大尺寸电阻加热式碳化硅晶体生长热场设计与优化

大尺寸低缺陷碳化硅(SiC)单晶体是功率器件和射频(RF)器件的重要基础材料,物理气相传输(physical vapor transport, PVT)法是目前生长大尺寸SiC单晶体的主要方法。获得大尺寸高品质晶体的核心是通过调节组分、温度、压力实现气相组分在晶体生长界面均匀定向结晶,同时尽可能减小晶体的热应力。本文对电阻加热式8英寸(1英寸=2.54 cm)碳化硅大尺寸晶体生长系统展开热场设计研究。首先建立描述碳化硅原料受热分解热质输运及其多孔结构演变、系统热输运的物理和数学模型,进而使用数值模拟方法研究加热器位置、加热器功率和辐射孔径对温度分布的影响及其规律,并优化热场结构。数值模拟结果显示,通过优化散热孔形状、保温棉的结构等设计参数,电阻加热式大尺寸晶体生长系统在晶锭厚度变化、多孔介质原料消耗的情况下均能达到较低的晶体横向温度梯度和较高的纵向温度梯度。     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。     

First-principles study on the electronic transport properties of M/SiC Schottky junctions (M=Ag,Au and Pd)

In this work, we investigate the electronic transport properties of M/SiC Schottky junctions (M=Ag, Au and Pd). The results show that the band structures of hydrogenated zigzag SiC nanoribbons (ZSiCNRs) and hydrogenated armchair SiC nanoribbons (ASiCNRs) are almost unaffected by their width changes. When the hydrogenated 7-ASiCNR is directly connected to the Ag, Au and Pd electrode, the transmission spectra of three metal-semiconductor junctions show that the Fermi level of metal is pinned to a fixed position in the semiconductor band gap of hydrogenated 7-ASiCNR. The nearly same rectifying current-voltage characteristics are found in three metal-semiconductor junctions. The average rectification ratios of three M/SiC Schottky junctions are all in the neighborhood of 10⁶. In other word, the M/SiC Schottky junction has remarkable application prospect as the candidate for Schottky Diode.     

纳米SiC基光催化剂研究进展

Industrialization undoubtedly boosts economic development and improves the standard of living; however, it also leads to some serious problems, including the energy crisis, environmental pollution, and global warming. These problems are associated with or caused by the high carbon dioxide (CO₂) and sulfur dioxide (SO₂) emissions from the burning of fossil fuels such as coal, oil, and gas. Photocatalysis is considered one of the most promising technologies for eliminating these problems because of the possibility of converting CO₂ into hydrocarbon fuels and other valuable chemicals using solar energy, hydrogen (H₂) production from water (H₂O) electrolysis, and degradation of pollutants. Among the various photocatalysts, silicon carbide (SiC) has great potential in the fields of photocatalysis, photoelectrocatalysis, and electrocatalysis because of its good electrical properties and photoelectrochemistry. This review is divided into six sections: introduction, fundamentals of nanostructured SiC, synthesis methods for obtaining nanostructured SiC photocatalysts, strategies for improving the activity of nanostructured SiC photocatalysts, applications of nanostructured SiC photocatalysts, and conclusions and prospects. The fundamentals of nanostructured SiC include its physicochemical characteristics. It possesses a range of unique physical properties, such as extreme hardness, high mechanical stability at high temperatures, a low thermal expansion coefficient, wide bandgap, and superior thermal conductivity. It also possesses exceptional chemical characteristics, such as high oxidation and corrosion resistance. The synthesis methods for obtaining nanostructured SiC have been systematically summarized as follows: Template growth, sol-gel, organic precursor pyrolysis, solvothermal synthesis, arc discharge, carbon thermal reduction, and electrospinning. These synthesis methods require high temperatures, and the reaction mechanism involves SiC formation via the reaction between carbon and silicon oxide. In the section of the review involving the strategies for improving the activity of nanostructured SiC photocatalysts, seven strategies are discussed, viz., element doping, construction of Z-scheme (or S-scheme) systems, supported co-catalysts, visible photosensitization, construction of semiconductor heterojunctions, supported carbon materials, and construction of nanostructures. All of these strategies, except element doping and visible photosensitization, concentrate on enhancing the separation of holes and electrons, while suppressing their recombination, thus improving the photocatalytic performance of the nanostructured SiC photocatalysts. Regarding the element doping and visible photosensitization strategies, element doping can narrow the bandgap of SiC, which generates more holes and electrons to improve photocatalytic activity. On the other hand, the principle of visible photosensitization is that photo-induced electrons move from photosensitizers to the conduction band of SiC to participate in the reaction, thus enhancing the photocatalytic performance. In the section on the applications of nanostructured SiC, photocatalytic H₂ production, pollutant degradation, CO₂ reduction, photoelectrocatalytic, and electrocatalytic applications will be discussed. The mechanism of a photocatalytic reaction requires the SiC photocatalyst to produce photo-induced electrons and holes during irradiation, which participate in the photocatalytic reaction. For example, photo-induced electrons can transform protons into H₂, as well as CO₂ into methane, methanol, or formic acid. Furthermore, photo-induced holes can convert organic waste into H₂O and CO₂. For photoelectrocatalytic and electrocatalytic applications, SiC is used as a catalyst under high temperatures and highly acidic or basic environments because of its remarkable physicochemical characteristics, including low thermal expansion, superior thermal conductivity, and high oxidation and corrosion resistance. The last section of the review will reveal the major obstacles impeding the industrial application of nanostructured SiC photocatalysts, such as insufficient visible absorption, slow reaction kinetics, and hard fabrication, as well as provide some ideas on how to overcome these obstacles.      

