Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

恒流应力下E2PROM隧道氧化层的退化特性研究

在电容测量的基础上研究了薄隧道氧化层在恒定Fowler-Nordheim(F-N)隧穿电流下的退化情况. 这种退化是恒流应力和时间的函数，对恒流应力大小的依赖性更加强烈，隧道氧化层在F-N电流下的退化是注入电荷密度(Q_inj)的函数. 在较低Q_inj下氧化层中发生正电荷俘获，在较高Q_inj下发生负电荷俘获，导致栅压变化的反复. 关键词： 2PROM')" href="#">E²PROM 隧道氧化层 退化 恒流应力     

Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.     

古罗马用铅造输水道

罗马共和国和罗马帝国时代是全球铅生产的第一个高峰期,此时,古罗马对铅的应用也达到了顶峰。罗马文化直接继承了古希腊文化和伊特鲁里亚文化,其建筑成就达到了欧洲奴隶制时代建筑的最高峰。工程奇迹之一是输水道工程,这是古罗马为供应城市生活用水而建造的送水渡槽。公元前3 1 2年建造了一条长1 6公里的地下输水道,公元前2世纪时又开始架设地上引水道,第一条地上引水道全长达86 6公里。至公元2 2 6年,罗马先后修建了1 1条大型输水道,有些水道高达49米,这些输水道都修建得十分豪华,有些输水道由铅管或陶器和隧道组成。据报道,仅建造里昂的一…     

Spin-Polarized Tunnelling Magnetoresistance Effects in La0.833K0.167MnO3／SrTiO3 Polycrystalline Perovskite Manganites

A sample of La0.833K0.167MnO3-SrTiO3 (LKMO/STO) is fabricated by the sol-gel method. The microstructure,magnetic and transportation properties have been studied. X-ray diffraction patterns indicate that the structure of LKMO/STO is a homogeneous solid solution phase. The resistivity of LKMO/STO shows the insulator behaviour, which is different from La0.833K0.167MnO3 (LKMO) whose resistivity shows metal-insulator transition with decreasing temperature. The low-field (moH = 0.02 T) magnetoresistance decreases from 11% to 0.2% with the increasing temperature from 4 K‘to 220K for the LKMO/STO sample. The magnitude of magnetoresistance in a strong field (μoH = 5.5 T) almost increases linearly with decreasing temperature and reaches the maximum of 65% at the low temperature of 4.2K, which is much higher than that oE LKMO (40%). The enhanced low-field magnetoresistance effects are quantitatively explained by the spin-polarized tunnelling at grain boundaries.     

具有室温巨隧道磁电阻效应与高自旋极化率的新材料

回顾了隧道磁电阻效应发展简史及其应用,报道了锌铁氧体/氧化铁二相纳米复合材料在室温具有巨磁隧道电阻效应的实验结果,该实验结果表明锌铁氧体是具有高自旋极化率的一类新材料,值得进一步开展相关的研究工作.     

Teleportation of an Arbitrary Multipartite GHZ-Class State by One EPR Pair

We present a scheme for perfectly teleporting an arbitrary and unknown N-particle GHZ-class state from a sender to a receiver. We just need one quantum channel composed of two or three particles in the maximally entangled state. The sender performs one Bell-state measurement on two of her particles and N - 1 Hadamard operations and N - 1 yon Neumann measurements on the rest N - 1 particles. The receiver adopts one corresponding unitary transformation on his particles shared with the sender. After that, the receiver can obtain the original N-particle GHZ-class state by introducing N - 1 ancillary particles and carrying out N - 1 controlled-NOT operations. We also generalize the scheme to the case of controlled teleportation.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底