富晶格位错的多孔铋纳米花高效电还原二氧化碳制甲酸盐※

二氧化碳转化已成为现今世界研究的热点. 本工作采用原位电化学转化的策略, 将简单溶剂热法合成的层状甲酸氧铋纳米花(BiOCOOH NFs)还原为带有大量晶格位错的多孔铋纳米花(p-Bi NFs). 研究结果表明, p-Bi NFs电催化二氧化碳转化为甲酸盐具有较小的过电位(436 mV). 在–1.8 V(相对饱和甘汞电极, vs. SCE)时, 甲酸盐的分电流密度(j_formate)高达24.4 mA•cm^-2, 法拉第效率(FE_formate)为96.7%, 且在超过500 mV的宽电位窗口内FE_formate超过90%, 并具有很好的稳定性. 该催化剂的高催化性能可归因于前驱体晶格坍塌和重构而形成特殊的多孔粗糙的微纳多级结构, 其表面富含晶格位错和缺陷等高本征活性位, 且具有较强的电子传递能力. 本研究为设计合成高性能的电催化二氧化碳还原产甲酸催化剂提供了新的思路.     

基于电化学发光和阻抗技术研究DNA单碱基错配

单碱基错配的识别和稳定性差异在核酸多态性研究中至关重要。在同一电化学传感器平台上，采用电化学发光（ECL）和电化学阻抗（EIS）2种技术，协同研究DNA链中不同类型和不同位点的单碱基错配识别和稳定性差异。电极表面具有茎环构象的探针DNA与完全互补DNA、不同类型或不同位点单碱基错配DNA杂交前后的ECL和EIS信号强度变化有显著差异。信号强度变化可揭示单碱基错配识别的稳定性。结果表明，DNA链中心位点的C-A单碱基错配稳定性低于链两端的，靠近键合电极表面双链链端的C-A单碱基错配稳定性低于非键合电极表面双链链端的，同一中心位点C-X碱基对的稳定性顺序为C-G?C-T>C-A≥C-C。研究结果可为核酸多态性研究提供参考。     

高熵合金辐照硬化与力学性能研究

高熵合金由于多主元元素混合引起高熵结构效应，使其具有优异的物理、力学和化学特性，如高强度、高耐磨性、耐蚀性、热稳定性、优异的抗辐照性能等。然而，辐照诱发高熵合金材料的硬化行为和力学性能预测仍缺少相关研究，严重地限制了对其长期服役后材料性能的评估。基于晶体塑性理论结合实验结果，研究了空洞形状依赖的硬化行为、位错环诱发的硬化行为以及氧化物弥散增强的高熵合金力学性能。研究发现，考虑多面体空洞与位错的概率依赖的空间交互作用，能够更加准确地预测辐照金属的屈服应力；晶格畸变对屈服强度，有着重要的贡献；氧化物弥散相对位错运动起强烈钉扎的作用，从而对强度产生影响，直接决定抗辐照性能。高熵合金作为一种具有综合优异力学性能的新型结构材料，在先进核能系统中有望被广泛应用，比如核反应堆的核燃料包壳管。     

晶格畸变检测仪研究碳化硅晶片中位错缺陷分布

利用晶格畸变检测仪研究了SiC晶片位错分布情况,通过对熔融KOH腐蚀后的SiC晶片进行全片或局部扫描,从而得到完整SiC晶片或局部区域的位错分布。与LEXT OLS4000 3D激光共聚焦显微镜扫描腐蚀图进行比较,晶格畸变检测仪扫描腐蚀图可以将晶片上位错腐蚀坑信息完全呈现出来,且根据腐蚀坑呈现的颜色及尺寸大小,可以分辨出三种不同类型的穿透型位错,其中黑点腐蚀坑对应螺位错,小尺寸白点腐蚀坑对应刃位错,大尺寸白点腐蚀坑对应混合型位错。采用晶格畸变测试仪研究了4英寸(101.6 mm)N型4H-SiC晶体不同生长时期的位错密度及分布情况,结果表明随着晶体生长,位错密度呈现逐渐降低的趋势,生长后期晶片的总位错密度降为生长前期晶片总位错密度的近1/3,有利于反馈位错缺陷在SiC晶体生长过程中的延伸和转化特性信息,以指导SiC晶体生长工艺改进。     

