短脉冲激光刻蚀加工铜材料的机制

 利用数值模拟方法，研究波长1 064 nm、脉冲宽度介于1~20 ps的激光在刻蚀铜靶时，单次脉冲作用下非平衡场刻蚀和热平衡刻蚀两种机制的竞争过程。结果表明：随着脉冲宽度的增加，刻蚀过程由非平衡电荷分离场刻蚀占主导地位转变为热平衡刻蚀起主要作用，且脉冲宽度和激光峰值功率密度增大到一定程度后，各种电子加速机制在不同时刻开始突显，电子能量分布出现多峰结构。在能量密度为15 J/cm2的激光作用下，1和5 ps脉宽对应的非平衡场刻蚀深度分别为110和101 nm，10和20 ps脉宽分别为25和18 nm。     

皮秒级时间分辨超快高能脉冲激光光谱

介绍了一种利用光电摄谱法和条纹管相结合测量ps级时间分辨超快高能脉冲激光光谱的方法。论述了条纹相机工作原理和平面衍射光栅的分光原理,分析指出利用介绍的装置,可以实现波长300 nm ～1 600 nm、脉宽＞2 ps超快高能脉冲激光的光谱测量。采用1 054 nm超快高能脉冲激光器,实验得到了条纹像,对条纹像进行数据处理后得到测量光谱曲线,通过能量标定后,得到了超快高能脉冲激光器实际光谱曲线,验证了ps级时间分辨超快高能脉冲激光光谱方法。讨论了系统中耦合透镜组对光谱测量和光纤色散角对条纹图像的影响,论述了ps级时间分辨超快高能脉冲激光光谱的作用。随着条纹管制造技术的飞速发展,该方法可用于fs级激光光谱的测量。     

La0.67Ca0.33MnO3薄膜皮秒光电效应

在1064 nm波长脉冲激光（脉宽25 ps）的照射下，钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应，对激光脉冲显示ps量级的响应时间，上升沿响应时间300 ps，半高宽700 ps，同时，对激光能量的响应灵敏度为500 mV/mJ。     

基于MOPA结构与高能量种子源的高功率皮秒掺铥光纤放大器（英文）

以单脉冲能量更高的孤子激光器为种子源,通过主振荡放大技术,获得了2μm波段的高功率、皮秒脉冲激光器.该种子源是一个被动锁模的光纤激光器,通过优化、管理激光器谐振腔内的色散,获得了脉冲宽度为50ps、重复频率为55.6 MHz、谱宽约为21nm的高能量孤子脉冲输出.利用单模光纤在2μm波段的负啁啾色散特性,在进行功率放大之前将作为种子源的激光脉冲宽度展宽至600ps.最后,经过两级放大之后,获得平均功率约23 W、脉宽为660ps的激光输出.利用光栅对,对放大后的激光脉冲进行压缩,经测试压缩后的脉冲宽度约为0.9ps.     

Ce~(3+)∶LiCaAlF_6紫外激光器的研究

报道了利用Nd∶YAG四倍频266nm脉冲激光端面泵浦Ce∶LiCAF晶体,采用平凹谐振腔,输出296nm波长紫外激光.当输出镜透过率为20%,入射泵浦能量为13.5mJ时,获得最大输出激光脉冲能量为270μJ,脉冲宽度为3.4ns,输出激光峰值功率为79.4kW,光-光转换效率为2%,斜效率为1.6%.     

高温合金不同脉宽超快激光作用下多脉冲去除阈值

实验研究了激光脉冲宽度和脉冲个数对镍基高温合金材料去除阈值的影响,分别在290 fs,1 ps和7 ps脉宽的激光下,使用1,10,50,100,300,500和1000个不同能量的激光脉冲辐照高温合金样品表面。实验结果表明,烧蚀坑尺寸会随脉冲数的增加而增加,而脉冲宽度的增加会加大脉冲个数对烧蚀坑直径的影响。通过烧蚀坑直径的平方值与激光脉冲能量之间存在的对数关系,得到了不同脉冲宽度下镍基高温合金的多脉冲材料阈值。3种不同脉宽下的高温合金多脉冲去除阈值都存在显著的累积效应。根据去除阈值计算得到290 fs,1 ps和7 ps脉宽下的累积效应系数分别为0.88,0.86和0.78。     

