Indium (III) Tribromide : An Excellent Catalyst for Biginelli Reaction

A highly efficient catalyst indium (III) tribromide is used to synthesize 5-alkoxy- carbonyl-4-hydrocarbyl-3,4-dihydropyrimidin-2(1H)-ones by a three-component coupling of β-keto ester, aldehydes and urea through improved Biginelli reaction.     

Remarkably mild and efficient catalytic Sakurai reaction of N-alkoxycarbonylamino sulfones with allyltrimethylsilane using indium(III) chloride

The Sakurai reaction of N-alkoxycarbonylamino sulfones with allyltrimethylsilane in the presence of a catalytic amount of indium(III) chloride at room temperature produces the corresponding protected homoallylic amines in high yields.     

铟(Ⅲ)-芦丁极谱络合吸附波的研究

在pH6.0的乙酸盐缓冲底液中,用单扫极谱法可获得高灵敏度的铟(Ⅲ)-芦丁的络合吸附波,其检测下限达3.0×10~(-10)mol/L。成功地用于纯金属锌中10~(-5)％铟的测定。测得吸附电活性络合物的组成为:In(Ⅲ):芦丁=1∶2,条件稳定常数为1.8×10~(10)。电极反应是吸附络合物中的In(Ⅲ)还原为In(Hg)。测得电极反应的转移系数α=0.51,表面电化学反应的标准速率常数k_s=0.43/s     

径向基函数神经网络荧光光度法同时测定痕量铝、镓、铟、铊

以径向基网络(RBF)对荧光光谱严重重叠的Al3 、Ga3 I、n3 、Tl3 四组分混合体系同时进行测定。通过正交设计安排样本,在激发波长390 nm下,测定446~615nm的发射光谱。以34个特征波长处的荧光强度值作为网络特征参数,经网络训练和计算得出Al3 、Ga3 、In3 、Tl3 四者的平均回收率分别为99.07%、103.49%、98.72%、95.04%,在时间和精度上都比LMBP网络优越。     

Arene Complexes of Univalent Gallium,Indium, and Thallium

Arene complexes of main-group metals were, until recently, rare species—in contrast to the now classical, analogous complexes of transition metals. In systematic investigations, it has been possible to prepare and structurally characterize arene complexes of the univalent elements gallium, indium, and thallium, which directly follow the d-block elements in the periodic table. This new type of compound is characterized by centric (η⁶) coordination of the metal to the arene; both mono- and bis(arene) complexes are known. The interaction can be explained by the perfect agreement between the HOMO/LUMO symmetry of the arene and of the low-valent metal. The electronic states of the nd¹⁰(n + 1)s² configuration, which are partially modified by relativistic effects, play a particularly important role. The relationship to the few known complexes of the neighboring elements (Sn^II, Pb^II) becomes plausible via the isoelectronic principle. The arene/Ga^I, In^I, Tl^I systems are of potential significance as homogeneous reducing agents and as agents for the activation of aromatic compounds, the purification of metals, and the separation of metals from nonaqueous media.     

铟（Ⅲ）的碱金属卤化物与冠醚配合物的合成及表征

在萃取研究过程中,合成了10种由四溴(或碘)合铟(Ⅲ)配阴离子与苯并-15-冠-5或二苯并-18-冠-6合钾(或钠)配阳离子相结合所形成的新型固体配合物。经元素分析、红外光谱及差热-热重等方法对配合物进行了表征。通过与相应的冠醚碱金属苦味酸盐配合物结构性质的对比,较合理地解释了这两类萃取体系之间存在的某些差别。     

1,2‐Dithioquadratato‐ und 1,2‐Dithiooxalatoindate(III)

