硅纳米孔柱阵列的结构和光学特性研究

采用水热腐蚀技术在单晶硅衬底上制备出一种新的硅微米／纳米结构复合体系——硅纳米孔柱阵列(Si-NPA)，并对其表面形貌、结构及光学特性进行研究.Si-NPA的结构复合性体现为 在微米和纳米两个尺度上形成了三个分明的结构层次，即微米尺度的硅柱阵列结构、硅柱上 的纳米多孔结构以及组成孔壁的硅纳米晶粒.积分光反射谱和荧光光谱测试表明，Si-NPA具 有良好的光吸收和光致发光特性.依据Si－NPA积分反射谱的实验数据，采用Kramers-Kronig 变换关系计算得到了Si-NPA的复折射率和复介电函数、吸收系数等光学常数，并由此讨论了 Si-NPA相对于单晶硅的光学特性发生显著变化的原因.最后，通过分析Si-NPA的光吸收系数 与入射光子能量之间的关系，揭示出Si-NPA具有直接带隙半导体的电子结构特征，而且理论 计算得到的Si-NPA的带隙能与其光致发光谱的峰位能很好符合. 关键词： 硅纳米孔柱阵列 光学特性 电子结构 水热腐蚀     

氧化锌/硅纳米孔柱阵列的结构和光致发光特性研究

以硅纳米孔柱阵列(Si-NPA)为衬底、用化学气相沉积法制备了具有规则阵列结构特征的ZnO/Si-NPA纳米复合体系，并对其结构和光致发光性质进行了表征. 实验结果显示，组成ZnO/Si-NPA表面阵列的每个柱子均呈现层壳结构. 不同于衬底Si-NPA的红光和蓝光发射，ZnO/Si-NPA在紫外光区和蓝绿光区呈现出两个强的宽发光峰. 分析表明，紫外光发射应归因于ZnO晶体的带边激子跃迁；而蓝绿光发射则来自于ZnO晶体本征缺陷所形成的两类深能级复合中心上载流子的辐射跃迁.     

碳纳米管/硅纳米孔柱阵列的场发射性能

"通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上．采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析．结果发现：所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构．能谱分析表明碳纳米管仅含有碳元素．对样品进行场发射性能测试表明该结构开启电压为1.3 MV/m,当外加电压为4.26 MV/m,发射电流为5 mA/cm2．由FN公式计算相应的场增强因子约为1.1￡104．碳纳米管/硅纳米孔柱阵列好的场发射性能被归     

硅纳米孔柱阵列及其四氧化三铁复合薄膜的湿敏电容特性研究

报道了硅纳米孔柱阵列（Si-NPA），Fe₃O₄复合的Si-NPA（Fe ₃O₄/Si-NPA）两种薄 膜材料的制备方法并对其形貌和结构进行了表征，研究了其电容湿度传感特性.结果表明，S i-NPA，Fe₃O₄/Si-NPA均为微米/纳米结构复合体系.当环境相对湿 度从11％上升到95％ 时，采用100 Hz的信号频率进行测试，以Si-NPA和Fe₃O₄/Si-NPA 为电介质材料制成的湿 敏元件的电容增加值分别为起始值的1500％和5500％；采用1000 Hz的信号频率测试时，则 分别为起始值的800％和12000％，显示出两种材料较高的湿度灵敏性和较强的绝对电容输出 信号强度.同时，在升湿和降湿过程中，Si-NPA，Fe₃O₄/Si-NPA都 具有较快的响应速度 ，其响应时间分别为15 s，5 s和20 s，15 s.文章结合材料的形貌和结构特性对其物理机理 进行了分析.上述结果表明，Si-NPA无论是直接作为湿度薄膜传感材料还是作为复合薄膜湿 度传感材料的衬底都具有很好的前景. 关键词： 硅纳米孔柱阵列 3O₄')" href="#">Fe₃O₄ 湿度电容传感特性     

银/硅纳米孔柱阵列活性基底的SERS效应研究

以硅纳米孔柱阵列(Si-NPA)为衬底,采用浸渍法制备出一种具有规则表面形貌特征的银/硅纳米孔柱阵列(Ag/Si-NPA),并以R6G为探测目标材料,对其表面增强拉曼(SERS)效应进行了研究。结果表明,对于R6G浓度低至10-15M,Ag/Si-NPA均能表现出清晰的特征SERS峰。随着浓度的降低,R6G的荧光淬灭,所测拉曼光谱的基线降低,但特征峰峰位基本保持不变。在低浓度10-15M时得到的SERS光谱,理论上证明为单分子光谱。此外,Ag/Si-NPA活性基底具有较好的稳定性,在长达28天的自然老化过程中,Ag/Si-NPA能够保持对R6G较高的探测水平,光谱具有较好的信噪比和分辨率。Ag/Si-NPA是一种理想的SERS活性基底。     

