| Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes |
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| 引用本文： | 李密锋,倪海桥,丁颖,Bajek David,Kong Liang,Cataluna Maria Ana,牛智川.Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes[J].中国物理 B,2014,23(2):27803-027803. |
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| 作者姓名： | 李密锋 倪海桥 丁颖 Bajek David Kong Liang Cataluna Maria Ana 牛智川 |
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| 作者单位： | a State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, UK |
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| 基金项目： | Project supported by the Natural Science Foundation of Beijing, China （Grant No. 4112060）, the Special Foundation for National Key Scientific Instrument, China （Grant No. 2012YQ140005）, the Open Fund of High Power Laser Laboratory, China Academy of Engineering Physics （Grant No. 2013HEL03）, the National Natural Science Foundation of China （Grant No. 61274125）, the National Basic Research Program, China （Grant No. 2010CB327601）, the State Key Laboratory on Integrated Optoelectronics Open Project, China （Grant No. 2011KFB002）. Y. Ding was financially supported by a Marie Curie International Incoming Fellowship within the 7th European Community Framework Programme, and M. A. Cataluna by the financial support through a Royal Academy of Engineering/EPSRC Research Fellowship. |
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| 摘 要： | The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the com- bination of a growth temperature of 490℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10^-6 Torr （1 Torr = 1.33322×10^2 Pa）, provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a 19.7-GHz repetition rate.
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| 关 键 词： | 被动锁模激光器 量子点结构 激光二极管 InAs GaAs 最优化 应用 光致发光 |
| 收稿时间： | 2013-06-13 |
Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes |
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| Li Mi-Feng,Ni Hai-Qiao,Ding Ying,Bajek David,Kong Liang,Cataluna Maria Ana,Niu Zhi-Chuan.Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes[J].Chinese Physics B,2014,23(2):27803-027803. |
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| Authors: | Li Mi-Feng Ni Hai-Qiao Ding Ying Bajek David Kong Liang Cataluna Maria Ana Niu Zhi-Chuan |
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| Institution: | a State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, UK |
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| Abstract: | The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 ℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10-6 Torr (1 Torr=1.33322×102 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ～ 19.7-GHz repetition rate. |
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| Keywords: | InAs quantum dots molecular beam epitaxy mode-locked laser short pulse |
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