双激光脉冲打靶形成Gd等离子体的极紫外光谱辐射

高端芯片制造所需要的极紫外光刻技术位于我国当前面临35项"卡脖子"关键核心技术之首.高转换效率的极紫外光源是极紫外光刻系统的重要组成部分.本文通过采用双激光脉冲打靶技术实现较强的6.7 nm极紫外光输出.首先,理论计算Gd¹⁸⁺—Gd²⁷⁺离子最外层4d壳层的4p-4d和4d-4f能级之间跃迁、以及Gd¹⁴⁺—Gd¹⁷⁺离子最外层4f壳层的4d-4f能级之间跃迁对波长为6.7 nm附近极紫外光的贡献.其后开展实验研究,结果表明,随着双脉冲之间延时的逐渐增加,波长为6.7 nm附近的极紫外光辐射强度呈现先减弱、后增加、之后再减弱的变化趋势,在双脉冲延时为100 ns处产生的极紫外光辐射最强.并且,在延时为100 ns处产生的光谱效率最高,相比于单脉冲激光产生的光谱效率提升了33%.此外,发现双激光脉冲打靶技术可以有效地减弱等离子体的自吸收效应,获得的6.7 nm附近极紫外光谱宽度均小于单激光脉冲打靶的情形,且在脉冲延时为30 ns时刻所产生的光谱宽度最窄,约为单独主脉冲产生极紫外光谱宽度的1/3.同时...     

近紫外激发Gd2ZnTiO6∶Eu3+,Li+红色荧光粉的制备及荧光性能

采用溶胶-凝胶法成功制备出系列Eu³⁺掺杂和Li⁺、Eu³⁺共掺杂Gd₂ZnTiO₆红色荧光粉,并研究Li⁺、Eu³⁺掺杂对样品的晶体结构、微观形貌及发光性能的影响。结果显示,所制备的Gd₂ZnTiO₆∶Eu³⁺,Li⁺(GZT∶Eu³⁺,Li⁺) 荧光粉为双钙钛矿结构,属于单斜晶系(空间群:P2₁/n),大小为10 μm的无规则形状的颗粒。在395 nm近紫外光的激发下,GZT∶Eu³⁺的发射光谱展示出典型的Eu³⁺线状特征光谱,发射峰中心位于615 nm处,归属于Eu³⁺的⁵D₀→⁷F₂跃迁。Eu³⁺的最佳掺杂浓度为0.07(摩尔分数),样品显示明显的浓度猝灭效应,其机制为电偶极子-电偶极子(d-d)相互作用。此外,研究还发现,Li⁺掺杂对样品的晶体结构、微观形貌没有影响,但是一定量的Li⁺掺杂可以显著增强样品的荧光强度。当Li⁺浓度为0.05时,荧光粉发射主峰强度增强程度最大,提高至原来的4.3倍,说明通过Li⁺、Eu³⁺共掺杂可以获得高亮度的GZT红色荧光粉。GZT∶0.14Eu³⁺,0.05Li⁺荧光粉的CIE色坐标为(0.631 1,0.375 3)与标准红光色坐标(0.670,0.330)较为接近,是一种潜在的LED用红色荧光粉。     

The new structure type Gd3Ni7Al14

The crystal structure of Gd₃Ni₇Al₁₄ (trigadolinium heptanickel tetradecaaluminide) belongs to a family of two‐layer structures and can be described as an assembly of interpenetrating centred straight prisms. For the Ni atoms, trigonal prisms (Al₄Gd₂ and Al₆) are observed, the Al atoms are inside tetragonal (Ni₂Al₂Gd₄, Ni₂Al₄Gd₂, Al₄Gd₄, Ni₄Al₄ and Al₈) and pentagonal (Ni₄Al₆ and Al₁₀) prisms, while the Gd atoms are at the centres of pentagonal (Ni₄Al₆) and hexagonal (Ni₄Al₈) prisms. In each case, the true coordination polyhedron is a capped prism, also including atoms from the same layer. The structural features of Gd₃Ni₇Al₁₄ are similar to those of the intermetallides PrNi₂Al₃ and ZrNiAl. In all these structures, Ni‐centred trigonal prisms form infinite columns via common triangular faces. The columns share prism edges and form a three‐dimensional framework with six‐membered rings in the (001) plane in the case of the PrNi₂Al₃ and ZrNiAl types. In the case of Gd₃Ni₇Al₁₄, six‐membered rings are also observed, but only two‐thirds of the rings are interconnected via prism edges.     

Gd~(3+),Tm~(3+)和Yb~(3+)掺杂的Y_2O_3微晶中Gd~(3+)离子的紫外上转换发光及其增强的研究

采用均相沉淀法制备了Y(OH)3微米颗粒,经1 100℃焙烧后制备出具有上转换发光性质的Yb3+-Tm3+-Gd3+共掺的Y2O3微米晶体,讨论了Yb3+-Tm3+-Gd3+在Y2O3中能量传递过程及壳层对发光强度的影响。980 nm近红外光激发下的上转换光谱表明,在Yb3+-Tm3+-Gd3+共掺Y2O3体系中,核-壳结构大幅提高了Gd3+离子和Tm3+离子的上转换发光强度,尤其是样品在紫外发光部分的增强相比于可见和红外光部分更为明显。同时,通过研究Tm3+和Gd3+在不同波段的发光强度与泵浦功率的关系探讨了氧化物中上转换发光的机制。     

