolet based on doubling of a semiconductor diode laser

Continuously tunable ultraviolet laser radiation at 397 nm was generated by doubling the output of a semiconductor diode laser. The fundamental radiation was provided by a 150 mW AlGaAs laser diode injected by a low-power AlGaAs laser diode which was frequency stabilized by optical feedback using a new scheme of a miniature external cavity. Second-harmonic generation was produced in a lithium-triborate crystal placed in a compact enhancement cavity. The fundamental radiation was used for sub-Doppler spectroscopy of the Ar I 4s ³ P ⁰ ₀–4p ¹ P ₁ transition at 795 nm; the second-harmonic radiation was used for spectroscopy of the Ca II 4² S _1/2–4² P _1/2 transition at 397 nm.     

The thermal properties of a single-heterostructure laser diode supplied with short current pulses

The analysis of the heat spreading in the single-heterostructure GaAs-Ga₁-x Al _x As laser diode supplied with short current pulses (in the case, however, when the adiabatic approximation is no longer valid) at room temperature is presented in this paper. Relations are derived, describing the time-dependent temperature rise within the volume of the laser diode. The calculations are carried out for a typical SH laser diode. It turns out that in the duration of the short current pulses (t _I=200 ns,j=1.5 × 10⁴A cm^–2) the increase in junction temperature of the typical SH laser diode amounts to about 6.1 K. This increase leads to an increase of about 9% in the threshold current, to a decrease of about 18% in the laser radiation intensity, and to a shift of the spontaneous radiation band and of the stimulated radiation modes of about 1.9 nm and 0.22 nm, respectively, during each current pulse.     

Measurements and inverse calculations of spectral radiation intensities of a turbulent ethylene/air jet flame

Fast (6250 Hz) line-of-sight measurements of infrared spectral radiation intensities (I_λ) from a luminous flame and a new deconvolution technique for the estimate of local scalar properties using inverse radiation calculations are reported. Time series data of I_λ for one diametric and nine chord-like radiation paths in a representative horizontal plane were measured. Statistical properties of I_λ, including mean, root mean square (rms), probability density function, autocorrelation coefficient, and power spectral density, were obtained from the time series data. The measured statistical properties of I_λ at two representative wavelengths, which are dominated by carbon dioxide (CO₂) and soot radiation, respectively, are reported. The autocorrelation coefficient data show large negative loops with repeatable zero crossings at 20 ms and minimum values as low as −0.2 at 30–40 ms. Radial distributions of mean and rms CO₂ mole fractions and temperatures were estimated using inverse calculations of mean I_λ at two different wavelengths dominated by CO₂ radiation in conjunction with the relationship of these quantities to mixture fractions. Soot volume fraction distributions were also estimated using inverse calculations of mean I_λ at a wavelength dominated by continuum soot radiation. The estimated local mixture fraction distributions were in reasonably good agreement with sampling data from similar flames. The calculated mean I_λ from 1.4 to 4.8 μm other than those used in the inverse calculations matched the experimental data well. The present method provides non-intrusive measurements of major gas species and temperature statistics in turbulent soot containing flames not accessible to other optical diagnostics.     

Modeling and analysis of birefringence in magneto-optical thin film made by SiO2/ZrO2 doped with ferrite of cobalt

We report the device characteristics of the metal–dielectric high-reflectivity (HR) coated 1.55 μm laterally coupled distributed feedback (DFB) laser with metal surface gratings by using holographic lithography. The HR coating films are composed of Au/Ti/SiO₂. It provides a variety of advantages compared to the uncoated DFB laser on the same processed wafer while there is no degradation on current–voltage characteristics. For 3 μm wide and 300 μm long HR coated DFB laser, it exhibits a maximum output power of ∼17 mW and a threshold current of 14.2 mA at 20°C under continuous-wave mode. It is clear that the threshold current and slope efficiency are improved by 36% and 96%, respectively, due to the reduction of mirror loss. The metal–dielectric HR coating on one facet of DFB laser is found to have significantly increased characteristic temperature (i.e., T ₀∼88 K). Furthermore, the stable single-mode operation with an increased single-mode suppression ratio was achieved.     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

HR-coated facet effect on the spectral characteristics of a three-section DBR tunable laser

High-relfection (HR)-coated facet effects on the spectral characteristics of a three-section distributed Bragg reflector (DBR) tunable laser are investigated theoretically, in which the output power emits to the DBR section. It is found that the output power to the DBR sectionP _DBR compared to the cleaved facet output powerP ₀ is nearly constant to some degree with increasing tuning current. Owing to the high-Q resonator, the HR-coated DBR laser showed a decrease in spectral linewidth. However, there is still linewidth broadening of the HR-coated DBR laser even though the rate of increase is smaller than that of the cleaved-facet DBR laser. In the case of output power emission to the DBR section, it is thought that the HR-coated effect can overcome the decrease in output power under frequency tuning, which is one of the most important drawbacks of DBR laser performance.