Molecularly engineered graphene surfaces for sensing applications: A review

Graphene is scientifically and commercially important because of its unique molecular structure which is monoatomic in thickness, rigorously two-dimensional and highly conjugated. Consequently, graphene exhibits exceptional electrical, optical, thermal and mechanical properties. Herein, we critically discuss the surface modification of graphene, the specific advantages that graphene-based materials can provide over other materials in sensor research and their related chemical and electrochemical properties. Furthermore, we describe the latest developments in the use of these materials for sensing technology, including chemical sensors and biosensors and their applications in security, environmental safety and diseases detection and diagnosis.     

Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs

Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of bilayer SiCNSs (BL-SiCNSs) and its effect on optical properties are studied by first principles. Taking the charge and dipole moment of the layers as parameters, an interlayer coupling model is constructed which is more convenient to control the photoelectric properties. The results show that the stronger the interlayer coupling, the smaller the band gap of BL-SiCNSs. The interlayer coupling also changes the number of absorption peaks and causes the red or blue shift of absorption peaks. The strong interlayer coupling can produce obvious dispersion and regulate the optical transmission properties. The larger the interlayer distance, the smaller the permittivity in the vertical direction. However, the permittivity of the parallel direction is negative in the range of 150-300 nm, showing obvious metallicity. It is expected that the results will provide a meaningful theoretical basis for further study of SiCNSs optoelectronic devices.     

SiC粒子非均布引起铝基复合材料的损伤分析

 根据电镜断面考察结果，以Gurson模型为本构方程的有限单元 法对包体模型及三维非均匀模型进行了详细分析. 为了评价应力-应变 关系及损伤的主要因素，考虑了基体中SiC粒子的体积率和径比的非均 匀分布. 其结果表明，用这种非均匀模型能很好地仿真铝基体在大量塑 性变形之后所发生的韧窝破坏过程. SiC粒子体积率、径比及其位置的 非均匀性，对局部和整体损伤过程与应力-应变关系的影响相当大. 当 Sic粒子径比为1.0，并在基体中均匀分布时，断裂应变会大幅度增大.     

无压浸渗SiC/Al复合材料的摩擦磨损性能研究

采用无压浸渗法制备不同碳化硅粒度和体积分数的SiC/Al复合材料,利用销-盘摩擦磨损试验机考察了碳化硅的粒度和体积分数等对SiC/Al复合材料干摩擦磨损性能的影响,采用扫描电子显微镜观察磨损表面形貌并分析其磨损机理.结果表明,SiC/Al复合材料的磨损率随碳化硅体积分数增加而降低.与灰铸铁配副时,材料的摩擦系数与磨损率明显依赖于碳化硅粒度,二者均随碳化硅粒度增加而降低.复合材料的磨损机制以碳化硅颗粒的碎裂、脱落和表面犁沟为主要特征.     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.