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1.
王文文  李诺  韩建强  罗涛  肖涛 《应用声学》2020,39(2):306-315
声发射技术作为一种动态无损检测手段,主要实现对材料产生的缺陷进行动态监测及损伤位置的预测。微机电系统声发射传感器在检测材料疲劳裂纹位置和扩展方向上应用广泛,实现其对材料裂纹的3-D动态位移检测,对于无损检测技术的发展具有重要意义。该文提出了一种新型3-D微机电系统声发射传感器,首先对3-D微机电系统声发射传感器进行了结构设计和性能分析,结构方面主要包括z方向响应传感单元和x、y方向响应传感单元设计;其次通过传感器的阻尼、谐振点处灵敏度计算,证明传感器的性能良好;最后采用有限元软件ANSYS对z方向响应传感单元做了模态和谐响应分析,x、y方向响应传感单元做了模态分析和谐响应分析,仿真结果与理论值吻合较好,验证了结构设计的合理性,对实现材料裂纹的三维动态检测具有一定的参考意义。  相似文献   
2.
As shown by Crow in 1970, the evolution of two almost parallel vortex filaments with opposite circulation exhibits a long-wave instability. Ultimately, the symmetric mode increases its amplitude reconnecting both filaments and ending into the formation of an almost periodic structure of vortex rings. This is a universal process, which appears in a wide range of scales: from the vortex trails behind an airplane to a microscopic scale of superfluids and Bose–Einstein condensates. In this paper, I will focus on the vortex reconnection for the latter case by employing Gross–Pitaevskii theory. Essentially, I focus on the well-known laws of interaction and motion of vortex filaments. By means of numerical simulations, as well as theoretically, I show that a self-similar finite-time dynamics manifests near the reconnection time. A self-similar profile is selected showing excellent agreement with numerical simulations.  相似文献   
3.
Nickel silicide formation on Si(1 1 0) and Si(1 0 0) substrate was investigated in this paper. It is confirmed that nickel monosilicide (NiSi) starts to form after 450 °C annealing for Si(1 0 0) substrate, but a higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate, which is demonstrated by X-ray diffraction (XRD) and Raman scattering spectroscopy. The higher formation temperature of NiSi is attributed to the larger Ni2Si grain size formed on Si(1 1 0) substrate. Ni silicided Schottky contacts on both Si(1 0 0) and Si(1 1 0) substrates were also fabricated for electrical characteristics evaluation. It clearly reveals that the rectifying characteristics of NiSi/n-Si(1 1 0) Schottky contacts is inferior to that of NiSi/n-Si(1 0 0) Schottky contacts, which is attributed to a lower Schottky barrier height and a rougher contact interface. The formation kinetics for nickel silicide on Si(1 1 0) substrate is also discussed in this paper.  相似文献   
4.
Zirconium-doped hematite particles of the type xZrO2-(1−x)α-Fe2O3 (x=0.1, 0.5) were synthesized using mechanochemical activation and characterized by X-ray diffraction (XRD) and Mössbauer spectroscopy. For x=0.1 all zirconia was dissolved in the hematite lattice after 12 h of ball milling and a particle size of 9 nm was obtained. We obtained the recoilless fraction as function of the ball milling time for each value of the molar concentration x. The appearance of nanoparticles in the system was demonstrated based on these plots. We further correlated the structural properties of the zirconium-doped hematite system with the sensing properties of the best candidate in the series. These were measured as function of temperature, gas concentration (carbon monoxide and methane) and variable humidity of air. The material system was found to be sensitive over the entire range of CO concentrations and the linearity of the sensor signal was not affected by the relative humidity of air, qualities which make it the ideal system for gas sensing.  相似文献   
5.
6.