6英寸低位错锗单晶生长热场设计

锗片作为衬底材料已在空间太阳电池领域得到广泛的应用,新型锗基空间太阳能电池对锗片的需求由4英寸(1英寸=2.54 cm)提高到6英寸后,低位错锗单晶的生长难度增大。本文设计开发了一种适用于直拉法生长大尺寸、低位错锗单晶的双加热器热场系统,模拟研究了不同形状主加热器的热场分布,从而得到最优的热场环境。研究发现:渐变长度为L/h=1/2、渐变率α为65°的渐变型主加热器热场结构能够获得最佳的热场分布,有利于低位错单晶的生长。经验证,生长的锗单晶热应力较低,位错密度在310～450 cm^-2范围内。     

Interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric material

The interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric medium is investigated. Closed-form solutions of the elastic and electrical fields induced by the screw dislocation are derived using the conformal mapping method in conjunction with the image principle. Based on the electroelastic fields derived, the stress and electric displacement intensity factors, the image force acting on the dislocation are given explicitly. We find that the stress and electric displacement intensity factors depend on the effective electroelastic material constants. In the case where one of two phases is purely elastic, the stress intensity factor and image force are plotted to illustrate the influences of electromechanical coupling effect, the position of the dislocation and the material properties on the interaction mechanism. The project supported by the Doctoral Foundation of Hebei Province (B2003113)     

The indenter tip radius effect in micro- and nanoindentation hardness experiments.

Nix and Gao established an important relation between the microindentation hardness and indentation depth. Such a relation has been verified by many microindentation experiments (indentation depths in the micrometer range), but it does not always hold in nanoindentation experiments (indentation depths approaching the nanometer range). Indenter tip radius effect has been proposed by Qu et al. and others as possibly the main factor that causes the deviation from Nix and Gao's relationship. We have developed an indentation model for micro- and nanoindentation, which accounts for two indenter shapes, a sharp, conical indenter and a conical indenter with a spherical tip. The analysis is based on the conventional theory of mechanism-based strain gradient plasticity established from the Taylor dislocation model to account for the effect of geometrically necessary dislocations. The comparison between numerical result and Feng and Nix's experimental data shows that the indenter tip radius effect indeed causes the deviation from Nix-Gao relation, but it seems not be the main factor. The project supported by the National Natural Science Foundation of China (10121202) and the Ministry of Education of China (20020003023)     

分形最新进展与力学中的分形

分形在力学领域中的应用已很普遍,从微结构的位错分布、局部剪切场到地壳的运动和变形都已观察到分形的行为和分形结构.本文概述了分形理论的最新进展及在力学中的应用.给出了微结构、混沌与分形的关联及塑性、局部剪切的分形模型.进而讨论了损伤断裂的分形描述以及分形熵与热力学.     

EFFECTS OF DISLOCATION CONFIGURATION, CRACK BLUNTING AND FREE SURFACES ON THE TRIGGERING LOAD OF DISLOCATION SOURCES

The effects of dislocation configuration,crack blunting and free surfaces on the triggering load of dislocation sources in the vicinity of a crack or a wedge tip subjected to a tensile load in the far field are investigated.An appropriate triggering criterion for dislocation sources is proposed by considering the configurational forces acting on each dislocation.The triggering behaviors of dislocation sources near the tips of a crack and a wedge are compared.It is also found that the blunting of crack tip and the presence of free surfaces near the crack or the wedge have considerable influences on the triggering load of dislocation sources.This study might be of significance to gaining a deeper understanding of the brittle-to-ductile transition of materials.     

Interaction between a screw dislocation and an elastic elliptical inhomogeneity with interfacial cracks

The elastic interaction between a screw dislocation and an elliptical inhomogeneity with interfacial cracks is studied. The screw dislocation may be located outside or inside the inhomogeneity. An efficient complex variable method for the complex multiply connected region is developed, and the general solutions to the problem are derived. As illustrative examples, solutions in explicit series form for complex potentials are presented in the case of one or two interfacial cracks. Image forces on the dislocation are calculated by using the Peach-Koehler formula. The influence of crack geometries and material properties on the image forces is evaluated and discussed. It is shown that the interfacial crack has a significant effect on the equilibrium position of the dislocation near an elliptical-arc interface. The main results indicate, when the length of the crack goes up to a critical value, the presence of the interfacial crack can change the interaction mechanism between a screw dislocation and an elliptical inclusion. The present solutions can include a number of previously known results as special cases.The project supported by the National Natural Science Foundation of China(10272009 and 10472030) and the Natural Science Foundation of Hunan Province(02JJY2014)