覆盖曲面的不等式及其应用

本文运用改良Ａｈｌｆｏｒｓ的覆盖曲面定理，首先精确了Ｔｓｕｊｉ的二个不等式．然后用几何方法导出了一个相当广泛的正规定理．它以著名的Ａ．Ｂｌｏｃｈ正规定理及Ｐ．Ｍｏｎｔｅｌ正规定理为特例．     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

Incoherently Coupled Grey Photovoltaic Spatial Soliton Families

A theory is developed for incoherently coupled grey photovoltaic soliton families in unbiased photovoltaic crystals. Both the properties and the forming conditions of these soliton families are discussed in detail. The theory can also be used to investigate the dark photovoltaic soliton families. Some relevant examples are presented, in which the photovoltaic-photorefractive crystal is of lithium niobate type.     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.     

关于p-叶星形性和强星形性的充分条件 (英)

本文利用微分从属的方法得到了单位圆盘内p-叶星形函数和强星形函数的某些充分条件．     

D—AKNS族的换位表示

本文根据曹策问教授的想法,求得了与D-AKNS族发展方程相联系的特征值之泛函梯度与Lenard算子对;并由此得到了D-AKNS族非线性发展方程的换位表示。文末还讨论了换位表示与定态D-AKNS方程之间的关系.     

An Implicit Iteration Process with Errors for a Finite Family of r-strictly Asymptotically Pseudocontractive Mappings

In this paper,we will establish several strong convergence theorems for the approximation ofcommon fixed points of r-strictly asymptotically pseudocontractive mappings in uniformly convex Banachspaces using the modiied implicit iteration sequence with errors,and prove the necessary and sufficient conditionsfor the convergence of the sequence.Our results generalize,extend and improve the recent work,in thistopic.     

宽带Ⅱ-Ⅵ族半导体及其低维结构的生长和光学性质研究进展

本文系自1979年以来，宽带Ⅱ-Ⅵ族半导体研究组取得的主要研究成果的简要介绍。取得的主要研究成果可分为如下六个方面：第一，系统地研究了宽带Ⅱ-Ⅵ族半导体在电场激发下的自由激子发射；第二，创造性地提出并实 利用宽带Ⅱ-Ⅵ族超晶格的室温激子效应来实现在蓝绿区快响应的光学双稳的物理思想；第三，深入研究了宽带Ⅱ-Ⅵ族超晶格中的激子行为以及激子与元激发态的相互作用，为利用激子获得有效蓝色自发和受激发射提供物理基础和实验途径；第四，研究了ZnSe基非对称双量子阱和组合超晶格中激子的隧穿以及激子的自发和受激发射；第五，CdSe和ZnSeS自组装量子点的生长及其形成机理；第六，ZnO薄膜的生长及其紫外发射特性。     

─族亚纯函数的正规定则

本文讨论亚纯函数族的正规性，推广并改进了杨乐￣［２，３］，陈怀惠￣［５］和朱秀蓉，龚向宏￣［７］等人的结果。     

全纯函数族的正规定则

Let f be a holomorphic function on a domain D Lontaiu in C, and let a be a finite complex number. We denote by -↑Ef/(a) = {z ∈ D : f(z) = a, ignoring multiplicity} the set of all distinct α-points of f. Let F be a family of holomorphic functions on D. If there exist three finite values a, b(≠ O,α) and c(≠ O) such that for every f ∈F, -↑Ef′/(0) Lontain in -↑Ef(α） and -↑Ef′ (b) Lontain in -↑Ef(c), then F is a normal family on D.