碳化硅薄膜脉冲激光晶化特性研究

采用XeCl准分子激光对非晶碳化硅(a-SiC)薄膜的脉冲激光晶化特性进行了研究.通过原子力显微镜（AFM）和Raman光谱技术对退火前后薄膜样品的形貌、结构及物相特性进行了分析.结果表明，选用合适的激光能量采用激光退火技术能够实现a-SiC薄膜的纳米晶化.退火薄膜中的纳米颗粒大小随着激光能量密度的增加而增大；Raman谱分析结果显示了退火后的薄膜的晶态结构特性并给出了伴随退火过程存在的物相分凝现象.根据以上结果并结合激光退火特性，对a-SiC的脉冲激光晶化机理进行了讨论. 关键词： 激光退火 晶化 碳化硅

Pulse laser crystallization of silicon carbon thin films

The pulsed laser crystallization of amorphous silicon carbon (a SiC) thin films have been implemented by using XeCl excimer laser. The a SiC thin films were prepared on silicon and quartz substrates by pulsed laser deposition. The surface morphology, atomic order and phase of the as deposited and post annealing films have been analyzed by atomic force microscopy (AFM) and Raman scattering spectroscopy. AFM results show that a SiC films can be nanocrystallized at a proper laser energy. The size of nanocrystals in the post annealing films increases with the laser energy density; the separation into crystalline silicon and carbon after laser annealing is identified through Raman analysis. The mechanism of the pulsed laser crystallization of a SiC films is discussed to account for the post annealing characteristics.