脉宽对超快激光平衡光学互相关测距影响的研究

采用基于平衡光学互相关的超快激光绝对距离测量方法对大气中一段15m的空间距离进行了测量。仿真了不同脉冲宽度、不同光强损耗对平衡互相关信号的影响,理论分析表明脉宽展宽对平衡互相关信号影响较大。采用中心波长为1037nm、重复频率为260MHz的超快激光器光源,搭建了测距系统。实验验证了在脉宽分别为1.44ps、132fs时,对平衡互相关信号的影响,实验结果符合理论分析。研究了不同脉冲宽度对测量分辨力的影响,结果显示,采样时间为5ms,脉宽为1.44ps,测量分辨力不低于50μm;而当脉宽为132fs时,测量分辨力优于5μm。     

基于MOPA结构与高能量种子源的高功率皮秒掺铥光纤放大器

以单脉冲能量更高的孤子激光器为种子源,通过主振荡放大技术,获得了2 μm波段的高功率、皮秒脉冲激光器.该种子源是一个被动锁模的光纤激光器,通过优化、管理激光器谐振腔内的色散,获得了脉冲宽度为50 ps、重复频率为55.6 MHz、谱宽约为21 nm的高能量孤子脉冲输出.利用单模光纤在2μm波段的负啁啾色散特性,在进行功率放大之前将作为种子源的激光脉冲宽度展宽至600 ps.最后,经过两级放大之后,获得平均功率约23 W、脉宽为660 ps的激光输出.利用光栅对,对放大后的激光脉冲进行压缩,经测试压缩后的脉冲宽度约为0.9 ps.     

用于ps脉冲放大的大口径放电泵浦KrF激光器

 以简单的火花间隙作为放电开关，建立了一种用于ps脉冲激光放大的大口径放电泵浦KrF准分子激光器。该激光器的有效增益口径截面为4cm×3cm，在自由运转情况下最大激光输出能量为1.3J，脉宽20ns。用作ps放大器时，利用光学偏振放大方式获得了激光能量140mJ，脉冲宽度10ps的激光输出。利用XeCl激光泵浦的染料激光作为探针测量了不同放电条件下和不同气分比条件下激光的增益和吸收系数。     

全固态单纵模脉冲Nd:YVO_4环形激光器

设计并研制了全固态调Q脉冲单纵模Nd:YVO4环形激光器。利用880nm激光二极管端面抽运Nd:YVO4晶体,通过四镜环形谐振腔中插入声光调Q晶体、标准具,并优化激光谐振腔的结构,获得了重复频率为200Hz、脉宽为26.6ns的单纵模脉冲1.064μm激光输出。当泵浦功率为15 W时,单纵模激光输出的单脉冲能量为570μJ、脉冲能量稳定性优于3%。     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

LD泵浦全固态355nm紫外皮秒脉冲激光器

利用激光二极管（LD）端面抽运Nd∶YVO4激光晶体皮秒三倍频355nm全固态紫外激光器,采用半导体可饱和吸收镜（SESAM）锁模技术及皮秒再生放大技术,对1 064 nm基波采用Ⅰ类相位匹配Li3B3O5（LBO）晶体二倍频和Ⅱ类相位匹配LBO晶体三倍频,获得了稳定性好、倍频效率较高的355 nm紫外激光输出。当二极管泵浦功率为5 W时,获得了脉宽为17 ps、重复频率为1 Hz、单脉冲能量为129.6 J的稳定三倍频紫外激光输出,基频光到二倍频光和三倍频光的转换效率分别达到60.3%和16.6%,3 h输出单脉冲能量的抖动在0.58%以下。     

Acousto-optic Q-switched self-frequency-doubling Er:Yb:YAl3(BO3)4 laser at 800 nm

