| Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AIGaN Schottky Contacts |
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| 作者姓名： | 桑立雯 秦志新 岑龙斌 陈志忠 杨志坚 沈波 张国义 |
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| 作者单位： | State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing 100871 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 60476028 and 60325413, the National Basic Research Programme of China under Grant No 2006CB604908, and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China under Grant No 705002. |
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| 摘 要： | Al0.2 Ga0.8N/GaN samples are grown by metalorganic chemical vapour deposition （MOCVD） method on （0001） sapphire substrates. A 10nm-thick Ni layer is deposited on AlGaN as the transparent Schottky contact. The effect of postannealing in oxygen ambient on the electrical properties of Ni/AlGaN is studied by current-voltage- temperature （I-V-T） measurement. The annealing at a relatively low temperature of 300℃ for 90 s results in a decrease of the ideality factor from 2.03 to 1.30 and an increase of the Schottky barrier height from 0.77eV to 0.954 e V. The I-V-T analysis confirms the improvement originated from the formation of NiO, a layer with higher resistance, which could passivate the surface states of AlGaN and suppress the tunnelling current. Furthermore, the annealing also leads to an increase of the transmittance of the contacts from 57.5% to 78.2%, which would be favourable for A1GaN-based photodetectors.
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| 关 键 词： | 镍 重离子 电子连接 温度 |
| 收稿时间： | 2007-5-9 |
| 修稿时间： | 2007-05-09 |
Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts |
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| SANG Li-Wen,QIN Zhi-Xin,CEN Long-Bin,CHEN Zhi-Zhong,YANG Zhi-Jian,SHEN Bo,ZHANG Guo-Yi.Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AIGaN Schottky Contacts[J].Chinese Physics Letters,2007,24(10):2938-2941. |
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| Authors: | SANG Li-Wen QIN Zhi-Xin CEN Long-Bin CHEN Zhi-Zhong YANG Zhi-Jian SHEN Bo ZHANG Guo-Yi |
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| Institution: | State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing 100871 |
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| Abstract: | Al0.2Ga0.8N/GaN samples are grown by metalorganic chemical vapour deposition (MOCVD) method on (0001) sapphire substrates. A 10nm-thick Ni layer is deposited on AlGaN as the transparent Schottky contact. The effect of postannealing in oxygen ambient on the electrical properties of Ni/AlGaN is studied by current--voltage--temperature (I--V--T) measurement. The annealing at a relatively low temperature of 300°C for 90s results in adecrease of the ideality factor from 2.03 to 1.30 and an increase of theSchottky barrier height from 0.77eV to 0.954eV. The I--V--T analysis confirms the improvement originated from the formation of NiO, a layer with higher resistance, which could passivate the surface states of AlGaN and suppress the tunnelling current. Furthermore, the annealing also leads to an increase of the transmittance of the contacts from 57.5% to 78.2%, which would be favourable for AlGaN-based photodetectors. |
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| Keywords: | 73 30 +y 85 30 De 73 61 Ey |
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