Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy |
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Authors: | GUO Jie SUN Wei-Guo PENG Zhen-Yu ZHOU Zhi-Qiang XU Ying-Qiang NIU Zhi-Chuan |
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Institution: | Material School, NorthWest Polytechnical University, Xi'an 710000Luoyang Optical Electronic Center, PO Box 030, Luoyang 471009Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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Abstract: | Short period InAs(4ML)/GaSb(8ML) superlattices (SLs) with InSb- and mixed-like (or Ga1-xInxAs1-ySby-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties. |
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Keywords: | 78 67 Pt 85 60 Gz 81 15 Hi 81 05 Ea |
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