Experimental and theoretical assessment of Fe-doped indium-oxide-based dilute magnetic semiconductors

Specimens of iron-doped indium oxide (In_1-xFe_x)₂O₃ with x?=?0.015, 0.03, 0.045 and 0.06, amalgamated through a traditional solid-state reaction method followed by H₂/air sintering, were characterised using an X-ray diffractometer (XRD), a vibrating sample magnetometer (VSM), and a scanning electron microscope (SEM) to investigate their structural, magnetic and morphological properties respectively. According to XRD plots, all the specimens exhibit cubic bixbyite structures along with ancillary phases. Magnetic assessment showed that In₂O₃ has a negative susceptibility, exhibiting diamagnetic behaviour at room temperature. The doping of Fe ions induces ferromagnetic (FM) ordering, which is enhanced with increasing doping content. The strength of the magnetisation increases when the specimens are exposed to H₂ but is reduced on further air sintering. A bound magnetic polaron (BMP) model is successfully fitted to the observed FM data involving localised carriers and magnetic cations. A multivariate assessment viz. a hierarchical cluster analysis (HCA) was used to corroborate and strengthen the experimental determined magnetic properties. A homogeneous particle distribution was observed in all SEM micrographs and is validated through MATLAB-based simulation by applying a watershed segmentation algorithm. Surface plots also confirm the change in magnetic properties with increase in doping concentration.     

Microstructure evolution of room-temperature-sputtered ITO films suitable for silicon heterojunction solar cells

Thickness influence on structural, optical and electrical properties of sputtered indium tin oxide (ITO) with thickness ranging from 60 up to 430 nm films has been studied. At the increase of the film thickness crystallinity degree and grain size increased, whereas tensile structural distortion as well as resistivity decreased. It was observed that a microstructure evolution takes place: the initial amorphous layer evolved in polycrystalline phase, with a grain–subgrain surface morphology. Carrier concentration increased at the increase of the film thickness and a general relationship between electrical characteristics and structural distortion has been found. In thinner films larger tensile distortion allowed to include larger amount of interstitial O and/or Sn atoms in the lattice. An appreciable impact of the thickness was also observed on electro-optical properties in terms of changes in energy gap, resistivity and optical absorption. Silicon heterojunction solar cells have been produced and J_sc as high as 33.0 mA/cm² has been obtained.     

Indium-mediated allenylation of arylacyl bromides in a route for the synthesis of substituted furans

A three-step, single purification procedure has been developed for the concise synthesis of substituted furans from arylacyl bromides.     

Turn-on Circularly Polarized Luminescence in Chiral Indium Chlorides by 5s2 Metal Centers

Introducing chirality into the metal-halide hybrids has enabled many emerging properties including chiroptical activity, spin-dependent transport, and ferroelectricity. However, most of the chiral metal-halide hybrids to date are non-emissive, and the underlying mechanism remains elusive. Here, we show a new strategy to turn on the circularly polarized luminescence (CPL) in chiral metal-halide hybrids. We demonstrate that alloying Sb³⁺ into chiral indium-chloride hybrids dramatically increases the photoluminescence quantum yield in two new series of chiral indium-antimony chlorides. These materials exhibit strong CPL signals with tunable energy and a high dissymmetry factor up to 1.5×10⁻². Mechanistic studies reveal that the emission originates from the self-trapped excitons centered in 5s² Sb³⁺. Moreover, near-ultraviolet pumped white light is demonstrated with a polarization up to 6.0 %. Our work demonstrates new strategies towards highly luminescent chiral metal-halide hybrids.     

Intramolecular Aza‐Diels‐Alder Cyclization of a Dimerized Citral with Anilines Catalyzed by InCl3

A series of aza‐polycyles containing octahydroacridine core were prepared via an intramolecular aza‐Diels‐Alder reaction of a dimerized citral with various aromatic amines. This reaction is efficiently catalyzed by InCl₃ at ambient temperature to afford the corresponding cyclized products in moderate to good yields.     

Syntheses,Crystal Structures,and Properties of the Isotypic Pair [Cr(H2O)6]2[B12H12]3·15H2O and [In(H2O)6]2[B12H12]3·15H2O

Single crystals of [Cr(H₂O)₆]₂[B₁₂H₁₂]₃ · 15H₂O and [In(H₂O)₆]₂[B₁₂H₁₂]₃ · 15H₂O were obtained by reactions of aqueous solutions of the acid (H₃O)₂[B₁₂H₁₂] with chromium(III) hydroxide and indium metal shot, respectively. The title compounds crystallize isotypically in the trigonal system with space group R$\bar{3}$ c (a = 1157.62(3), c = 6730.48(9) pm for the chromium, a = 1171.71(3), c = 6740.04(9) pm for the indium compound, Z = 6). The arrangement of the quasi‐icosahedral [B₁₂H₁₂]^2– dianions can be considered as stacking of two times nine layers with the sequence …ABCCABBCA… and the metal trications arrange in a cubic closest packed …abc… stacking sequence. The metal trications are octahedrally coordinated by six water molecules of hydration, while another fifteen H₂O molecules fill up the structures as zeolitic crystal water or second‐sphere hydrating species. Between these free and the metal‐bonded water molecules, bridging hydrogen bonds are found. Furthermore, there is also evidence of hydrogen bonding between the anionic [B₁₂H₁₂]^2– clusters and the free zeolitic water molecules according to B–H^δ– ··· ^δ+H–O interactions. Vibrational spectroscopy studies prove the presence of these hydrogen bonds and also show slight distortions of the dodecahydro‐closo‐dodecaborate anions from their ideal icosahedral symmetry (I_h). Thermal decomposition studies for the example of [Cr(H₂O)₆]₂[B₁₂H₁₂]₃ · 15H₂O gave no hints for just a simple multi‐stepwise dehydration process.     

Variations of the elastic constants of InSb near the covalent-metallic transition

Abstract

The pulse-echo-overlap method was used to measure the longitudinal and transverse wave velocities in single-crystal (100) and (111) samples of InSb up to 3 GPa at room temperature. The peculiar variations of the elastic constants were observed near the covalent-metallic transition.     

Mild and Efficient Deoxygenation of Amine-N-oxides with Titanium Tetrachloride-Indium System

Abstract

TiCl₄/In system was found to be a new reagent for deoxygenation of various amine-N-oxides to the corresponding amines in good to excellent yields under mild conditions.     

Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Electromigration of In in amorphous indium-gallium-zinc-oxide thin film transistors under repeated switching operation was investigated by analyzing the distribution of component elements. During the repeated switching operations up to 300 times, threshold voltage of this device increased gradually implying alteration to the internal device structures. Energy dispersive X-ray spectroscopy revealed noticeable redistribution of metallic components, especially In, in the channel layer beneath the source electrode during switching operations by the migration of metallic ions away from the source electrode, which is attributed to electromigrations similar to those observed in organic light emitting diodes having indium tin oxide electrodes.