不同晶体结构Gd2(MoO4)3:Eu3+荧光粉的合成及其发光性能研究

采用溶胶凝胶-燃烧法,柠檬酸为络合剂合成出系列Gd₂(MoO₄)₃:Eu³⁺荧光粉.利用X射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱对样品的结构、形貌和发光性能进行了研究.XRD分析表明:稀土离子与柠檬酸为1:0.5时,800℃热处理获得单斜结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉.单斜结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉到正交结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉的转换可以通过改变稀土离子与柠檬酸摩尔比和热处理温度等合成条件实现.Gd₂(MoO₄)₃:Eu³⁺荧光粉的形貌受合成条件的影响.荧光光谱研究表明:Gd₂(MoO₄)₃:Eu³⁺荧光粉的主发射峰位于616 nm处来自于Eu³⁺的⁵D₀→⁷F₂电偶极跃迁.正交结构的Gd₂(MoO₄)₃:Eu³⁺荧光粉发射强度明显高于单斜结构的荧光粉.计算⁵D₀→⁷F₂与⁵D₀→⁷F₁跃迁发射的相对强度比值表明:正交结构的Gd₂(MoO₄)₃:Eu³⁺中Eu³⁺局域环境的对称性较高。     

Gd~(3+)掺杂浓度对NaErF_4∶Yb纳米晶上转换荧光性能的影响

采用温和的溶剂热法制备较强红光发射的NaErF4∶Yb,Gd上转换纳米晶,控制Gd~(3+)的掺杂浓度实现了晶相和尺寸可控以及上转换荧光的增强。X射线衍射谱(XRD)、透射电子显微镜图像(TEM)和上转换发射光谱结果分析表明,Gd~(3+)掺杂可以有效地促进NaErF_4纳米晶的晶相由立方相向六角相转变,并且减小纳米粒子的尺寸。随着Gd~(3+)掺杂浓度的上升,上转换荧光强度明显增大。当Gd~(3+)摩尔分数为25%时,样品的上转换荧光强度达到最大。同时,研究了在980 nm近红外激光激发下,Yb~(3+)与Er~(3+)间有效的能量传递以及上转换发光机制。     

中子探测晶体Li6Gd(BO3)3:Ce的光谱特性研究

文章用提拉法生长出Li₆Gd(BO₃)₃:Ce晶体,并对其光谱性能与发光过程进行了探索. 借助于真空紫外-紫外透过光谱测试,发现晶体的透过光谱中存在Ce³⁺离子和Gd³⁺的特征吸收峰,同时还存在与Ce⁴⁺离子相关的电荷迁移带. 对晶体的真空紫外-紫外激发发射光谱进行研究发现,在晶体存在着Ce³⁺离子的5d→4f辐射跃迁发光与Gd³⁺离子的4f→4f辐射跃迁发光,而且存在着Gd³⁺→Ce³⁺之间的能量传递. 对Li₆Gd(BO₃)₃:Ce晶体的X射线与γ射线激发发射光谱研究可知,晶体在高能射线激发下的闪烁光主要是Ce³⁺离子的发光. 关键词： 6Gd(BO₃)₃:Ce晶体')" href="#">Li₆Gd(BO₃)₃:Ce晶体 真空紫外-紫外透过光谱 真空紫外-紫外激发发射光谱 能量传递     

Synthesis,structure and dielectric properties of a novel Gd coordination polymer based on 2-（ pyridin-4-yl ）- 1H-i midazole-4,B -dicarboxylate

A new Gd coordination polymer based on 2-（pyridin-4-yl）-I H-imidazole-4,5-dicarboxylate （H3PIDC） has been synthesized under hydrothermal conditions, formulated as {[Gd3（HPIDC）3（PIDC）（H2O）4].3H2O}n （1）. The compound crystallizes in the monoclinic system, space group C2/c with a=20.951（7）, b = 9.515（3）, c = 27.483（10） A,β= 106.176（6）°, Z = 4, V= 5262（3） A3, C40 H45 Gd3 N12 O30, Dc = 2.071 g/cm3, Mr=1645.63, λ （MoKa）=0.71073A, μ=3.846mm-1, F（000）=3204, the final R=0.0390 and wR= 0.1332. Complex 1 is a two-dimensional MOF built up from T-shaped 3-connected HPIDC2 , PIDC3 and 4-connected metal nodes. Dielectric constant of complex 1 was measured at different frequencies with temperature variation.     

Influence of Gd doping on the absolute quantum efficiency and lifetime of EuxGd1-x（TTA）3phens

Absolute quantum yield （Ф） is one of the most important parameters to evaluate the potential of novel materials. Lanthanide complexes EuxGd1-x（TTA）3phens are synthesized with the ratio of Gd3＋ dopant concentration ranging from 10% to 90% to improve the absolute quantum yield. EuxGd1-x（TTA）3phens possess similar infrared and ultraviolet spectra, showing that they have similar molecular structures. The absolute emission quantum yields of EuxGd1-x（TTA）3phens are determined using a fluoromax-4 spectrofluorometer equipped with an integrating sphere. The fluorescence lifetimes of the EuxGd1-x（TTA）3phens are measured in the same experiment. It was found that both absolute quantum yields and fluorescence lifetimes of EuxGd1-x（TTA）3phens are of quasi-periodic variation with the change of the Gd3. dopant concentrations. The absolute quantum efficiency and fluorescence lifetime vary with respect to the Gd content in an opposite fashion, indicating that the rate of energy absorption by the EuxGd1-x（TTA）3phens and the conversion to light energy is critical for the absolute quantum efficiency. The radiative rate constant Kr and non-radiative rate constant Knr are calculated. The dependence of Kr and Knr on the Gd3＋ dopant concentrations is very similar to that of absolute quantum efficiency. The radiation rate constant Kr and absolute quantum efficiency have a linear relationship.