InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.     

Self‐Assembled Submonolayer of β‐Cyclodextrins on Gold Electrode for the Selective Determination of 4‐Aminobiphenyl

The formation of an inclusion complex between 4‐aminobiphenyl (4‐AB) and β‐cyclodextrin molecules (β‐CD), allows the use of thiolated β‐CDs as chemi‐adsorbed material on a Au electrode as a self‐assembled submonolayer for the selective square wave voltammetric determination of 4‐AB. The submonolayer was characterized by reductive desorption and an association constant of 1.2×10⁴ L/mol was obtained. The optimization of variables yielded a linear dependence of ip/4‐AB concentration in the range of 10^?5 to 10^?4 mol/L. The selectivity of the method was evaluated in the presence of other aromatic amines obtaining better results with the modified electrode. This methodology was applied to the voltammetric determination of 4‐AB in wastewater samples.     

Platinum submonolayer-monolayer electrocatalysis: An electrochemical and X-ray absorption spectroscopy study

A new Pt monolayer electrocatalyst concept is described and the results of electrochemical and X-ray absorption spectroscopy (XAS) studies are presented. Two new methods that facilitate the application of this concept in obtaining ultra-low-Pt-content electrocatalysts have been developed. One is the electroless (spontaneous) deposition of a Pt submonolayer on Ru nanoparticles, and the other is a deposition of a Pt monolayer on Pd nanoparticles by redox displacement of a Cu adlayer. The Pt submonolayer on Ru (PtRu₂₀) electrocatalyst demonstrated higher CO tolerance than commercial catalysts under conditions of rotating disk experiments. The long-term stability test showed no loss in performance over 870 h using a fuel cell operating under real conditions, even though the Pt loading was approximately 10% of that of the standard Pt loading. In situ XAS indicated an increase in d-band vacancy of deposited Pt, which may facilitate partly the reduced susceptibility to CO poisoning for this catalyst. The kinetics of O₂ reduction on a Pt monolayer on Pd nanoparticles showed a small enhancement in comparison with that from a Pt nanoparticle electrocatalyst. The increase in catalytic activity is partly attributed to decreased formation of PtOH, as shown by XAS experiments.     

InAs单层和亚单层结构中的自旋动力学研究

利用偏振时间分辨光谱和时间分辨Kerr旋转谱，研究了GaAs中的InAs单层和亚单层的电子自旋动力学.实验发现，在非共振激发条件下，厚度为1/3单层的InAs亚单层中电子自旋弛豫寿命长达3.4ns，而1个单层厚的InAs层的电子自旋寿命只有0.48ns；而在共振激发条件下，亚单层结构中的电子自旋寿命大大减少，只有70ps，单层InAs中电子自旋寿命没有显著变化.分析表明，低温下InAs单层和亚单层结构中，Bir-Aronov-Pikus(BAP)自旋弛豫机理占主导地位.通过改变材料结构特性和激发条件来改变电子空穴的空间相关性，从而达到控制自旋弛豫的目的. 关键词： InAs亚单层 自旋弛豫 BAP机理     

In situ Second-Harmonic Generation Circular Dichroism with Submonolayer Sensitivity

In this work, we present an experimental setup for the in situ and ex situ study of the optical activity of samples, which can be prepared under ultra-high vacuum (UHV) conditions by second-harmonic generation circular dichroism (SHG-CD) over a broad spectral range. The use of a racemic mixture as a qualified reference for the anisotropy factor is described and, as an example, the chiroptical properties of 1.5 μm thick (multilayers) as well as sub-monolayer thin films of the R- and S-enantiomer of 1,1′-Bi-2-naphthol (BINOL) evaporated onto BK7 substrates were investigated.     

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.