Indium(III) chloride forms in water with potassium 1,2‐dithiooxalate (dto) and potassium 1,2‐dithiosquarate (dtsq) stable coordination compounds. Due to the higher bridging ability of the 1,2‐dithiooxalate ligand in all cases only thiooxalate bridged binuclear complexes were found. From 1,2‐dithioquadratate with an identical donor atom set mononuclear trischelates could be isolated. Five crystalline complexes, (BzlMe₃N)₄[(dto)₂In(dto)In(dto)₂] ( 1 ), (BzlPh₃P)₄[(dto)₂In(dto)In(dto)₂] ( 2 ), (BzlMe₃N)₃[In(dtsq)₃] ( 3 ), (Bu₄N)₃[In(dtsq)₃] ( 4 ) and (Ph₄P)[In(dtsq)₂(DMF)₂] ( 5 ), have been isolated and characterized by X‐ray analyses. Due to the type of the complex and the cations involved these compounds crystallize in different space groups with the following parameters: 1 , monoclinic in P2₁/c with a = 14.4035(5) Å, b = 10.8141(5) Å, c = 23.3698(9) Å, β = 124.664(2)°, and Z = 2; 2 , triclinic in P with a = 11.3872(7) Å, b = 13.6669(9) Å, c = 17.4296(10) Å, α = 88.883(5)°, β = 96.763(1)°, γ = 74.587(5)°, and Z = 1; 3 , hexagonal in R3 with a = 20.6501(16) Å, b = 20.6501(16) Å, c = 19.0706(13) Å and Z = 6; 4 , monoclinic in P2₁/c with a = 22.7650(15) Å, b = 20.4656(10) Å, c = 14.4770(9) Å, β = 101.095(5)°, and Z = 4; 5 , triclinic in P with a = 9.2227(6) Å, b = 15.3876(9) Å, c = 15.5298(9) Å, α = 110.526(1)°, β = 100.138(1)°, γ = 101.003(1)°, and Z = 2.     

The first indium-organic two-dimensional layer network with rhombus grids

The indium(III)-organic compound [In(HBtc)₂(4,4′-bpy)](4,4′-Hbpy)(H₂O)_0.5 (Btc=1,3,5-benzenetricarboxylate, 4,4′-bpy=4,4′-bipyridine) has been synthesized under hydrothermal condition and characterized by IR, fluorescent spectroscopy, TGA and single-crystal X-ray diffraction analyses. The compound crystallizes in monoclinic, space group P2(1)/c, a=17.0884(2) Å, b=12.28390(10) Å, c=17.9456(4) Å, β=104.1920(10)°, V=3652.03(10) Å³, Z=4, R₁=0.0572 and wR₂=0.1116 [I>2σ(I)]. All the indium atoms in the compound are hepta-coordinated and link 1,3,5-benzenetricarboxylate forming a 2-D layer structure with rhombus grids.     

Electrochemical Study of Indium in a Water‐Stable 1‐Ethyl‐3‐Methylimidazolium Chloride/Tetrafluoroborate Room Temperature Ionic Liquid

The electrochemistry of indium species was investigated at glassy carbon, tungsten and nickel electrodes in a basic 1‐ethyl‐3‐methylimidazolium chloride/tetrafluoroborate ionic liquid. Amperometric titration experiments suggest that In(III) chloride is complexed as [InCl₅]^2? in this ionic liquid. The electrochemical reduction of [InCl₅]^2? to indium metal is preceded by overpotential driven nucleations. The effective anodic dissolution of indium to indium(III) requires, however, the presence of sufficient chloride ions at the electrode surface. The electrodeposition of indium at glassy carbon and tungsten electrodes proceeds via three‐dimensional instantaneous nucleation with diffusion‐controlled growth of the nuclei. At the nickel electrode, the deposition proceeds via three‐dimensional progressive nucleation with diffusion‐controlled growth of the nuclei. Raising the deposition temperature decreases the average radius of the individual nuclei, r. Scanning electron microscopic and x‐ray diffraction data indicated that bulk crystalline indium electrodeposits could be prepared on nickel substrates within a temperature range between 30 and 120 °C.     

Spectrographic estimation of Ga, In and Tl in semiconductor grade selenium

Summary An emission spectrographic method for the estimation of Ga, In and Tl in semiconductor grade selenium at less than a ppm concentration has been developed. The impurities were separated from 1 g of selenium by volatilizing it from its solution in nitric acid and sulphuric acid. The residue containing the impurities was dissolved in small amounts of 6 M HCl and was loaded along with the washings on 10 mg mixture containing graphite (90%) and sodium chloride carrier (10%) in the electrode crater. The spectra were excited in a d.c. arc carrying 13 A current. The detection limits lie in the range of 0.0025–0.005 ppm. The precision of the method ranges from 7–12% for these elements. The recoveries of impurities from selenium were confirmed using radioactive tracers.

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Spektrographische Bestimmung von Gallium, Indium und Thallium in Halbleiterselen

Zusammenfassung Eine 1 g-Probe wird in Salpeter- und Schwefelsäure gelöst und die Verunreinigungen durch Verflüchtigung des Selens isoliert. Sie werden in 6 M HCl gelöst und zusammen mit einem Graphit/NaCl-Gemisch (91) in die Elektrode eingebracht. Zur Anregung dient ein Gleichstrombogen (13 A). Die Nachweisgrenzen liegen im Bereich von 0.0025–0.005 ppm, der Variationskoeffizient bei 7–12%. Die Wiedergewinnung der Verunreinigungen wurde mit Hilfe von Radioindicatoren geprüft.