Passively mode-locked Nd:YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region |
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| Authors: | YongGang Wang XiaoYu Ma LiQun Sun |
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| Institution: | a Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, PR China
b State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, PR China |
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| Abstract: | Semiconductor saturable absorber mirrors (SESAMs) with GaAs/air interface relaxation region have less non-saturable loss than those with low temperature grown In0.25Ga0.75As relaxation region. A thin layer of SiO2 and a high reflectivity film of Si/(SiO2/Si)4 were coated on the SESAMs, respectively in order to improve the SESAM's threshold for damage. The passively continuous wave mode-locked lasers with two such SESAMs were demonstrated, and the SESAM with high reflectivity film of Si/(SiO2/Si)4 is proved to be helpful for high output power. |
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| Keywords: | 42 65 Tg 42 79 Wc 42 65 Re 42 60 Gd |
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