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1.
Using the nonrenormalization theorem and Pohlmeyer's theorem, it is proven that there cannot be an asymptotic safety scenario for the Wess–Zumino model unless there exists a non-trivial fixed point with (i) a negative anomalous dimension (ii) a relevant direction belonging to the Kähler potential.  相似文献   
2.
It has been noticed that a distinct resemblance exists at large angles among angular distributions measured for reaction channels at the energies of some resonance-like structures in the 12C+12C and 14C+16O systems. It is pointed out that such forms are typical of a diffraction pattern of a broad band of coherent partial waves. Received: 5 October 1998 / Revised version: 8 December 1998  相似文献   
3.
In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.  相似文献   
4.
Homoepitaxial growth of Au on Bi-covered Au(1 1 1) was studied at room temperature using reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). From observations of RHEED it is found that the Au(1 1 1) (23 × 1) reconstruction structure changes to a (1 × 1) by about 0.16-0.5 ML deposition of Bi and to a (2√3 × 2√3)R30° by about 1.0 ML deposition of Bi, respectively. The surface morphology evolution by Bi deposition leads to a change of Au homoepitaxial growth behavior from layer-by-layer to step flow. This indicates that the surface diffusion distance of Au atoms on the Bi-precovered (1 × 1) and (2√3 × 2√3)R30° surfaces is longer than that on the Au(1 1 1) (23 × 1) clean surfaces. A strong surface segregation of Bi was found at top of surface. It is concluded that Bi atoms acted as an effective surfactant in the Au homoepitaxial growth by promoting Au intralayer mass transport.  相似文献   
5.
High-quality, lattice-matched InGaP on exact (100) GaAs was successfully grown by molecular beam epitaxy with a GaP decomposition source. The ordering parameter (η) of the InGaP is investigated as a function of the growth temperature. η is as low as 0.22 and almost insensitive to the growth temperature below 460 °C. It increases abruptly around 475 °C and has a maximum value of 0.35 at ≈490 °C. Double crystal X-ray diffraction and a low-temperature photoluminescence spectrum reveal that the present growth method is robust and provides better quality InGaP compared to other state-of-the-art growth technologies. Received: 20 November 2000 / Accepted: 27 January 2001 / Published online: 21 March 2001  相似文献   
6.
It has recently been pointed out that the existence of massless chiral edge excitations has important strong coupling consequences for the topological concept of an instanton vacuum. In the first part of this paper we elaborate on the effective action for “edge excitations” in the Grassmannian U (m + n)/U (m) × U (n) non-linear sigma model in the presence of the θ term. This effective action contains complete information on the low energy dynamics of the system and defines the renormalization of the theory in an unambiguous manner. In the second part of this paper we revisit the instanton methodology and embark on the non-perturbative aspects of the renormalization group including the anomalous dimension of mass terms. The non-perturbative corrections to both the β and γ functions are obtained while avoiding the technical difficulties associated with the idea of constrained instantons. In the final part of this paper we present the detailed consequences of our computations for the quantum critical behavior at θ = π. In the range 0 ? mn ? 1 we find quantum critical behavior with exponents that vary continuously with varying values of m and n. Our results display a smooth interpolation between the physically very different theories with m = n = 0 (disordered electron gas, quantum Hall effect) and m = n = 1 (O (3) non-linear sigma model, quantum spin chains) respectively, in which cases the critical indices are known from other sources. We conclude that instantons provide not only a qualitative assessment of the singularity structure of the theory as a whole, but also remarkably accurate numerical estimates of the quantum critical details (critical indices) at θ = π for varying values of m and n.  相似文献   
7.
Bulk amorphous Co(100−x)Ptx (0≤x≤50) nano-alloys have been synthesized using high frequency ultrasound, displaying single domain (4-5 nm) behavior wherein weakly exchange-coupled particles lead to a field-dependent resistivity behavior. Magneto-resistivity is correlated to the order-disorder parameter in these powder compacts. The plot of Δρ/ρ0 as a function of reduced magnetization indicates that all the systems are weakly exchange coupled.  相似文献   
8.
娄朝刚 《中国物理快报》2004,21(12):2493-2495
A nonmean-field model for the ripening of two-dimensional islands is presented. In this model, the adatom sea is divided into many small cells that are the polygons of a Voronoi network. The chemical potentials of adatom seas surrounding different islands are different. Strain generated by lattice mismatch is introduced into the model.Computer simulation under periodic boundary conditions is carried out to describe the island ripening in two cases (with and without strain), and demonstrates that small islands may grow faster than large islands, which cannot occur in the mean-field model. The simulated results also show that including strain will slow down the evolution of average island size, and an explanation for this is given.  相似文献   
9.
10.
We have carried out an angle-resolved photoemission study for CoSi2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates.  相似文献   
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