Actively Q-switched self-frequency-doubling laser at 800 nm was first reported in an Er:Yb:YAl3(BO3)4 crystal by using an acousto-optical modulator. At incident pump power of 16 W and pulse repetition frequency of 1 kHz, 1600 nm fundamental pulse laser with energy of 130 μJ and width of 170 ns, and self-frequency-doubling 800 nm pulse laser with energy of 20 μJ and width of 96 ns were respectively achieved in a hemispherical resonator end-pumped by a 970 nm laser diode. Pulse characteristics of fundamental and self-frequency-doubling lasers at different pulse repetition frequencies were also investigated.     

Au激光等离子体0.3~0.4nm范围X射线发射谱模拟

 应用自旋-轨道劈裂不可分辨跃迁组理论对高离化Au元素激光等离子体0.3~0.4nm范围的X射线发射谱进行了分析和解释。采用单温局域热动平衡近似,对实验谱进行理论模拟,并根据不可分辨跃迁组强度比得到等离子体电子温度。     

高功率2 μm波长可调谐超短脉冲光纤激光器

高功率2 μm波长可调谐的超短脉冲激光具有峰值功率高、脉冲宽度窄、波长可调谐等优势,在医疗手术、大气通信、光电对抗等领域具有广泛的应用。利用高峰值功率的掺铒光纤放大器泵浦高非线性光纤,在全光纤化结构中获得了1895～2165 nm可调谐的拉曼孤子输出。采用啁啾脉冲放大技术对拉曼孤子的脉冲能量进行提升,放大后拉曼孤子的单脉冲能量为1.56 μJ,平均功率达到50.6 W,脉冲宽度为83 ps。经过光栅对压缩后,脉冲宽度降低至1.23 ps,平均功率为22 W,峰值功率达到0.55 MW。放大后的脉冲仍具有波长调谐的能力,当输出功率为5 W和50.6 W时,脉冲的波长调谐范围分别为38 nm和8 nm。     

Tunable repetition frequency passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

We first report a tunable repetition frequency passively Q-switched 2053 nm Tm,Ho:YLF laser by tuning the tilt angle of the Cr:ZnS saturable absorber. When the pump power is 1.4 W, the pulse repetition frequency can be tuned from 1.6 to 19.4 kHz by changing the position of Cr²⁺:ZnS saturable absorber along the cavity axis. When the Cr²⁺:ZnS saturable absorber is near the Tm,Ho:YLF crystal, the repetition frequency can be tuned from 0.8 to 4.0 kHz by changing the tilt angle of the Cr²⁺:ZnS saturable absorber, furthermore, the pulse width and the pulse energy are near constants of 1.7 μs and 3.5 μJ, respectively.     

Narrow-bandwidth, mid-infrared, seeded optical parametric generation in 90° phase-matched CdSiP₂ crystal pumped by diffraction limited 500 ps pulses at 1064 nm

Low-threshold, efficient optical parametric generation at ～6100 nm is demonstrated using CdSiP₂ nonlinear crystal at 1 to 10?kHz repetition rates with relatively long 500?ps pump pulses at 1064?nm. Maximum single pulse energy of 8.7?μJ and average power of 79?mW are achieved for the idler. Seeding at the signal wavelength is employed using a distributed feedback laser diode, which enables approximately tenfold narrowing of the idler bandwidth down to less than 1?nm.     

Diode-pumped passively Q-switched and mode-locked Nd:GGG laser at 1.3 μm with V<Superscript>3+</Superscript>:YAG saturable absorber

Using V³⁺:YAG crystal as the saturable absorber, a diode-pumped passively Q-switched and mode-locked Nd:GGG laser operating at 1.3 μm is realized for the first time. The mode-locking modulation depth of nearly 100% has been achieved. The maximum output power and the single Q-switched pulse energy are 410 mW and 8.3 μJ. The mode-locked pulse inside the Q-switched pulse has a repetition rate of 349 MHz, and its average pulse width is estimated to be about 750 ps.