F. Debbasch  W.A. van Leeuwen 《Physica A》2009,388(9):1818-1834
In a preceding article we presented a general relativistic treatment of the derivation of the Boltzmann equation. The four-momenta occurring in this formalism were all on-shell four-momenta, verifying the mass-shell restriction p2=m2c2. Due to this restriction, the resulting Boltzmann equation, although covariant, turned out to be not manifestly covariant. In the present article we switch from mass-shell momenta to off-shell momenta, and thereby arrive at a Boltzmann equation that is manifestly covariant.  相似文献   
7.
Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively evaporated onto Ge (1 1 1) that was ICP etched at a rate of 60 Å per minute for three or ten minute intervals. Although plasma cleaning is known to introduce defects that were observed with DLTS, the diodes exhibited excellent current-voltage characteristics when cooled down to 80 K. Current-temperature (IT) scans that were recorded from 20 K up to 300 K after cooling under reverse bias showed no effect of recombination/generation (RG). On the other hand, IT scans that were recorded after cooling under zero or forward bias clearly exhibited RG effects in the 100-240 K temperature range. This effect was found to be completely reversible. In addition, ICP etching leads to superior devices when compared to devices manufactured by RF sputter deposition.  相似文献   
8.
Positronium annihilation lifetime (PAL) spectroscopy and Doppler broadening energy spectra (DBES) have been used to search for selectivity and sensitivity for cancerous skin samples with and without cancer. This study is to further explore the melanoma cancerous system and other different types of skin samples. We found that the S parameter in melanoma skin samples cut at 0.39 mm depth from the same patient's skin is smaller than near the skin surface. However in 10 melanoma samples from different patients, the S parameters vary significantly. Similarly, among 10 normal skin samples without cancer, the S parameters also vary largely among different patients. To understand the sensitivity of PAS as a tool to detect cancer formation at the early stage, we propose a controlled and systematic study of in vivo experiments using UV-induced cancer skin from living animals.  相似文献   
9.
Effective work functions (φ+ and φe) for positive-ionic and electronic emissions from polycrystalline metals of Nb, Mo, Ta, W and Ir are calculated according to our theoretical model by using those published data on both fractional surface area (Fi) and local work function (φi) of each metal surface composed of several patchy faces (1, 2, …, i). Comparison between the theoretical values thus obtained and those experimental data published to date yields the conclusions as follows. (1) With a slight error of less than ∼0.1 eV, the value of φe calculated with each of the metals is in fair or good agreement with that determined by experiment. (2) Such agreement is found also with φ+ for W. (3) In a typical case of W, where the degree of monocrystallization (δm) corresponding to the largest among the values of Fi is less than ∼0.5, the thermionic contrast (Δφ* ≡ φ+ − φe) is found again to be nearly equal to both theoretical and experimental values reported previously. (4) Each of the five metals shows that Δφ* at δm = 0.68-0.95 is smaller than Δφ* at δm < 0.5. (5) This result strongly supports our theoretical prediction that Δφ* decreases gradually to zero as δm increases beyond ∼0.5 up to ∼1. (6) Particularly, such a surface which has δm ≥ 0.96 exhibits Δφ* ≈ 0, apparently equivalent to the so-called “monocrystalline surface (δm = 1)”. These results lead to the conclusion that our theoretical model is valid for evaluating the effective work functions probably with a slight error of less than ∼0.1 eV, irrespective of both the surface species and the range of δm. In addition, our simple model makes it possible to analyze the mechanism of change in φ+ and φe according to the change in surface characters of both φi and Fi.  相似文献   
10.
A single band t-U-J1-J2 model is proposed as the minimum model to describe the superconductivity of the newly discovered iron-based superconductorsR(O1-xFx)FeAs and RO1-xFeAs (R=La, Ce, Sm, Pr, Nd, Gd). With the mean-field approach, it is found that the pairing occurs in the d-wave channel. In the likely parameter region of the real materials, by lowering temperature, the system enters firstly the dxy superconducting phase with D4h-symmetryand then enters the time-reversal-symmetry-broken dxy+idx2-y2 superconducting phase with C4h-symmetry.  相似文献   
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