超亲水性SiO2-TiO2纳米颗粒阵列结构的制备与性能研究

用分子自组装的方法在玻璃衬底上分别制备了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构. 其中,SiO₂ 纳米颗粒层用旋涂法制备,得到密排阵列结构,而TiO₂纳米颗粒层则用浸渍提拉法制备. 文章分析了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构的理论粗糙度,并通过扫描电子显微镜研究了它们的微观结构,用接触角 关键词： 自清洁 表面粗糙度 光催化 分子自组装     

有序金纳米颗粒阵列的制备及光吸收特性研究

采用纳米球刻蚀技术中漂移法在玻璃基片上制备较大 面积不同直径的聚苯乙烯小球掩模板, 采用磁控溅射技术在掩模板上沉积不同厚度的金薄膜, 去除聚苯乙烯小球后, 通过扫描电子显微镜观察到周期排列的三角状金纳米颗粒点阵. 通过紫外-可见分光光度计测试所制备样品的光吸收特性, 发现表面等离子体共振峰随粒径增大发生红移, 随金纳米颗粒高度增加发生蓝移. 基于Mie理论, 利用Matlab软件编程对不同粒径的金阵列光吸收特性进行理论模拟, 并与实验结果进行对比. 关键词： 纳米球刻蚀 金纳米颗粒阵列 表面等离子体共振     

激光晶化形成纳米硅材料的场电子发射性质研究

利用KrF准分子激光退火超薄非晶硅膜,并结合热退火技术制备了单层纳米硅薄膜并研究了薄膜的场电子发射性质.在晶化形成的纳米硅薄膜中可以观测到稳定的场电子发射现象,其开启电场从原始淀积的非晶硅薄膜的17V/μm降低到8.5V/μm,而场发射电流密度可以达到0.1mA/cm².激光晶化后形成的纳米硅材料的场电子发射特性的改善可以从薄膜表面形貌的改变以及高密度纳米硅的形成所导致的内部电场增强作用来解释. 关键词： 纳米硅 场发射 激光晶化     

绝缘衬底上高密度均匀纳米硅量子点的形成与表面形貌

利用等离子体增强化学气相淀积技术，在绝缘氮化硅(SiNx)衬底上制备超薄非晶硅(aSi：H)薄膜，通过超短脉冲激光辐照与准静态常规热退火技术处理，制备出高密度、均匀纳米硅(ncSi)量子点.使用原子力显微镜对处理前后样品的表面形貌进行了研究，发现激光辐照能量密度增加的同时，所形成的ncSi尺寸也随之增加.在合适的能量密度范围内，可以得到面密度大于10.11cm^2、尺寸分布标准偏差小于20％的10 nm ncSi量子点薄膜，表明所制备的ncSi量子点具有较好的均匀性及较高的面密度.同时，对ncS i量子点 关键词： 纳米硅 激光诱导 尺寸分布     

两步法制备超疏水性ZnO纳米棒薄膜

采用两步法制备了超疏水性ZnO纳米棒薄膜,在用磁控溅射在普通玻璃衬底上生长一层ZnO籽晶层基础上,利用液相法制备了空间取向高度一致的ZnO纳米棒阵列,经修饰后由亲水性转变为超疏水性.用扫描电子显微镜观察了纳米棒的表面结构,用接触角测量仪测出水滴在ZnO纳米棒薄膜表面的接触角为151°±05°,滚动角为7°.用Cassie模型对ZnO纳米棒薄膜的超疏水性进行了验证. 关键词： ZnO纳米棒 超疏水 两步法     

Improved surface-enhanced Raman scattering of patterned gold nanoparticles deposited on silicon nanoporous pillar arrays

Large-area silicon nanoporous pillar arrays (Si-NPA) uniformly coated with gold nanoparticles was synthesized, and surface-enhanced Raman scattering of rhodamine 6G adsorbed on these gold nanoparticles were studied and compared. It's found that Au/Si-NPA substrate has a significantly high Raman signal sensitivity and good homogeneity. These are attributed to gold nanoparticles with narrow particle-size distribution uniformly coated on the surface and to the enlarged specific surface area for adsorption of target molecules brought by the porous silicon pillars.     

Microstructure and blue photoluminescence enhancement of silicon nanoporous pillar array embedded in ferroelectric barium strontium titanate

A silicon nanoporous pillar array (Si-NPA) with micrometer/nanometer hierarchical structure was fabricated by hydrothermal etching, followed by spin-coating barium strontium titanate (BST) on Si-NPA substrate. The photoluminescence (PL) spectra of the Si-NPA and BST/Si-NPA thin film were investigated. The emission band of freshly prepared Si-NPA located at 630 nm, and a blueshift at 425 nm as well as degradation in intensity after annealing at 600 °C for 1 h was observed, which might be explained by a quantum confinement effect model. BST ferroelectric material provided a static-electric field and induced the excited carriers in Si-NPA to migrate toward the opposite direction and recombine in an interfacial oxide layer. Therefore, BST enhanced blue emission of Si-NPA as well as passivated Si-NPA.     

Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique silicon substrate with a hierarchical structure, silicon nanoporous pillar array (Si-NPA), by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of $\sim$10\,\mu$m. The film resistivity of ZnO/Si-NPA is measured to be $\sim$8.9\Omega\cdot$\,cm by the standard four probe method. The lengthwise $I$-$V$ curve of ZnO/Si-NPA heterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.     

Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface

In this work, anodic porous alumina thin films with pores in the nanometer range are grown on silicon by electrochemistry and are used as masking material for the nanopatterning of the silicon substrate. The pore diameter and density are controlled by the electrochemical process. Through the pores of the alumina film chemical oxidation of the silicon substrate is performed, leading to the formation of regular arrays of well-separated stoichiometric silicon dioxide nanodots on silicon, with a density following the alumina pores density and a diameter adjustable by adjusting the chemical oxidation time. The alumina film is dissolved chemically after the SiO₂ nanodots growth, revealing the arrays of silicon dioxide dots on silicon. In a next step, the nanodots are also removed, leaving a nanopatterned bare silicon surface with regular arrays of nanopits at the footprint of each nanodot. This silicon surface structuring finds interesting applications in nanoelectronics. One such application is in silicon nanocrystals memories, where the structuring of the oxidized silicon surface leads to the growth of discrete silicon nanocrystals of uniform size. In this work, we examine the electrical quality of the Si/SiO₂ interface of a nanostructured oxidized silicon surface fabricated as above and we find that it is appropriate for electronic applications (an interface trap density below 1–3×10¹⁰ eV⁻¹ cm⁻² is obtained, indicative of the high quality of the thermal silicon oxide).     

Field emission measured from nanostructured germanium and silicon thin films

We have prepared nanostructured thin films of germanium and silicon. The films were grown by an ion beam sputtering technique followed by a rapid annealing step using an electron beam annealer. The annealing temperature is a comparatively low 500 °C, resulting in well defined nano-islands on the film surface. Electron field emission has been measured from the surfaces under high vacuum. The threshold electric field value for significant current flow was measured as 2.5 V μm⁻¹ for a silicon thin film which is comparable to other silicon technologies. A value of 0.5 V μm⁻¹ for a germanium thin film represents an order of magnitude improvement for related germanium nanostructured systems.     

金纳米颗粒阵列基底的化学置换制备及其表面增强拉曼散射特性研究

表面增强拉曼(SERS)作为一种分析手段,具有高灵敏度、高选择性、高重复性、非破坏性等优点,在过去的几十年中,被广泛应用在成分检测、环境科学、生物医药及传感器等领域。其中以金、银等贵金属纳米颗粒薄膜在表面增强拉曼(SERS)活性基底方面得到了更为广泛的应用。SERS技术一个关键的因素是如何制设计并备具有大面积、高增强能力及高重复性、可循环使用的SERS基底。通常,贵金属纳米颗粒规则阵列结构的单元颗粒电磁增强特性及其颗粒间的电磁耦合增强特性的综合作用可大力提升SERS基底的探测性能。然而,利用传统微纳米加工方法如光刻、电子束光刻等方法制备得到的贵金属纳米阵列结构的表面粗糙度不够理想。结合光刻与化学置换方法制备金纳米颗粒四方点阵列孔洞结构,并研究其作为SERS基底的电磁增强特性。具体研究利用光刻法在硅衬底上制备了规则排列的四方点阵列孔洞结构,用磁控溅射在其表面镀上金属铁膜;接着在衬底上旋涂浓度为1.893 8 mol·L-1的氯金酸液膜,在孔洞内铁和氯金酸发生置换反应,进而孔洞生成金纳米颗粒,最终得到金纳米颗粒四方点阵SERS活性基底。采用罗丹明6G(R6G)分子作为探测分子测试不同金纳米颗粒阵列结构基底的SERS谱。实验结果表明,随着化学置换反应时间的延长,金纳米颗粒排列更加紧凑有序,SERS谱增强性能更好。     

SERS activity of Au nanoparticles coated on an array of carbon nanotube nested into silicon nanoporous pillar

A novel composite structure, Au nanoparticles coated on a nest-shaped array of carbon nanotube nested into a silicon nanoporous pillar array (Au/NACNT/Si-NPA), was fabricated for surface-enhanced Raman scattering (SERS). The morphology of the Au/NACNT/Si-NPA composite structure was characterized with the aid of scanning electron microscopy, X-ray diffraction instrumentation and Transmission electron microscopy. Compared with SERS of rhodamine 6G (R6G) adsorbed on SERS-active Au substrate reported, the SERS signals of R6G adsorbed on these gold nanoparticles were obviously improved. This was attributed to the enlarged specific surface area for adsorption of target molecules brought by the nest-shaped CNTs structure.